WO2007053624A3 - Optical devices featuring textured semiconductor layers - Google Patents

Optical devices featuring textured semiconductor layers Download PDF

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Publication number
WO2007053624A3
WO2007053624A3 PCT/US2006/042483 US2006042483W WO2007053624A3 WO 2007053624 A3 WO2007053624 A3 WO 2007053624A3 US 2006042483 W US2006042483 W US 2006042483W WO 2007053624 A3 WO2007053624 A3 WO 2007053624A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layers
optical devices
semiconductor
leds
substrate
Prior art date
Application number
PCT/US2006/042483
Other languages
French (fr)
Other versions
WO2007053624A2 (en
Inventor
Theodore D Moustakas
Jasper S Cabalu
Original Assignee
Univ Boston
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Boston filed Critical Univ Boston
Priority to CA002627880A priority Critical patent/CA2627880A1/en
Priority to JP2008538970A priority patent/JP2009515340A/en
Priority to EP06827176A priority patent/EP1952449A4/en
Publication of WO2007053624A2 publication Critical patent/WO2007053624A2/en
Publication of WO2007053624A3 publication Critical patent/WO2007053624A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.
PCT/US2006/042483 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers WO2007053624A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CA002627880A CA2627880A1 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers
JP2008538970A JP2009515340A (en) 2005-10-31 2006-10-31 Optical device featuring a textured semiconductor layer
EP06827176A EP1952449A4 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73203405P 2005-10-31 2005-10-31
US60/732,034 2005-10-31

Publications (2)

Publication Number Publication Date
WO2007053624A2 WO2007053624A2 (en) 2007-05-10
WO2007053624A3 true WO2007053624A3 (en) 2009-04-30

Family

ID=38006465

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/042483 WO2007053624A2 (en) 2005-10-31 2006-10-31 Optical devices featuring textured semiconductor layers

Country Status (5)

Country Link
EP (1) EP1952449A4 (en)
JP (1) JP2009515340A (en)
CN (1) CN101506937A (en)
CA (1) CA2627880A1 (en)
WO (1) WO2007053624A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490921B (en) * 2007-11-21 2015-07-01 Mitsubishi Chem Corp Crystalline Growth Method of Nitride Semiconductor and Nitride Semiconductor and Nitride Semiconductor Light-emitting Element
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
US8492737B2 (en) 2010-11-18 2013-07-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Tunable infrared emitter
TW201436263A (en) * 2013-01-25 2014-09-16 Corsam Technologies Llc Photovoltaic dual textured glass
CN103280504A (en) * 2013-05-14 2013-09-04 西安神光皓瑞光电科技有限公司 Method for improving efficiency of luminescent device
CN104253179A (en) * 2013-06-28 2014-12-31 晶能光电（江西）有限公司 GaN-based LED epitaxial film preparation method
CN103413876A (en) * 2013-08-09 2013-11-27 西安神光皓瑞光电科技有限公司 Luminescent device and preparation method thereof
JP6434878B2 (en) * 2015-09-10 2018-12-05 株式会社東芝 Light emitting device
JP6846913B2 (en) * 2016-11-11 2021-03-24 日本碍子株式会社 Method for manufacturing wide-wavelength light-emitting device and wide-wavelength light-emitting device
FR3068484B1 (en) * 2017-06-29 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives COLOR PROJECTOR WITH TWO EMISSIVE SCREENS.
WO2021102666A1 (en) * 2019-11-26 2021-06-03 重庆康佳光电技术研究院有限公司 Light-emitting diode structure
CN113140618B (en) * 2021-03-31 2023-02-10 福建中晶科技有限公司 Sapphire composite substrate and preparation method thereof

Citations (8)

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Publication number Priority date Publication date Assignee Title
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US20020046693A1 (en) * 1997-04-11 2002-04-25 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
US6534336B1 (en) * 1999-05-21 2003-03-18 Canon Kabushiki Kaisha Production method of photoelectric conversion device, and photoelectric conversion device produced by the method
US6628249B1 (en) * 1999-11-12 2003-09-30 Sharp Kabushiki Kaisha Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus
US6733591B2 (en) * 1998-06-18 2004-05-11 University Of Florida Research Foundation, Inc. Method and apparatus for producing group-III nitrides
US6870191B2 (en) * 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
US20050185419A1 (en) * 2003-01-24 2005-08-25 Digital Optics International Corporation High-density illumination system

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP3424465B2 (en) * 1996-11-15 2003-07-07 日亜化学工業株式会社 Nitride semiconductor device and method of growing nitride semiconductor
JP3282174B2 (en) * 1997-01-29 2002-05-13 日亜化学工業株式会社 Nitride semiconductor light emitting device
JP3511923B2 (en) * 1998-12-25 2004-03-29 日亜化学工業株式会社 Light emitting element
JP4145437B2 (en) * 1999-09-28 2008-09-03 住友電気工業株式会社 Single crystal GaN crystal growth method, single crystal GaN substrate manufacturing method, and single crystal GaN substrate
JP3725382B2 (en) * 1999-11-11 2005-12-07 株式会社東芝 Semiconductor device manufacturing method and semiconductor light emitting device manufacturing method
JP4158519B2 (en) * 2002-12-26 2008-10-01 住友電気工業株式会社 White light emitting device and method for manufacturing the same
JP2005093682A (en) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ITS MANUFACTURING METHOD
US7348600B2 (en) * 2003-10-20 2008-03-25 Nichia Corporation Nitride semiconductor device, and its fabrication process
EP1735838B1 (en) * 2004-04-15 2011-10-05 Trustees of Boston University Optical devices featuring textured semiconductor layers

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020046693A1 (en) * 1997-04-11 2002-04-25 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6733591B2 (en) * 1998-06-18 2004-05-11 University Of Florida Research Foundation, Inc. Method and apparatus for producing group-III nitrides
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6534336B1 (en) * 1999-05-21 2003-03-18 Canon Kabushiki Kaisha Production method of photoelectric conversion device, and photoelectric conversion device produced by the method
US6628249B1 (en) * 1999-11-12 2003-09-30 Sharp Kabushiki Kaisha Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus
US6870191B2 (en) * 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
US20050185419A1 (en) * 2003-01-24 2005-08-25 Digital Optics International Corporation High-density illumination system

Non-Patent Citations (1)

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Title
See also references of EP1952449A4 *

Also Published As

Publication number Publication date
EP1952449A4 (en) 2011-06-29
EP1952449A2 (en) 2008-08-06
CN101506937A (en) 2009-08-12
CA2627880A1 (en) 2007-05-10
JP2009515340A (en) 2009-04-09
WO2007053624A2 (en) 2007-05-10

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