WO2007131053B1 - Batch processing chamber with diffuser plate and injector assembly - Google Patents

Batch processing chamber with diffuser plate and injector assembly

Info

Publication number
WO2007131053B1
WO2007131053B1 PCT/US2007/068059 US2007068059W WO2007131053B1 WO 2007131053 B1 WO2007131053 B1 WO 2007131053B1 US 2007068059 W US2007068059 W US 2007068059W WO 2007131053 B1 WO2007131053 B1 WO 2007131053B1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
quartz
assembly
inject
inject assembly
Prior art date
Application number
PCT/US2007/068059
Other languages
French (fr)
Other versions
WO2007131053A2 (en
WO2007131053A3 (en
Inventor
Joseph Yudovsky
Tai T Ngo
Cesar Tejamo
Maitreyee Mahajani
Brendan Mcdougall
Yi-Chiau Huang
Robert C Cook
Yeong K Kim
Alexander Tam
Adam A Brailove
Steve G Ghanayem
Original Assignee
Applied Materials Inc
Joseph Yudovsky
Tai T Ngo
Cesar Tejamo
Maitreyee Mahajani
Brendan Mcdougall
Yi-Chiau Huang
Robert C Cook
Yeong K Kim
Alexander Tam
Adam A Brailove
Steve G Ghanayem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Joseph Yudovsky, Tai T Ngo, Cesar Tejamo, Maitreyee Mahajani, Brendan Mcdougall, Yi-Chiau Huang, Robert C Cook, Yeong K Kim, Alexander Tam, Adam A Brailove, Steve G Ghanayem filed Critical Applied Materials Inc
Priority to JP2009510058A priority Critical patent/JP5252457B2/en
Priority to EP07761764A priority patent/EP2032737A2/en
Priority to CN2007800162555A priority patent/CN101437979B/en
Publication of WO2007131053A2 publication Critical patent/WO2007131053A2/en
Publication of WO2007131053A3 publication Critical patent/WO2007131053A3/en
Publication of WO2007131053B1 publication Critical patent/WO2007131053B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Abstract

An apparatus (300) for batch processing of a wafer is disclosed. In one embodiment the batch processing apparatus includes a bell jar furnace having a diffuser disposed between gas inlets (326) and the substrate positioned within the furnace to direct flows within the chamber around the perimeter of the substrate (321).

Claims

AMENDED CLAIMS received by the International Bureau on 22 May 2008 (22.05.2008)
1. A batch processing chamber comprising: a quartz chamber configured to process a batch of substrates therein; an inject assembly attached to the quartz chamber for injecting a gas into said quartz chamber, the inject assembly removable from the quartz chamber; an exhaust assembly attached to the quartz chamber on a side of said chamber opposite to the inject assembly; and a d iff user plate disposed in said quartz chamber and blocking a direct gas flow path from said inject assembly to said exhaust assembly, the diffuser plate attached to the inject assembly and removable from the quartz chamber with the inject assembly.
2. The chamber as claimed in claim 1, wherein said inject assembly and said exhaust assembly are removable from the chamber.
3. The chamber as claimed in claim 1, wherein said chamber further comprises a quartz liner extending along a chamber wall between said inject assembly and said exhaust assembly, said quartz liner comprising an inner surface facing a substrate processing area and an outer surface facing said chamber wall.
4. The chamber as claimed 'in claim 3, wherein said diffuser plate extends from said inject assembly and overlaps said quartz liner, wherein a gap is defined between the diffuser plate and the quartz liner.
5. The chamber as claimed in claim 3, wherein said diffuser plate extends from said inject assembly into said chamber and aligns with said inner surface of said quartz liner, further comprising a gap between said diffuser plate and said quartz liner wherein said gap is about 4 mm.
39
6. The chamber as claimed in claim 3, wherein said diffuser plate comprises two sidewalls and a cap wherein holes are formed between said sidewalls and said cap, said sidewalls have parallel outer walls.
7. The chamber as claimed in claim 6, wherein said holes have a width of about 4 mm.
8. The chamber as claimed in claim 6, wherein said holes are angled relative to said outer walls.
9. A batch processing chamber comprising: a quartz chamber configured to process a batch of substrates therein; an inject assembly attached to the quartz chamber, the inject assembly removable from the quartz chamber, wherein said inject assembly comprises: a diffuser plate; a plurality of gas plenumsr, wherein a plurality of holes fluidly couple the plenums with said chamber* and at least one cooling channel defined between said plenums; and an exhaust assembly attached to the quartz chamber on a side of said chamber opposite to the inject assembly.
10. The chamber as claimed in claim 9, wherein the cooling channel is U- shaped and runs between all of the plenums.
11. The chamber as claimed in claim 9, further comprising a diffuser plate positioned to direct gases entering the chamber from the inject assembly.
12. A batch processing chamber comprising: a quartz chamber configured to process a batch of substrates therein; an inject assembly attached to the quartz chamber, the inject assembly removable from the quartz chamber, wherein said inject assembly comprises:
40 a diffuser plate; and a plurality of ports attached to a common carrier, said ports mate with a receiving surface of said chamber, wherein each said port comprises a plurality of holes through which gas passes into said chamber; and an exhaust assembly attached to the quartz chamber on a side of said chamber opposite to the inject assembly,
13. A batch processing chamber comprising: a quartz chamber configured to process a batch of substrates therein; an inject assembly attached to the quartz chamber, the inject assembly removable from the quartz chamber, and having a diffuser plate; and a plurality of vertically aligned ports that align with horizontal slots formed in said chamber; and an exhaust assembly attached to the quartz chamber on a side of said chamber opposite to the inject assembly.
14. A batch processing chamber comprising: a quartz chamber configured to process a batch of substrates therein; an inject assembly attached to the quartz chamber for injecting a gas into said chamber, the inject assembly removable from the quartz chamber, wherein said inject assembly comprises: a diffuser plate; a plurality of ports attached to a common carrier, said ports mate with a receiving surface of said chamber, wherein each said port comprises a plurality of holes through which gas passes into said chamber; a plurality of gas plenums within said carrier that feed gas to said ports; and a cooling channel disposed between said plenums; and
41 an exhaust assembly attached to the quartz chamber on a side of said chamber opposite to the inject assembly.
15. The chamber as claimed in claim 14, further comprising a diffuser plate creating diverging circumferential flow paths within said chamber between said inject assembly and said exhaust assembly.
PCT/US2007/068059 2006-05-05 2007-05-02 Batch processing chamber with diffuser plate and injector assembly WO2007131053A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009510058A JP5252457B2 (en) 2006-05-05 2007-05-02 Batch processing chamber with diffuser plate and spray assembly
EP07761764A EP2032737A2 (en) 2006-05-05 2007-05-02 Batch processing chamber with diffuser plate and injector assembly
CN2007800162555A CN101437979B (en) 2006-05-05 2007-05-02 Batch processing chamber with diffuser plate and injector assembly

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/381,966 US20070084408A1 (en) 2005-10-13 2006-05-05 Batch processing chamber with diffuser plate and injector assembly
US11/381,966 2006-05-05

Publications (3)

Publication Number Publication Date
WO2007131053A2 WO2007131053A2 (en) 2007-11-15
WO2007131053A3 WO2007131053A3 (en) 2008-07-03
WO2007131053B1 true WO2007131053B1 (en) 2008-08-21

Family

ID=38668520

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/068059 WO2007131053A2 (en) 2006-05-05 2007-05-02 Batch processing chamber with diffuser plate and injector assembly

Country Status (7)

Country Link
US (1) US20070084408A1 (en)
EP (1) EP2032737A2 (en)
JP (1) JP5252457B2 (en)
KR (1) KR20090010230A (en)
CN (1) CN101437979B (en)
TW (1) TWI524371B (en)
WO (1) WO2007131053A2 (en)

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Also Published As

Publication number Publication date
CN101437979B (en) 2012-01-18
WO2007131053A2 (en) 2007-11-15
TWI524371B (en) 2016-03-01
TW200805440A (en) 2008-01-16
WO2007131053A3 (en) 2008-07-03
KR20090010230A (en) 2009-01-29
EP2032737A2 (en) 2009-03-11
US20070084408A1 (en) 2007-04-19
JP5252457B2 (en) 2013-07-31
CN101437979A (en) 2009-05-20
JP2009536460A (en) 2009-10-08

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