WO2007100558A3 - Modeling for semiconductor fabrication process effects - Google Patents
Modeling for semiconductor fabrication process effects Download PDFInfo
- Publication number
- WO2007100558A3 WO2007100558A3 PCT/US2007/004414 US2007004414W WO2007100558A3 WO 2007100558 A3 WO2007100558 A3 WO 2007100558A3 US 2007004414 W US2007004414 W US 2007004414W WO 2007100558 A3 WO2007100558 A3 WO 2007100558A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adjusted
- simulation
- contour
- layout
- width
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Abstract
In one embodiment, a method for determining a contour simplification of an object for a simulation is provided. An object in a layout of a transistor design to be created with the photolithographic process is determined, such as a gate or interconnect. The object includes a width and a length in the layout. A contour simulation is performed to determine a generated contour object. The contour simulation simulates variation factors that may occur in the photolithographic process. One or more adjusted widths and adjusted lengths of the object are then determined based on the generated contour object. The adjusted width and the adjusted length are usable to determine a parametric model for simulation of the object. For example, a layout versus schematic (LVS) tool may back-annotate the layout. Then, a SPICE simulation may use the output of the LVS tool to verify the electrical behavior of the transistor or interconnect using the adjusted width and adjusted length.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77451106P | 2006-02-17 | 2006-02-17 | |
US60/774,511 | 2006-02-17 | ||
US11/707,635 | 2007-02-16 | ||
US11/707,635 US8015510B2 (en) | 2006-02-17 | 2007-02-16 | Interconnection modeling for semiconductor fabrication process effects |
US11/707,661 US7577932B2 (en) | 2006-02-17 | 2007-02-16 | Gate modeling for semiconductor fabrication process effects |
US11/707,661 | 2007-02-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2007100558A2 WO2007100558A2 (en) | 2007-09-07 |
WO2007100558A3 true WO2007100558A3 (en) | 2008-04-03 |
Family
ID=38459520
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/004414 WO2007100558A2 (en) | 2006-02-17 | 2007-02-20 | Modeling for semiconductor fabrication process effects |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2007100558A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200811684A (en) | 2006-02-17 | 2008-03-01 | Mentor Graphics Corp | Gate modeling for semiconductor fabrication process effects |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610833A (en) * | 1992-06-02 | 1997-03-11 | Hewlett-Packard Company | Computer-aided design methods and apparatus for multilevel interconnect technologies |
US6219630B1 (en) * | 1995-12-07 | 2001-04-17 | Matsushita Electronics Corporation | Apparatus and method for extracting circuit, system and method for generating information for simulation, and netlist |
US6562638B1 (en) * | 1999-12-30 | 2003-05-13 | Cypress Semiconductor Corp. | Integrated scheme for predicting yield of semiconductor (MOS) devices from designed layout |
US20050251771A1 (en) * | 2004-05-07 | 2005-11-10 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
-
2007
- 2007-02-20 WO PCT/US2007/004414 patent/WO2007100558A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5610833A (en) * | 1992-06-02 | 1997-03-11 | Hewlett-Packard Company | Computer-aided design methods and apparatus for multilevel interconnect technologies |
US6219630B1 (en) * | 1995-12-07 | 2001-04-17 | Matsushita Electronics Corporation | Apparatus and method for extracting circuit, system and method for generating information for simulation, and netlist |
US6562638B1 (en) * | 1999-12-30 | 2003-05-13 | Cypress Semiconductor Corp. | Integrated scheme for predicting yield of semiconductor (MOS) devices from designed layout |
US20050251771A1 (en) * | 2004-05-07 | 2005-11-10 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
Also Published As
Publication number | Publication date |
---|---|
WO2007100558A2 (en) | 2007-09-07 |
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