WO2007124129A3 - Enclosure tamper detection and protection - Google Patents

Enclosure tamper detection and protection Download PDF

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Publication number
WO2007124129A3
WO2007124129A3 PCT/US2007/009793 US2007009793W WO2007124129A3 WO 2007124129 A3 WO2007124129 A3 WO 2007124129A3 US 2007009793 W US2007009793 W US 2007009793W WO 2007124129 A3 WO2007124129 A3 WO 2007124129A3
Authority
WO
WIPO (PCT)
Prior art keywords
enclosure
memory storage
storage cell
magnetoresistive sensing
protection
Prior art date
Application number
PCT/US2007/009793
Other languages
French (fr)
Other versions
WO2007124129A2 (en
Inventor
James W Daughton
James G Deak
Original Assignee
Nve Corporataion
James W Daughton
James G Deak
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nve Corporataion, James W Daughton, James G Deak filed Critical Nve Corporataion
Priority to EP07755879.9A priority Critical patent/EP2016593B1/en
Publication of WO2007124129A2 publication Critical patent/WO2007124129A2/en
Publication of WO2007124129A3 publication Critical patent/WO2007124129A3/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165Auxiliary circuits
    • G11C11/1695Protection circuits or methods

Abstract

A tamper detecting enclosure arrangement for enclosures (10) containing an interior space (11) in which a protected item (14) is positioned having a magnetoresistive sensing memory storage cell (16) positioned in or near the protected item (14) in the enclosure (10) having a two state offset magnetoresistance versus externally applied magnetic field. A magnet (13) is positioned at a selected separation distance from the magnetoresistive sensing memory storage cell (16) to thereby provide a magnetic field about the magnetoresistive sensing memory storage cell (16) if said enclosure (10) has not been opened in such a manner as to result in substantially increasing said separation distance.
PCT/US2007/009793 2006-04-20 2007-04-20 Enclosure tamper detection and protection WO2007124129A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07755879.9A EP2016593B1 (en) 2006-04-20 2007-04-20 Enclosure tamper detection and protection

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79356906P 2006-04-20 2006-04-20
US60/793,569 2006-04-20

Publications (2)

Publication Number Publication Date
WO2007124129A2 WO2007124129A2 (en) 2007-11-01
WO2007124129A3 true WO2007124129A3 (en) 2009-04-09

Family

ID=38625655

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/009793 WO2007124129A2 (en) 2006-04-20 2007-04-20 Enclosure tamper detection and protection

Country Status (3)

Country Link
US (1) US7468664B2 (en)
EP (1) EP2016593B1 (en)
WO (1) WO2007124129A2 (en)

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CN1729539B (en) * 2002-12-18 2011-06-08 Nxp股份有限公司 Method and device for protection of an MRAM device against tampering
GB2412996B (en) * 2004-04-08 2008-11-12 Gore & Ass Tamper respondent covering
US20070279969A1 (en) * 2006-06-02 2007-12-06 Raytheon Company Intrusion detection apparatus and method
US7948378B2 (en) * 2008-10-06 2011-05-24 Toptech Systems, Inc. Tamperproof non-contact switch
US9041388B2 (en) * 2009-07-27 2015-05-26 Iii Holdings 3, Llc Non-contact current sensor
DK2585378T3 (en) * 2010-06-22 2019-11-11 Stora Enso Oyj FIBER OR PLASTIC BASKET, DEVICE, PROCEDURE, PROGRAM AND SYSTEM FOR WIRELESS DATA COMMUNICATION THROUGH FIBER OR PLASTIC BASKET
CN102226836A (en) * 2011-04-06 2011-10-26 江苏多维科技有限公司 Single-chip bridge magnetic field sensor and preparation method thereof
US8811072B2 (en) * 2012-03-13 2014-08-19 Honeywell International Inc. Magnetoresistive random access memory (MRAM) package including a multilayer magnetic security structure
US8854870B2 (en) 2012-03-13 2014-10-07 Honeywell International Inc. Magnetoresistive random access memory (MRAM) die including an integrated magnetic security structure
US8909942B1 (en) 2012-03-30 2014-12-09 Western Digital Technologies, Inc. MRAM-based security for data storage systems
US20140184411A1 (en) * 2012-12-31 2014-07-03 Alcatel Lucent Alarm condition processing in network element
CN106781144B (en) * 2015-11-11 2020-07-10 迈来芯科技有限公司 Magnetic sensor
EP3226018B1 (en) 2016-03-31 2018-11-07 Siemens Aktiengesellschaft Detection of an opening process of a covering device
EP3226017B1 (en) 2016-03-31 2018-10-24 Siemens Aktiengesellschaft Detection of an opening process of a covering device
US10489614B2 (en) 2017-09-26 2019-11-26 Hewlett Packard Enterprise Development Lp Tamper detecting cases
US11685580B2 (en) * 2019-08-07 2023-06-27 International Business Machines Corporation Medication counterfeit detection
FR3111737B1 (en) * 2020-06-19 2022-07-08 Commissariat Energie Atomique CHIP OR BOX-SYSTEM PROTECTION USING THE GMI EFFECT

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US6784796B2 (en) * 1999-12-17 2004-08-31 The Regents Of The University Of Califronia Magnetic vector field tag and seal

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US20010030839A1 (en) * 2000-01-13 2001-10-18 Lieping Zhong Dual spin-valve magnetoresistive sensor

Non-Patent Citations (1)

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Title
See also references of EP2016593A4 *

Also Published As

Publication number Publication date
WO2007124129A2 (en) 2007-11-01
US7468664B2 (en) 2008-12-23
EP2016593A4 (en) 2011-08-03
US20080042834A1 (en) 2008-02-21
EP2016593A2 (en) 2009-01-21
EP2016593B1 (en) 2014-11-05

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