WO2007064771A3 - Imager device with opaque layer blocking light from the peripheral circuitry and its manufacturing method - Google Patents

Imager device with opaque layer blocking light from the peripheral circuitry and its manufacturing method Download PDF

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Publication number
WO2007064771A3
WO2007064771A3 PCT/US2006/045805 US2006045805W WO2007064771A3 WO 2007064771 A3 WO2007064771 A3 WO 2007064771A3 US 2006045805 W US2006045805 W US 2006045805W WO 2007064771 A3 WO2007064771 A3 WO 2007064771A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuitry
manufacturing
peripheral circuitry
die
opaque layer
Prior art date
Application number
PCT/US2006/045805
Other languages
French (fr)
Other versions
WO2007064771A2 (en
Inventor
Ulrich C Boettiger
Zhaohui Yang
Original Assignee
Micron Technology Inc
Ulrich C Boettiger
Zhaohui Yang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Ulrich C Boettiger, Zhaohui Yang filed Critical Micron Technology Inc
Priority to JP2008543444A priority Critical patent/JP2009518824A/en
Priority to EP06838656A priority patent/EP1955375A2/en
Publication of WO2007064771A2 publication Critical patent/WO2007064771A2/en
Publication of WO2007064771A3 publication Critical patent/WO2007064771A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Methods and apparatuses are disclosed which provide imager devices having a light blocking material layer formed over peripheral circuitry outside a pixel cell array. The imager devices comprises a die; a pixel cell array formed in association with said die; peripherical circuitry formed in association with said die and electrically connected to said pixel cell array; a first frame forming a perimeter around said peripherical circuitry; and asubstantially opaque material layer over said circuitry, said material layer being coupled to said frame.
PCT/US2006/045805 2005-11-30 2006-11-30 Imager device with opaque layer blocking light from the peripheral circuitry and its manufacturing method WO2007064771A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008543444A JP2009518824A (en) 2005-11-30 2006-11-30 Method and apparatus for blocking light to peripheral circuit of imaging device
EP06838656A EP1955375A2 (en) 2005-11-30 2006-11-30 Method and apparatus for blocking light to peripheral circuitry of an imager device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/289,553 2005-11-30
US11/289,553 US7608875B2 (en) 2005-11-30 2005-11-30 Method and apparatus for blocking light to peripheral circuitry of an imager device

Publications (2)

Publication Number Publication Date
WO2007064771A2 WO2007064771A2 (en) 2007-06-07
WO2007064771A3 true WO2007064771A3 (en) 2007-07-19

Family

ID=37857116

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/045805 WO2007064771A2 (en) 2005-11-30 2006-11-30 Imager device with opaque layer blocking light from the peripheral circuitry and its manufacturing method

Country Status (6)

Country Link
US (1) US7608875B2 (en)
EP (1) EP1955375A2 (en)
JP (1) JP2009518824A (en)
KR (1) KR100950146B1 (en)
CN (1) CN101351889A (en)
WO (1) WO2007064771A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879340B1 (en) * 1998-08-19 2005-04-12 Micron Technology Inc. CMOS imager with integrated non-volatile memory
JP2014103299A (en) * 2012-11-21 2014-06-05 Toppan Printing Co Ltd Solid state image sensor
KR102537320B1 (en) 2018-02-19 2023-05-30 에스케이하이닉스 주식회사 Image sensor Having Micro Lenses Arrayed In Different Periods With Each Other

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1389804A2 (en) * 2002-08-13 2004-02-18 Agilent Technologies Inc. (a Delaware Corporation) CMOS image sensor using gradient index chip scale lenses
US6737626B1 (en) * 2001-08-06 2004-05-18 Pixim, Inc. Image sensors with underlying and lateral insulator structures
EP1487020A2 (en) * 2003-05-30 2004-12-15 Matsushita Electric Industrial Co., Ltd. Image sensor and manufacturing method of image sensor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4105363A (en) * 1976-06-14 1978-08-08 Loth John Lodewyk Overspeed control arrangement for vertical axis wind turbines
DE2829716A1 (en) * 1977-07-07 1979-01-25 Univ Gakko Hojin Tokai WIND POWER MACHINE WITH VERTICAL AXIS
DE3512420C1 (en) * 1985-04-04 1986-09-11 Michael 6100 Darmstadt Martin Wind energy converter
US6051857A (en) 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
US6140630A (en) * 1998-10-14 2000-10-31 Micron Technology, Inc. Vcc pump for CMOS imagers
JP3687366B2 (en) * 1998-10-23 2005-08-24 セイコーエプソン株式会社 Optical substrate, manufacturing method thereof, and display device
US6376868B1 (en) * 1999-06-15 2002-04-23 Micron Technology, Inc. Multi-layered gate for a CMOS imager
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6326652B1 (en) * 1999-06-18 2001-12-04 Micron Technology, Inc., CMOS imager with a self-aligned buried contact
US6204524B1 (en) * 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
US6333205B1 (en) * 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
US7919827B2 (en) * 2005-03-11 2011-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and structure for reducing noise in CMOS image sensors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737626B1 (en) * 2001-08-06 2004-05-18 Pixim, Inc. Image sensors with underlying and lateral insulator structures
EP1389804A2 (en) * 2002-08-13 2004-02-18 Agilent Technologies Inc. (a Delaware Corporation) CMOS image sensor using gradient index chip scale lenses
EP1487020A2 (en) * 2003-05-30 2004-12-15 Matsushita Electric Industrial Co., Ltd. Image sensor and manufacturing method of image sensor

Also Published As

Publication number Publication date
EP1955375A2 (en) 2008-08-13
WO2007064771A2 (en) 2007-06-07
US20070120162A1 (en) 2007-05-31
JP2009518824A (en) 2009-05-07
KR100950146B1 (en) 2010-03-30
US7608875B2 (en) 2009-10-27
KR20080068746A (en) 2008-07-23
CN101351889A (en) 2009-01-21

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