WO2008027412A3 - Method and apparatus to improve filter characteristics of optical filters - Google Patents

Method and apparatus to improve filter characteristics of optical filters Download PDF

Info

Publication number
WO2008027412A3
WO2008027412A3 PCT/US2007/018964 US2007018964W WO2008027412A3 WO 2008027412 A3 WO2008027412 A3 WO 2008027412A3 US 2007018964 W US2007018964 W US 2007018964W WO 2008027412 A3 WO2008027412 A3 WO 2008027412A3
Authority
WO
WIPO (PCT)
Prior art keywords
sub
filter characteristics
optical filters
wavelength elements
improve filter
Prior art date
Application number
PCT/US2007/018964
Other languages
French (fr)
Other versions
WO2008027412A2 (en
Inventor
Ulrich C Boettiger
Original Assignee
Micron Technology Inc
Ulrich C Boettiger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Ulrich C Boettiger filed Critical Micron Technology Inc
Publication of WO2008027412A2 publication Critical patent/WO2008027412A2/en
Publication of WO2008027412A3 publication Critical patent/WO2008027412A3/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Abstract

An optical filter structure for an imager which has customized sub- wavelength elements used to maintain the filter characteristics accordingly across a photo-conversion device to optimize the structure for the angle of incidence as it changes across the imager photo-conversion device. In particular, the layout (e.g., grating period among other parameters) of the sub-wavelength elements used in the structure design are customized to change with the angle of incidence of the optics used to project the image. The sub-wavelength elements are typically built by high resolution lithographic processes such as optical or imprint lithography.
PCT/US2007/018964 2006-08-31 2007-08-29 Method and apparatus to improve filter characteristics of optical filters WO2008027412A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/513,264 US7965444B2 (en) 2006-08-31 2006-08-31 Method and apparatus to improve filter characteristics of optical filters
US11/513,264 2006-08-31

Publications (2)

Publication Number Publication Date
WO2008027412A2 WO2008027412A2 (en) 2008-03-06
WO2008027412A3 true WO2008027412A3 (en) 2008-06-19

Family

ID=38871894

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/018964 WO2008027412A2 (en) 2006-08-31 2007-08-29 Method and apparatus to improve filter characteristics of optical filters

Country Status (3)

Country Link
US (1) US7965444B2 (en)
TW (1) TWI361907B (en)
WO (1) WO2008027412A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109696794B (en) * 2018-12-14 2021-04-13 烟台市谛源光科有限公司 Manufacturing method of ultra-short-focus light-resistant structure

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5676929B2 (en) * 2010-06-11 2015-02-25 キヤノン株式会社 Diffractive optical element, optical system and optical instrument
JP5676928B2 (en) 2010-06-11 2015-02-25 キヤノン株式会社 Diffractive optical element, optical system, and optical instrument
JP5676930B2 (en) * 2010-06-11 2015-02-25 キヤノン株式会社 Diffractive optical element, optical system and optical instrument
JP5777353B2 (en) * 2010-06-11 2015-09-09 キヤノン株式会社 Diffractive optical element, optical system, and optical instrument
WO2012079239A1 (en) * 2010-12-16 2012-06-21 苏州苏大维格光电科技股份有限公司 Color filter
US8816264B2 (en) * 2012-07-31 2014-08-26 Omnivision Technologies, Inc. CMOS image sensor switch circuit for reduced charge injection
US9110240B2 (en) * 2013-03-05 2015-08-18 Rambus Inc. Phase gratings with odd symmetry for high-resolution lensed and lensless optical sensing
FR3009889B1 (en) 2013-08-23 2016-12-23 Commissariat Energie Atomique QUANTUM HIGH PERFORMANCE PHOTODIODE
FR3009888B1 (en) * 2013-08-23 2015-09-18 Commissariat Energie Atomique SPAD PHOTODIODE WITH HIGH QUANTUM EFFICIENCY
CN103760630A (en) * 2014-02-21 2014-04-30 哈尔滨工业大学 Infrared double-waveband mosaic array optical filter of sub-wavelength grating structure
US10835193B2 (en) 2016-09-08 2020-11-17 Koninklijke Philips N.V. Source grating for X-ray imaging
CN106773256A (en) * 2017-01-03 2017-05-31 京东方科技集团股份有限公司 Color membrane substrates, array base palte and display device
CN108666328B (en) * 2017-04-01 2020-05-05 奇景光电股份有限公司 Image sensor
CN108549125B (en) * 2018-04-28 2021-08-06 湖北华鑫光电有限公司 Multifunctional optical filter and control method thereof
CN108957839B (en) * 2018-08-09 2022-09-30 京东方科技集团股份有限公司 Display device, display panel, color film substrate and color film
CN110034145B (en) * 2019-04-23 2021-09-14 德淮半导体有限公司 Image sensor and forming method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701005A (en) * 1995-06-19 1997-12-23 Eastman Kodak Company Color separating diffractive optical array and image sensor
WO2005008781A1 (en) * 2003-07-21 2005-01-27 Optomecha Co. Ltd. Image sensor and method for fabricating the same
EP1840968A1 (en) * 2006-03-30 2007-10-03 Visera Technologies Company Ltd. Image sensing device and manufacture method thereof

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173765A (en) * 1978-05-26 1979-11-06 Eastman Kodak Company V-MOS imaging array
US4708436A (en) * 1985-07-12 1987-11-24 Rca Corporation Optical imager with diffractive lenticular array
US4993032A (en) * 1989-12-28 1991-02-12 General Dynamics Corp., Electronics Divn. Monolithic temperature stabilized optical tuning circuit for channel separation in WDM systems utilizing tunable lasers
US5076687A (en) * 1990-08-28 1991-12-31 Massachusetts Institute Of Technology Optical ranging apparatus
US5742373A (en) * 1995-10-13 1998-04-21 Massachusetts Institute Of Technology Color microdisplays and methods of manufacturing same
US6174648B1 (en) * 1997-07-08 2001-01-16 Oki Electric Industry Co., Ltd. Optical filter fabrication method using fiber holder with spiral groove and phase mask with spiral diffraction grating
US6704149B2 (en) * 1998-04-21 2004-03-09 Minolta Co., Ltd. Lens optical system
EP0990927A3 (en) * 1998-09-28 2000-12-13 Sharp Kabushiki Kaisha Diffraction grating having multiple gratings with different cycles for generating multiple beams and optical pickup using such diffraction grating
US6140630A (en) * 1998-10-14 2000-10-31 Micron Technology, Inc. Vcc pump for CMOS imagers
US6177333B1 (en) * 1999-01-14 2001-01-23 Micron Technology, Inc. Method for making a trench isolation for semiconductor devices
US6358793B1 (en) * 1999-02-26 2002-03-19 Micron Technology, Inc. Method for localized masking for semiconductor structure development
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6326652B1 (en) * 1999-06-18 2001-12-04 Micron Technology, Inc., CMOS imager with a self-aligned buried contact
US6362513B2 (en) * 1999-07-08 2002-03-26 Intel Corporation Conformal color filter layer above microlens structures in an image sensor die
US6204524B1 (en) * 1999-07-14 2001-03-20 Micron Technology, Inc. CMOS imager with storage capacitor
US6333205B1 (en) * 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
JP3840058B2 (en) * 2000-04-07 2006-11-01 キヤノン株式会社 Microlens, solid-state imaging device and manufacturing method thereof
US6819833B1 (en) * 2000-06-29 2004-11-16 Avanex Corporation In-fiber continuously chirped gain flattening filters and method
US6823111B2 (en) * 2000-07-31 2004-11-23 Spectalis Corp. Optical waveguide filters
US7154546B1 (en) * 2000-08-07 2006-12-26 Micron Technology, Inc. Pixel optimization for color
US6823091B2 (en) * 2001-01-12 2004-11-23 Micron Technology, Inc. Pixel resampling system and method
US6643429B2 (en) * 2001-06-07 2003-11-04 Nortel Networks Limited Dispersion compensation apparatus and method utilising sampled Bragg gratings
US7050649B2 (en) * 2001-07-23 2006-05-23 Micron Technology, Inc. Suppression of ringing artifacts during image resizing
US6795587B2 (en) * 2001-07-23 2004-09-21 Micron Technology, Inc. Image resizing using short asymmetric FIR filters
US6536086B2 (en) * 2001-08-03 2003-03-25 Kun-Chung Liu Double-bow shoe lace device
US6993207B1 (en) * 2001-10-05 2006-01-31 Micron Technology, Inc. Method and apparatus for electronic image processing
US6882776B2 (en) * 2001-11-06 2005-04-19 Intel Corporation Method and apparatus of a semiconductor-based gain equalization device for optical amplifiers
US6738171B1 (en) * 2001-11-21 2004-05-18 Micron Technology, Inc. Color filter array and microlens array having holographic optical elements
US6783900B2 (en) * 2002-05-13 2004-08-31 Micron Technology, Inc. Color filter imaging array and method of formation
JP4310080B2 (en) * 2002-06-17 2009-08-05 キヤノン株式会社 Diffractive optical element and optical system and optical apparatus provided with the same
US7110598B2 (en) * 2002-08-28 2006-09-19 Micron Technology, Inc. Automatic color constancy for image sensors
US6818962B2 (en) * 2002-10-25 2004-11-16 Omnivision International Holding Ltd Image sensor having integrated thin film infrared filter
KR20040060509A (en) * 2002-12-30 2004-07-06 동부전자 주식회사 Cmos image sensor
US7218817B2 (en) * 2003-06-02 2007-05-15 Board Of Regents, The University Of Texas System Nonlinear optical guided mode resonance filter
TWM249381U (en) * 2003-12-19 2004-11-01 Hon Hai Prec Ind Co Ltd Image sensor
KR100629866B1 (en) * 2003-12-23 2006-09-29 엘지전자 주식회사 Fabrication method of microlens array with controlled conic coefficient
WO2005076361A1 (en) * 2004-02-03 2005-08-18 Matsushita Electric Industrial Co., Ltd. Solid state imaging device, process for fabricating the same and camera
JP2005283435A (en) * 2004-03-30 2005-10-13 Japan Aviation Electronics Industry Ltd Infrared sensor
US7250591B2 (en) * 2004-06-01 2007-07-31 Micron Technology, Inc. Photonic crystal-based filter for use in an image sensor
US7068432B2 (en) * 2004-07-27 2006-06-27 Micron Technology, Inc. Controlling lens shape in a microlens array
JP4645595B2 (en) * 2004-09-10 2011-03-09 住友電気工業株式会社 Translucent display panel and manufacturing method thereof
GB2418995B (en) * 2004-09-29 2006-08-16 Bookham Technology Plc Apodised binary grating
US20060102827A1 (en) * 2004-11-17 2006-05-18 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
US20060255372A1 (en) * 2005-05-16 2006-11-16 Micron Technology, Inc. Color pixels with anti-blooming isolation and method of formation
US7808063B2 (en) * 2005-05-26 2010-10-05 Micron Technology, Inc. Structure and method for FPN reduction in imaging devices
US7470556B2 (en) * 2005-06-28 2008-12-30 Aptina Imaging Corporation Process for creating tilted microlens
US20070001094A1 (en) * 2005-06-29 2007-01-04 Micron Technology, Inc. Infrared filter for imagers
US20070151558A1 (en) * 2005-12-22 2007-07-05 Solbeam, Inc. Variable apex angle prism
US7714368B2 (en) * 2006-06-26 2010-05-11 Aptina Imaging Corporation Method and apparatus providing imager pixel array with grating structure and imager device containing the same
KR100791842B1 (en) * 2006-07-25 2008-01-07 삼성전자주식회사 Image sensor having no shift of microlens and method thereof
US7737394B2 (en) * 2006-08-31 2010-06-15 Micron Technology, Inc. Ambient infrared detection in solid state sensors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701005A (en) * 1995-06-19 1997-12-23 Eastman Kodak Company Color separating diffractive optical array and image sensor
WO2005008781A1 (en) * 2003-07-21 2005-01-27 Optomecha Co. Ltd. Image sensor and method for fabricating the same
EP1840968A1 (en) * 2006-03-30 2007-10-03 Visera Technologies Company Ltd. Image sensing device and manufacture method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109696794B (en) * 2018-12-14 2021-04-13 烟台市谛源光科有限公司 Manufacturing method of ultra-short-focus light-resistant structure

Also Published As

Publication number Publication date
US20080121781A1 (en) 2008-05-29
US7965444B2 (en) 2011-06-21
TW200817731A (en) 2008-04-16
TWI361907B (en) 2012-04-11
WO2008027412A2 (en) 2008-03-06

Similar Documents

Publication Publication Date Title
WO2008027412A3 (en) Method and apparatus to improve filter characteristics of optical filters
WO2008064859A3 (en) Optical system with an exchangeable, manipulable correction arrangement for reducing image aberrations
TW200717025A (en) Microlithography projection optical system, microlithographic tool comprising such an optical system, method for microlithographic production of microstructured components using such a microlithographic tool, microstructured component being produced by s
IN2014CN02916A (en)
TW200745629A (en) Method and apparatus defining a color filter array for an image sensor
NL2003256A1 (en) Optical element for a lithographic apparatus, lithographic apparatus including such an optical element and method for making the optical element.
TW200705133A (en) Lithographic apparatus and device manufacturing method
WO2012034995A3 (en) Imaging optical system
WO2008105531A1 (en) Pellicle frame apparatus, mask, exposure method, exposure apparatus and device manufacturing method
EP1586949A3 (en) Exposure apparatus and exposure method using EUV light
WO2013010976A3 (en) Method and apparatus for analyzing and for removing a defect of an euv photomask
EP2510399A4 (en) Black curable composition, light-shielding color filter, light-shielding film and method for manufacturing the same, wafer level lens, and solid-state imaging device
NL1036349A1 (en) Scanning EUV interference imaging for extremely high resolution patterning.
SG134294A1 (en) Lithographic apparatus, device manufacturing method and exchangeable optical element
WO2005116597A3 (en) Microarray scanning
DE602004011860D1 (en) Method and apparatus for model-based placement of phase-balanced optical lithography assist structures with resolution limits below the exposure wavelength
WO2008057308A3 (en) Methods and apparatus for in-loop de-artifact filtering
EP2533198A4 (en) Imaging device and method, and image processing method for imaging device
WO2008085778A3 (en) Configurable pixel array system and method
WO2011085100A3 (en) System and method for data reading with low profile arrangement
WO2008051189A3 (en) Method and system of array imaging
TW200741818A (en) Exposure apparatus and device manufacturing method
ATE477674T1 (en) OPTICAL AND DIGITAL ZOOMING FOR AN IMAGING DEVICE
EP2579100A3 (en) Inspection apparatus, lithographic apparatus, and device manufacturing method
EP2087510A4 (en) Optical element, exposure unit utilizing the same and process for device production

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07811590

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 07811590

Country of ref document: EP

Kind code of ref document: A2