WO2007055985A3 - METHOD AND SYSTEM FOR PROVIDING A HETEROJUNCTION BIPOLAR TRANSISTOR HAVING SiGe EXTENSIONS - Google Patents

METHOD AND SYSTEM FOR PROVIDING A HETEROJUNCTION BIPOLAR TRANSISTOR HAVING SiGe EXTENSIONS Download PDF

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Publication number
WO2007055985A3
WO2007055985A3 PCT/US2006/042567 US2006042567W WO2007055985A3 WO 2007055985 A3 WO2007055985 A3 WO 2007055985A3 US 2006042567 W US2006042567 W US 2006042567W WO 2007055985 A3 WO2007055985 A3 WO 2007055985A3
Authority
WO
WIPO (PCT)
Prior art keywords
providing
bipolar transistor
region
sige
heterojunction bipolar
Prior art date
Application number
PCT/US2006/042567
Other languages
French (fr)
Other versions
WO2007055985A2 (en
Inventor
Darwin Gene Enicks
John Taylor Chaffee
Damian Carver
Original Assignee
Atmel Corp
Darwin Gene Enicks
John Taylor Chaffee
Damian Carver
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp, Darwin Gene Enicks, John Taylor Chaffee, Damian Carver filed Critical Atmel Corp
Publication of WO2007055985A2 publication Critical patent/WO2007055985A2/en
Publication of WO2007055985A3 publication Critical patent/WO2007055985A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Abstract

A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region including includes a compound box extension, providing an emitter region, and providing a collector region. The emitter region is coupled with the base region. The SiGe base region is coupled with the collector region and includes a SiGe box extension. The box extension resides substantially between the emitter and the heterogeneous base region.
PCT/US2006/042567 2005-11-04 2006-10-31 METHOD AND SYSTEM FOR PROVIDING A HETEROJUNCTION BIPOLAR TRANSISTOR HAVING SiGe EXTENSIONS WO2007055985A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/267,474 2005-11-04
US11/267,474 US20070102729A1 (en) 2005-11-04 2005-11-04 Method and system for providing a heterojunction bipolar transistor having SiGe extensions

Publications (2)

Publication Number Publication Date
WO2007055985A2 WO2007055985A2 (en) 2007-05-18
WO2007055985A3 true WO2007055985A3 (en) 2007-10-04

Family

ID=38002864

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/042567 WO2007055985A2 (en) 2005-11-04 2006-10-31 METHOD AND SYSTEM FOR PROVIDING A HETEROJUNCTION BIPOLAR TRANSISTOR HAVING SiGe EXTENSIONS

Country Status (3)

Country Link
US (1) US20070102729A1 (en)
TW (1) TW200729487A (en)
WO (1) WO2007055985A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US20090189159A1 (en) * 2008-01-28 2009-07-30 Atmel Corporation Gettering layer on substrate
CN103441142A (en) * 2013-08-22 2013-12-11 中国电子科技集团公司第二十四研究所 Sige heterojunction bipolar transistor
CN103673892B (en) * 2013-11-21 2016-03-30 清华大学 A kind of symmetrical expression grating difference interference re-diffraction measurement mechanism
US10593771B2 (en) * 2017-12-11 2020-03-17 International Business Machines Corporation Vertical fin-type bipolar junction transistor with self-aligned base contact

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030201461A1 (en) * 2002-04-30 2003-10-30 Fujitsu Limited Heterobipolar transistor and method of fabricating the same
US6759697B2 (en) * 2000-09-11 2004-07-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2122738A5 (en) * 1971-01-21 1972-09-01 Corobit Anstalt
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
US4352532A (en) * 1980-09-15 1982-10-05 Robertshaw Controls Company Manifolding means for electrical and/or pneumatic control units and parts and methods therefor
US4383547A (en) * 1981-03-27 1983-05-17 Valin Corporation Purging apparatus
US4437479A (en) * 1981-12-30 1984-03-20 Atcor Decontamination apparatus for semiconductor wafer handling equipment
US4852516A (en) * 1986-05-19 1989-08-01 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4771326A (en) * 1986-07-09 1988-09-13 Texas Instruments Incorporated Composition double heterojunction transistor
GB8708926D0 (en) * 1987-04-14 1987-05-20 British Telecomm Bipolar transistor
US5001534A (en) * 1989-07-11 1991-03-19 At&T Bell Laboratories Heterojunction bipolar transistor
US5316958A (en) * 1990-05-31 1994-05-31 International Business Machines Corporation Method of dopant enhancement in an epitaxial silicon layer by using germanium
US5137047A (en) * 1990-08-24 1992-08-11 Mark George Delivery of reactive gas from gas pad to process tool
JP3130545B2 (en) * 1991-03-06 2001-01-31 株式会社東芝 Semiconductor device and method of manufacturing semiconductor device
JP3150376B2 (en) * 1991-09-30 2001-03-26 ローム株式会社 Fabrication of heterojunction bipolar transistor
JPH05109750A (en) * 1991-10-15 1993-04-30 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture of the same
US5352912A (en) * 1991-11-13 1994-10-04 International Business Machines Corporation Graded bandgap single-crystal emitter heterojunction bipolar transistor
FR2692721B1 (en) * 1992-06-17 1995-06-30 France Telecom METHOD FOR PRODUCING A BIPOLAR HETEROJUNCTION TRANSISTOR AND TRANSISTOR OBTAINED.
JP2582519B2 (en) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション Bipolar transistor and method of manufacturing the same
US5316171A (en) * 1992-10-01 1994-05-31 Danner Harold J Jun Vacuum insulated container
US5426316A (en) * 1992-12-21 1995-06-20 International Business Machines Corporation Triple heterojunction bipolar transistor
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
US5449294A (en) * 1993-03-26 1995-09-12 Texas Instruments Incorporated Multiple valve assembly and process
JP3156436B2 (en) * 1993-04-05 2001-04-16 日本電気株式会社 Heterojunction bipolar transistor
US5631173A (en) * 1993-07-12 1997-05-20 Texas Instruments Incorporated Method for forming collector up heterojunction bipolar transistor having insulative extrinsic emitter
JP2551364B2 (en) * 1993-11-26 1996-11-06 日本電気株式会社 Semiconductor device
US5583059A (en) * 1994-06-01 1996-12-10 International Business Machines Corporation Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
FR2736468B1 (en) * 1995-07-07 1997-08-14 Thomson Csf BIPOLAR TRANSISTOR WITH OPTIMIZED STRUCTURE
KR100205017B1 (en) * 1995-12-20 1999-07-01 이계철 Method for manufacturing heterojunction bipolar transistor
JPH1079506A (en) * 1996-02-07 1998-03-24 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
DE19609933A1 (en) * 1996-03-14 1997-09-18 Daimler Benz Ag Method of manufacturing a heterobipolar transistor
AU2139197A (en) * 1996-03-29 1997-10-22 Minnesota Mining And Manufacturing Company Apparatus and method for drying a coating on a substrate employing multiple drying subzones
US6099599A (en) * 1996-05-08 2000-08-08 Industrial Technology Research Institute Semiconductor device fabrication system
US5992463A (en) * 1996-10-30 1999-11-30 Unit Instruments, Inc. Gas panel
US6114216A (en) * 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
DE69735938T2 (en) * 1997-01-10 2007-01-25 Nippon Valqua Industries, Ltd. SURFACE MODIFIED FLUOROUGH SEALING MATERIAL
US5912481A (en) * 1997-09-29 1999-06-15 National Scientific Corp. Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
US6423990B1 (en) * 1997-09-29 2002-07-23 National Scientific Corporation Vertical heterojunction bipolar transistor
US6087683A (en) * 1998-07-31 2000-07-11 Lucent Technologies Silicon germanium heterostructure bipolar transistor with indium doped base
US6598279B1 (en) * 1998-08-21 2003-07-29 Micron Technology, Inc. Multiple connection socket assembly for semiconductor fabrication equipment and methods employing same
US6563145B1 (en) * 1999-04-19 2003-05-13 Chang Charles E Methods and apparatus for a composite collector double heterojunction bipolar transistor
TW567559B (en) * 1999-06-23 2003-12-21 Hitachi Ltd Semiconductor device
US6199255B1 (en) * 1999-10-06 2001-03-13 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus for disassembling an injector head
US6521974B1 (en) * 1999-10-14 2003-02-18 Hitachi, Ltd. Bipolar transistor and manufacturing method thereof
US6442867B2 (en) * 2000-01-04 2002-09-03 Texas Instruments Incorporated Apparatus and method for cleaning a vertical furnace pedestal and cap
US6573539B2 (en) * 2000-01-10 2003-06-03 International Business Machines Corporation Heterojunction bipolar transistor with silicon-germanium base
US6251738B1 (en) * 2000-01-10 2001-06-26 International Business Machines Corporation Process for forming a silicon-germanium base of heterojunction bipolar transistor
US6325886B1 (en) * 2000-02-14 2001-12-04 Redwood Microsystems, Inc. Method for attaching a micromechanical device to a manifold, and fluid control system produced thereby
US6531369B1 (en) * 2000-03-01 2003-03-11 Applied Micro Circuits Corporation Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)
US6410396B1 (en) * 2000-04-26 2002-06-25 Mississippi State University Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications
US6555874B1 (en) * 2000-08-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate
AU2001288629A1 (en) * 2000-08-31 2002-03-13 Chemtrace, Inc. Cleaning of semiconductor process equipment chamber parts using organic solvents
US6349744B1 (en) * 2000-10-13 2002-02-26 Mks Instruments, Inc. Manifold for modular gas box system
US6791692B2 (en) * 2000-11-29 2004-09-14 Lightwind Corporation Method and device utilizing plasma source for real-time gas sampling
US6509242B2 (en) * 2001-01-12 2003-01-21 Agere Systems Inc. Heterojunction bipolar transistor
US6696710B2 (en) * 2001-02-27 2004-02-24 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
US6541346B2 (en) * 2001-03-20 2003-04-01 Roger J. Malik Method and apparatus for a self-aligned heterojunction bipolar transistor using dielectric assisted metal liftoff process
US20020149033A1 (en) * 2001-04-12 2002-10-17 Michael Wojtowicz GaN HBT superlattice base structure
US6459104B1 (en) * 2001-05-10 2002-10-01 Newport Fab Method for fabricating lateral PNP heterojunction bipolar transistor and related structure
US6861324B2 (en) * 2001-06-15 2005-03-01 Maxim Integrated Products, Inc. Method of forming a super self-aligned hetero-junction bipolar transistor
US20030012925A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Process for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same and including an etch stop layer used for back side processing
US6870204B2 (en) * 2001-11-21 2005-03-22 Astralux, Inc. Heterojunction bipolar transistor containing at least one silicon carbide layer
JP4060580B2 (en) * 2001-11-29 2008-03-12 株式会社ルネサステクノロジ Heterojunction bipolar transistor
TW200301017A (en) * 2001-12-11 2003-06-16 Matsushita Electric Ind Co Ltd Hetero bipolar transistor
US6794237B2 (en) * 2001-12-27 2004-09-21 Texas Instruments Incorporated Lateral heterojunction bipolar transistor
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
JP3914064B2 (en) * 2002-02-28 2007-05-16 富士通株式会社 Method and apparatus for growing mixed crystal film
JP2003297849A (en) * 2002-04-05 2003-10-17 Toshiba Corp Heterojunction bipolar transistor and manufacture method therefor
US6806513B2 (en) * 2002-10-08 2004-10-19 Eic Corporation Heterojunction bipolar transistor having wide bandgap material in collector
US7556048B2 (en) * 2002-11-15 2009-07-07 Agere Systems Inc. In-situ removal of surface impurities prior to arsenic-doped polysilicon deposition in the fabrication of a heterojunction bipolar transistor
US6764918B2 (en) * 2002-12-02 2004-07-20 Semiconductor Components Industries, L.L.C. Structure and method of making a high performance semiconductor device having a narrow doping profile
US6861323B2 (en) * 2003-02-21 2005-03-01 Micrel, Inc. Method for forming a SiGe heterojunction bipolar transistor having reduced base resistance
US6845034B2 (en) * 2003-03-11 2005-01-18 Micron Technology, Inc. Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons
US6797578B1 (en) * 2003-05-13 2004-09-28 Newport Fab, Llc Method for fabrication of emitter of a transistor and related structure
US7439558B2 (en) * 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759697B2 (en) * 2000-09-11 2004-07-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor
US20030201461A1 (en) * 2002-04-30 2003-10-30 Fujitsu Limited Heterobipolar transistor and method of fabricating the same

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Publication number Publication date
TW200729487A (en) 2007-08-01
US20070102729A1 (en) 2007-05-10
WO2007055985A2 (en) 2007-05-18

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