WO2007118042A3 - Depositing ruthenium films using ionized physical vapor deposition (ipvd) - Google Patents

Depositing ruthenium films using ionized physical vapor deposition (ipvd) Download PDF

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Publication number
WO2007118042A3
WO2007118042A3 PCT/US2007/065756 US2007065756W WO2007118042A3 WO 2007118042 A3 WO2007118042 A3 WO 2007118042A3 US 2007065756 W US2007065756 W US 2007065756W WO 2007118042 A3 WO2007118042 A3 WO 2007118042A3
Authority
WO
WIPO (PCT)
Prior art keywords
ipvd
vapor deposition
physical vapor
ionized physical
ruthenium films
Prior art date
Application number
PCT/US2007/065756
Other languages
French (fr)
Other versions
WO2007118042A2 (en
Inventor
Frank M Cerio Jr
Original Assignee
Tokyo Electron Ltd
Tokyo Electron America Inc
Frank M Cerio Jr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron America Inc, Frank M Cerio Jr filed Critical Tokyo Electron Ltd
Publication of WO2007118042A2 publication Critical patent/WO2007118042A2/en
Publication of WO2007118042A3 publication Critical patent/WO2007118042A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma

Abstract

An iPVD system (200A) is programmed to deposit a barrier and/or seed layer (10) using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates (12, 211 ) using a process which enhances the sidewalÊ (16) coverage compared to the field and bottom (15) coverage(s) while minimizing or eliminating overhang within an IPVD processing chamber (220). In the preferred embodiment, an IPVD apparatus having a frusto-conical ruthenium target (225) equipped with a high density ICP source is provided.
PCT/US2007/065756 2006-04-07 2007-04-02 Depositing ruthenium films using ionized physical vapor deposition (ipvd) WO2007118042A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/279,064 2006-04-07
US11/279,064 US7588667B2 (en) 2006-04-07 2006-04-07 Depositing rhuthenium films using ionized physical vapor deposition (IPVD)

Publications (2)

Publication Number Publication Date
WO2007118042A2 WO2007118042A2 (en) 2007-10-18
WO2007118042A3 true WO2007118042A3 (en) 2008-11-27

Family

ID=38573997

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/065756 WO2007118042A2 (en) 2006-04-07 2007-04-02 Depositing ruthenium films using ionized physical vapor deposition (ipvd)

Country Status (2)

Country Link
US (1) US7588667B2 (en)
WO (1) WO2007118042A2 (en)

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US7892406B2 (en) * 2005-03-28 2011-02-22 Tokyo Electron Limited Ionized physical vapor deposition (iPVD) process
US20090321247A1 (en) * 2004-03-05 2009-12-31 Tokyo Electron Limited IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS
JP4866658B2 (en) * 2006-05-23 2012-02-01 東京エレクトロン株式会社 Semiconductor manufacturing equipment
US8508018B2 (en) * 2010-09-24 2013-08-13 Intel Corporation Barrier layers
US9051638B2 (en) 2013-03-01 2015-06-09 Poole Ventura, Inc. In-situ sputtering apparatus
US9370907B2 (en) * 2014-03-20 2016-06-21 Seagate Technology Llc Apparatuses and methods utilizing etch stop layers
US10079174B2 (en) * 2014-04-30 2018-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Composite contact plug structure and method of making same
US9805747B2 (en) * 2015-08-17 2017-10-31 Western Digital Technologies, Inc. Method for making a perpendicular magnetic recording write head with write pole having thin side gaps and thicker leading gap
TWI717554B (en) 2016-10-03 2021-02-01 美商應用材料股份有限公司 Methods and devices using pvd ruthenium
KR20190068897A (en) * 2017-12-11 2019-06-19 삼성전자주식회사 A photo mask, a method for manufacturing the same, and a method for semiconductor device using the same
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2020154310A1 (en) 2019-01-22 2020-07-30 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing

Citations (3)

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US5637533A (en) * 1995-05-17 1997-06-10 Hyundai Electronics Industries Co., Ltd. Method for fabricating a diffusion barrier metal layer in a semiconductor device
US20030022454A1 (en) * 2001-07-13 2003-01-30 Fujitsu Limited Capacitor and method of manufacturing the same
US20030034244A1 (en) * 2001-05-04 2003-02-20 Tugrul Yasar Ionized PVD with sequential deposition and etching

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US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US7744735B2 (en) * 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637533A (en) * 1995-05-17 1997-06-10 Hyundai Electronics Industries Co., Ltd. Method for fabricating a diffusion barrier metal layer in a semiconductor device
US20030034244A1 (en) * 2001-05-04 2003-02-20 Tugrul Yasar Ionized PVD with sequential deposition and etching
US20030022454A1 (en) * 2001-07-13 2003-01-30 Fujitsu Limited Capacitor and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SO F.C.T. ET AL.: "Summary Abstract: Reactively sputtered RuO2 and Mo-O diffusion barriers", J. VAC. SCI. TECH. B, vol. 5, no. 6, November 1987 (1987-11-01) - December 1987 (1987-12-01), pages 1748 - 1749, XP000008351, DOI: doi:10.1116/1.583631 *

Also Published As

Publication number Publication date
US7588667B2 (en) 2009-09-15
WO2007118042A2 (en) 2007-10-18
US20070235321A1 (en) 2007-10-11

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