WO2007146709A3 - Adapted led device with re-emitting semiconductor construction - Google Patents

Adapted led device with re-emitting semiconductor construction Download PDF

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Publication number
WO2007146709A3
WO2007146709A3 PCT/US2007/070533 US2007070533W WO2007146709A3 WO 2007146709 A3 WO2007146709 A3 WO 2007146709A3 US 2007070533 W US2007070533 W US 2007070533W WO 2007146709 A3 WO2007146709 A3 WO 2007146709A3
Authority
WO
WIPO (PCT)
Prior art keywords
led device
emitting semiconductor
semiconductor construction
adapted led
led
Prior art date
Application number
PCT/US2007/070533
Other languages
French (fr)
Other versions
WO2007146709A2 (en
Inventor
Michael A Haase
Thomas J Miller
Andrew J Ouderkirk
Catherine A Leatherdale
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Priority to JP2009515571A priority Critical patent/JP2009540614A/en
Priority to EP07812041A priority patent/EP2038941A2/en
Priority to CN2007800222560A priority patent/CN101467279B/en
Publication of WO2007146709A2 publication Critical patent/WO2007146709A2/en
Publication of WO2007146709A3 publication Critical patent/WO2007146709A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials

Abstract

An article includes an LED that has an emitting surface. A reemitting semiconductor structure has an emitting surface and converts light emitted by the LED to light of a different wavelength. At least one of the emitting surfaces frustrates total internal reflection.
PCT/US2007/070533 2006-06-14 2007-06-06 Adapted led device with re-emitting semiconductor construction WO2007146709A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009515571A JP2009540614A (en) 2006-06-14 2007-06-06 Adaptive LED device having a re-emitting semiconductor construction
EP07812041A EP2038941A2 (en) 2006-06-14 2007-06-06 Adapted led device with re-emitting semiconductor construction
CN2007800222560A CN101467279B (en) 2006-06-14 2007-06-06 Adapted led device with re-emitting semiconductor construction

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80480006P 2006-06-14 2006-06-14
US60/804,800 2006-06-14
US11/755,010 US7902542B2 (en) 2006-06-14 2007-05-30 Adapted LED device with re-emitting semiconductor construction
US11/755,010 2007-05-30

Publications (2)

Publication Number Publication Date
WO2007146709A2 WO2007146709A2 (en) 2007-12-21
WO2007146709A3 true WO2007146709A3 (en) 2008-02-28

Family

ID=38832675

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/070533 WO2007146709A2 (en) 2006-06-14 2007-06-06 Adapted led device with re-emitting semiconductor construction

Country Status (7)

Country Link
US (1) US7902542B2 (en)
EP (1) EP2038941A2 (en)
JP (1) JP2009540614A (en)
KR (1) KR20090015966A (en)
CN (1) CN101467279B (en)
TW (1) TW200812118A (en)
WO (1) WO2007146709A2 (en)

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US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
US7952110B2 (en) * 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
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KR20120016262A (en) 2009-05-05 2012-02-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Re-emitting semiconductor construction with enhanced extraction efficiency
JP2012526394A (en) 2009-05-05 2012-10-25 スリーエム イノベイティブ プロパティズ カンパニー Re-emitting semiconductor carrier element for use with LED and method of manufacture
KR20120055540A (en) 2009-06-30 2012-05-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Electroluminescent devices with color adjustment based on current crowding
KR20120092549A (en) 2009-06-30 2012-08-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 White light electroluminescent devices with adjustable color temperature
KR20120094463A (en) 2009-06-30 2012-08-24 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Cadmium-free re-emitting semiconductor construction
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Also Published As

Publication number Publication date
CN101467279B (en) 2012-05-23
TW200812118A (en) 2008-03-01
WO2007146709A2 (en) 2007-12-21
JP2009540614A (en) 2009-11-19
EP2038941A2 (en) 2009-03-25
CN101467279A (en) 2009-06-24
US20070290190A1 (en) 2007-12-20
KR20090015966A (en) 2009-02-12
US7902542B2 (en) 2011-03-08

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