WO2008010893A3 - Method, apparatus and system for charge injection suppression in active pixel sensors - Google Patents

Method, apparatus and system for charge injection suppression in active pixel sensors Download PDF

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Publication number
WO2008010893A3
WO2008010893A3 PCT/US2007/014730 US2007014730W WO2008010893A3 WO 2008010893 A3 WO2008010893 A3 WO 2008010893A3 US 2007014730 W US2007014730 W US 2007014730W WO 2008010893 A3 WO2008010893 A3 WO 2008010893A3
Authority
WO
WIPO (PCT)
Prior art keywords
storage node
charge injection
active pixel
pixel sensors
voltage
Prior art date
Application number
PCT/US2007/014730
Other languages
French (fr)
Other versions
WO2008010893A2 (en
Inventor
Peter Parker Altice
Chen Xu
John Ladd
Xiangli Li
Original Assignee
Micron Technology Inc
Peter Parker Altice
Chen Xu
John Ladd
Xiangli Li
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Peter Parker Altice, Chen Xu, John Ladd, Xiangli Li filed Critical Micron Technology Inc
Publication of WO2008010893A2 publication Critical patent/WO2008010893A2/en
Publication of WO2008010893A3 publication Critical patent/WO2008010893A3/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Abstract

A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage VRST_LOW greater than ground, but less than a maximum voltage which can be stored at the storage node.
PCT/US2007/014730 2006-07-18 2007-06-26 Method, apparatus and system for charge injection suppression in active pixel sensors WO2008010893A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/488,110 2006-07-18
US11/488,110 US7619671B2 (en) 2006-07-18 2006-07-18 Method, apparatus and system for charge injection suppression in active pixel sensors

Publications (2)

Publication Number Publication Date
WO2008010893A2 WO2008010893A2 (en) 2008-01-24
WO2008010893A3 true WO2008010893A3 (en) 2008-06-05

Family

ID=38957257

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/014730 WO2008010893A2 (en) 2006-07-18 2007-06-26 Method, apparatus and system for charge injection suppression in active pixel sensors

Country Status (3)

Country Link
US (1) US7619671B2 (en)
TW (1) TW200814759A (en)
WO (1) WO2008010893A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8063940B2 (en) * 2004-05-10 2011-11-22 Hewlett-Packard Development Company, L.P. Image-stabilization systems and methods
JP5022923B2 (en) * 2008-01-23 2012-09-12 富士フイルム株式会社 Imaging device and method for correcting captured image signal thereof
US8724002B2 (en) 2011-02-28 2014-05-13 Aptina Imaging Corporation Imaging pixels with dummy transistors that reduce reset charge injection
JP6108280B2 (en) * 2012-06-27 2017-04-05 パナソニックＩｐマネジメント株式会社 Solid-state imaging device
KR102307376B1 (en) * 2015-06-09 2021-10-06 에스케이하이닉스 주식회사 Image sensing device and read-out method of the same
CA3047698C (en) * 2016-12-19 2020-03-24 BAE Systems Imaging Solutions Inc. Global shutter scheme that reduces the effects of dark current

Citations (7)

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Publication number Priority date Publication date Assignee Title
US4434441A (en) * 1980-11-27 1984-02-28 Fujitsu Limited Method for driving a charge injection device
US5900623A (en) * 1997-08-11 1999-05-04 Chrontel, Inc. Active pixel sensor using CMOS technology with reverse biased photodiodes
US20020196352A1 (en) * 2001-05-21 2002-12-26 Christian Boemler Compensation of pixel source follower variations in CMOS imager
US6522395B1 (en) * 1999-04-30 2003-02-18 Canesta, Inc. Noise reduction techniques suitable for three-dimensional information acquirable with CMOS-compatible image sensor ICS
US6535247B1 (en) * 1998-05-19 2003-03-18 Pictos Technologies, Inc. Active pixel sensor with capacitorless correlated double sampling
US20030128405A1 (en) * 2002-01-05 2003-07-10 Tay Hiok Nam Image sensor with interleaved image output
US6635857B1 (en) * 2000-07-10 2003-10-21 National Semiconductor Corporation Method and apparatus for a pixel cell architecture having high sensitivity, low lag and electronic shutter

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US6493030B1 (en) * 1998-04-08 2002-12-10 Pictos Technologies, Inc. Low-noise active pixel sensor for imaging arrays with global reset
US6697111B1 (en) * 1998-04-08 2004-02-24 Ess Technology, Inc. Compact low-noise active pixel sensor with progressive row reset
JP4200545B2 (en) * 1998-06-08 2008-12-24 ソニー株式会社 Solid-state imaging device, driving method thereof, and camera system
US6140630A (en) * 1998-10-14 2000-10-31 Micron Technology, Inc. Vcc pump for CMOS imagers
US6376868B1 (en) * 1999-06-15 2002-04-23 Micron Technology, Inc. Multi-layered gate for a CMOS imager
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6326652B1 (en) * 1999-06-18 2001-12-04 Micron Technology, Inc., CMOS imager with a self-aligned buried contact
US6204524B1 (en) * 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
US6333205B1 (en) * 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
US6903394B2 (en) * 2002-11-27 2005-06-07 Micron Technology, Inc. CMOS imager with improved color response
ATE428266T1 (en) * 2003-01-08 2009-04-15 Cypress Semiconductor Corp ACTIVE CMOS PIXEL WITH HARD AND SOFT RESET
JP4161855B2 (en) * 2003-09-10 2008-10-08 ソニー株式会社 Solid-state imaging device, drive control method, and drive control device
US7459667B1 (en) * 2004-09-07 2008-12-02 Sensata Technologies, Inc. Active pixel image sensor with common gate amplifier mode

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4434441A (en) * 1980-11-27 1984-02-28 Fujitsu Limited Method for driving a charge injection device
US5900623A (en) * 1997-08-11 1999-05-04 Chrontel, Inc. Active pixel sensor using CMOS technology with reverse biased photodiodes
US6535247B1 (en) * 1998-05-19 2003-03-18 Pictos Technologies, Inc. Active pixel sensor with capacitorless correlated double sampling
US6522395B1 (en) * 1999-04-30 2003-02-18 Canesta, Inc. Noise reduction techniques suitable for three-dimensional information acquirable with CMOS-compatible image sensor ICS
US6635857B1 (en) * 2000-07-10 2003-10-21 National Semiconductor Corporation Method and apparatus for a pixel cell architecture having high sensitivity, low lag and electronic shutter
US20020196352A1 (en) * 2001-05-21 2002-12-26 Christian Boemler Compensation of pixel source follower variations in CMOS imager
US20030128405A1 (en) * 2002-01-05 2003-07-10 Tay Hiok Nam Image sensor with interleaved image output

Also Published As

Publication number Publication date
WO2008010893A2 (en) 2008-01-24
TW200814759A (en) 2008-03-16
US7619671B2 (en) 2009-11-17
US20080018762A1 (en) 2008-01-24

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