WO2007143026A3 - Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials - Google Patents

Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials Download PDF

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Publication number
WO2007143026A3
WO2007143026A3 PCT/US2007/012832 US2007012832W WO2007143026A3 WO 2007143026 A3 WO2007143026 A3 WO 2007143026A3 US 2007012832 W US2007012832 W US 2007012832W WO 2007143026 A3 WO2007143026 A3 WO 2007143026A3
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Prior art keywords
dielectric constant
low dielectric
linked
constant materials
networks
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PCT/US2007/012832
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French (fr)
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WO2007143026A2 (en
Inventor
Michael Raymond Ayers
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Michael Raymond Ayers
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Publication of WO2007143026A2 publication Critical patent/WO2007143026A2/en
Publication of WO2007143026A3 publication Critical patent/WO2007143026A3/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/152—Fullerenes
    • C01B32/156—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Abstract

This disclosure relates generally to polymeric networks of fullerene compounds, to methods of preparing precursors for such networks, and to their subsequent use as low dielectric constant materials in microelectronic devices.
PCT/US2007/012832 2006-05-31 2007-05-31 Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials WO2007143026A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80934806P 2006-05-31 2006-05-31
US60/809,348 2006-05-31

Publications (2)

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WO2007143026A2 WO2007143026A2 (en) 2007-12-13
WO2007143026A3 true WO2007143026A3 (en) 2008-02-28

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PCT/US2007/012832 WO2007143026A2 (en) 2006-05-31 2007-05-31 Linked periodic networks of alternating carbon and inorganic clusters for use as low dielectric constant materials

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WO (1) WO2007143026A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7531209B2 (en) * 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength
US7825037B2 (en) * 2005-10-17 2010-11-02 Stc.Unm Fabrication of enclosed nanochannels using silica nanoparticles
US10060904B1 (en) 2005-10-17 2018-08-28 Stc.Unm Fabrication of enclosed nanochannels using silica nanoparticles
US9156004B2 (en) 2005-10-17 2015-10-13 Stc.Unm Fabrication of enclosed nanochannels using silica nanoparticles

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338571A (en) * 1993-02-10 1994-08-16 Northwestern University Method of forming self-assembled, mono- and multi-layer fullerene film and coated substrates produced thereby
US5386048A (en) * 1993-02-26 1995-01-31 Wisconsin Alumni Research Foundation Hydrosilylation of fullerenes
US5965202A (en) * 1996-05-02 1999-10-12 Lucent Technologies, Inc. Hybrid inorganic-organic composite for use as an interlayer dielectric
US6066272A (en) * 1996-10-07 2000-05-23 The Hong Kong University Of Science & Technology Fullerene-containing optical materials with novel light transmission characteristics
US6277766B1 (en) * 2000-02-03 2001-08-21 Michael Raymond Ayers Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices
US20040185448A1 (en) * 2003-03-20 2004-09-23 Viorica Lopez-Avila Methods and devices for performing matrix assisted laser desorption/lonization protocols

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4002800A (en) 1972-12-01 1977-01-11 Dynamit Nobel Aktiengesellschaft Impregnation of masonry having a neutrally or acidly reaction surface
US4652467A (en) 1985-02-25 1987-03-24 The United States Of America As Represented By The United States Department Of Energy Inorganic-polymer-derived dielectric films
JPH01235254A (en) 1988-03-15 1989-09-20 Nec Corp Semiconductor device and manufacture thereof
US4987101A (en) 1988-12-16 1991-01-22 International Business Machines Corporation Method for providing improved insulation in VLSI and ULSI circuits
EP0395957B1 (en) * 1989-04-21 1995-07-05 Idemitsu Kosan Company Limited Method of producing a substrate coated with a film of liquid crystal material and method and apparatus of producing a liquid crystal optical device
US5470820A (en) 1991-05-06 1995-11-28 Hauser Chemical Research, Inc. Electroplating of superconductor elements
US5177248A (en) 1991-10-28 1993-01-05 Exxon Research And Engineering Company Process of forming polysubstituted fullerenes
JPH05254955A (en) 1992-03-10 1993-10-05 Oki Electric Ind Co Ltd Production of porous pzt ceramic
US5308481A (en) 1992-06-02 1994-05-03 Analytical Bio-Chemistry Laboratories, Inc. Chemically bound fullerenes to resin and silica supports and their use as stationary phases for chromatography
US5364993A (en) * 1993-01-21 1994-11-15 Inrad, Inc. Selective functionalization of fullerenes
DE4313481A1 (en) 1993-04-24 1994-10-27 Hoechst Ag Fullerene derivatives, process for their preparation and their use
EP0647606B1 (en) 1993-10-12 1997-03-26 Hoechst Aktiengesellschaft Derivatives of fullerene, process for their preparation and their use
JPH06324681A (en) 1993-10-12 1994-11-25 Roland Corp Musical sound generating device of electronic musical instrument
US5811460A (en) 1994-01-24 1998-09-22 The Regents Of The University Of California Water soluble fullerenes with antiviral activity
US5494859A (en) 1994-02-04 1996-02-27 Lsi Logic Corporation Low dielectric constant insulation layer for integrated circuit structure and method of making same
US5420081A (en) 1994-03-31 1995-05-30 The Regents Of The University Of California Office Of Technology Transfer Preparation of fullerene/glass composites
JPH08181133A (en) 1994-12-27 1996-07-12 Sony Corp Dielectric material and manufacture of dielectric film
JPH08245209A (en) 1995-03-07 1996-09-24 Nippon Kayaku Co Ltd Fullerene carrying laminar porous body
US5679861A (en) * 1995-06-07 1997-10-21 Industrial Technology Research Institute C60 diamine adducts and preparation and polymers thereof
US5744399A (en) 1995-11-13 1998-04-28 Lsi Logic Corporation Process for forming low dielectric constant layers using fullerenes
US5698140A (en) 1996-05-02 1997-12-16 The Arizona Board Of Regents, On Behalf Of The University Of Arizona Aerogel/fullerene hybrid materials for energy storage applications
JP3985277B2 (en) 1996-05-28 2007-10-03 住友電気工業株式会社 Silicon-based polymer and method for producing the same
JP3563206B2 (en) 1996-06-13 2004-09-08 株式会社石川製作所 Novel fullerene compound and method for producing and using same
WO1998007793A1 (en) 1996-08-16 1998-02-26 Fmc Corporation Hybrid inorganic-organic environmental resistant protective compositions
JP3447492B2 (en) 1996-11-12 2003-09-16 日本電気株式会社 Carbon material and its manufacturing method
ATE299474T1 (en) 1997-03-07 2005-07-15 Univ Rice William M CARBON FIBERS FROM SINGLE-WALLED CARBON NANOTUBE
JPH10310709A (en) 1997-05-14 1998-11-24 Polyplastics Co Crystalline thermoplastic resin composition and its production
US5801092A (en) 1997-09-04 1998-09-01 Ayers; Michael R. Method of making two-component nanospheres and their use as a low dielectric constant material for semiconductor devices
JPH11263916A (en) 1998-03-17 1999-09-28 Fujitsu Ltd Low dielectric constant insulating material for wiring circuit and electronic parts using the same
US6113673A (en) 1998-09-16 2000-09-05 Materials And Electrochemical Research (Mer) Corporation Gas storage using fullerene based adsorbents
US6531513B2 (en) 1998-10-02 2003-03-11 University Of Kentucky Research Foundation Method of solubilizing carbon nanotubes in organic solutions
US6368569B1 (en) 1998-10-02 2002-04-09 University Of Kentucky Research Foundation Method of solubilizing unshortened carbon nanotubes in organic solutions
JP3765046B2 (en) 1998-11-20 2006-04-12 独立行政法人科学技術振興機構 Photobissilylation of unsaturated compounds using fullerenes as photosensitizers, organosilicon compounds obtained by the reactions
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
JP3007973B1 (en) 1999-03-18 2000-02-14 東京大学長 Method for producing fullerene-dispersed ceramics
JP3531520B2 (en) 1999-03-19 2004-05-31 富士通株式会社 Insulating film, method of manufacturing the same, and electronic device
US6214746B1 (en) 1999-05-07 2001-04-10 Honeywell International Inc. Nanoporous material fabricated using a dissolvable reagent
CA2312140A1 (en) 1999-06-25 2000-12-25 Matthias Ramm Charge separation type heterojunction structure and manufacturing method therefor
AUPQ326499A0 (en) 1999-10-05 1999-10-28 Commonwealth Scientific And Industrial Research Organisation Nanoparticle films
US6342454B1 (en) * 1999-11-16 2002-01-29 International Business Machines Corporation Electronic devices with dielectric compositions and method for their manufacture
JP4162823B2 (en) 2000-01-07 2008-10-08 花王株式会社 Hair cosmetics
US6509415B1 (en) 2000-04-07 2003-01-21 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
US6797777B2 (en) 2000-04-07 2004-09-28 Honeywell International Inc. Low dielectric constant organic dielectrics based on cage-like structures
US6287979B1 (en) 2000-04-17 2001-09-11 Chartered Semiconductor Manufacturing Ltd. Method for forming an air gap as low dielectric constant material using buckminsterfullerene as a porogen in an air bridge or a sacrificial layer
US6495479B1 (en) * 2000-05-05 2002-12-17 Honeywell International, Inc. Simplified method to produce nanoporous silicon-based films
US6743481B2 (en) 2000-06-01 2004-06-01 Seagate Technology Llc Process for production of ultrathin protective overcoats
JP2002006478A (en) 2000-06-23 2002-01-09 Hitachi Ltd Mask for exposure and method for producing the same
US7049386B2 (en) 2000-07-19 2006-05-23 Honeywell International Inc. Compositions and methods for thermosetting molecules in organic compositions
US6423811B1 (en) 2000-07-19 2002-07-23 Honeywell International Inc. Low dielectric constant materials with polymeric networks
US6380270B1 (en) 2000-09-26 2002-04-30 Honeywell International Inc. Photogenerated nanoporous materials
JP2002105623A (en) 2000-09-27 2002-04-10 Kobe Steel Ltd Carbon onion thin film and manufacturing method
SI20688A (en) 2000-10-10 2002-04-30 Institut "Jo�Ef Stefan" Process of synthesis of nanotubes of transition metals dichalcogenides
DE10051910A1 (en) 2000-10-19 2002-05-02 Membrana Mundi Gmbh Flexible, porous membranes and adsorbents, and processes for their manufacture
US7192645B2 (en) 2001-02-26 2007-03-20 Dielectric Systems, Inc. Porous low E (<2.0) thin films by transport co-polymerization
US6621970B2 (en) * 2001-03-28 2003-09-16 Alcatel UV-curable optical fiber coating composition including fullerenes
WO2002081546A1 (en) 2001-04-06 2002-10-17 Honeywell International Inc. Low dielectric constant materials and methods of preparation thereof
JP2003131001A (en) 2001-05-25 2003-05-08 Shipley Co Llc Porous optical materials
US6740685B2 (en) 2001-05-30 2004-05-25 Honeywell International Inc. Organic compositions
US7141188B2 (en) 2001-05-30 2006-11-28 Honeywell International Inc. Organic compositions
JP2003043682A (en) 2001-08-01 2003-02-13 Jsr Corp Radiation sensitive composition with variable dielectric constant and method for varying dielectric constant
AUPR725701A0 (en) 2001-08-24 2001-09-20 Commonwealth Scientific And Industrial Research Organisation Functionalised nanoparticle concentrates
US7666661B2 (en) 2001-08-27 2010-02-23 Platypus Technologies, Llc Substrates, devices, and methods for quantitative liquid crystal assays
US6987147B2 (en) 2001-10-01 2006-01-17 Honeywell International Inc. Low dielectric constant materials with improved thermo-mechanical strength and processability
US8062702B2 (en) 2001-11-20 2011-11-22 William Marsh Rice University Coated fullerenes, composites and dielectrics made therefrom
US20040102584A1 (en) 2001-12-03 2004-05-27 Lau Kreisler S. Low dielectric constant materials with polymeric networks
JP3436932B2 (en) 2001-12-12 2003-08-18 理化学研究所 Fullerene polymer, fullerene polymer structure, and method for producing the same
WO2003057749A1 (en) 2001-12-31 2003-07-17 Honeywell International Inc. Organic compositions
KR20040104454A (en) 2002-01-15 2004-12-10 허니웰 인터내셔널 인코포레이티드 Organic Compositions
JP2003280249A (en) 2002-03-20 2003-10-02 Ricoh Co Ltd Electrophotographic toner
US7060204B2 (en) 2002-04-29 2006-06-13 Honeywell International Inc. Organic compositions
JP2003321214A (en) 2002-05-07 2003-11-11 Japan Science & Technology Corp Two-dimensional polymer thin film of fullerenes and method for manufacturing the same
JP3859540B2 (en) 2002-05-14 2006-12-20 松下電器産業株式会社 Low dielectric constant insulating film forming material
US6998178B2 (en) 2002-05-30 2006-02-14 Honeywell International Inc. Organic compositions
US6852410B2 (en) 2002-07-01 2005-02-08 Georgia Tech Research Corporation Macroscopic fiber comprising single-wall carbon nanotubes and acrylonitrile-based polymer and process for making the same
US7771609B2 (en) 2002-08-16 2010-08-10 Aerogel Technologies, Llc Methods and compositions for preparing silica aerogels
TWI242645B (en) * 2002-10-15 2005-11-01 Ind Tech Res Inst Biochemical labeling materials and manufacturing method
US6790790B1 (en) 2002-11-22 2004-09-14 Advanced Micro Devices, Inc. High modulus filler for low k materials
JP2004182771A (en) 2002-11-29 2004-07-02 Mitsubishi Chemicals Corp Resin composition and method for producing the same
US20040121501A1 (en) 2002-12-18 2004-06-24 Large Jeffrey L. Low dielectric constant interconnect insulator having fullerene additive
AU2003300056A1 (en) 2002-12-30 2005-02-14 Honeywell International Inc Organic compositions
US7011890B2 (en) 2003-03-03 2006-03-14 Applied Materials Inc. Modulated/composited CVD low-k films with improved mechanical and electrical properties for nanoelectronic devices
US20040175568A1 (en) 2003-03-03 2004-09-09 Ecodevice Laboratory Co., Ltd. Fullerodendrimer-comprising film
EP1638746B1 (en) 2003-06-16 2013-05-08 William Marsh Rice University Fabrication of carbon nanotube reinforced epoxy polymer composites using functionalized carbon nanotubes
US20050238889A1 (en) 2003-07-10 2005-10-27 Nancy Iwamoto Layered components, materials, methods of production and uses thereof
JP4257181B2 (en) 2003-09-30 2009-04-22 東邦テナックス株式会社 Fullerene-containing prepreg
JP2005119167A (en) 2003-10-17 2005-05-12 Toppan Printing Co Ltd Decorative material
JP4346417B2 (en) 2003-11-14 2009-10-21 直幸 佐藤 Method for forming ultra fine pattern concave structure
US20050119360A1 (en) 2003-11-28 2005-06-02 Kabushiki Kaisha Kobe Seiko Sho Method for producing porous material
JP4408048B2 (en) 2004-03-16 2010-02-03 日本板硝子株式会社 Porous carbon material and method for producing the same
JP2005268550A (en) 2004-03-18 2005-09-29 Japan Science & Technology Agency Organic semiconductor, semiconductor device using the same, and method of manufacturing the same
JP4326382B2 (en) 2004-03-24 2009-09-02 ビタミンＣ６０バイオリサーチ株式会社 PVP / fullerene complex and method for producing aqueous solution thereof
JP2005289755A (en) 2004-04-01 2005-10-20 Kyoto Univ Method of manufacturing atom- or molecule-including fullerene and including fullerene obtained by the manufacturing method
JP2005290316A (en) 2004-04-05 2005-10-20 Mitsubishi Chemicals Corp Method for producing fullerene-containing resin particle and the resultant fullerene-containing resin particle
US7329709B2 (en) 2004-06-02 2008-02-12 Konarka Technologies, Inc. Photoactive materials and related compounds, devices, and methods
DE102004032120A1 (en) 2004-07-01 2006-02-09 Merck Patent Gmbh Diffractive colorants for cosmetics
US20060024502A1 (en) 2004-07-30 2006-02-02 Mcfarland Eric W Electrodeposition of C60 thin films
US8039681B2 (en) 2004-08-20 2011-10-18 E. I. Du Pont De Nemours And Company Functionalized carbon materials
US20060093885A1 (en) 2004-08-20 2006-05-04 Krusic Paul J Compositions containing functionalized carbon materials
WO2006028776A1 (en) 2004-09-02 2006-03-16 C Sixty Inc. Method of synthesis of water soluble fullerene polyacids using a malonate reactant
US20060071300A1 (en) 2004-09-30 2006-04-06 Haverty Michael G Dielectric material having carborane derivatives
DK1652877T3 (en) 2004-10-27 2012-04-02 Sgl Carbon Se Abrasion resistant slip material which includes graphite and a resin binder
DE602005010747D1 (en) * 2005-01-13 2008-12-11 Cinv Ag CARBON NANOPARTICLES CONTAINING COMPOSITE MATERIALS
KR20060090483A (en) * 2005-02-07 2006-08-11 삼성코닝 주식회사 Composition for forming low dieletric film comprising fullerenes, low dielectric film using the composition and method for forming the low dielectric film
US7531209B2 (en) * 2005-02-24 2009-05-12 Michael Raymond Ayers Porous films and bodies with enhanced mechanical strength

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5338571A (en) * 1993-02-10 1994-08-16 Northwestern University Method of forming self-assembled, mono- and multi-layer fullerene film and coated substrates produced thereby
US5386048A (en) * 1993-02-26 1995-01-31 Wisconsin Alumni Research Foundation Hydrosilylation of fullerenes
US5965202A (en) * 1996-05-02 1999-10-12 Lucent Technologies, Inc. Hybrid inorganic-organic composite for use as an interlayer dielectric
US6066272A (en) * 1996-10-07 2000-05-23 The Hong Kong University Of Science & Technology Fullerene-containing optical materials with novel light transmission characteristics
US6277766B1 (en) * 2000-02-03 2001-08-21 Michael Raymond Ayers Method of making fullerene-decorated nanoparticles and their use as a low dielectric constant material for semiconductor devices
US20040185448A1 (en) * 2003-03-20 2004-09-23 Viorica Lopez-Avila Methods and devices for performing matrix assisted laser desorption/lonization protocols

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