WO2008011152A3 - Longwave infrared photodetector - Google Patents

Longwave infrared photodetector Download PDF

Info

Publication number
WO2008011152A3
WO2008011152A3 PCT/US2007/016466 US2007016466W WO2008011152A3 WO 2008011152 A3 WO2008011152 A3 WO 2008011152A3 US 2007016466 W US2007016466 W US 2007016466W WO 2008011152 A3 WO2008011152 A3 WO 2008011152A3
Authority
WO
WIPO (PCT)
Prior art keywords
infrared photodetector
longwave infrared
infrared detector
longwave
heterostructure
Prior art date
Application number
PCT/US2007/016466
Other languages
French (fr)
Other versions
WO2008011152A2 (en
WO2008011152A9 (en
Inventor
Xuejun Lu
Original Assignee
Univ Massachusetts
Xuejun Lu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Massachusetts, Xuejun Lu filed Critical Univ Massachusetts
Publication of WO2008011152A2 publication Critical patent/WO2008011152A2/en
Publication of WO2008011152A9 publication Critical patent/WO2008011152A9/en
Publication of WO2008011152A3 publication Critical patent/WO2008011152A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

An infrared detector in which a quantum dot (20) heterostructure is located within a resonant cavity (12, 24) that has a two photon absorption characteristic. This provides a long wavelength infrared detector that is thermoelectrically cooled.
PCT/US2007/016466 2006-07-21 2007-07-20 Longwave infrared photodetector WO2008011152A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US83230306P 2006-07-21 2006-07-21
US60/832,303 2006-07-21

Publications (3)

Publication Number Publication Date
WO2008011152A2 WO2008011152A2 (en) 2008-01-24
WO2008011152A9 WO2008011152A9 (en) 2008-03-13
WO2008011152A3 true WO2008011152A3 (en) 2008-04-24

Family

ID=38957400

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/016466 WO2008011152A2 (en) 2006-07-21 2007-07-20 Longwave infrared photodetector

Country Status (1)

Country Link
WO (1) WO2008011152A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103235251B (en) * 2013-04-12 2015-05-27 中国科学技术大学 Semiconductor quantum dot low-noise measuring system at extremely low temperature
US9520514B2 (en) * 2013-06-11 2016-12-13 National Taiwan University Quantum dot infrared photodetector
US9614112B2 (en) 2013-09-11 2017-04-04 The University Of Connecticut Imaging cell array integrated circuit
US10243089B2 (en) 2014-06-19 2019-03-26 Raytheon Company Photovoltaic device for generating electrical power using nonlinear multi-photon absorption of incoherent radiation
WO2017091269A2 (en) * 2015-08-31 2017-06-01 The Board Of Regents Of The University Of Oklahoma Semiconductor devices having matrix-embedded nano-structured materials

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011104A (en) * 1973-10-05 1977-03-08 Hughes Aircraft Company Thermoelectric system
US5404013A (en) * 1993-02-25 1995-04-04 Fujitsu Limited Infrared imaging system having an automatic focusing control
US6407439B1 (en) * 1999-08-19 2002-06-18 Epitaxial Technologies, Llc Programmable multi-wavelength detector array
US6444897B1 (en) * 1999-06-09 2002-09-03 Universidad Politecnica De Madrid Intermediate band semiconductor photovoltaic solar cell
US20030047752A1 (en) * 2000-09-29 2003-03-13 Campbell Joe C. Avalanche photodiodes with an impact-ionization-engineered multiplication region
US20050017176A1 (en) * 2003-07-25 2005-01-27 Koch Frederick E. Quantum dot infrared photodetector focal plane array
US20050155641A1 (en) * 2004-01-20 2005-07-21 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4011104A (en) * 1973-10-05 1977-03-08 Hughes Aircraft Company Thermoelectric system
US5404013A (en) * 1993-02-25 1995-04-04 Fujitsu Limited Infrared imaging system having an automatic focusing control
US6444897B1 (en) * 1999-06-09 2002-09-03 Universidad Politecnica De Madrid Intermediate band semiconductor photovoltaic solar cell
US6407439B1 (en) * 1999-08-19 2002-06-18 Epitaxial Technologies, Llc Programmable multi-wavelength detector array
US20030047752A1 (en) * 2000-09-29 2003-03-13 Campbell Joe C. Avalanche photodiodes with an impact-ionization-engineered multiplication region
US20050017176A1 (en) * 2003-07-25 2005-01-27 Koch Frederick E. Quantum dot infrared photodetector focal plane array
US20050155641A1 (en) * 2004-01-20 2005-07-21 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JEONG W.G. ET AL.: "Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots", APPLIED PHYSICS LETTERS, vol. 11, no. 9, February 2001 (2001-02-01), pages 1171 - 1173, XP012028687 *

Also Published As

Publication number Publication date
WO2008011152A2 (en) 2008-01-24
WO2008011152A9 (en) 2008-03-13

Similar Documents

Publication Publication Date Title
TW200711241A (en) VCSEL system with transverse p/n junction
WO2008011152A3 (en) Longwave infrared photodetector
WO2006083413A3 (en) Electronic device having an optical resonator
TW200721543A (en) Optoelectronic component
WO2005038997A3 (en) Intersubband detector with avalanche multiplier region
WO2008105301A1 (en) Ultraviolet absorber composition
TW200717879A (en) Optoelectronic component
EP1737089A4 (en) Variable wavelength semiconductor laser element, method for fabricating the same and gas detector employing it
WO2002089218A3 (en) Electroluminescent device with light extractor
WO2008120067A3 (en) Vehicle handle with a lighting device
EP2064782A4 (en) Extended tuning in external cavity quantum cascade lasers
EP1833127A4 (en) Solid laser module, optical amplifier, and laser oscillator
TW200634290A (en) Spectral imager and fabrication method
MX2009014110A (en) An element for emission of thermal radiation.
WO2008135903A3 (en) Laser sensor for self-mixing interferometry with increased detection range
AU2002330639A1 (en) Terahertz quantum cascade laser
USD599637S1 (en) One handed locking pliers
WO2006033914A3 (en) Light-amplifying structures and methods for surface-enhanced raman spectroscopy
WO2007142826A3 (en) Nanoparticle coupled to waveguide
EP2224284A4 (en) Composite photonic structure element, surface emitting laser using the composite photonic structure element, wavelength conversion element, and laser processing device using the wavelength conversion element
WO2006112971A3 (en) Mode-matching system for tunable external cavity laser
ATE519652T1 (en) SPORTS CAR (PRAM)
EP1697965A4 (en) NON-POLAR (A1, B, In, Ga)N QUANTUM WELLS
EP1894280A4 (en) Algainn-based lasers produced using etched facet technology
WO2004086578A3 (en) Improvements in and relating to vertical-cavity semiconductor optical devices

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07810645

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC

122 Ep: pct application non-entry in european phase

Ref document number: 07810645

Country of ref document: EP

Kind code of ref document: A2