WO2008051503A3 - Light-emitter-based devices with lattice-mismatched semiconductor structures - Google Patents

Light-emitter-based devices with lattice-mismatched semiconductor structures Download PDF

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Publication number
WO2008051503A3
WO2008051503A3 PCT/US2007/022392 US2007022392W WO2008051503A3 WO 2008051503 A3 WO2008051503 A3 WO 2008051503A3 US 2007022392 W US2007022392 W US 2007022392W WO 2008051503 A3 WO2008051503 A3 WO 2008051503A3
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WO
WIPO (PCT)
Prior art keywords
lattice
light
emitter
semiconductor structures
based devices
Prior art date
Application number
PCT/US2007/022392
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French (fr)
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WO2008051503A2 (en
Inventor
Jizhong Li
Anthony J Lochtefeld
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Amberwave Systems Corp
Jizhong Li
Anthony J Lochtefeld
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Publication date
Application filed by Amberwave Systems Corp, Jizhong Li, Anthony J Lochtefeld filed Critical Amberwave Systems Corp
Publication of WO2008051503A2 publication Critical patent/WO2008051503A2/en
Publication of WO2008051503A3 publication Critical patent/WO2008051503A3/en

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Abstract

Some aspects for the invention. include a method and a structure including a light -emitting device (300, 300') disposed over a second crystalline semiconductor material (140) formed over a semiconductor substrate (100) comprising a first crystalline material. In some embodiments, the second crystalline semiconductor material (140) is proved in a trench (120) defined in a dielectric layer (110) which is disposed over said substrate (100). In some embodiments, the second crystalline semiconductor material is a lattice-mismatched to the first crystalline semiconductor material.
PCT/US2007/022392 2006-10-19 2007-10-19 Light-emitter-based devices with lattice-mismatched semiconductor structures WO2008051503A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85278106P 2006-10-19 2006-10-19
US60/852,781 2006-10-19

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WO2008051503A2 WO2008051503A2 (en) 2008-05-02
WO2008051503A3 true WO2008051503A3 (en) 2008-07-31

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