WO2007047585A3 - Photonic structures for efficient light extraction and conversion in multi-color light emitting devices - Google Patents
Photonic structures for efficient light extraction and conversion in multi-color light emitting devices Download PDFInfo
- Publication number
- WO2007047585A3 WO2007047585A3 PCT/US2006/040384 US2006040384W WO2007047585A3 WO 2007047585 A3 WO2007047585 A3 WO 2007047585A3 US 2006040384 W US2006040384 W US 2006040384W WO 2007047585 A3 WO2007047585 A3 WO 2007047585A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- conversion
- emitting devices
- light extraction
- photonic structures
- Prior art date
Links
- 238000000605 extraction Methods 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 title 1
- 239000004038 photonic crystal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005284 excitation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008535773A JP2009512220A (en) | 2005-10-14 | 2006-10-13 | Photonic structure for efficient light extraction and conversion in multicolor light emitting devices |
DE112006002919T DE112006002919T5 (en) | 2005-10-14 | 2006-10-13 | Photonic structures for efficient light extraction and conversion in multicolor LEDs |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/251,365 US7768023B2 (en) | 2005-10-14 | 2005-10-14 | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
US11/251,365 | 2005-10-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007047585A2 WO2007047585A2 (en) | 2007-04-26 |
WO2007047585A3 true WO2007047585A3 (en) | 2007-09-13 |
Family
ID=37947351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2006/040384 WO2007047585A2 (en) | 2005-10-14 | 2006-10-13 | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
Country Status (5)
Country | Link |
---|---|
US (3) | US7768023B2 (en) |
JP (1) | JP2009512220A (en) |
KR (1) | KR20080063403A (en) |
DE (1) | DE112006002919T5 (en) |
WO (1) | WO2007047585A2 (en) |
Families Citing this family (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7768024B2 (en) * | 2005-12-02 | 2010-08-03 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth |
US7781789B2 (en) * | 2006-11-15 | 2010-08-24 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
US7345298B2 (en) * | 2005-02-28 | 2008-03-18 | The Regents Of The University Of California | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate |
WO2007056354A2 (en) * | 2005-11-04 | 2007-05-18 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (led) |
US8369659B2 (en) | 2006-03-22 | 2013-02-05 | The Invention Science Fund I Llc | High-Q resonators assembly |
US20070223866A1 (en) * | 2006-03-22 | 2007-09-27 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Controllable electromagnetically responsive assembly of self resonant bodies |
US7573074B2 (en) | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
US7737455B2 (en) * | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
JP4231880B2 (en) * | 2006-07-26 | 2009-03-04 | 株式会社東芝 | Three-dimensional structure, light emitting device having the same, and method for manufacturing the same |
EP2087563B1 (en) | 2006-11-15 | 2014-09-24 | The Regents of The University of California | Textured phosphor conversion layer light emitting diode |
US20090121250A1 (en) * | 2006-11-15 | 2009-05-14 | Denbaars Steven P | High light extraction efficiency light emitting diode (led) using glass packaging |
EP2095437A4 (en) * | 2006-11-15 | 2013-11-20 | Univ California | High light extraction efficiency sphere led |
TWI533351B (en) | 2006-12-11 | 2016-05-11 | 美國加利福尼亞大學董事會 | Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices |
JP2010512660A (en) * | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Nonpolar and semipolar light emitting devices |
WO2008073400A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Transparent light emitting diodes |
DE102007025092A1 (en) * | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | LED chip |
US8791631B2 (en) | 2007-07-19 | 2014-07-29 | Quarkstar Llc | Light emitting device |
JP2009049044A (en) * | 2007-08-13 | 2009-03-05 | Sumitomo Electric Ind Ltd | Method of manufacturing semiconductor laser |
JP5284036B2 (en) * | 2007-11-14 | 2013-09-11 | キヤノン株式会社 | Light emitting device |
US8536600B2 (en) * | 2007-12-18 | 2013-09-17 | Koninklijke Philips N.V. | Photonic crystal LED |
JP5214284B2 (en) * | 2008-03-10 | 2013-06-19 | 株式会社東芝 | Light extraction layer for light emitting device, and organic electroluminescence element using the same |
US7839062B2 (en) * | 2008-08-29 | 2010-11-23 | Bridgelux Inc. | Optical platform to enable efficient LED emission |
US7956282B2 (en) * | 2008-09-15 | 2011-06-07 | High Power Opto, Inc. | Photoelectric conversion element |
TWI470823B (en) | 2009-02-11 | 2015-01-21 | Epistar Corp | Light-emitting device and manufacturing method thereof |
GB0902569D0 (en) | 2009-02-16 | 2009-04-01 | Univ Southampton | An optical device |
US20100214282A1 (en) | 2009-02-24 | 2010-08-26 | Dolby Laboratories Licensing Corporation | Apparatus for providing light source modulation in dual modulator displays |
JP5118659B2 (en) * | 2009-02-24 | 2013-01-16 | パナソニック株式会社 | Light emitting element |
TW201044568A (en) | 2009-04-20 | 2010-12-16 | 3M Innovative Properties Co | Non-radiatively pumped wavelength converter |
WO2010123814A1 (en) * | 2009-04-20 | 2010-10-28 | 3M Innovative Properties Company | Non-radiatively pumped wavelength converter |
KR101068867B1 (en) * | 2009-05-28 | 2011-09-30 | 삼성엘이디 주식회사 | Light Emitting Diode Package |
JP2011066073A (en) * | 2009-09-15 | 2011-03-31 | Showa Denko Kk | Semiconductor light-emitting element |
US20110062472A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Wavelength-converted semiconductor light emitting device |
US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
TWI531088B (en) * | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | Light emitting diode chip having distributed bragg reflector |
CN102782818B (en) | 2010-01-27 | 2016-04-27 | 耶鲁大学 | For the selective etch based on conductivity and its application of GaN device |
KR101767284B1 (en) * | 2010-02-10 | 2017-08-23 | 테네코 오토모티브 오퍼레이팅 컴파니 인코포레이티드 | Pressure swirl flow injector with reduced flow variability and return flow |
KR100969100B1 (en) * | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the same and light emitting device package |
US9991427B2 (en) * | 2010-03-08 | 2018-06-05 | Cree, Inc. | Photonic crystal phosphor light conversion structures for light emitting devices |
WO2011110596A2 (en) * | 2010-03-09 | 2011-09-15 | European Nano Invest Ab | High efficiency nanostructured photvoltaic device manufacturing |
JP5331051B2 (en) * | 2010-04-21 | 2013-10-30 | パナソニック株式会社 | Light emitting element |
KR101047720B1 (en) | 2010-04-23 | 2011-07-08 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package using the light emitting device |
WO2011162479A2 (en) * | 2010-06-24 | 2011-12-29 | Seoul Opto Device Co., Ltd. | Light emitting diode |
KR20120001635A (en) * | 2010-06-29 | 2012-01-04 | 주식회사 나노브릭 | Surface display method and device |
EP2599133A2 (en) | 2010-07-28 | 2013-06-05 | Seoul Opto Device Co., Ltd. | Light emitting diode having distributed bragg reflector |
DE102010051287A1 (en) * | 2010-11-12 | 2012-05-16 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for its production |
DE102010051286A1 (en) * | 2010-11-12 | 2012-05-16 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for its production |
JP5693745B2 (en) | 2010-12-17 | 2015-04-01 | ドルビー ラボラトリーズ ライセンシング コーポレイション | Quantum dots for display panels |
WO2013078463A1 (en) | 2011-11-23 | 2013-05-30 | Quarkstar Llc | Light-emitting devices providing asymmetrical propagation of light |
EP2823515A4 (en) * | 2012-03-06 | 2015-08-19 | Soraa Inc | Light emitting diodes with low refractive index material layers to reduce light guiding effects |
WO2014004261A1 (en) | 2012-06-28 | 2014-01-03 | Yale University | Lateral electrochemical etching of iii-nitride materials for microfabrication |
WO2014138591A1 (en) | 2013-03-07 | 2014-09-12 | Quarkstar Llc | Illumination device with multi-color light-emitting elements |
CN110274162A (en) | 2012-09-13 | 2019-09-24 | 夸克星有限责任公司 | Luminaire with long-range dispersing element and total internal reflection extractor element |
EP2895793B1 (en) | 2012-09-13 | 2020-11-04 | Quarkstar LLC | Light-emitting devices with reflective elements |
KR102118309B1 (en) | 2012-09-19 | 2020-06-03 | 돌비 레버러토리즈 라이쎈싱 코오포레이션 | Quantum dot/remote phosphor display system improvements |
KR20140103455A (en) * | 2013-02-18 | 2014-08-27 | 삼성디스플레이 주식회사 | Display device using photonic crystal |
CN103137840A (en) * | 2013-02-27 | 2013-06-05 | 中国科学院半导体研究所 | Light emitting diode of white light and manufacturing method |
US9752757B2 (en) | 2013-03-07 | 2017-09-05 | Quarkstar Llc | Light-emitting device with light guide for two way illumination |
CN105009193B (en) | 2013-03-08 | 2019-01-11 | 杜比实验室特许公司 | Technology for the dual modulation displays converted with light |
WO2014144706A2 (en) * | 2013-03-15 | 2014-09-18 | Quarkstar Llc | Color tuning of light-emitting devices |
US9564550B2 (en) * | 2013-10-28 | 2017-02-07 | Infineon Technologies Dresden Gmbh | Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier |
KR102125450B1 (en) * | 2013-12-05 | 2020-06-22 | 엘지이노텍 주식회사 | Light conversion member and lighting device including the same |
WO2015148244A2 (en) | 2014-03-26 | 2015-10-01 | Dolby Laboratories Licensing Corporation | Global light compensation in a variety of displays |
US11095096B2 (en) | 2014-04-16 | 2021-08-17 | Yale University | Method for a GaN vertical microcavity surface emitting laser (VCSEL) |
KR102310805B1 (en) * | 2014-08-07 | 2021-10-08 | 엘지이노텍 주식회사 | Phosphor plate and lighting device including the same |
JP6236188B2 (en) | 2014-08-21 | 2017-11-22 | ドルビー ラボラトリーズ ライセンシング コーポレイション | Dual modulation technology with light conversion |
KR102425935B1 (en) | 2014-09-30 | 2022-07-27 | 예일 유니버시티 | A METHOD FOR GaN VERTICAL MICROCAVITY SURFACE EMITTING LASER (VCSEL) |
US11018231B2 (en) | 2014-12-01 | 2021-05-25 | Yale University | Method to make buried, highly conductive p-type III-nitride layers |
JP2016178234A (en) * | 2015-03-20 | 2016-10-06 | 株式会社東芝 | Semiconductor light-receiving device |
WO2016187421A1 (en) | 2015-05-19 | 2016-11-24 | Yale University | A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer |
DE102016101442A1 (en) | 2016-01-27 | 2017-07-27 | Osram Opto Semiconductors Gmbh | Conversion element and radiation-emitting semiconductor device with such a conversion element |
FR3068173B1 (en) * | 2017-06-27 | 2020-05-15 | Aledia | OPTOELECTRONIC DEVICE |
US10991856B2 (en) * | 2017-12-21 | 2021-04-27 | Lumileds Llc | LED with structured layers and nanophosphors |
US11042056B2 (en) | 2019-03-26 | 2021-06-22 | United States Of America As Represented By The Secretary Of The Air Force | Photonic crystal-enabled display stitching |
US11372134B2 (en) | 2019-06-04 | 2022-06-28 | United States Of America As Represented By The Secretary Of The Air Force | Peel-and-adhere photonic crystal |
US11353627B2 (en) | 2019-07-31 | 2022-06-07 | United States Of America As Represented By The Secretary Of The Air Force | Compact star tracker with photonic crystal pointing |
US20230155057A1 (en) * | 2020-04-08 | 2023-05-18 | Ams-Osram International Gmbh | Semiconductor Component and Process for Manufacturing a Semiconductor Component |
WO2021204654A1 (en) * | 2020-04-08 | 2021-10-14 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050205884A1 (en) * | 2004-03-19 | 2005-09-22 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices including in-plane light emitting layers |
US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
US20060202226A1 (en) * | 2005-02-28 | 2006-09-14 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5226053A (en) | 1991-12-27 | 1993-07-06 | At&T Bell Laboratories | Light emitting diode |
US5362977A (en) | 1992-12-28 | 1994-11-08 | At&T Bell Laboratories | Single mirror light-emitting diodes with enhanced intensity |
US5563811A (en) * | 1993-04-29 | 1996-10-08 | Humonics International Inc. | Microprocessor controlled drive circuit for a liquid nebulizer having a plurality of oscillators |
JPH07326820A (en) | 1994-05-30 | 1995-12-12 | Mitsubishi Electric Corp | Variable wavelength semiconductor laser device |
US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
US5771256A (en) | 1996-06-03 | 1998-06-23 | Bell Communications Research, Inc. | InP-based lasers with reduced blue shifts |
JPH11135838A (en) | 1997-10-20 | 1999-05-21 | Ind Technol Res Inst | White-color light-emitting diode and manufacture thereof |
JP3559453B2 (en) | 1998-06-29 | 2004-09-02 | 株式会社東芝 | Light emitting element |
US6504180B1 (en) | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
US6155699A (en) | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
DE19918370B4 (en) | 1999-04-22 | 2006-06-08 | Osram Opto Semiconductors Gmbh | LED white light source with lens |
US6504301B1 (en) | 1999-09-03 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Non-incandescent lightbulb package using light emitting diodes |
US6357889B1 (en) | 1999-12-01 | 2002-03-19 | General Electric Company | Color tunable light source |
US6657236B1 (en) | 1999-12-03 | 2003-12-02 | Cree Lighting Company | Enhanced light extraction in LEDs through the use of internal and external optical elements |
US6538371B1 (en) | 2000-03-27 | 2003-03-25 | The General Electric Company | White light illumination system with improved color output |
US6525464B1 (en) | 2000-09-08 | 2003-02-25 | Unity Opto Technology Co., Ltd. | Stacked light-mixing LED |
KR100377180B1 (en) * | 2001-05-03 | 2003-03-26 | 주식회사 하이닉스반도체 | Method for fabricating ferroelectric memory device |
JP2003069145A (en) | 2001-06-14 | 2003-03-07 | Furukawa Electric Co Ltd:The | Method of manufacturing distributed feedback semiconductor laser element group |
US6740906B2 (en) | 2001-07-23 | 2004-05-25 | Cree, Inc. | Light emitting diodes including modifications for submount bonding |
US6903379B2 (en) | 2001-11-16 | 2005-06-07 | Gelcore Llc | GaN based LED lighting extraction efficiency using digital diffractive phase grating |
JP3782357B2 (en) | 2002-01-18 | 2006-06-07 | 株式会社東芝 | Manufacturing method of semiconductor light emitting device |
JP4295536B2 (en) * | 2003-03-25 | 2009-07-15 | 株式会社リコー | Image forming apparatus |
US7083993B2 (en) * | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
KR20040092512A (en) | 2003-04-24 | 2004-11-04 | (주)그래픽테크노재팬 | A semiconductor light emitting device with reflectors having a cooling function |
US7683377B2 (en) * | 2003-07-16 | 2010-03-23 | Panasonic Corporation | Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same |
US7012279B2 (en) | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US20050156510A1 (en) | 2004-01-21 | 2005-07-21 | Chua Janet B.Y. | Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials |
JP4976857B2 (en) | 2004-02-20 | 2012-07-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Illumination system having a radiation source and a fluorescent material |
JP4020092B2 (en) * | 2004-03-16 | 2007-12-12 | 住友電気工業株式会社 | Semiconductor light emitting device |
US20050205883A1 (en) * | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
-
2005
- 2005-10-14 US US11/251,365 patent/US7768023B2/en not_active Expired - Fee Related
-
2006
- 2006-10-13 WO PCT/US2006/040384 patent/WO2007047585A2/en active Application Filing
- 2006-10-13 KR KR1020087011389A patent/KR20080063403A/en not_active Application Discontinuation
- 2006-10-13 JP JP2008535773A patent/JP2009512220A/en active Pending
- 2006-10-13 DE DE112006002919T patent/DE112006002919T5/en not_active Withdrawn
-
2010
- 2010-07-28 US US12/845,308 patent/US8227825B2/en not_active Expired - Fee Related
-
2011
- 2011-08-01 US US13/195,279 patent/US20110291130A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7098589B2 (en) * | 2003-04-15 | 2006-08-29 | Luminus Devices, Inc. | Light emitting devices with high light collimation |
US20050205884A1 (en) * | 2004-03-19 | 2005-09-22 | Lumileds Lighting U.S., Llc | Semiconductor light emitting devices including in-plane light emitting layers |
US20060202226A1 (en) * | 2005-02-28 | 2006-09-14 | The Regents Of The University Of California | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate |
Also Published As
Publication number | Publication date |
---|---|
US8227825B2 (en) | 2012-07-24 |
JP2009512220A (en) | 2009-03-19 |
DE112006002919T5 (en) | 2008-11-27 |
WO2007047585A2 (en) | 2007-04-26 |
KR20080063403A (en) | 2008-07-03 |
US7768023B2 (en) | 2010-08-03 |
US20070085100A1 (en) | 2007-04-19 |
US20110291130A1 (en) | 2011-12-01 |
US20100327305A1 (en) | 2010-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007047585A3 (en) | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices | |
TW200722903A (en) | A laser projection system based on a luminescent screen | |
WO2014014299A3 (en) | Semiconductor light-emitting element | |
TW200611967A (en) | Device and method for emitting output light using quantum dots and non-quantum fluorescent material | |
TW200623462A (en) | Monolithic multi-color, multi-quantum well semiconductor LED | |
WO2009020547A3 (en) | Semiconductor light emitting diodes with applied wavelength materials and methods of forming the same | |
WO2006093653A3 (en) | High efficiency light emitting diode (led) with optimized photonic crystal extractor | |
WO2007067758A3 (en) | High efficiency light emitting diode (led) | |
TW200703728A (en) | Light emitting device employing nanowire phosphors | |
WO2012015274A3 (en) | Organic electroluminescent device employing organic light emitting compound as light emitting material | |
WO2012015153A3 (en) | Light emitting diode having distributed bragg reflector | |
WO2006093937A3 (en) | Single or multi-color high efficiency light emitting diode (led) by growth over a patterned substrate | |
TW200733435A (en) | White light source | |
TW200703721A (en) | Light-emitting device with brightness enhancing layer | |
TW200603436A (en) | Photonic crystal light emitting device | |
WO2010022101A3 (en) | Organic light emitting diode lighting devices | |
TW200701520A (en) | Systems and methods for producing white-light emitting diodes | |
WO2004068598A3 (en) | Phosphor converted light emitting devices | |
WO2009102485A8 (en) | Broadband light emitting device lamps for providing white light output | |
WO2009041462A1 (en) | Nitride-group semiconductor light-emitting element, nitride-group semiconductor laser element, nitride-group semiconductor light emitting diode, their manufacturing method, and nitride-group semiconductor layer forming method | |
TW200705706A (en) | Light emitting diode structure | |
WO2008060601A3 (en) | High efficiency, white, single or multi-color light emitting diodes (leds) by index matching structures | |
WO2011099771A3 (en) | Light emitting diode chip having distributed bragg reflector and method of fabricating the same | |
TW200603677A (en) | Blue-based organic electro-luminescence element and display device | |
WO2008059278A3 (en) | Colour optoelectronic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
ENP | Entry into the national phase |
Ref document number: 2008535773 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020087011389 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120060029193 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06826030 Country of ref document: EP Kind code of ref document: A2 |
|
RET | De translation (de og part 6b) |
Ref document number: 112006002919 Country of ref document: DE Date of ref document: 20081127 Kind code of ref document: P |
|
WWE | Wipo information: entry into national phase |
Ref document number: DE |