WO2007050288A3 - Multiple device types including an inverted-t channel transistor and method therefor - Google Patents

Multiple device types including an inverted-t channel transistor and method therefor Download PDF

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Publication number
WO2007050288A3
WO2007050288A3 PCT/US2006/039651 US2006039651W WO2007050288A3 WO 2007050288 A3 WO2007050288 A3 WO 2007050288A3 US 2006039651 W US2006039651 W US 2006039651W WO 2007050288 A3 WO2007050288 A3 WO 2007050288A3
Authority
WO
WIPO (PCT)
Prior art keywords
inverted
active region
channel transistor
method therefor
types including
Prior art date
Application number
PCT/US2006/039651
Other languages
French (fr)
Other versions
WO2007050288A2 (en
Inventor
Byoung W Min
James D Burnett
Leo Mathew
Original Assignee
Freescale Semiconductor Inc
Byoung W Min
James D Burnett
Leo Mathew
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc, Byoung W Min, James D Burnett, Leo Mathew filed Critical Freescale Semiconductor Inc
Priority to JP2008537740A priority Critical patent/JP5283507B2/en
Priority to KR1020087009819A priority patent/KR101313473B1/en
Priority to EP06816683A priority patent/EP1943671A4/en
Publication of WO2007050288A2 publication Critical patent/WO2007050288A2/en
Publication of WO2007050288A3 publication Critical patent/WO2007050288A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823431—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Abstract

A method for making a semiconductor device (10) is provided. The method includes forming a first transistor (94) with a vertical active region (56) and a horizontal active region (54) extending on both sides of the vertical active region (56). The method further includes forming a second transistor (96) with a vertical active region (58). The method further includes forming a third transistor (98) with a vertical active region (60) and a horizontal active region (54) extending on only one side of the vertical active region (60).
PCT/US2006/039651 2005-10-25 2006-10-10 Multiple device types including an inverted-t channel transistor and method therefor WO2007050288A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008537740A JP5283507B2 (en) 2005-10-25 2006-10-10 Plural types of devices including inverted T-channel transistors and methods of manufacturing the same
KR1020087009819A KR101313473B1 (en) 2005-10-25 2006-10-10 Multiple device types including an inverted-t channel transistor and method therefor
EP06816683A EP1943671A4 (en) 2005-10-25 2006-10-10 Multiple device types including an inverted-t channel transistor and method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/257,972 US7452768B2 (en) 2005-10-25 2005-10-25 Multiple device types including an inverted-T channel transistor and method therefor
US11/257,972 2005-10-25

Publications (2)

Publication Number Publication Date
WO2007050288A2 WO2007050288A2 (en) 2007-05-03
WO2007050288A3 true WO2007050288A3 (en) 2008-01-03

Family

ID=37968335

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/039651 WO2007050288A2 (en) 2005-10-25 2006-10-10 Multiple device types including an inverted-t channel transistor and method therefor

Country Status (6)

Country Link
US (2) US7452768B2 (en)
EP (1) EP1943671A4 (en)
JP (1) JP5283507B2 (en)
KR (1) KR101313473B1 (en)
TW (1) TWI420603B (en)
WO (1) WO2007050288A2 (en)

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KR101108711B1 (en) * 2007-08-23 2012-01-30 삼성전자주식회사 Structure of active pattern and method of forming the same, non-volatile memory device and method of manufacturing the same
WO2009044236A1 (en) * 2007-10-03 2009-04-09 Freescale Semiconductor, Inc. Method of forming an inverted t shaped channel structure for an inverted t channel field effect transistor device
US7820512B2 (en) * 2007-12-28 2010-10-26 Intel Corporation Spacer patterned augmentation of tri-gate transistor gate length
US9245805B2 (en) * 2009-09-24 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs with metal gates and stressors
US20110291188A1 (en) * 2010-05-25 2011-12-01 International Business Machines Corporation Strained finfet
US8987831B2 (en) 2012-01-12 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells and arrays
CN103367432B (en) * 2012-03-31 2016-02-03 中芯国际集成电路制造(上海)有限公司 Multiple gate field effect transistor and manufacture method thereof
US9583398B2 (en) 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
JP2015053477A (en) * 2013-08-05 2015-03-19 株式会社半導体エネルギー研究所 Semiconductor device and method for manufacturing the same
US9373550B2 (en) 2014-04-23 2016-06-21 International Business Machines Corporation Selectively degrading current resistance of field effect transistor devices
US9391065B1 (en) 2015-06-29 2016-07-12 Globalfoundries Inc. Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US9893171B2 (en) 2016-06-03 2018-02-13 International Business Machines Corporation Fin field effect transistor fabrication and devices having inverted T-shaped gate
US10396075B2 (en) * 2017-05-01 2019-08-27 International Business Machines Corporation Very narrow aspect ratio trapping trench structure with smooth trench sidewalls
US10741566B2 (en) 2018-06-26 2020-08-11 Micron Technology, Inc. Integrated arrangements of pull-up transistors and pull-down transistors, and integrated static memory

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US6864519B2 (en) * 2002-11-26 2005-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS SRAM cell configured using multiple-gate transistors

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Also Published As

Publication number Publication date
US8643066B2 (en) 2014-02-04
KR20080061375A (en) 2008-07-02
US20070093054A1 (en) 2007-04-26
KR101313473B1 (en) 2013-10-01
EP1943671A2 (en) 2008-07-16
TWI420603B (en) 2013-12-21
JP5283507B2 (en) 2013-09-04
US7452768B2 (en) 2008-11-18
EP1943671A4 (en) 2009-12-30
TW200733245A (en) 2007-09-01
WO2007050288A2 (en) 2007-05-03
JP2009514214A (en) 2009-04-02
US20090039418A1 (en) 2009-02-12

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