WO2008048299A3 - Method of synthesizing nanometer scale objects and devices resulting therefrom - Google Patents

Method of synthesizing nanometer scale objects and devices resulting therefrom Download PDF

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Publication number
WO2008048299A3
WO2008048299A3 PCT/US2006/045405 US2006045405W WO2008048299A3 WO 2008048299 A3 WO2008048299 A3 WO 2008048299A3 US 2006045405 W US2006045405 W US 2006045405W WO 2008048299 A3 WO2008048299 A3 WO 2008048299A3
Authority
WO
WIPO (PCT)
Prior art keywords
devices
nanometer scale
scale objects
applications
methods
Prior art date
Application number
PCT/US2006/045405
Other languages
French (fr)
Other versions
WO2008048299A2 (en
Inventor
Mark L Jenson
Original Assignee
Solumen Corp
Mark L Jenson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solumen Corp, Mark L Jenson filed Critical Solumen Corp
Publication of WO2008048299A2 publication Critical patent/WO2008048299A2/en
Publication of WO2008048299A3 publication Critical patent/WO2008048299A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material

Abstract

Methods and devices are described that allow the engineering of a wide variety of nanometer scale objects. These methods and devices use the free energies of materials along with deposition conditions to synthesize a wide array of nanometer scale objects including, but not limited to, particles, quantum dots, clusters or crystals. By appropriate selection of materials and fabrication conditions, the material being deposited on a substrate can be caused to coalesce into islands whose shape and size can be engineered to accomplish a specific desired function. Examples of devices fabricated from this method include, but are not limited to, electronic switching devices, optical switching devices, conjugate formation for biomedical applications, laser and LED applications, power and energy systems and solid state lighting applications.
PCT/US2006/045405 2005-11-22 2006-11-22 Method of synthesizing nanometer scale objects and devices resulting therefrom WO2008048299A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73874005P 2005-11-22 2005-11-22
US60/738,740 2005-11-22

Publications (2)

Publication Number Publication Date
WO2008048299A2 WO2008048299A2 (en) 2008-04-24
WO2008048299A3 true WO2008048299A3 (en) 2008-10-09

Family

ID=39314538

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/045405 WO2008048299A2 (en) 2005-11-22 2006-11-22 Method of synthesizing nanometer scale objects and devices resulting therefrom

Country Status (1)

Country Link
WO (1) WO2008048299A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6269846B1 (en) * 1998-01-13 2001-08-07 Genetic Microsystems, Inc. Depositing fluid specimens on substrates, resulting ordered arrays, techniques for deposition of arrays
US20040238816A1 (en) * 2003-06-02 2004-12-02 Takanori Tano Layered structure and electron device that uses such a layered structure, fabrication process thereof, electron device array and dispaly apparatus
US20050201963A1 (en) * 2001-09-05 2005-09-15 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
US20050230678A1 (en) * 2004-04-14 2005-10-20 Yong Cao Organic electronic device comprising conductive members and processes for forming and using the organic electronic device
US20050236614A1 (en) * 2004-04-22 2005-10-27 Parker Ian D Processes for forming organic layers, organic electronic devices, and transistors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6269846B1 (en) * 1998-01-13 2001-08-07 Genetic Microsystems, Inc. Depositing fluid specimens on substrates, resulting ordered arrays, techniques for deposition of arrays
US20050201963A1 (en) * 2001-09-05 2005-09-15 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
US20040238816A1 (en) * 2003-06-02 2004-12-02 Takanori Tano Layered structure and electron device that uses such a layered structure, fabrication process thereof, electron device array and dispaly apparatus
US20050230678A1 (en) * 2004-04-14 2005-10-20 Yong Cao Organic electronic device comprising conductive members and processes for forming and using the organic electronic device
US20050236614A1 (en) * 2004-04-22 2005-10-27 Parker Ian D Processes for forming organic layers, organic electronic devices, and transistors

Also Published As

Publication number Publication date
WO2008048299A2 (en) 2008-04-24

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