WO2008010205A3 - Thin-film photovoltaic conversion device and method of manufacturing the same - Google Patents

Thin-film photovoltaic conversion device and method of manufacturing the same Download PDF

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Publication number
WO2008010205A3
WO2008010205A3 PCT/IL2007/000847 IL2007000847W WO2008010205A3 WO 2008010205 A3 WO2008010205 A3 WO 2008010205A3 IL 2007000847 W IL2007000847 W IL 2007000847W WO 2008010205 A3 WO2008010205 A3 WO 2008010205A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin
conversion device
film photovoltaic
photovoltaic conversion
manufacturing
Prior art date
Application number
PCT/IL2007/000847
Other languages
French (fr)
Other versions
WO2008010205A2 (en
Inventor
Boris Sigalov
Original Assignee
Solaroll Ltd
Boris Sigalov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solaroll Ltd, Boris Sigalov filed Critical Solaroll Ltd
Publication of WO2008010205A2 publication Critical patent/WO2008010205A2/en
Publication of WO2008010205A3 publication Critical patent/WO2008010205A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A thin-film photovoltaic conversion device, formed on a substrate, preferably made of a flexible plastic, having first and second conductive layers as electrodes, n-type and p-type layers, graded (varizone) band gap layer including pure silicon and silicon in chemical compositions selected from a group, consisting of SixGe1-x, SixCy, SixNy and SixOyNz, all these chemical compositions being simultaneously comprised in graded band gap layer and smoothly changing from one to the other. The photovoltaic device additionally comprises reflective layer, an anti-reflective layer and a protective laminating layer. The device is manufactured on the basis of at least one vacuum chamber according to two embodiments of proposed method.
PCT/IL2007/000847 2006-07-16 2007-07-08 Thin-film photovoltaic conversion device and method of manufacturing the same WO2008010205A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL176885A IL176885A0 (en) 2006-07-16 2006-07-16 A thin-film photovoltaic conversion device and method of manufacturing the same
IL176885 2006-07-16

Publications (2)

Publication Number Publication Date
WO2008010205A2 WO2008010205A2 (en) 2008-01-24
WO2008010205A3 true WO2008010205A3 (en) 2009-05-07

Family

ID=38957187

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2007/000847 WO2008010205A2 (en) 2006-07-16 2007-07-08 Thin-film photovoltaic conversion device and method of manufacturing the same

Country Status (2)

Country Link
IL (1) IL176885A0 (en)
WO (1) WO2008010205A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2161758A1 (en) 2008-09-05 2010-03-10 Flexucell ApS Solar cell and method for the production thereof
CN102593253B (en) * 2012-02-23 2015-05-06 上海中智光纤通讯有限公司 Method for preparing heterogeneous crystal silicon solar battery passivation layer
FR2994507B1 (en) * 2012-08-10 2014-08-29 Commissariat Energie Atomique ABSORBER MATERIAL BASED ON CU2ZNSN (S, SE) 4 A BAND SEPARATION GRADIENT FOR THIN FILM PHOTOVOLTAIC APPLICATIONS

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
US5114498A (en) * 1989-03-31 1992-05-19 Sanyo Electric Co., Ltd. Photovoltaic device
US5759291A (en) * 1995-06-28 1998-06-02 Canon Kabushiki Kaisha Photovoltaic cell and method of making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
US5114498A (en) * 1989-03-31 1992-05-19 Sanyo Electric Co., Ltd. Photovoltaic device
US5759291A (en) * 1995-06-28 1998-06-02 Canon Kabushiki Kaisha Photovoltaic cell and method of making the same

Also Published As

Publication number Publication date
IL176885A0 (en) 2006-10-31
WO2008010205A2 (en) 2008-01-24

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