WO2007142865A3 - Thin film photovoltaic structure and fabrication - Google Patents

Thin film photovoltaic structure and fabrication Download PDF

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Publication number
WO2007142865A3
WO2007142865A3 PCT/US2007/012422 US2007012422W WO2007142865A3 WO 2007142865 A3 WO2007142865 A3 WO 2007142865A3 US 2007012422 W US2007012422 W US 2007012422W WO 2007142865 A3 WO2007142865 A3 WO 2007142865A3
Authority
WO
WIPO (PCT)
Prior art keywords
fabrication
thin film
film photovoltaic
layer
photovoltaic structure
Prior art date
Application number
PCT/US2007/012422
Other languages
French (fr)
Other versions
WO2007142865A2 (en
Inventor
David F Dawson-Elli
Kishor P Gadkaree
Robin M Walton
Original Assignee
Corning Inc
David F Dawson-Elli
Kishor P Gadkaree
Robin M Walton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/511,040 external-priority patent/US20070277874A1/en
Priority claimed from US11/511,041 external-priority patent/US20070277875A1/en
Application filed by Corning Inc, David F Dawson-Elli, Kishor P Gadkaree, Robin M Walton filed Critical Corning Inc
Priority to JP2009513192A priority Critical patent/JP2009539255A/en
Priority to EP07809181A priority patent/EP2022097A2/en
Publication of WO2007142865A2 publication Critical patent/WO2007142865A2/en
Publication of WO2007142865A3 publication Critical patent/WO2007142865A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/02—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Novel photovoltaic structures comprising an insulator structure bonded to an exfoliation layer, preferably of a substantially single-crystal donor semiconductor wafer, and at least one photovoltaic device layer, such as a conductive layer, and systems and methods of production of a photovoltaic device, comprising creating on a donor semiconductor wafer an exfoliation layer and transferring the exfoliation layer to an insulator substrate.
PCT/US2007/012422 2006-05-31 2007-05-24 Thin film photovoltaic structure and fabrication WO2007142865A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009513192A JP2009539255A (en) 2006-05-31 2007-05-24 Thin film photovoltaic structure and manufacturing
EP07809181A EP2022097A2 (en) 2006-05-31 2007-05-24 Thin film photovoltaic structure and fabrication

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US81006106P 2006-05-31 2006-05-31
US60/810,061 2006-05-31
US11/511,041 2006-08-28
US11/511,040 2006-08-28
US11/511,040 US20070277874A1 (en) 2006-05-31 2006-08-28 Thin film photovoltaic structure
US11/511,041 US20070277875A1 (en) 2006-05-31 2006-08-28 Thin film photovoltaic structure

Publications (2)

Publication Number Publication Date
WO2007142865A2 WO2007142865A2 (en) 2007-12-13
WO2007142865A3 true WO2007142865A3 (en) 2008-05-08

Family

ID=38801981

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/012422 WO2007142865A2 (en) 2006-05-31 2007-05-24 Thin film photovoltaic structure and fabrication

Country Status (5)

Country Link
EP (1) EP2022097A2 (en)
JP (1) JP2009539255A (en)
KR (1) KR20090028581A (en)
TW (1) TW200814341A (en)
WO (1) WO2007142865A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
US7967936B2 (en) 2008-12-15 2011-06-28 Twin Creeks Technologies, Inc. Methods of transferring a lamina to a receiver element
SG174289A1 (en) * 2009-03-20 2011-10-28 Solar Implant Technologies Inc Advanced high efficiency crystalline solar cell fabrication method
US20100244108A1 (en) * 2009-03-31 2010-09-30 Glenn Eric Kohnke Cmos image sensor on a semiconductor-on-insulator substrate and process for making same
TW201119019A (en) * 2009-04-30 2011-06-01 Corning Inc CMOS image sensor on stacked semiconductor-on-insulator substrate and process for making same
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
EP2721647A2 (en) * 2011-06-15 2014-04-23 3M Innovative Properties Company Solar cell with improved conversion efficiency
CN104428883B (en) 2011-11-08 2017-02-22 因特瓦克公司 substrate processing system and method
WO2014100506A1 (en) 2012-12-19 2014-06-26 Intevac, Inc. Grid for plasma ion implant

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152535A (en) * 1976-07-06 1979-05-01 The Boeing Company Continuous process for fabricating solar cells and the product produced thereby
US5395481A (en) * 1993-10-18 1995-03-07 Regents Of The University Of California Method for forming silicon on a glass substrate
JPH114008A (en) * 1997-06-11 1999-01-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin film solar battery
EP0926709A2 (en) * 1997-12-26 1999-06-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
US6656271B2 (en) * 1998-12-04 2003-12-02 Canon Kabushiki Kaisha Method of manufacturing semiconductor wafer method of using and utilizing the same
US20040197949A1 (en) * 2003-02-28 2004-10-07 Shohei Hata Anodic bonding method and electronic device having anodic bonding structure
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures
US20060234477A1 (en) * 2005-04-13 2006-10-19 Gadkaree Kishor P Glass-based semiconductor on insulator structures and methods of making same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152535A (en) * 1976-07-06 1979-05-01 The Boeing Company Continuous process for fabricating solar cells and the product produced thereby
US5395481A (en) * 1993-10-18 1995-03-07 Regents Of The University Of California Method for forming silicon on a glass substrate
JPH114008A (en) * 1997-06-11 1999-01-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin film solar battery
EP0926709A2 (en) * 1997-12-26 1999-06-30 Canon Kabushiki Kaisha Method of manufacturing an SOI structure
US6656271B2 (en) * 1998-12-04 2003-12-02 Canon Kabushiki Kaisha Method of manufacturing semiconductor wafer method of using and utilizing the same
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures
US20040197949A1 (en) * 2003-02-28 2004-10-07 Shohei Hata Anodic bonding method and electronic device having anodic bonding structure
US20060234477A1 (en) * 2005-04-13 2006-10-19 Gadkaree Kishor P Glass-based semiconductor on insulator structures and methods of making same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEE T-H ET AL: "Semiconductor layer transfer by anodic wafer bonding", SOI CONFERENCE, 1997. PROCEEDINGS., 1997 IEEE INTERNATIONAL FISH CAMP, CA, USA 6-9 OCT. 1997, NEW YORK, NY, USA,IEEE, US, 6 October 1997 (1997-10-06), pages 40 - 41, XP010256194, ISBN: 0-7803-3938-X *
WHITE P A ET AL: "Direct glassing of silicon solar cells", CONFERENCE PROCEEDINGS ARTICLE, IEEE, 26 September 1988 (1988-09-26), pages 949 - 953, XP010750679 *

Also Published As

Publication number Publication date
KR20090028581A (en) 2009-03-18
JP2009539255A (en) 2009-11-12
TW200814341A (en) 2008-03-16
EP2022097A2 (en) 2009-02-11
WO2007142865A2 (en) 2007-12-13

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