WO2008013563A2 - Nanotube circuit analysis system and method - Google Patents

Nanotube circuit analysis system and method Download PDF

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Publication number
WO2008013563A2
WO2008013563A2 PCT/US2006/048212 US2006048212W WO2008013563A2 WO 2008013563 A2 WO2008013563 A2 WO 2008013563A2 US 2006048212 W US2006048212 W US 2006048212W WO 2008013563 A2 WO2008013563 A2 WO 2008013563A2
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Prior art keywords
cnt
template structure
identified
segments
proposed
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PCT/US2006/048212
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French (fr)
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WO2008013563A3 (en
Inventor
Roderick A. Hyde
Muriel Y. Ishikawa
Nathan P. Myhrvold
Clarence T. Tegreene
Charles Whitmer
Lowell L. Wood, Jr.
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Searete Llc
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Priority claimed from US11/314,738 external-priority patent/US7786465B2/en
Application filed by Searete Llc filed Critical Searete Llc
Priority to GB0812771A priority Critical patent/GB2448631B/en
Publication of WO2008013563A2 publication Critical patent/WO2008013563A2/en
Publication of WO2008013563A3 publication Critical patent/WO2008013563A3/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202Integrated devices comprising a common active layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621Providing a shape to conductive layers, e.g. patterning or selective deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221Carbon nanotubes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/734Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742Carbon nanotubes, CNTs
    • Y10S977/75Single-walled
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure
    • Y10S977/842Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes

Definitions

  • Applicant entity understands that the statute is unambiguous in its specific reference language and does not require either a serial number or any characterization, such as "continuation”, or “contmuation-in-part,” for claiming priority to U.S. patent applications. Notwithstanding the foregoing, applicant entity understands that the USPTO's computer programs have certain data entry requirements, and hence applicant entity is designating the present application as a continuation-in-part of its parent applications as set forth above, but expressly points out that such designations are not to be construed in any way as any type of commentary and/or admission as to whether or not the present application contains any new matter in addition to the matter of its parent application(s).
  • a method of editing a carbon nanotube template structure includes accessing a model representative of the carbon nanotube template structure, identifying at least one first proposed editing step, and determining a first predicted response of the carbon nanotube template structure if the first proposed editing step were performed.
  • the model includes representations of a plurality of junctions interconnected by carbon nanotube segments, where each segment and junction has an associated electrical behavior.
  • the proposed editing step may be selected from the group consisting of deleting at least one of the carbon nanotube segments or junctions, and connecting two carbon nanotube segments in physical proximity to one another.
  • the method may further include measuring electrical properties of the carbon nanotube template structure in order to construct the model, and/or performing the identified first proposed editing step.
  • the method may also further include identifying a second proposed editing step, determining a second predicted response of the carbon nanotube template structure to an electrical signal if the second proposed editing step were carried out, and optionally using the predicted responses of the first and second proposed editing steps to select and/or perform at least one of the proposed editing steps.
  • a computer program product includes a computer- readable signal-bearing medium bearing program instructions, the program instructions operable to perform a process in a computer system.
  • the process includes accessing a model representative of the carbon nanotube template structure, identifying at least one first proposed editing step, and determining a first predicted response of the carbon nanotube template structure if the first proposed editing step were performed.
  • the model includes representations of a plurality of junctions interconnected by carbon nanotube segments, where each segment and junction has an associated electrical behavior.
  • the proposed editing step may be selected from the group consisting of deleting at least one of the carbon nanotube segments or junctions, and connecting two carbon nanotube segments in physical proximity to one another.
  • the process may include identifying a plurality of proposed editing steps and determining the predicted response of the carbon nanotube template structure to each proposed editing step, and may further include selecting at least one of the plurality of proposed editing steps and outputting the at least one selected proposed editing steps.
  • Outputting the at least one selected proposed editing Steps may include outputting a control instruction to a system for editing the carbon nanotube template structure in accordance with the at least one selected proposed editing steps.
  • FIG. 1 is a schematic of a template device.
  • FIG. 2 is a schematic of the template device of FIG. 1 after selective editing.
  • FIG.3 is a schematic of an interconnected set of carbon nanotubes (CNTs).
  • Carbon nanotubes represent an attractive candidate material for dramatically reducing device sizes. They have been shown to exhibit diode-like properties when “kinks” (pentagon-heptagon defect pairs) are introduced (see, e.g. , Yao et al, "Carbon nanotube intramolecular junctions," Nature 402-.273-276 (Nov. 1999), incorporated by reference herein), and crossed nanotubes may act as nanoscale p-type Schottky diodes (see, e.g.
  • Single- walled carbon nanotubes may be metallic or semiconducting depending on their chirality.
  • Individual SWCNTs have a chirality defined by circumferential vector (n,m) in terms of graphite lattice units. When (n-m)/3 is an integer, the SWCNTs generally behave as metals, while other SWCNTs generally behave as semiconductors.
  • Fuhrer II found three types of behavior for crossed SWCNTs 3 depending on whether the constituent CNTs were metallic-metallic (MM), semiconducting-semiconducting (SS), or metallic-semiconducting (MS).
  • MM junctions and SS junctions exhibited roughly linear I-V behavior, with MM conductivities in the range of 0.086-0.26 s 2 /h and SS conductivities in the range of at least 0.011-0.06 e 2 /h.
  • MS junctions exhibited nonlinear I-V behavior, with much lower conductivities in the linear range and with a Schottky barrier of 190-290 meV.
  • Theoretical calculations see, e.g., Buldum, et al, "Contact resistance between carbon nanotubes.," Phys. Rev. B 63:161403(R) (Apr. 200I) 5 incorporated herein by reference
  • the conductivity of such junctions may be a sensitive function of atomic structure in the contact region (e.g., registration of hexagon structures in adjacent nanotubes).
  • CNTs may also be fabricated in a Y-shape, in which three nanotubes converge at a junction (see, e.g. , Papadapoulos "Electronic Transport in Y- Junction Carbon Nanotubes," Phys. Rev. Lett. 85(16):3476 ⁇ 3479, incorporated herein by reference).
  • Svich systems and the special ' subset of T-shaped junctions have been computationally modeled and found to exhibit current rectification (see, e.g., Srivastava, et al., “Computational Nanotechnology with Carbon Nanotubes and Fullerenes," Comp. Set Eng. 3(4):42-55 (JuI/ Aug 2001), incorporated herein by reference).
  • Experimental results (Papadapoulos, svprd) confirm rectifying behavior.
  • the rectifying structures described above may be combined to form more complex circuit elements (e.g., logic gates, such as those described in Dery ⁇ ke, et al., “Carbon Nanotube Inter- and Intramolecular Logic Gates," Nano Lett., l(9):453-456 (Aug. 2001), incorporated herein by reference) and circuits (e.g., a scalable one-bit adder, described in Patwardhan, supra), using conventional circuit design principles.
  • logic gates such as those described in Dery ⁇ ke, et al., “Carbon Nanotube Inter- and Intramolecular Logic Gates," Nano Lett., l(9):453-456 (Aug. 2001), incorporated herein by reference
  • circuits e.g., a scalable one-bit adder, described in Patwardhan, supra
  • a template device comprises two arrays of CNTs 10, 12 set at an angle to one another (90 degrees as shown, but other angles may also be used).
  • An intermediate layer 14 is interposed between the two arrays of CNTs.
  • FIG. 1 is shown in exploded view for clarity; in most embodiments, the CNTs 10, 1-2 will be in contact or at least in close proximity to intermediate layer 14.
  • the intermediate layer 14 is a flat layer, but in other embodiments, it may be a coating on the CNTs or have any other physical configuration that interposes it between CNTs of the two arrays.
  • the CNTs of each array may be metallic, semiconducting,, or a mixture of both types. In the configuration shown in FIG.
  • FIG. 2 shows a plan view of the template device of FIG. 1 after selective editing of the intermediate layer 14. As seen at junction 16, the intermediate layer is removed, allowing a CNT of the first array 10 and a CNT of the second array 12 to contact one another to form a junction. In addition, segment of CNT 18 has been removed between two additional junctions 20.
  • segments or junctions may be removed by an electron beam, ion beam, and/or a laser beam, either by direct etching or by illumination followed by a chemical development process, In other embodiments, segments or junctions may be removed by application of a voltage, for example by application of one.
  • the intermediate layer 14 may comprise any material that serves to separate the CNTs and that can be selectively removed or deactivated.
  • the intermediate layer may comprise a resist composition, which may be removed by conventional lithographic techniques (including but not limited to photoresist, e-beam resist, or X-ray resist).
  • the resist may comprise a material that can be locally removed or deactivated by application of a voltage between the first selected CNT and the second CNT 5 potentially obviating the need for lithographic systems.
  • the arrays of CNTs 10 and 12 may be formed by a variety of methods, including but not limited to pick-and-plaee, self-assembly of already-formed CNTs ⁇ e.g., by the methods of Dwyer, et ah, "The Design of DNA Self- Assembled Computing Circuitry," IEEE Trans. VLSISys., 12(11): 1214-1220 (Nov. 2004), incorporated herein by reference), or in situ growth of CNTs (e.g., by the methods of Jung, et al, "Mechanism of Selective Growth of Carbon Nanotubes on SiCh/Si Patterns," Nana Lett. 3(4):561-564 (Mar. 2003), incorporated herein by reference). Some of these methods may lend themselves to production of CNTs having particular chiralities and/or . conductivities, while others may produce arrays of CNTs having a distribution of chiralities and/or conductivities.
  • the chiralities and/or conductivities are not known a priori, it may be desirable to interrogate the material properties of individual CNTs in order to determine appropriate connections and/or deletions (e.g., by electrical testing, plasmon interactions, optical testing, atomic force microscopy, and/or other types of microscopy). In still other embodiments, it may be desirable to interrogate properties of individual CNTs or of groups of CNTs to locate regions having desired properties after some or all of the connections and/or deletions have been made. In yet other embodiments, it may be desirable to examine physical properties, as well as or instead of electrical properties, of CNTs and junction during any point in the process to determine additional connections and/or deletions or other configurational aspects. Physical properties may include, but are not limited to, location, size, defect location, and/or chemical environment.
  • FIG- 3 shows an interconnected set of CNTs including Y junctions 30.
  • Such an interconnected set may be produced, for example, by welding of long nanotubes (see, e.g., Terrones, et al, "Molecular Junctions by Joining Single-Walled Carbon Nanotubes," Phys. Rev. Lett. 89(7):075505 (Aug. 2002), and Krasheninnikov, et al, "Ion- irradiation induced welding of carbon nanotubes," Phys. Rev. B, 66:245403 (2002), both of which are incorporated herein by reference).
  • Arrays of Y-branched CNTs have also been produced by Papadopoulos, supra; these can be interconnected by similar techniques, or by the selective interconnection technique illustrated in FIGS. 1 and 2. In some embodiments, production of such interconnected sets of CNTs may be effectively random, while in other embodiments, CNTs may be interconnected in a predictable pattern.
  • sections 32 of the interconnected set 30 may be determined to act as logic gates or other desired circuit elements or circuits. In some embodiments, such sections may be located by determination of the chirality and/or conductivity of individual segments within the interconnected set by empirically determining the electrical properties of a interconnected set through application of voltages to selected "input" CNTs 34 and measurement of selected "output” CNTs 36, or by a combination of these methods (e.g., by determining chirality of selected "input” and “output” CNTs 5 identifying interconnecting junctions between them, and applying signals to the CNTs to determine behavior of the set of input CNTs, output CNTs 5 and interconnecting junctions). In some embodiments, segments or junctions of the interconnected set 30 may be deleted as discussed above. Such deletion may occur before, during, or after any measurement of properties of the interconnected set.
  • template structures such as those shown in FIGS. 1 and 3 may be constructed in bulk, and then individually edited to form custom circuits/ In such embodiments (and in particular in embodiments in which the chiralities and/or conductivities of individual CNTs are not known a priori), the determination of which CNT sections to connect and/or delete may be made using customized software.
  • the customized software accesses a model of a CNT template structure (using measurements of properties of CNTs in the particular template if appropriate) and identifies the effect of editing the CNT template structure, either by deleting segments or junctions, or by forming connections between segments in physical proximity.
  • the model includes the electrical behavior of the CNT segments and junctions of the template (e.g., the rectifying properties or lack thereof of individual junctions, and/or the conductivities of the CNT segments).
  • the customized software may determine circuit behavior from first principles.
  • the software may store schematics for building block structures (including by way of nonlimiting example the logic gates and adders discussed above), and allow circuit designers to specify circuit designs using conventional methods.
  • the software locates regions within the model of the template structure that could be modified as discussed above to implement the particular designs.
  • a computer-based system may then control the application of voltages, dynamic masks, serial e-beam etchers, or whatever other editing tools were appropriate to produce the desired circuit on a particular template structure.
  • an implementer may opt for a mainly hardware and/or firmware vehicle.
  • the implementer may opt for a mainly software implementation.
  • the implementer may also opt for some combination of hardware, software, and/or firmware, potentially including CNT-based circuits in whole or in part.

Abstract

Carbon nanotube template arrays may be edited to form connections between proximate nanotubes and/or to delete undesired nanotubes oτ nanotube junctions.

Description

Nanotυbe Circuit Analysis System and Method
lnventor(s): Roderick A. Hyde, Muriel Y. Ishikawa,
Nathan P. Myhrvold, Clarence T. Tegreene, Charles
Whitmer, Lowell L. Wood, Jr.
CROSS-REFERENCE TO RELATED APPLICATIONS
[1] The present application is related to and claims the benefit of the earliest available effective filing date(s) from the following listed application(s) (the "Related Applications") (e.g., claims earliest available priority dates for other than provisional patent applications or claims benefits under 35 USC § 119(e) for provisional patent applications, for any and all parent, grandparent, great-grandparent, etc. applications of the Related Application(s)).
Related Applications:
[2] For purposes of the USPTO extra-statutory requirements, the present application constitutes a continuation-in-part of United States Patent
Application No. , entitled DELETABLE NANOTlJBE CIRCUIT, attorney docket no. 0505-026-001A-000000, naming Roderick A. Hyde, Muriel Y. Ishikawa, Nathan P. Myhrvold, Clarence T. Tegreene, Charles Whitmer, and Lowell L. Wood, Jr. as inventors, filed contemporaneously herewith, which is currently co-pending, or is an application of which a currently co-pending application is entitled to the benefit of the filing date.
[3] For purposes of the USPTO extra-statutory requirements, the present application constitutes a continuation-in-part of United States Patent
Application No. . entitled CONNECTIBLE NANOTUBE
CIRCUIT, attorney docket no. 0505-026-001B-000000, naming Roderick A. Hyde, Muriel Y. Ishikawa, Nathan P. Myhrvold, Clarence T. Tegreene, Charles Whitmer, and Lowell L. Wood, Jr. as inventors, filed contemporaneously herewith, which is currently co-pending, or is an application of which a currently co-pending application is entitled to the benefit of the filing date.
[4] The United States Patent Office (USPTO) has published a notice to the effect that the USPTO' s computer programs require that patent applicants reference both a serial number and indicate whether an application is a continuation or continuation-in- part. Stephen G. Kunin, Benefit of Prior-Filed Application, USPTO Official Gazette March 18, 2003, available at http://www.usuto.gov/web/offices/com/sol/og/2003/ weekl 1/patbene.htm. The present applicant entity has provided above a specific reference to the application(s)jfrom which priority is being claimed as recited by statute. Applicant entity understands that the statute is unambiguous in its specific reference language and does not require either a serial number or any characterization, such as "continuation", or "contmuation-in-part," for claiming priority to U.S. patent applications. Notwithstanding the foregoing, applicant entity understands that the USPTO's computer programs have certain data entry requirements, and hence applicant entity is designating the present application as a continuation-in-part of its parent applications as set forth above, but expressly points out that such designations are not to be construed in any way as any type of commentary and/or admission as to whether or not the present application contains any new matter in addition to the matter of its parent application(s).
[5] All subject matter of the Related Applications and of any and all parent, grandparent, great-grandparent, etc. applications of the Related Applications is incorporated herein by reference to the extent such subject matter is not inconsistent herewith.
BACKGROUND
[6] According to the International Technology Roadmap for Semiconductors (ITRS), device sizes will continue to shrink, roughly in accordance with Moore's Law (which predicts a doubling of the number of transistors per unit area every 1.5-2 years). As device size requirements grow ever more stringent, traditional silicon lithography techniques may become inadequate, requiring a shift in materials and/or in circuit design techniques to keep pace with demands for improved performance. SUMMARY
[7] In one aspect, a method of editing a carbon nanotube template structure includes accessing a model representative of the carbon nanotube template structure, identifying at least one first proposed editing step, and determining a first predicted response of the carbon nanotube template structure if the first proposed editing step were performed. The model includes representations of a plurality of junctions interconnected by carbon nanotube segments, where each segment and junction has an associated electrical behavior. The proposed editing step may be selected from the group consisting of deleting at least one of the carbon nanotube segments or junctions, and connecting two carbon nanotube segments in physical proximity to one another. The method may further include measuring electrical properties of the carbon nanotube template structure in order to construct the model, and/or performing the identified first proposed editing step. The method may also further include identifying a second proposed editing step, determining a second predicted response of the carbon nanotube template structure to an electrical signal if the second proposed editing step were carried out, and optionally using the predicted responses of the first and second proposed editing steps to select and/or perform at least one of the proposed editing steps.
[8] In another aspect, a computer program product includes a computer- readable signal-bearing medium bearing program instructions, the program instructions operable to perform a process in a computer system. The process includes accessing a model representative of the carbon nanotube template structure, identifying at least one first proposed editing step, and determining a first predicted response of the carbon nanotube template structure if the first proposed editing step were performed. The model includes representations of a plurality of junctions interconnected by carbon nanotube segments, where each segment and junction has an associated electrical behavior. The proposed editing step may be selected from the group consisting of deleting at least one of the carbon nanotube segments or junctions, and connecting two carbon nanotube segments in physical proximity to one another. The process may include identifying a plurality of proposed editing steps and determining the predicted response of the carbon nanotube template structure to each proposed editing step, and may further include selecting at least one of the plurality of proposed editing steps and outputting the at least one selected proposed editing steps. Outputting the at least one selected proposed editing Steps may include outputting a control instruction to a system for editing the carbon nanotube template structure in accordance with the at least one selected proposed editing steps.
BRIEF DESCRIPTION OF THE FIGURES
[9] FIG. 1 is a schematic of a template device.
[10] FIG. 2 is a schematic of the template device of FIG. 1 after selective editing.
[11] FIG.3 is a schematic of an interconnected set of carbon nanotubes (CNTs).
DETAILED DESCRIPTION
[12] Carbon nanotubes represent an attractive candidate material for dramatically reducing device sizes. They have been shown to exhibit diode-like properties when "kinks" (pentagon-heptagon defect pairs) are introduced (see, e.g. , Yao et al, "Carbon nanotube intramolecular junctions," Nature 402-.273-276 (Nov. 1999), incorporated by reference herein), and crossed nanotubes may act as nanoscale p-type Schottky diodes (see, e.g. , Fuhrer, et al, "Transport through crossed nanotubes," Physica E 6:868-871 (2000), hereinafter referred to as "Fuhrer I," Fuhrer, et al, "Crossed Nanotube Junctions," Science 288:494-497 (Apr. 2000), hereinafter referred to as "Fuhrer II," and Patwardhan, et al., "Circuit and System Architecture for DNA-Guided SeIf- Assembly of Nanoelectronics," Proc. 1st Conf. Foundations ofNanosci. 344-358 (Apr. 2004), all of which are incorporated herein by reference).
[13] Single- walled carbon nanotubes (SWCNTs) may be metallic or semiconducting depending on their chirality. Individual SWCNTs have a chirality defined by circumferential vector (n,m) in terms of graphite lattice units. When (n-m)/3 is an integer, the SWCNTs generally behave as metals, while other SWCNTs generally behave as semiconductors. Fuhrer II found three types of behavior for crossed SWCNTs3 depending on whether the constituent CNTs were metallic-metallic (MM), semiconducting-semiconducting (SS), or metallic-semiconducting (MS). MM junctions and SS junctions exhibited roughly linear I-V behavior, with MM conductivities in the range of 0.086-0.26 s2/h and SS conductivities in the range of at least 0.011-0.06 e2/h. MS junctions exhibited nonlinear I-V behavior, with much lower conductivities in the linear range and with a Schottky barrier of 190-290 meV. Theoretical calculations (see, e.g., Buldum, et al, "Contact resistance between carbon nanotubes.," Phys. Rev. B 63:161403(R) (Apr. 200I)5 incorporated herein by reference) suggest that the conductivity of such junctions may be a sensitive function of atomic structure in the contact region (e.g., registration of hexagon structures in adjacent nanotubes).
[14] CNTs may also be fabricated in a Y-shape, in which three nanotubes converge at a junction (see, e.g. , Papadapoulos "Electronic Transport in Y- Junction Carbon Nanotubes," Phys. Rev. Lett. 85(16):3476~3479, incorporated herein by reference). Svich systems (and the special' subset of T-shaped junctions) have been computationally modeled and found to exhibit current rectification (see, e.g., Srivastava, et al., "Computational Nanotechnology with Carbon Nanotubes and Fullerenes," Comp. Set Eng. 3(4):42-55 (JuI/ Aug 2001), incorporated herein by reference). Experimental results (Papadapoulos, svprd) confirm rectifying behavior.
[15] The rectifying structures described above may be combined to form more complex circuit elements (e.g., logic gates, such as those described in Deryαke, et al., "Carbon Nanotube Inter- and Intramolecular Logic Gates," Nano Lett., l(9):453-456 (Aug. 2001), incorporated herein by reference) and circuits (e.g., a scalable one-bit adder, described in Patwardhan, supra), using conventional circuit design principles.
[16] As shown in FIGf. 1, a template device comprises two arrays of CNTs 10, 12 set at an angle to one another (90 degrees as shown, but other angles may also be used). An intermediate layer 14 is interposed between the two arrays of CNTs. (FIG. 1 is shown in exploded view for clarity; in most embodiments, the CNTs 10, 1-2 will be in contact or at least in close proximity to intermediate layer 14.) As shown, the intermediate layer 14 is a flat layer, but in other embodiments, it may be a coating on the CNTs or have any other physical configuration that interposes it between CNTs of the two arrays. The CNTs of each array may be metallic, semiconducting,, or a mixture of both types. In the configuration shown in FIG. 1, the CNTs of the first array 10 are insulated from the CNTs of the second array 12 by the intermediate layer. [17] FIG. 2 shows a plan view of the template device of FIG. 1 after selective editing of the intermediate layer 14. As seen at junction 16, the intermediate layer is removed, allowing a CNT of the first array 10 and a CNT of the second array 12 to contact one another to form a junction. In addition, segment of CNT 18 has been removed between two additional junctions 20. In some embodiments, segments or junctions may be removed by an electron beam, ion beam, and/or a laser beam, either by direct etching or by illumination followed by a chemical development process, In other embodiments, segments or junctions may be removed by application of a voltage, for example by application of one. or more timed pulses along the CNTs that are selected to temporally overlap at a common center, or by application of a voltage directly to a junction or segment. By selecting junctions at which the CNTs may be connected and segments or junctions in which they may be removed, complex circuits of CNTs can be built up in the template. In other embodiments, additional intermediate layers and CNT arrays may be added to increase the available complexity.
[18] The intermediate layer 14 may comprise any material that serves to separate the CNTs and that can be selectively removed or deactivated. In some embodiments, the intermediate layer may comprise a resist composition, which may be removed by conventional lithographic techniques (including but not limited to photoresist, e-beam resist, or X-ray resist). In other embodiments, the resist may comprise a material that can be locally removed or deactivated by application of a voltage between the first selected CNT and the second CNT5 potentially obviating the need for lithographic systems.
[19] The arrays of CNTs 10 and 12 may be formed by a variety of methods, including but not limited to pick-and-plaee, self-assembly of already-formed CNTs {e.g., by the methods of Dwyer, et ah, "The Design of DNA Self- Assembled Computing Circuitry," IEEE Trans. VLSISys., 12(11): 1214-1220 (Nov. 2004), incorporated herein by reference), or in situ growth of CNTs (e.g., by the methods of Jung, et al, "Mechanism of Selective Growth of Carbon Nanotubes on SiCh/Si Patterns," Nana Lett. 3(4):561-564 (Mar. 2003), incorporated herein by reference). Some of these methods may lend themselves to production of CNTs having particular chiralities and/or. conductivities, while others may produce arrays of CNTs having a distribution of chiralities and/or conductivities.
[20] In embodiments where the chiralities and/or conductivities are not known a priori, it may be desirable to interrogate the material properties of individual CNTs in order to determine appropriate connections and/or deletions (e.g., by electrical testing, plasmon interactions, optical testing, atomic force microscopy, and/or other types of microscopy). In still other embodiments, it may be desirable to interrogate properties of individual CNTs or of groups of CNTs to locate regions having desired properties after some or all of the connections and/or deletions have been made. In yet other embodiments, it may be desirable to examine physical properties, as well as or instead of electrical properties, of CNTs and junction during any point in the process to determine additional connections and/or deletions or other configurational aspects. Physical properties may include, but are not limited to, location, size, defect location, and/or chemical environment.
[21] FIG- 3 shows an interconnected set of CNTs including Y junctions 30. Such an interconnected set may be produced, for example, by welding of long nanotubes (see, e.g., Terrones, et al, "Molecular Junctions by Joining Single-Walled Carbon Nanotubes," Phys. Rev. Lett. 89(7):075505 (Aug. 2002), and Krasheninnikov, et al, "Ion- irradiation induced welding of carbon nanotubes," Phys. Rev. B, 66:245403 (2002), both of which are incorporated herein by reference). Arrays of Y-branched CNTs have also been produced by Papadopoulos, supra; these can be interconnected by similar techniques, or by the selective interconnection technique illustrated in FIGS. 1 and 2. In some embodiments, production of such interconnected sets of CNTs may be effectively random, while in other embodiments, CNTs may be interconnected in a predictable pattern.
[22] In either case, sections 32 of the interconnected set 30 may be determined to act as logic gates or other desired circuit elements or circuits. In some embodiments, such sections may be located by determination of the chirality and/or conductivity of individual segments within the interconnected set by empirically determining the electrical properties of a interconnected set through application of voltages to selected "input" CNTs 34 and measurement of selected "output" CNTs 36, or by a combination of these methods (e.g., by determining chirality of selected "input" and "output" CNTs5 identifying interconnecting junctions between them, and applying signals to the CNTs to determine behavior of the set of input CNTs, output CNTs5 and interconnecting junctions). In some embodiments, segments or junctions of the interconnected set 30 may be deleted as discussed above. Such deletion may occur before, during, or after any measurement of properties of the interconnected set.
[23] In a large interconnected set 30, many sections 32 having desired circuit properties may be present (either by design and controlled self-assembly, or by chance). Once identified as discussed above, these sections may be isolated from the interconnected set, either physically (by cutting junctions outside the desired section and moving it to a desired location), or effectively, by disconnecting segments of junctions not in the desired section to leave only continuous CNTs (which may function as leads) connected to the desired' section inputs and outputs.
[24] In some embodiments, template structures such as those shown in FIGS. 1 and 3 may be constructed in bulk, and then individually edited to form custom circuits/ In such embodiments (and in particular in embodiments in which the chiralities and/or conductivities of individual CNTs are not known a priori), the determination of which CNT sections to connect and/or delete may be made using customized software.
[25] In some embodiments, the customized software accesses a model of a CNT template structure (using measurements of properties of CNTs in the particular template if appropriate) and identifies the effect of editing the CNT template structure, either by deleting segments or junctions, or by forming connections between segments in physical proximity. The model includes the electrical behavior of the CNT segments and junctions of the template (e.g., the rectifying properties or lack thereof of individual junctions, and/or the conductivities of the CNT segments).
[26] In some embodiments, the customized software may determine circuit behavior from first principles. In other embodiments, the software may store schematics for building block structures (including by way of nonlimiting example the logic gates and adders discussed above), and allow circuit designers to specify circuit designs using conventional methods. The software then locates regions within the model of the template structure that could be modified as discussed above to implement the particular designs. In some embodiments, a computer-based system may then control the application of voltages, dynamic masks, serial e-beam etchers, or whatever other editing tools were appropriate to produce the desired circuit on a particular template structure.
[27] Those having skill in the art will recognize that the state of the art of circuit design has progressed to the point where there is typically little distinction left between hardware and software implementations of aspects of systems. The use of hardware or software is generally a design choice representing tradeoffs between cost, efficiency, flexibility, and other implementation considerations. Those having skill in the art will appreciate that there are various vehicles by which processes, systems and/or other technologies involving the use of logic and/or circuits can be effected {e.g., hardware, software, and/or firmware, potentially including CNT-based circuits in whole or in part), and that the preferred vehicle will vary with the context in which the processes, systems and/or other technologies are deployed. For example, if an implementer determines that speed is paramount, the implementer may opt for a mainly hardware and/or firmware vehicle. Alternatively, if flexibility is paramount, the implementer may opt for a mainly software implementation. In these or other situations, the implementer may also opt for some combination of hardware, software, and/or firmware, potentially including CNT-based circuits in whole or in part. Hence, there are several possible vehicles by which the processes, devices and/or other technologies involving logic and/or circuits described herein may be effected, none of which is inherently superior to the other. Those skilled in the art will recognize that optical aspects of implementations may require optically-oriented hardware, software, and or firmware.
[28] Other embodiments of the invention will be apparent to those skilled in the art from a consideration of the specification or practice of the invention disclosed herein. It is intended that the specification be considered as exemplary only, with the true scope and spirit of the invention being indicated by the following claims.
[29] What is claimed is:

Claims

1. A method of editing a carbon nanotube (CNT) template structure, comprising: accessing a model representative of the carbon nanotube (CNT) template structures the model representative of the CNT template structure including representations of a plurality of junctions interconnected by CNT segments, wherein each segment and junction has an associated electrical behavior; identifying at least one first proposed editing step selected from the group consisting of deleting at least one of the CNT segments or junctions; and connecting two CNT segments, the identified two CNT segments being in physical proximity,- and determining a first predicted response of the CNT template structure to an electrical signal if the identified first proposed editing step were performed.
2. The method of claim 1 , further comprising measuring electrical properties of the CNT template structure, and using the measured electrical properties to construct the model of the CNT template structure.
3. The method of claim 1 , further comprising performing the identified first proposed editing step.
4. The method of claim 1, further comprising: identifying a second proposed editing step selected from the group consisting of deleting at least one of the CNT segments or junctions; and connecting two CNT segments, the identified two CNT segments being in physical proximity; and determining a second predicted response of the CNT template structure to an electrical signal if the second identified editing step were performed.
5. The method of claim 4, further comprising: using the first predicted response and the second predicted response to select one of the identified first proposed editing step and the identified second proposed editing step.
6. The method of claim 5, further comprising performing the selected one of the identified first proposed editing step and the identified second proposed editing step.
7. A computer program product, comprising: a computer-readable signal-bearing medium bearing program instructions, the program instructions operable to perform a process in a computer system, the process including: accessing a model of a carbon nanotube (CNT) template structure, the model of the CNT template structure comprising a plurality of junctions interconnected by CNT segments, wherein each segment and junction has an associated electrical behavior; identifying at least one proposed editing step selected from the group consisting of deleting at least one of the CNT segments or junctions; and connecting two CNT segments, the identified two CNT segments being in physical proximity; determining a predicted response of the CNT template structure to an electrical signal if the identified editing step were performed.
8. The computer program product of claim 7, wherein the process includes identifying a plurality of proposed editing steps and determining the predicted response of the CNT template structure to each proposed editing step.
9. The computer program product of claim S, wherein the process further includes selecting at least one of the plurality of proposed editing steps and outputting the at least one selected proposed editing steps.
0. The computer program product of claim 9, wherein outpurting the at least one • selected proposed editing steps comprises outputting a control instruction to a system for editing the CNT template structure in accordance with the at least one selected proposed editing steps.
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US8336003B2 (en) 2010-02-19 2012-12-18 International Business Machines Corporation Method for designing optical lithography masks for directed self-assembly
US9428803B2 (en) 2012-12-21 2016-08-30 International Business Machines Corporation DNA/RNA in a Y-shaped nanochannel

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040026007A1 (en) * 2002-02-14 2004-02-12 Brian Hubert Method and apparatus for direct fabrication of nanostructures
US20050117441A1 (en) * 1999-07-02 2005-06-02 President And Fellows Of Harvard College Nanoscopic wire-based devices and arrays
US6963077B2 (en) * 2002-07-25 2005-11-08 California Institute Of Technology Sublithographic nanoscale memory architecture
US20050253137A1 (en) * 2003-11-20 2005-11-17 President And Fellows Of Harvard College Nanoscale arrays, robust nanostructures, and related devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
JP3991602B2 (en) * 2001-03-02 2007-10-17 富士ゼロックス株式会社 Carbon nanotube structure manufacturing method, wiring member manufacturing method, and wiring member
EP1483427A1 (en) 2002-02-11 2004-12-08 Rensselaer Polytechnic Institute Directed assembly of highly-organized carbon nanotube architectures
US20050112051A1 (en) * 2003-01-17 2005-05-26 Duke University Systems and methods for producing single-walled carbon nanotubes (SWNTS) on a substrate
US7144563B2 (en) 2004-04-22 2006-12-05 Clemson University Synthesis of branched carbon nanotubes
WO2006076036A2 (en) * 2004-05-25 2006-07-20 The Trustees Of The University Of Pennsylvania Nanostructure assemblies, methods and devices thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050117441A1 (en) * 1999-07-02 2005-06-02 President And Fellows Of Harvard College Nanoscopic wire-based devices and arrays
US20040026007A1 (en) * 2002-02-14 2004-02-12 Brian Hubert Method and apparatus for direct fabrication of nanostructures
US6963077B2 (en) * 2002-07-25 2005-11-08 California Institute Of Technology Sublithographic nanoscale memory architecture
US20050253137A1 (en) * 2003-11-20 2005-11-17 President And Fellows Of Harvard College Nanoscale arrays, robust nanostructures, and related devices

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