WO2008016516A2 - Methods for reducing surface charges during the manufacture of microelectromechanical systems devices - Google Patents
Methods for reducing surface charges during the manufacture of microelectromechanical systems devices Download PDFInfo
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- WO2008016516A2 WO2008016516A2 PCT/US2007/016633 US2007016633W WO2008016516A2 WO 2008016516 A2 WO2008016516 A2 WO 2008016516A2 US 2007016633 W US2007016633 W US 2007016633W WO 2008016516 A2 WO2008016516 A2 WO 2008016516A2
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- sacrificial material
- ionized gas
- etching
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- phase chemical
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00563—Avoid or control over-etching
- B81C1/00579—Avoid charge built-up
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
Definitions
- the invention relates generally to microelectromechanical systems (MEMS), and more particularly to interferometric modulators and display devices comprising such interferometric modulators.
- MEMS microelectromechanical systems
- Microelectromechanical systems include micro mechanical elements, actuators, and electronics. Micromechanical elements may be created using deposition, etching, and or other micromachining processes that etch away parts of substrates and/or deposited material layers or that add layers to form electrical and electromechanical devices.
- One type of MEMS device is called an interferometric modulator.
- interferometric modulator or interferometric light modulator refers to a device that selectively absorbs and/or reflects light using the principles of optical interference.
- an interferometric modulator may comprise a pair of conductive plates, one or both of which may be transparent and/or reflective in whole or part and capable of relative motion upon application of an appropriate electrical signal.
- one plate may comprise a stationary layer deposited on a substrate and the other plate may comprise a metallic membrane separated from the stationary layer by an air gap.
- the position of one plate in relation to another can change the optical interference of light incident on the interferometric modulator.
- Such devices have a wide range of applications, and it would be beneficial in the art to utilize and/or modify the characteristics of these types of devices so that their features can be exploited in improving existing products and creating new products that have not yet been developed.
- methods are provided for manufacturing a microelectromechanical systems (MEMS) device, wherein the methods reduce or prevent the accumulation of charges on surfaces of one or more structural elements of the MEMS device.
- methods are provided for etching a sacrificial layer, the methods including the steps of exposing a sacrificial material to a gas phase chemical etchant and an ionized gas, the ionized gas being substantially non-etching against the sacrificial material; and etching the sacrificial material, wherein the etching involves removing a substantial portion of the sacrificial material.
- methods for manufacturing a MEMS device, wherein the methods include the steps of depositing a sacrificial material on a substrate; depositing a structural material over the sacrificial material; and etching the sacrificial material.
- the etching involves exposing the sacrificial material to a gas phase chemical etchant and an ionized gas, wherein the ionized gas is substantially non-reactive with the sacrificial material.
- MEMS devices are provided herein which are manufactured according to a method that includes the steps of depositing a sacrificial material on a substrate; depositing a structural material over the sacrificial material; and etching the sacrificial material.
- the etching in this embodiment involves exposing the sacrificial material to a gas phase chemical etchant and an ionized gas, wherein the ionized gas is substantially non-reactive with the sacrificial material.
- an apparatus that includes a plurality of MEMS devices manufactured according to methods described herein.
- the apparatus may further include a display; a processor configured to process image data and communicate with the display; and a memory device configured to communicate with the processor.
- FIG. 1 is an isometric view depicting a portion of one embodiment of an interferometric modulator display in which a movable reflective layer of a first interferometric modulator is in a relaxed position and a movable reflective layer of a second interferometric modulator is in an actuated position.
- FIG. 2 is a system block diagram illustrating one embodiment of an electronic device incorporating a 3x3 interferometric modulator display.
- FIG. 3 is a diagram of movable mirror position versus applied voltage for one exemplary embodiment of an interferometric modulator of FIG. 1.
- FIG. 4 is an illustration of a set of row and column voltages that may be used to drive an interferometric modulator display.
- FIG. 5A illustrates one exemplary frame of display data in the 3x3 interferometric modulator display of FIG. 2.
- FIG. SB illustrates one exemplary timing diagram for row and column signals that may be used to write the frame of FIG. 5 A.
- FIGS. 6A and 6B are system block diagrams illustrating an embodiment of a visual display device comprising a plurality of interferometric modulators.
- FIG. 7A is a cross section of the device of FIG. 1.
- FIG. 7B is a cross section of an alternative embodiment of an interferometric modulator.
- FIG. 7C is a cross section of another alternative embodiment of an interferometric modulator.
- FIG. 7D is a cross section of yet another alternative embodiment of an interferometric modulator.
- FIG. 7E is a cross section of an additional alternative embodiment of an interferometric modulator.
- FIG. 8A is a schematic diagram illustrating an embodiment of a back plane support for a separable interferometric modulator.
- FIG. 8B is a schematic diagram illustrating an alternative embodiment of a back plane of a separable interferometric modulator.
- FIG. 9A shows a series of cross-sectional views illustrating the deposition, patterning and etching of multiple sub-layers of sacrificial materials in an embodiment of a method for making interferometric modulators with interferometric cavities of varying dimensions.
- FIG. 9B is a cross sectional view showing three adjacent interferometric modulators comprising a pixel in a color display in the pre-release state of manufacture, prior to etching of the sacrificial layers.
- FIG. 9C is a cross sectional view showing the interferometric modulators of FIG. 9B, each in a relaxed state, after release by etching of the sacrificial layers.
- Fig. 10 illustrates an apparatus for etching a MEMS device substrate that is supplied with an ionized gas for reducing and/or preventing surface charges.
- Fig. 11 illustrates an etching apparatus similar to the apparatus of Fig. 10 which facilitates the simultaneous processing of multiple MEMS device substrates.
- Fig. 12 illustrates the interior chamber of an etching apparatus, which allows independent control over the production of an ionized gas and its delivery to a MEMS device substrate.
- the embodiments may be implemented in or associated with a variety of electronic devices such as, but not limited to, mobile telephones, wireless devices, personal data assistants (PDAs), hand-held or portable computers, GPS receivers/navigators, cameras, MP3 players, camcorders, game consoles, wrist watches, clocks, calculators, television monitors, flat panel displays, computer monitors, auto displays (e.g., odometer display, etc.), cockpit controls and/or displays, display of camera views (e.g., display of a rear view camera in a vehicle), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., display of images on a piece of jewelry).
- MEMS devices of similar structure to those described herein can also be used in non-display applications such as in electronic switching devices.
- reducing or preventing the formation of surface-associated electrical charges during the manufacture of an interferometric modulator or other MEMS device, relative to established methods.
- the formation of surface charges is reduced or prevented by etching sacrificial materials with a gas phase chemical etchant in the presence of an ionized gas. Etching in the presence of the ionized gas preferably neutralizes charged species produced during the etching process, which are then removed along with other etching byproducts.
- reducing surface charges according to methods provided herein yields improvements in one or more aspects of MEMS manufacturing methods and MEMS devices manufactured by such methods.
- FIG. 1 One interferometric modulator display embodiment comprising an interferometric MEMS display element is illustrated in Figure 1.
- the pixels are in either a bright or dark state.
- the display element In the bright ("on” or “open") state, the display element reflects a large portion of incident visible light to a user.
- the dark When in the dark (“off * or “closed”) state, the display element reflects little incident visible light to the user.
- the light reflectance properties of the "on” and "off states may be reversed.
- MEMS pixels can be configured to reflect predominantly at selected colors, allowing for a color display in addition to black and white.
- Figure 1 is an isometric view depicting two adjacent pixels in a series of pixels of a visual display, wherein each pixel comprises a MEMS interferometric modulator.
- an interferometric modulator display comprises a row/column array of these interferometric modulators.
- Each interferometric modulator includes a pair of reflective layers positioned at a variable and controllable distance from each other to form a resonant optical cavity with at least one variable dimension.
- one of the reflective layers may be moved between two positions. In the first position, referred to herein as the relaxed position, the movable reflective layer is positioned at a relatively large distance from a fixed partially reflective layer.
- the movable reflective layer In the second position, referred to herein as the actuated position, the movable reflective layer is positioned more closely adjacent to the partially reflective layer. Incident light that reflects from the two layers interferes constructively or destructively depending on the position of the movable reflective layer, producing either an overall reflective or non-reflective state for each pixel.
- the depicted portion of the pixel array in Figure 1 includes two adjacent interferometric modulators 12a and 12b.
- a movable reflective layer 14a is illustrated in a relaxed position at a predetermined distance from an optical stack 16a, which includes a partially reflective layer.
- the movable reflective layer 14b is illustrated in an actuated position adjacent to the optical stack 16b.
- optical stack 16 typically comprise several fused layers, which can include an electrode layer, such as indium tin oxide (ITO), a partially reflective layer, such as chromium, and a transparent dielectric.
- ITO indium tin oxide
- the optical stack 16 is thus electrically conductive, partially transparent and partially reflective, and may be fabricated, for example, by depositing one or more of the above layers onto a transparent substrate 20.
- the partially reflective layer can be formed from a variety of materials that are partially reflective such as various metals, semiconductors, and dielectrics.
- the partially reflective layer can be formed of one or more layers of materials, and each of the layers can be formed of a single material or a combination of materials.
- the layers of the optical stack are patterned into parallel strips, and may form row electrodes in a display device as described further below.
- the movable reflective layers 14a, 14b may be formed as a series of parallel strips of a deposited metal layer or layers (orthogonal to the row electrodes of 16a, 16b) deposited on top of posts 18 and an intervening sacrificial material deposited between the posts 18. When the sacrificial material is etched away, the movable reflective layers 14a, 14b are separated from the optical stacks 16a, 16b by a defined gap 19.
- a highly conductive and reflective material such as aluminum may be used for the reflective layers 14, and these strips may form column electrodes in a display device.
- Figures 2 through 5B illustrate one exemplary process and system for using an array of interferometric modulators in a display application.
- Figure 2 is a system block diagram illustrating one embodiment of an electronic device that may incorporate aspects of the invention.
- the electronic device includes a processor 21 which may be any general purpose single- or multi-chip microprocessor such as an ARM, Pentium®, Pentium II®, Pentium m®, Pentium IV®, Pentium® Pro, an 8051, a MIPS®, a Power PC®, an ALPHA®, or any special purpose microprocessor such as a digital signal processor, microcontroller, or a programmable gate array.
- a processor 21 which may be any general purpose single- or multi-chip microprocessor such as an ARM, Pentium®, Pentium II®, Pentium m®, Pentium IV®, Pentium® Pro, an 8051, a MIPS®, a Power PC®, an ALPHA®, or any special purpose microprocessor such
- the processor 21 may be configured to execute one or more software modules.
- the processor may be configured to execute one or more software applications, including a web browser, a telephone application, an email program, or any other software application.
- the processor 21 is also configured to communicate with an array driver 22.
- the array driver 22 includes a row driver circuit 24 and a column driver circuit 26 that provide signals to a display array or panel 30.
- the cross section of the array illustrated in Figure 1 is shown by the lines 1-1 in Figure 2.
- the row/column actuation protocol may take advantage of a hysteresis property of these devices illustrated in Figure 3. It may require, for example, a 10 volt potential difference to cause a movable layer to deform from the relaxed state to the actuated state. However, when the voltage is reduced from that value, the movable layer maintains its state as the voltage drops back below 10 volts.
- the movable layer does not relax completely until the voltage drops below 2 volts.
- the row/column actuation protocol can be designed such that during row strobing, pixels in the strobed row that are to be actuated are exposed to a voltage difference of about 10 volts, and pixels that are to be relaxed are exposed to a voltage difference of close to zero volts.
- each pixel sees a potential difference within the "stability window" of 3-7 volts in this example.
- This feature makes the pixel design illustrated in Figure 1 stable under the same applied voltage conditions in either an actuated or relaxed pre-existing state. Since each pixel of the interferometric modulator, whether in the actuated or relaxed state, is essentially a capacitor formed by the fixed and moving reflective layers, this stable state can be held at a voltage within the hysteresis window with almost no power dissipation. Essentially no current flows into the pixel if the applied potential is fixed.
- a display frame may be created by asserting the set of column electrodes in accordance with the desired set of actuated pixels in the first row.
- a row pulse is then applied to the row 1 electrode, actuating the pixels corresponding to the asserted column lines.
- the asserted set of column electrodes is then changed to correspond to the desired set of actuated pixels in the second row.
- a pulse is then applied to the row 2 electrode, actuating the appropriate pixels in row 2 in accordance with the asserted column electrodes.
- the row 1 pixels are unaffected by the row 2 pulse, and remain in the state they were set to during the row 1 pulse. This may be repeated for the entire series of rows in a sequential fashion to produce the frame.
- the frames are refreshed and/or updated with new display data by continually repeating this process at some desired number of frames per second.
- protocols for driving row and column electrodes of pixel arrays to produce display frames are also well known and may be used in conjunction with the present invention.
- Figures 4, 5A, and SB illustrate one possible actuation protocol for creating a display frame on the 3x3 array of Figure 2.
- Figure 4 illustrates a possible set of column and row voltage levels that may be used for pixels exhibiting the hysteresis curves of Figure 3.
- actuating a pixel involves setting the appropriate column to -Vbj as , and the appropriate row to + ⁇ V, which may correspond to -5 volts and +5 volts respectively Relaxing the pixel is accomplished by setting the appropriate column to +V D i as , and the appropriate row to the same + ⁇ V, producing a zero volt potential difference across the pixel.
- the pixels are stable in whatever state they were originally in, regardless of whether the column is at + Vbias > or -V
- voltages of opposite polarity than those described above can be used, e.g., actuating a pixel can involve setting the appropriate column to +Vbj as , and the appropriate row to - ⁇ V.
- releasing the pixel is accomplished by setting the appropriate column to -V D j as , and the appropriate row to the same - ⁇ V, producing a zero volt potential difference across the pixel.
- Figure 5B is a timing diagram showing a series of row and column signals applied to the 3x3 array of Figure 2 which will result in the display arrangement illustrated in Figure 5A, where actuated pixels are non-reflective.
- the pixels Prior to writing the frame illustrated in Figure 5A, the pixels can be in any state, and in this example, all the rows are at 0 volts, and all the columns are at +5 volts. With these applied voltages, all pixels are stable in their existing actuated or relaxed states.
- pixels (1,1), (1,2), (2,2), (3,2) and (3,3) are actuated.
- columns 1 and 2 are set to -5 volts, and column 3 is set to +5 volts. This does not change the state of any pixels, because all the pixels remain in the 3-7 volt stability window.
- Row 1 is then strobed with a pulse that goes from 0, up to 5 volts, and back to zero. This actuates the (1,1) and (1,2) pixels and relaxes the (1,3) pixel. No other pixels in the array are affected.
- column 2 is set to -5 volts, and columns 1 and 3 are set to +5 volts.
- Row 3 is similarly set by setting columns 2 and 3 to -5 volts, and column 1 to +5 volts.
- the row 3 strobe sets the row 3 pixels as shown in Figure 5A. After writing the frame, the row potentials are zero, and the column potentials can remain at either +5 or -5 volts, and the display is then stable in the arrangement of Figure 5A. It will be appreciated that the same procedure can be employed for arrays of dozens or hundreds of rows and columns.
- FIGS 6A and 6B are system block diagrams illustrating an embodiment of a display device 40.
- the display device 40 can be, for example, a cellular or mobile telephone.
- the same components of display device 40 or slight variations thereof are also illustrative of various types of display devices such as televisions and portable media players.
- the display device 40 includes a housing 41, a display 30, an antenna 43, a speaker 45, an input device 48, and a microphone 46.
- the housing 41 is generally formed from any of a variety of manufacturing processes as are well known to those of skill in the art, including injection molding, and vacuum forming.
- the housing 41 may be made from any of a variety of materials, including but not limited to plastic, metal, glass, rubber, and ceramic, or a combination thereof.
- the housing 41 includes removable portions (not shown) that may be interchanged with other removable portions of different color, or containing different logos, pictures, or symbols.
- the display 30 of exemplary display device 40 may be any of a variety of displays, including a bi-stable display, as described herein.
- the display 30 includes a flat-panel display, such as plasma, EL, OLED, STN LCD, or TFT LCD as described above, or a non-flat-panel display, such as a CRT or other tube device, as is well known to those of skill in the art.
- the display 30 includes an interferometric modulator display, as described herein.
- the components of one embodiment of exemplary display device 40 are schematically illustrated in Figure 6B.
- the illustrated exemplary display device 40 includes a housing 41 and can include additional components at least partially enclosed therein.
- the exemplary display device 40 includes a network interface 27 that includes an antenna 43 which is coupled to a transceiver 47.
- the transceiver 47 is connected to a processor 21, which is connected to conditioning hardware 52.
- the conditioning hardware 52 may be configured to condition a signal (e.g. filter a signal).
- the conditioning hardware 52 is connected to a speaker 45 and a microphone 46.
- the processor 21 is also connected to an input device 48 and a driver controller 29.
- the driver controller 29 is coupled to a frame buffer 28, and to an array driver 22, which in turn is coupled to a display array 30.
- a power supply 50 provides power to all components as required by the particular exemplary display device 40 design.
- the network interface 27 includes the antenna 43 and the transceiver 47 so that the exemplary display device 40 can communicate with one ore more device s over a network.
- the network interface 27 may also have some processing capabilities to relieve requirements of the processor 21.
- the antenna 43 is any antenna known to those of skill in the art for transmitting and receiving signals.
- the antenna transmits and receives RF signals according to the IEEE 802.11 standard, including IEEE 802.11 (a), (b), or (g).
- the antenna transmits and receives RF signals according to the BLUETOOTH standard.
- the antenna is designed to receive CDMA, GSM, AMPS or other known signals that are used to communicate within a wireless cell phone network.
- the transceiver 47 pre- processes the signals received from the antenna 43 so that they may be received by and further manipulated by the processor 21.
- the transceiver 47 also processes signals received from the processor 21 so that they may be transmitted from the exemplary display device 40 via the antenna 43.
- the transceiver 47 can be replaced by a receiver.
- network interface 27 can be replaced by an image source, which can store or generate image data to be sent to the processor 21.
- the image source can be a memory device, such as a digital video disc (DVD) or a hard-disc drive that contains image data, or a software module that generates image data.
- Processor 21 generally controls the overall operation of the exemplary display device 40.
- the processor 21 receives data, such as compressed image data from the network interface 27 or an image source, and processes the data into raw image data or into a format that is readily processed into raw image data.
- the processor 21 then sends the processed data to the driver controller 29 or to frame buffer 28 for storage.
- Raw data typically refers to the information that identifies the image characteristics at each location within an image. For example, such image characteristics can include color, saturation, and gray-scale level.
- the processor 21 includes a microcontroller, CPU, or logic unit to control operation of the exemplary display device 40.
- Conditioning hardware 52 generally includes amplifiers and filters for transmitting signals to the speaker 45, and for receiving signals from the microphone 46. Conditioning hardware 52 may be discrete components within the exemplary display device 40, or may be incorporated within the processor 21 or other components.
- the driver controller 29 takes the raw image data generated by the processor 21 either directly from the processor 21 or from the frame buffer 28 and reformats the raw image data appropriately for high speed transmission to the array driver 22. Specifically, the driver controller 29 reformats the raw image data into a data flow having a raster-like format, such that it has a time order suitable for scanning across the display array 30. Then the driver controller 29 sends the formatted information to the array driver 22.
- a driver controller 29, such as a LCD controller is often associated with the system processor 21 as a stand-alone Integrated Circuit (IC), such controllers may be implemented in many ways. They may be embedded in the processor 21 as hardware, embedded in the processor 21 as software, or fully integrated in hardware with the array driver 22.
- IC Integrated Circuit
- the array driver 22 receives the formatted information from the driver controller 29 and reformats the video data into a parallel set of waveforms that are applied many times per second to the hundreds and sometimes thousands of leads coming from the display's x-y matrix of pixels.
- driver controller 29 is a conventional display controller or a bi-stable display controller (e.g., an interferometric modulator controller).
- array driver 22 is a conventional driver or a bi-stable display driver (e.g., an interferometric modulator display).
- a driver controller 29 is integrated with the array driver 22.
- display array 30 is a typical display array or a bi-stable display array (e.g., a display including an array of interferometric modulators).
- the input device 48 allows a user to control the operation of the exemplary display device 40.
- input device 48 includes a keypad, such as a QWERTY keyboard or a telephone keypad, a button, a switch, a touch-sensitive screen, a pressure- or heat-sensitive membrane.
- the microphone 46 is an input device for the exemplary display device 40. When the microphone 46 is used to input data to the device, voice commands may be provided by a user for controlling operations of the exemplary display device 40.
- Power supply 50 can include a variety of energy storage devices as are well known in the art.
- power supply 50 is a rechargeable battery, such as a nickel -cadmium battery or a lithium ion battery.
- power supply 50 is a renewable energy source, a capacitor, or a solar cell, including a plastic solar cell, and solar-cell paint.
- power supply 50 is configured to receive power from a wall outlet.
- control programmability resides, as described above, in a driver controller which can be located in several places in the electronic display system. In some cases control programmability resides in the array driver 22. Those of skill in the art will recognize that the above-described optimization may be implemented in any number of hardware and/or software components and in various configurations. [0057J The details of the structure of interferometric modulators that operate in accordance with the principles set forth above may vary widely.
- Figures 7A-7E illustrate five different embodiments of the movable reflective layer 14 and its supporting structures.
- Figure 7A is a cross section of the embodiment of Figure 1, where a strip of metal material 14 is deposited on orthogonally extending supports 18.
- the moveable reflective layer 14 is attached to supports at the corners only, on tethers 32.
- the moveable reflective layer 14 is suspended from a deformable layer 34, which may comprise a flexible metal.
- the deformable layer 34 connects, directly or indirectly, to the substrate 20 around the perimeter of the deformable layer 34. These connections are herein referred to as support posts.
- the embodiment illustrated in Figure 7D has support post plugs 42 upon which the deformable layer 34 rests.
- the movable reflective layer 14 remains suspended over the cavity, as in Figures 7A-7C, but the deformable layer 34 does not form the support posts by filling holes between the deformable layer 34 and the optical stack 16.
- the support posts are formed of a planarization material, which is used to form support post plugs 42.
- the embodiment illustrated in Figure 7E is based on the embodiment shown in Figure 7D, but may also be adapted to work with any of the embodiments illustrated in Figures 7A- 7C as well as additional embodiments not shown.
- an extra layer of metal or other conductive material has been used to form a bus structure 44. This allows signal routing along the back of the interferometric modulators, eliminating a number of electrodes that may otherwise have had to be formed on the substrate 20.
- the interferometric modulators function as direct-view devices, in which images are viewed from the front side of the transparent substrate 20, the side opposite to that upon which the modulator is arranged.
- the reflective layer 14 optically shields the portions of the interferometric modulator on the side of the reflective layer opposite the substrate 20, including the deformable layer 34. This allows the shielded areas to be configured and operated upon without negatively affecting the image quality.
- Such shielding allows the bus structure 44 in Figure 7E, which provides the ability to separate the optical properties of the modulator from the electromechanical properties of the modulator, such as addressing and the movements that result from that addressing.
- This separable modulator architecture allows the structural design and materials used for the electromechanical aspects and the optical aspects of the modulator to be selected and to function independently of each other.
- the embodiments shown in Figures 7C-7E have additional benefits deriving from the decoupling of the optical properties of the reflective layer 14 from its mechanical properties, which are carried out by the deformable layer 34. This allows the structural design and materials used for the reflective layer 14 to be optimized with respect to the optical properties, and the structural design and materials used for the deformable layer 34 to be optimized with respect to desired mechanical properties.
- FIGs 8A and 8B Two possible configurations for the deformable layer 34 are shown in Figures 8A and 8B, which depict views from the back of the modulator, which may also be seen as the bottom of the modulator shown in Figure 1 , or the top of the modulators shown in Figures IA-TE.
- the deformable layer 34 is in the form of a flexible membrane supported at its corners by support posts 72a-d, which are anchored in the substrate 20 and/or a layer above the substrate 20, such as the optical stack 16 (see cross-sectional views of Figure 7).
- the support posts 72a-d include the support post plugs 42.
- the deformable layer 34 connects to the underlying reflective layer 14, demarcated by the dotted line in Figure 8 A, via a large center back support 74 and four smaller surrounding supports 76a-d.
- the back support 74 and the surrounding supports 76a-d can be comprised of the same planarization material as support post plugs 42, or of any suitable material.
- the deformable layer 34 suspends the reflective layer 14 over the optical stack.
- the deformable layer 34 is patterned to form thin, linear straps 78a-d connected to each support post 72a-d. The straps are attached to the reflective layer 14 by the center support 74.
- the configurations of Figures 8A and 8B are two alternatives, among many possibilities.
- Interferometric modulators useful in the invention may comprise any configuration that gives the desired freedom of movement to the reflective layer 14 and the desired mechanical characteristics of that movement.
- MEMS devices including but not limited to interferometric modulators, wherein the methods yield substantial improvements in one or more aspects of MEMS manufacturing processes and/or MEMS devices made by such methods.
- Methods described herein can be practiced in conjunction with any number of methods known in the semiconductor, integrated circuit, and/or MEMS fields. Methods provided herein typically involve a series of material deposition, patterning, and etching steps, along with various additional steps, such as cleaning, masking, removing, washing, doping, charging, heating, cooling, moving, storing, connecting (e.g., to other components), testing, and the like. Examples of suitable techniques are described, for example, in U.S. Pat. No. 6,040,937 and U.S. Patent Application No. 2004/0051929. Methods for manufacturing a particular device may entail significant variations from established methods, however, depending for example on the type and configuration of the device being manufactured.
- a significant problem in the manufacture of MEMS devices is the accumulation of surface-associated electrical charges ("surface charges"), which can lead to a variety of manufacturing and/or performance issues.
- surface charges can attract and hold particulate contaminants that interfere with optical, mechanical, and/or other aspects of MEMS devices.
- Surface charges can also cause electrostatic discharge (ESD) events, which can permanently damage circuitry and/or other components.
- ESD electrostatic discharge
- Surface charge-related problems may be manifested as manufacturing defects, which can decrease production efficiency and/or product quality, and/or as "latent" defects, which can cause system failures or other problems at various post-manufacturing stages, such as product packaging, transport, storage, and/or use. Latent defects are particularly problematic, due, for example, to difficulties in detecting defective products and diagnosing related reliability and/or performance issues.
- MEMS devices manufactured by established methods typically accumulate a substantial number of surface charges, requiring additional processing steps to remove such surface charges and/or reduce their deleterious effects.
- a variety of methods for addressing surface charges in MEMS devices are known in the art (e.g., in the art of semiconductor manufacturing).
- MEMS manufacturing processes typically incorporate materials and/or handling steps for discharging surface charges by grounding one or more components of a MEMS device. Although grounding can successfully eliminate some surface charges, other surface charges, such as those associated with insulating materials (e.g., dielectric layers) or with conductive materials that are structurally inaccessible, are not susceptible to discharge by grounding.
- Devices can also be exposed to ionized air or another ionized gas, for example in a "clean room” or a microenvironment therein, in order to neutralize surface charges. While ionization methods can effectively dissipate some surface charges, others are resistant to neutralization, such as those residing on surfaces isolated from the surrounding environment. Moreover, the accumulation of surface charges and/or their subsequent neutralization can alter surface chemistries or other material properties, and thereby negatively effect optical, mechanical, and/or other properties of MEMS devices.
- the formation of surface charges on one or more structural elements of a MEMS device is reduced or prevented via methods provided herein for etching a sacrificial material.
- a primary mechanism underlying the accumulation of surface charges on MEMS devices is triboelectric charging, whereby charge transfer occurs between two or more surfaces that come into contact and then separate during the manufacturing process.
- Etching processes are particularly problematic with regard to surface charges, since they typically involve the removal of sacrificial materials that have extensive contacts with structural or other materials.
- sacrificial is used herein according to its ordinary meaning(s), for example to describe materials that are removed in the course of manufacturing a MEMS device (e.g., a sacrificial material) and/or structures comprising such materials (e.g., a sacrificial layer).
- the separation of surface contacts between a sacrificial material and structural materials comprising a MEMS device results in triboelectric charging of the surfaces, for example via the donation and acceptance of electrons between the surfaces to produce local regions of positive and negative charge.
- charged species created via chemical etching, as well as charged contaminants can adsorb, condense (physisorb), chemisorb, and/or otherwise adhere to one or more surfaces of a MEMS device.
- methods provided herein prevent or reduce the formation and/or accumulation of surfaces charges by etching sacrificial materials with a gas phase chemical etchant in the presence of an ionized gas, wherein the ionized gas is preferably substantially non-etching against the sacrificial material and/or the materials comprising the MEMS device.
- etching in the presence of an ionized gas neutralizes charged species that would otherwise adhere to one or more surfaces of the device.
- charge-neutralized species do not substantially adhere to surfaces of the MEMS device, but rather are removed along with other byproducts of the etching process, for example via a vacuum source.
- methods provided herein can prevent the initial formation of surface charges, as opposed to removing or compensating for surface charges after they have formed.
- methods provided herein may yield improvements in efficiency, cost, assembly time, accuracy, reproducibility (e.g., lower tolerances) and/or other aspects of MEMS manufacturing methods.
- MEMS devices having reduced levels of surface charges and systems comprising such devices. In various embodiments, such devices and systems exhibit improved durability, reliability, performance, and/or other aspects relative to devices and systems manufactured by other methods.
- Layers, coatings, and/or other structural elements may be described herein as being “on” (e.g., deposited on, or formed on), “over”, “above”, “adjacent”, “between”, etc. in relation to other structural elements. As used herein, these terms can mean directly and/or indirectly on, over, above, adjacent, between, etc., as a variety of intermediate layers and/or other structural elements can be interposed between structural elements recited herein. Similarly, structural elements recited herein, such as substrates or layers, can comprise a single component (e.g., a monolayer) or a multi-component structure (e.g., a laminate comprising multiple layers of the recited material, with or without layers of additional materials).
- the term "on” can denote that a structural element is attached, connected, joined or otherwise associated with another element in any manner maintaining the elements in proximity to one another.
- a structural element described as “on” another can be integral to, or separate/distinct from the other element, and the elements can be associated permanently, irreversibly, etc., or removably, separably, etc.
- Use of the terms “one or more,” “at least one,” and the like with respect to an object or element does not in any way indicate the absence of a potential plural arrangement of objects or elements in connection with instances in which such term(s) are not used.
- MEMS device refers generally to any such device at any stage of manufacture, including “prerelease” devices (e.g., devices having one or more sacrificial layers which are removed at subsequent processing steps) and “post-release” devices (e.g., devices comprising the structural elements of the operational device). While various embodiments may be described with reference to a particular structure or device, methods and products provided herein are not limited to the exemplified devices or any particular class of device, but rather are generally applicable to any compatible MEMS device.
- the MEMS device manufactured by methods provided herein is an interferometric modulator, such those illustrated in Figures 1- 9.
- methods provided herein are not limited to such devices, but rather may also be applicable to interferometric modulators having an "inverse" configuration, such as those described in U.S. Patent No. 6,650,455, "multi-state” interferometric modulators, such as those described in U.S. Patent Pub. No. 20040240032, and/or other suitable MEMS devices.
- Figures 9A-C are cross-sectional views illustrating several steps of an exemplary process for forming an array of interferometric modulators, each comprising a movable reflective layer 14 positioned over and spaced from an optical stack 16 via support posts 113, which are substantially perpendicular to the optical stack 16.
- the support posts 113, optical stack 16, and reflective layer 14 form the interferometric cavity 1 10.
- the cross- sections of Figures 9A-C show the formation of three interferometric modulators, 100(a), 100(b), and 100(c), which comprise a pixel in a color display device.
- the final configurations of the interferometric modulators formed by the exemplified process are shown in Figure 9C.
- interferometric cavities 110(a), 110(b), 110(c) of modulators 100(a), 100(b), and 100(c), respectively determine the nature of the interference and the resulting color of light reflected by each modulator.
- modulators 100(a), 100(b), and 100(c) have interferometric cavities 110(a), 110(b), and 110(c) of varying heights (e.g., distances between the movable reflective layer 14 and the optical stack 16 in the quiescent or relaxed state), with the heights of the cavities correlating with the wavelengths of light reflected.
- modulator 100(a) having the cavity with the largest height reflects red light
- modulator 100(b) with the cavity of intermediate height reflects green light
- modulator 100(c) with the cavity of the smallest height reflects blue light.
- Other color combinations are also possible, as well as the use of black and white pixels.
- an optical stack 16 is deposited on a transparent substrate 20,. as shown in Figure 9A.
- the optical stack 16 typically comprises several integrated or fused layers, including an electrode layer 112, formed on the substrate 20 by depositing an appropriate material, such as indium tin oxide (ITO), and a partially reflective layer 117 formed on top of the electrode layer 112 by depositing an appropriate material, such as chrome.
- ITO indium tin oxide
- the electrode and partially reflective layers 1 12, 117 may be patterned and etched to form electrode columns, rows and/or other useful shapes as required by the display design.
- the optical stack 16 also typically comprises a dielectric layer 118 formed over the patterned electrode 112 and partially reflective 117 layers.
- the dielectric layer 118 comprises an appropriate material, such as silicon oxide.
- the viewing surface of the transparent substrate 20 is on the 'bottom' of the substrate 20, i.e., the opposite side of the substrate 20 from the optical stack 16.
- Formation of the optical stack is followed by deposition of a first sacrificial layer 120, which may comprise several sublayers (e.g., sublayers 120(a), 120(b), and 120(c), described below).
- a etch stop layer (not shown), for example comprising AI2O 3 , is formed on the optical stack 16 prior to deposition of the first sacrificial layer 120 to protect the optical stack 16 from subsequent etching steps.
- the first sacrificial layer 120 occupies the space between the movable reflective layer 14 and the optical stack 16, and thus the thickness of the first sacrificial layer 120 corresponds to the dimensions of the interferometric cavity 110 in each interfero metric modulator 100.
- Figure 9A illustrates an exemplary process for creating first sacrificial layers 120 having variable thicknesses in each of the interferometric modulators 100(a), 100(b), and 100(c) by depositing, fabricating, and etching multiple sacrificial sub-layers 120(a), 120(b), and 120(c).
- the first sublayer 120(a) is deposited, masked and etched to form a portion of the first sacrificial layer of the left-most interferometric modulator 100(a).
- a second sacrificial sublayer 120(b) is deposited, patterned and etched to form a portion of the first sacrificial layers 120 of the interferometric modulators 100(a) and 100(b).
- a third sacrificial sub-layer 120(c) is deposited to form a portion of the first sacrificial layers 120 of the interferometric modulators 100(a), 100(b), and 100(c).
- the third sublayer 120(c) need not be patterned, since its thickness is included in all three of the interferometric modulators 100(a), 100(b), and 100(c) comprising the pixel.
- the first sacrificial layer 120 of the left-most interferometric modulator 100(a) comprises the combined thickness of sublayers 120(a), 120(b), and 120(c)
- the first sacrificial layer 120 of the middle interferometric modulator 100(b) comprises the combined thickness of sublayers 120(b) and 120(c)
- the first sacrificial layer 120 of the right-most interferometric modulator 100(c) comprises the thickness of sublayer 120(c).
- interferometric modulators having a wide range of cavity dimensions, depending for example on the desired optical and electromechanical properties of the interferometric modulator.
- adjacent interferometric modulators comprising a pixel within a display device can have interferometric cavity dimensions corresponding to the combined thicknesses of one, two, three or more sacrificial sublayers, such as the sublayers 120(a), 120(b), and 120(c) in Figures 9A-C.
- the sublayers comprising a sacrificial layer may have differing dimensions, allowing for additional variability in the total thicknesses of sacrificial layers comprised of such sublayers.
- the combined thickness of the one or more sublayer(s) forming the first sacrificial layer 120 can be wide ranging.
- the sacrificial layer 120 has a combined thickness of from about 500 Angstroms to about 50,000 Angstroms, and more preferably from about several thousand Angstroms to about 10,000 Angstroms.
- a metallic layer is deposited on the first sacrificial layer 120 (comprising one, two or three sub-layers), and is subsequently patterned and etched to form the movable reflective layer 14 of each interferometric modulator.
- a second etch stop layer (not shown) is deposited between the first sacrificial layer 120 and the metallic layer (which subsequently forms reflective layer 14) to protect the first sacrificial layer 120 during the pattern etch of the metallic layer.
- a second sacrificial layer 122 is then deposited (and optionally planarized) on reflective layers 14 and the spaces between the reflective layers 14 (on first sacrificial layer 120).
- the second sacrificial layer 122 is subsequently masked and etched to form cavities extending through the second sacrificial layer to the optical stack 16 (through the first sacrificial layer), in which a structural material (e.g., a polymer, metal, or oxide) is deposited to form support posts 113.
- Support posts 113 are typically of a uniform height, achieved, for example by a planarization step (e.g., using chemical-mechanical planarization (CMP)) (not shown).
- CMP chemical-mechanical planarization
- connections 36 between the reflective layers 14 and the deformable layers 34 are also formed.
- the deformable layer is then deposited, patterned, and etched, for example as shown in Figures 8A and 8B.
- the deformable layer 34 forms an elastic connection between the support posts 113 and the movable reflective layers 14.
- a third sacrificial layer (not shown) is optionally deposited over the deformable layer 34. Etching of the sacrificial layers 120 and 122 "releases" the interferometric modulators so that the movable reflective layers 14 are suspended over the optical stack 16 by deformable layers 34, as illustrated in Figure 9C.
- etching of one or more sacrificial layers of a MEMS device comprises exposing the sacrificial layer(s) to a gas phase chemical etchant in the presence of an ionized gas.
- a gas phase chemical etchant in the presence of an ionized gas.
- one or more surfaces of a MEMS device that were in contact with, or close proximity to, a sacrificial layer have a reduced level of fixed electrical charge.
- etching of the sacrificial layer 120 prevents charging of surfaces of the movable reflective layer 14, optical stack 16, and/or support posts 113 exposed to the interferometric cavity 110.
- surface charges can also be reduced on one or more surfaces exposed to the second sacrificial layer 122, including the upper surface of movable reflective layer 14, the lower surface of deformable layer 34, and/or surfaces of the support posts 113.
- methods disclosed herein prevent surface charges and their deleterious effects without the need for substantially departing from established manufacturing methods.
- the reduction of surface charges on one or more surfaces exposed to the interferometric cavity eliminates additional processing steps designed to eliminate, reduce, or compensate for surface charges, such as the deposition of additional layers or coatings.
- the selection of the sacrificial material, the gas phase chemical etchant, and the ionized gas depends on a variety of factors, including the methods and conditions used to deposit the sacrificial materials (which can effect their physical and/or chemical properties), and the etching conditions used to remove them.
- the etching conditions used to remove them are etchable under certain conditions, and that the description herein of a material as selectively etchable or etch resistant, or of an etchant and/or ionized gas as being non-etching, is in comparison with other materials or gases under particular conditions.
- sacrificial materials such as etchants, and/or ionized gases are determined empirically, under controlled conditions.
- etchant-sacrificial material combinations useful for a variety of purposes are known in the art and/or are commercially available.
- the gas phase etchant, ionized gas, and sacrificial material(s) used in methods provided herein are generally selected so that the sacrificial materials are selectively etchable against the structural materials and/or the substrate of the MEMS device, using the chemical etching methods provided herein.
- the gas phase chemical etchant is substantially non-etching against the structural materials and/or the substrate.
- the gas phase chemical etchant etches the sacrificial materials at a rate greater than about 5X, preferably greater than about 10X, and more preferably greater than about 4OX the rate of the structural materials and/or the substrate.
- the gas phase chemical etchant is substantially non- etching against the structural materials and/or the substrate in the presence of the ionized gas.
- the ionized gas is substantially non- etching against the sacrificial materials.
- the ionized gas etches the sacrificial materials at a rate that is about 1OX less or lesser, more preferably about 4OX less or lesser, and even more preferably about IOOX less or lesser than the rate of etching by the gas phase chemical etchant.
- using an ionized gas that is substantially non-etching against the sacrificial materials allows the MEMS device to be exposed to the ionized gas for extended periods during the manufacturing process.
- the MEMS device is exposed to the ionized gas for a period of time prior to introduction of the chemical etchant, as well as throughout the etching process, to prevent formation of charged species in the absence of the ionized gas.
- the MEMS device is exposed to the ionized gas prior to, during, and/or after the deposition of one or more sacrificial layers, for example to prevent triboelectric charge formation due to contacts between the sacrificial materials and the structural materials and/or the substrate.
- the use of an ionized gas that is substantially non-etching allows methods described herein to be carried out without the need to significantly alter established manufacturing protocols.
- one or more deposition and/or etching steps in the manufacture of a MEMS device is/are carried out in the presence of a substantially non-etching ionized gas under the same or substantially similar conditions used in the absence of the ionized gas.
- the degree of charge formation is related to the nature and extent of contacts between the sacrificial and structural materials. For example, in various embodiments, charge formation is affected by the area and duration of contact between surfaces, the rate and direction of separation, humidity, and/or "contact resistance" at the surface-surface interface.
- the degree of triboelectric charging is minimized by methods provided herein by etching under conditions in which the gas phase etchant spontaneously etches the sacrificial material via chemical processes (e.g., by converting the sacrificial material to volatile chemical species that are removed from the reaction chamber along with other etching byproducts), without substantial etching by physical processes (e.g., ion bombardment, sputtering, etc.).
- the sacrificial layer is preferably etched in a substantially isotropic (non-directional) manner, consistent with purely chemical etching processes.
- chemical etching is carried out without substantial physical etching by performing the etching under substantially non-energized conditions.
- etching conditions are preferably of sufficiently low energy to maintain the chemical etchant in the gaseous phase (e.g., without conversion to a plasma) throughout the etching process and any subsequent steps in which the etchant contacts the MEMS device.
- the etching process is carried out without exposing the gas phase etchant to energizing conditions, such as elevated temperatures, elevated pressures, radiation (e.g., UV or other light), electromagnetic energy, and/or other conditions capable of energizing the gaseous etchant.
- etching according to methods provided herein is performed at a pressure of less than about 100 torr, more preferably less than about 50 torr, and even more preferably less than about 10 torr; at a temperature of less than about 200 0 C, more preferably less than about 150 0 C, and even more preferably less than about 100 0 C; and/or for a duration of less than about 10 minutes, more preferably less than about 5 minutes, and even more preferably less than about 1 minute.
- the gas phase chemical etchant is a noble halide- fiuoride gas etchant, such as a helium-, neon-, argon-, krypton-, xenon-, or radon-fluoride gas.
- the etchant is KrF ⁇ , XeF2, XeF 4 , or XeF ⁇ , with XeF 2 being particularly preferred.
- the gas phase chemical etchant is a halogen-fluoride gas, such as BrF x (e.g., BrF, BrF 3 , or BrF 5 ), ClF x (e.g., ClF, ClF 3 , or ClF 5 ), IF x (e.g., IF 5 or IF7), XeF x (e.g., XeF 2 ), or combinations thereof.
- the gas phase chemical etchant comprises a gas phase acid, such as HF, HBr, or HI, a chlorine or bromine gas, such as Cl 2 , BrI 3 , BrCl 3 or AICl 3 , or any combination of the above etchants.
- the etchant further comprises an additional gaseous component (e.g., a diluent).
- an additional gaseous component e.g., a diluent
- the gas phase chemical etchant can be combined with N 2 gas or another inert gas, such as Ar, Xe, He, and the like.
- the sacrificial material may comprise polycrystalline silicon, amorphous silicon, silicon oxide, silicon nitride, aluminum, titanium, zirconium, hafnium, vanadium, tantalum, chromium, molybdenum, tungsten, manganese, various polymers (e.g., organic polymers), and/or combinations thereof.
- the sacrificial material comprises a sacrificial layer, such as the sacrificial layer 120 in Figure 9B, which can be formed by a chemical process, such as chemical vapor deposition (CVD) or low pressure CVD (LPCVD), or by other processes, such as physical vapor deposition (PVD).
- CVD chemical vapor deposition
- LPCVD low pressure CVD
- PVD physical vapor deposition
- the sacrificial layer 120 comprises molybdenum, silicon, titanium or tungsten, and is etched to release the interferometric modulator using a noble halide-fluoride gas etchant, such as XeF 2 .
- etching is monitored, for example by measuring the reflectivity of the device, or the release of etching byproducts. In other embodiments, the etching is allowed to proceed for a fixed duration, for example a duration previously determined to provide a desirable degree of etching and/or selectivity.
- the etching rate of a layer of sacrificial material can vary based on the thickness of the layer, the spacing and orientation of surrounding layers, the direction of etching, and other factors.
- the amount of a gas phase etchant used to etch a sacrificial layer is an amount sufficient to etch the sacrificial material at a desired rate, for example at least 1 nm/sec, and more preferably at least 5 nm/sec, and even more preferably at least 10 nm/sec or more.
- the amount of ionized gas used in methods described herein is between about 1% and about 99% by weight of the etchant-ionized gas mixture, and preferably less than about 50%, or more preferably less than about 25%, or even more preferably less than about 10% by weight of the etchant-ionized gas mixture.
- Skilled artisans can readily determine etchant-ionized gas ratios, etching conditions, and the like for particular MEMS devices by routine experimentation, in light of the teachings provided herein.
- the ionized gas is an ionized inert gas, such as N 2 , Ar, Xe, He, and the like.
- the ionized gas is substantially non-reactive (e.g., substantially non-etching) against sacrificial and/or structural materials comprising the MEMS device.
- the ionized gas is substantially non- etching against such materials in the presence of the gas phase chemical etchant.
- the ionized gas preferably comprises both positively and negatively charged molecules, in order to neutralize both types of charged species during the etching process.
- the ionized gas may be comprised substantially or wholly of either positively or negatively charged molecules, for example where ionized gases of a certain composition have been previously established as being effective in reducing surface charges.
- an inert gas is ionized by a "corona discharge" method, wherein the gas is exposed to needle shaped electrodes that ionize the gas molecules upon application of an ionizing voltage to the electrodes.
- a negative voltage is applied to one or more electrodes, producing primarily positive ions, whereas in other embodiments a positive voltage is applied, producing primarily negative ions.
- Mixtures of positive and negative ions can be produced by mixing negative and positive ionized species produced as described above, and/or by applying an alternating current to a single electrode, preferably with a temporal pulse-pause protocol designed to maximize the yield of both species (e.g., by minimizing recombination of charged species).
- ionized species are directed to an etching chamber or other microenvironment containing a MEMS device by applying vacuum, pressure, and/or electromagnetic forces, and/or by other methods known in the art.
- the ionized gas is introduced to the etching chamber using an ion gun, a variety of which are known in the art and commercially available.
- the inert gas has a low "ionization energy," such that it is readily ionized under relatively low-energy conditions, for example at ambient temperatures and pressures.
- N 2 and Ar gases are particularly preferred in some embodiments.
- the ion source is placed in close proximity to the area targeted for charge reduction, since gases having a low ionization energy typically recombine readily to form uncharged species.
- ionized gas molecules are accelerated towards the target area, for example using an ion gun, so that the ionized molecules reside in the etching chamber for a substantial portion of their 'half- life'.
- MEMS devices can be exposed to the gas phase chemical etchant and the ionized gas in a variety of ways, depending on the particular device being manufactured, the equipment and materials being utilized, etc.
- a number of methods and apparatuses are known in the semiconductor, MEMS, and integrated circuit fields for controlling the microenvironment surrounding a device during one or more steps of its manufacture.
- various steps in the manufacture of a MEMS device can be carried out in separate, sealed microenvironments within which one or more specific processing steps are carried out (e.g., processing "tools").
- etching according to methods provided herein is carried out in a sealed etching chamber, which allows gases and particulate matter to be introduced and removed from the chamber in a controlled manner, and at a controlled rate.
- the gas phase etchant is preferably introduced to the etching chamber in a manner that minimizes its exposure to sacrificial materials in the absence of the ionized gas.
- the ionized gas is dispersed throughout the chamber prior to introducing the gas phase etchant.
- the ionized gas can be continuously circulated through the etching chamber and the gas phase etchant can be bled into the circulation of the ionized gas.
- the gas phase etchant and the ionized gas are introduced to the chamber together (e.g., each gas can flow from a separate source into a common conduit, which in turn carries the mixture to the etching chamber), or are combined in the etching chamber (e.g., each gas can be introduced into the chamber from a separate source).
- the etchant is XeF 2 , which can be produced by sublimation from solid crystals, for example by maintaining the crystals at room temperature.
- Figure 10 illustrates an exemplary etching apparatus 1000, which includes a reaction chamber 1010 having a stage 1012 on which a substrate to be etched 1014 is mounted.
- the stage 1012 is electrically grounded to prevent surface charge formation and to discharge existing surface charges.
- An ion species source 1020 supplies a source gas (e.g., argon) 1022 to ion gun 1024, which ionizes the source gas 1022 and delivers it as an ion beam 1030 into the reaction chamber 1010.
- a gas supply valve 1026 controls the flow of the source gas 1022 from the ion species source 1020, under the control of the source gas electrical and flow controller 1028.
- the source gas controller 1028 also controls the supply of electrical power to the ion gun 1024.
- the ion gun 1024 generates the ion beam 1030, comprising the ionized gas 1022, and directs it to the exposed surfaces of the etching substrate 1014.
- An etchant source 1040 supplies one or more etching gases into the reaction chamber 1010, under the control of etching gas supply valve 1032a and 1032b and an etching gas flow controller 1034.
- the reaction chamber 1010 is connected to a discharge pump (not shown), which applies vacuum pressure to the reaction chamber 1010 under the control of the discharge pump valve 1050, to facilitate removal of etch by-products.
- the reaction chamber 1010 is also connected to an exchange chamber 1060, which isolates the etching chamber 1010 from the external environment during the loading and unloading of the chamber 1010 with etching substrates (e.g., 1014).
- etching substrates e.g., 1014.
- ion species sources ion guns, etching gas sources, controllers, and the like are well known in the art, and can be obtained from commercial sources.
- Figure 11 illustrates an etching apparatus 1100 similar to that shown in Figure 10, having multiple ion guns 1120 to facilitate the delivery and/or distribution of the ionized gas within the etching chamber 1110 to allow simultaneous processing of multiple substrates 1130.
- Figure 12 illustrates an etching chamber 1200 within an apparatus similar to those shown in Figures 10 and 11, wherein the chamber 1200 comprises a first sub- chamber 1210a, in which the ionized gas is generated, and a second sub-chamber 1210b, in which the substrate to be etched 1240, residing on electrically grounded stage 1242, is exposed to the ionized gas.
- an inert gas e.g., argon
- field generator 1220 converting the inert gas into a plasma which yields the ionized gas.
- the generation of the ionized gas within sub-chamber 1210a can be controlled independently of the flow of the ionized gas to the etching substrate 1240.
- the production of the ionized gas can be controlled by varying the voltage produced by field generator 1220 and/or the voltage applied to the cut-off grids 1224a and 1224b.
- the application of a voltage to electrodes 1222a and 1222b accelerates charged particles within sub-chamber 1210a, which collide with and ionize molecules of the inert gas to form a plasma.
- the generation of gas ions can be controlled by adjusting the voltage applied to the cut-off grids 1224a and 1224b. This level of control is independent of the control over the flow of the ionized gas into sub-chamber 1210b, which can be controlled by varying the voltage applied to the electrostatic acceleration grid 1230 separating sub- chambers 1210a and 1210b.
- Methods provided herein are useful for reducing surface charges on any surface of a MEMS device that contacts a sacrificial layer during the manufacturing process.
- etching the sacrificial layers 120 and 122 in the presence of an ionized gas can reduce surface charges on one or more surfaces exposed to the interferometric cavity 110, including the reflective surface of the movable reflective layer 14, the exposed surface of the optical stack 16, and/or one or more surfaces behind the reflective layer 14 (i.e., opposite the viewing surface).
- methods provided herein reduce surface charges on one or more surfaces (“optically active" surfaces) within the optical path of an interferometric modulator.
- interferometric modulators typically reflect light from the movable reflective layer 14 that interferes in various degrees with light reflected by the optical stack 16, which is partially reflective and partially transmissive to incident light.
- the exposed surface of the optical stack 16 and/or the reflective surface of movable reflective layer 14 have certain optical properties, such as the ability to reflect, absorb, and/or transmit particular wavelengths of light, that are consistent with the desired optical response of the interferometric modulator.
- the accumulation of charges and/or particulate contaminants on one or more optically active surfaces of an interferometric modulator or other MEMS device can interfere with image fidelity, resolution, contrast, and/or other aspects of the optical performance of the device.
- compensating for surface charges on optically active surfaces can be difficult, since materials and structural configurations are limited by the optical requirements of the device.
- the prevention of charge formation on one or more optically active surfaces can substantially improve the performance of MEMS devices.
- methods provided herein reduce surfaces charges on one or more surfaces that are movable during the operation of a MEMS device ("mechanically active" surfaces).
- charged particles can adhere to and locally deform the mechanical layer of an interferometric modulator (e.g., the layer 34 in Figure 9B), thereby altering one or more of its mechanical properties, such as the strain energy and/or the restoring force.
- the mechanical properties of the deformable layer are important for determining actuation voltages, the "hysteresis window,” and other operational parameters of interferometric modulators.
- the prevention of charge formation on mechanically-active layers, such as the layer 34 can significantly improve the performance of interferometric modulators and/or other MEMS devices.
- methods provided herein reduce surfaces charges on one or more structural elements comprising an insulating material.
- the optical stack 16 in Figure 9B comprises an insulating layer exposed to the interferometric cavity 110. Because insulating layers are typically not susceptible to discharge via grounding, surface charges that develop on insulating layers become static surface charges, which can have a variety of deleterious effects, as described herein.
- etching sacrificial materials, such as those comprising the sacrificial layer 120, with a gas phase chemical etchant in the presence of an ionized gas prevents the formation of surface charges on one or more insulating layers of a MEMS device.
- MEMS devices produced by methods described herein are provided, as well as systems incorporating such devices.
- MEMS devices with reduced amounts of surface charges can exhibit a variety of improved characteristics, including but not limited to, reduced corrosion, erosion, and/or wear, better optical and/or mechanical properties, improved adherence to manufacturing tolerances, and other desirable properties.
Abstract
Description
Claims
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JP2009522786A JP2009545881A (en) | 2006-08-02 | 2007-07-23 | Method for reducing surface charge during the manufacture of microelectromechanical system devices |
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US7763546B2 (en) | 2010-07-27 |
CN101511722A (en) | 2009-08-19 |
US20080029481A1 (en) | 2008-02-07 |
JP2009545881A (en) | 2009-12-24 |
KR20090042824A (en) | 2009-04-30 |
WO2008016516A3 (en) | 2008-05-15 |
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