WO2007118204A3 - Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates - Google Patents

Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates Download PDF

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Publication number
WO2007118204A3
WO2007118204A3 PCT/US2007/066166 US2007066166W WO2007118204A3 WO 2007118204 A3 WO2007118204 A3 WO 2007118204A3 US 2007066166 W US2007066166 W US 2007066166W WO 2007118204 A3 WO2007118204 A3 WO 2007118204A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
zinc oxide
transparent conductive
sputtering
large area
Prior art date
Application number
PCT/US2007/066166
Other languages
French (fr)
Other versions
WO2007118204A2 (en
Inventor
Allen Ka-Ling Lau
Makoto Inagawa
Bradley O Stimson
Akihiro Hosokawa
John M White
Yan Ye
Ankur Kadam
Yanping Li
Original Assignee
Applied Materials Inc
Allen Ka-Ling Lau
Makoto Inagawa
Bradley O Stimson
Akihiro Hosokawa
John M White
Yan Ye
Ankur Kadam
Yanping Li
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/399,233 external-priority patent/US20070235320A1/en
Application filed by Applied Materials Inc, Allen Ka-Ling Lau, Makoto Inagawa, Bradley O Stimson, Akihiro Hosokawa, John M White, Yan Ye, Ankur Kadam, Yanping Li filed Critical Applied Materials Inc
Priority to CN2007800117776A priority Critical patent/CN101415857B/en
Priority to JP2009504494A priority patent/JP5222281B2/en
Priority to KR1020087027006A priority patent/KR101150142B1/en
Publication of WO2007118204A2 publication Critical patent/WO2007118204A2/en
Publication of WO2007118204A3 publication Critical patent/WO2007118204A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Abstract

The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.
PCT/US2007/066166 2006-04-06 2007-04-06 Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates WO2007118204A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007800117776A CN101415857B (en) 2006-04-06 2007-04-06 Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
JP2009504494A JP5222281B2 (en) 2006-04-06 2007-04-06 Reactive sputtering of zinc oxide transparent conductive oxide on large area substrates
KR1020087027006A KR101150142B1 (en) 2006-04-06 2007-04-06 Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/399,233 2006-04-06
US11/399,233 US20070235320A1 (en) 2006-04-06 2006-04-06 Reactive sputtering chamber with gas distribution tubes
US80739106P 2006-07-14 2006-07-14
US60/807,391 2006-07-14

Publications (2)

Publication Number Publication Date
WO2007118204A2 WO2007118204A2 (en) 2007-10-18
WO2007118204A3 true WO2007118204A3 (en) 2007-12-06

Family

ID=38581843

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/066166 WO2007118204A2 (en) 2006-04-06 2007-04-06 Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates

Country Status (5)

Country Link
US (2) US20070261951A1 (en)
JP (1) JP5222281B2 (en)
KR (1) KR101150142B1 (en)
TW (1) TWI401330B (en)
WO (1) WO2007118204A2 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034317B2 (en) 2007-06-18 2011-10-11 Heliovolt Corporation Assemblies of anisotropic nanoparticles
CN101910449B (en) * 2007-12-28 2012-10-31 株式会社爱发科 Method and apparatus for forming transparent conductive film
CN101260507B (en) * 2008-04-24 2010-12-15 复旦大学 P-type semiconductor nickel-doping copper oxide target material and preparation method thereof
KR20110111369A (en) * 2009-02-04 2011-10-11 헬리오볼트 코오퍼레이션 Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films
WO2011028269A1 (en) * 2009-09-04 2011-03-10 Heliovolt Corporation Cadmium-free thin film for use in solar cells
JP2011084804A (en) * 2009-09-18 2011-04-28 Kobelco Kaken:Kk Metal oxide-metal composite sputtering target
KR101137390B1 (en) * 2009-12-24 2012-04-26 삼성모바일디스플레이주식회사 Optical film and organic light emitting display apparatus having the same
KR101156436B1 (en) 2010-01-19 2012-06-18 삼성모바일디스플레이주식회사 Optical film and organic light emitting display apparatus having the same
KR101117734B1 (en) * 2010-01-21 2012-02-24 삼성모바일디스플레이주식회사 Organic light emitting device
US8021641B2 (en) 2010-02-04 2011-09-20 Alliance For Sustainable Energy, Llc Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom
US9502222B2 (en) 2010-04-16 2016-11-22 Viavi Solutions Inc. Integrated anode and activated reactive gas source for use in magnetron sputtering device
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
KR101740646B1 (en) 2010-10-25 2017-05-29 삼성디스플레이 주식회사 Optical unit and organic light emitting diode display having the same
DK2509100T3 (en) * 2011-04-06 2019-11-04 Viavi Solutions Inc Integrated anode and activated reactive gas source for use in a magnetron sputtering device
EP2748351A1 (en) * 2011-08-25 2014-07-02 Applied Materials, Inc. Sputtering apparatus and method
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
KR101975929B1 (en) 2012-06-29 2019-05-09 삼성전자주식회사 Transistor having oxynitride channel layer and method of manufacturing the same
KR20140036765A (en) 2012-09-18 2014-03-26 삼성디스플레이 주식회사 Sputtring device
CN105051244B (en) * 2012-10-08 2018-11-16 康宁股份有限公司 The Zinc oxide film of the aluminium doping of the electrically conducting transparent of sputtering
US20140110255A1 (en) * 2012-10-18 2014-04-24 Primestar Solar, Inc. Cylindrical target having an inhomogeneous sputtering surface for depositing a homogeneous film
US9929310B2 (en) 2013-03-14 2018-03-27 Applied Materials, Inc. Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices
WO2016126650A1 (en) * 2015-02-03 2016-08-11 Cardinal Cg Company Sputtering apparatus including gas distribution system
KR102407392B1 (en) * 2015-07-03 2022-06-13 삼성디스플레이 주식회사 Sputtering apparatus and sputtering method using the same
US11393665B2 (en) * 2018-08-10 2022-07-19 Applied Materials, Inc. Physical vapor deposition (PVD) chamber with reduced arcing
CN111455332B (en) * 2019-09-03 2022-03-08 北京北方华创微电子装备有限公司 Sputtering chamber
KR20210148458A (en) 2020-05-28 2021-12-08 삼성디스플레이 주식회사 Depositing device and depositing method using depositing device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
US20030207093A1 (en) * 2001-12-03 2003-11-06 Toshio Tsuji Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
US20040175511A1 (en) * 2002-12-31 2004-09-09 Klaus Hartig Coater having substrate cleaning device and coating deposition methods employing such coater

Family Cites Families (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331737A (en) * 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
DE3331707A1 (en) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln METHOD AND DEVICE FOR REACTIVELY SPRAYING CONNECTIONS FROM METALS AND SEMICONDUCTORS
JPS61577A (en) * 1984-06-13 1986-01-06 Matsushita Electric Ind Co Ltd Sputtering device
FR2579754B1 (en) * 1985-04-02 1987-07-31 Centre Nat Rech Scient NITRIDES AND OXYNITRIDES USEFUL AS SELECTIVE DETECTORS OF REDUCING GASES IN THE ATMOSPHERE, AND DETECTION DEVICE CONTAINING THEM
DE3521053A1 (en) 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln DEVICE FOR APPLYING THIN LAYERS TO A SUBSTRATE
DE3611492A1 (en) * 1986-04-05 1987-10-22 Leybold Heraeus Gmbh & Co Kg METHOD AND DEVICE FOR COATING TOOLS FOR CUTTING AND FORMING TECHNOLOGY WITH PLASTIC LAYERS
US4769291A (en) * 1987-02-02 1988-09-06 The Boc Group, Inc. Transparent coatings by reactive sputtering
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
FR2638527B1 (en) * 1988-11-02 1991-02-01 Centre Nat Rech Scient GALLIUM NITRIDE AND OXYNITRIDES USEFUL AS SELECTIVE DETECTORS OF REDUCING GASES IN THE ATMOSPHERE, PROCESS FOR THEIR PREPARATION, AND DETECTION DEVICE CONTAINING THEM
JPH03219077A (en) * 1989-11-06 1991-09-26 Ricoh Co Ltd Thin film forming device
JP2934711B2 (en) * 1989-12-07 1999-08-16 カシオ計算機株式会社 Sputtering equipment
CA2034118A1 (en) * 1990-02-09 1991-08-10 Nang Tri Tran Solid state radiation detector
DE4006411C2 (en) * 1990-03-01 1997-05-28 Leybold Ag Device for applying thin layers on a substrate
JP2999280B2 (en) * 1991-02-22 2000-01-17 キヤノン株式会社 Photovoltaic element
JP2994812B2 (en) * 1991-09-26 1999-12-27 キヤノン株式会社 Solar cell
CH687258A5 (en) * 1993-04-22 1996-10-31 Balzers Hochvakuum Gas inlet arrangement.
US5346601A (en) * 1993-05-11 1994-09-13 Andrew Barada Sputter coating collimator with integral reactive gas distribution
TW273067B (en) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
JP3571785B2 (en) * 1993-12-28 2004-09-29 キヤノン株式会社 Method and apparatus for forming deposited film
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5668663A (en) * 1994-05-05 1997-09-16 Donnelly Corporation Electrochromic mirrors and devices
JPH07331433A (en) * 1994-06-07 1995-12-19 Hitachi Ltd Sputtering device
US5651865A (en) * 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
JP3169337B2 (en) * 1995-05-30 2001-05-21 キヤノン株式会社 Photovoltaic element and method for manufacturing the same
US5716480A (en) * 1995-07-13 1998-02-10 Canon Kabushiki Kaisha Photovoltaic device and method of manufacturing the same
KR100251070B1 (en) * 1996-08-28 2000-04-15 미다라이 후지오 Photovoltaic device
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
US6238527B1 (en) * 1997-10-08 2001-05-29 Canon Kabushiki Kaisha Thin film forming apparatus and method of forming thin film of compound by using the same
JP4208281B2 (en) * 1998-02-26 2009-01-14 キヤノン株式会社 Multilayer photovoltaic device
US6388301B1 (en) * 1998-06-01 2002-05-14 Kaneka Corporation Silicon-based thin-film photoelectric device
US7235810B1 (en) * 1998-12-03 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
CA2256847A1 (en) * 1998-12-22 2000-06-22 Munther Kandah Particle-free cathodic arc carbon ion source
US20020084455A1 (en) * 1999-03-30 2002-07-04 Jeffery T. Cheung Transparent and conductive zinc oxide film with low growth temperature
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6953947B2 (en) * 1999-12-31 2005-10-11 Lg Chem, Ltd. Organic thin film transistor
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
KR100679917B1 (en) * 2000-09-09 2007-02-07 엘지.필립스 엘시디 주식회사 Thin film transistor and the method of fabricating the same
AU2002235146A1 (en) * 2000-11-30 2002-06-11 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
US6943359B2 (en) * 2001-03-13 2005-09-13 University Of Utah Structured organic materials and devices using low-energy particle beams
US6740938B2 (en) * 2001-04-16 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Transistor provided with first and second gate electrodes with channel region therebetween
JP4560245B2 (en) * 2001-06-29 2010-10-13 キヤノン株式会社 Photovoltaic element
US20030049464A1 (en) * 2001-09-04 2003-03-13 Afg Industries, Inc. Double silver low-emissivity and solar control coatings
AU2003220852B2 (en) * 2002-04-09 2008-12-11 Kaneka Corporation Method for fabricating tandem thin film photoelectric converter
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
US7166199B2 (en) * 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
JP2004363560A (en) * 2003-05-09 2004-12-24 Seiko Epson Corp Substrate, device, process for fabricating device, process for producing active matrix substrate,electrooptic device and electronic apparatus
WO2004102677A1 (en) * 2003-05-13 2004-11-25 Asahi Glass Company, Limited Transparent conductive substrate for solar battery and method for producing same
US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
US7816863B2 (en) * 2003-09-12 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
JP4823478B2 (en) * 2003-09-19 2011-11-24 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
US7122398B1 (en) * 2004-03-25 2006-10-17 Nanosolar, Inc. Manufacturing of optoelectronic devices
US7125758B2 (en) * 2004-04-20 2006-10-24 Applied Materials, Inc. Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors
US20050233092A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Method of controlling the uniformity of PECVD-deposited thin films
US7622367B1 (en) * 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7158208B2 (en) * 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060011139A1 (en) * 2004-07-16 2006-01-19 Applied Materials, Inc. Heated substrate support for chemical vapor deposition
KR100721555B1 (en) * 2004-08-13 2007-05-23 삼성에스디아이 주식회사 Bottom gate thin film transistor and method fabricating thereof
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
US7622338B2 (en) * 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
US7382421B2 (en) * 2004-10-12 2008-06-03 Hewlett-Packard Development Company, L.P. Thin film transistor with a passivation layer
EP1812969B1 (en) * 2004-11-10 2015-05-06 Canon Kabushiki Kaisha Field effect transistor comprising an amorphous oxide
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7628896B2 (en) * 2005-07-05 2009-12-08 Guardian Industries Corp. Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same
US7829471B2 (en) * 2005-07-29 2010-11-09 Applied Materials, Inc. Cluster tool and method for process integration in manufacturing of a photomask
US20070030569A1 (en) * 2005-08-04 2007-02-08 Guardian Industries Corp. Broad band antireflection coating and method of making same
JP4968660B2 (en) * 2005-08-24 2012-07-04 スタンレー電気株式会社 Manufacturing method of ZnO-based compound semiconductor crystal and ZnO-based compound semiconductor substrate
EP1770788A3 (en) * 2005-09-29 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
US20070068571A1 (en) * 2005-09-29 2007-03-29 Terra Solar Global Shunt Passivation Method for Amorphous Silicon Thin Film Photovoltaic Modules
JP4946156B2 (en) * 2006-05-01 2012-06-06 富士ゼロックス株式会社 SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, LIGHT RECEIVING DEVICE USING THE SEMICONDUCTOR FILM, ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY, PROCESS CARTRIDGE
US20090023959A1 (en) * 2006-06-16 2009-01-22 D Amore Michael B Process for making dibutyl ethers from dry 1-butanol
KR101340514B1 (en) * 2007-01-24 2013-12-12 삼성디스플레이 주식회사 Thin film transistor substrate and method of fabricating the same
KR100851215B1 (en) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 Thin film transistor and organic light-emitting dislplay device having the thin film transistor
KR100982395B1 (en) * 2007-04-25 2010-09-14 주식회사 엘지화학 Thin film transistor and method for preparing the same
WO2008133345A1 (en) * 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
US7927713B2 (en) * 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
JP5215589B2 (en) * 2007-05-11 2013-06-19 キヤノン株式会社 Insulated gate transistor and display device
JP5241143B2 (en) * 2007-05-30 2013-07-17 キヤノン株式会社 Field effect transistor
US8372250B2 (en) * 2007-07-23 2013-02-12 National Science And Technology Development Agency Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering
KR101536101B1 (en) * 2007-08-02 2015-07-13 어플라이드 머티어리얼스, 인코포레이티드 Thin film transistors using thin film semiconductor materials
US20090212287A1 (en) * 2007-10-30 2009-08-27 Ignis Innovation Inc. Thin film transistor and method for forming the same
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
EP2184783B1 (en) * 2008-11-07 2012-10-03 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and method for manufacturing the same
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
TWI489628B (en) * 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
US20030207093A1 (en) * 2001-12-03 2003-11-06 Toshio Tsuji Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
US20040175511A1 (en) * 2002-12-31 2004-09-09 Klaus Hartig Coater having substrate cleaning device and coating deposition methods employing such coater

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