WO2008057616A8 - Antimony and germanium complexes useful for cvd/ald of metal thin films - Google Patents

Antimony and germanium complexes useful for cvd/ald of metal thin films Download PDF

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Publication number
WO2008057616A8
WO2008057616A8 PCT/US2007/063830 US2007063830W WO2008057616A8 WO 2008057616 A8 WO2008057616 A8 WO 2008057616A8 US 2007063830 W US2007063830 W US 2007063830W WO 2008057616 A8 WO2008057616 A8 WO 2008057616A8
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WO
WIPO (PCT)
Prior art keywords
antimony
precursors
ald
cvd
thin films
Prior art date
Application number
PCT/US2007/063830
Other languages
French (fr)
Other versions
WO2008057616A2 (en
WO2008057616A3 (en
Inventor
William Hunks
Tianniu Chen
Chongying Xu
Jeffrey F. Roeder
Thomas H. Baum
Melissa A. Petruska
Matthias Stender
Philip S. H. Chen
Gregory T. Stauf
Bryan C. Hendrix
Original Assignee
Advanced Technology Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP07758383A priority Critical patent/EP2078102B1/en
Priority to CN2007800266643A priority patent/CN101495672B/en
Priority to JP2009535369A priority patent/JP5320295B2/en
Priority to KR1020117023047A priority patent/KR101279925B1/en
Application filed by Advanced Technology Materials, Inc. filed Critical Advanced Technology Materials, Inc.
Priority to US12/307,101 priority patent/US7838329B2/en
Publication of WO2008057616A2 publication Critical patent/WO2008057616A2/en
Publication of WO2008057616A3 publication Critical patent/WO2008057616A3/en
Publication of WO2008057616A8 publication Critical patent/WO2008057616A8/en
Priority to US12/860,906 priority patent/US8008117B2/en
Priority to US13/168,979 priority patent/US8268665B2/en
Priority to US13/622,233 priority patent/US8709863B2/en
Priority to US14/251,475 priority patent/US9219232B2/en

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/30—Germanium compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
    • C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic System without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/28—Titanium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
    • C07F9/90—Antimony compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
    • C07F9/90—Antimony compounds
    • C07F9/902—Compounds without antimony-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Abstract

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.
PCT/US2007/063830 2006-11-02 2007-03-12 Antimony and germanium complexes useful for cvd/ald of metal thin films WO2008057616A2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
EP07758383A EP2078102B1 (en) 2006-11-02 2007-03-12 Antimony and germanium complexes useful for cvd/ald of metal thin films
CN2007800266643A CN101495672B (en) 2006-11-02 2007-03-12 Antimony and germanium complexes useful for CVD/ALD of metal thin films
JP2009535369A JP5320295B2 (en) 2006-11-02 2007-03-12 Antimony and germanium complexes useful for CVD / ALD of metal thin films
KR1020117023047A KR101279925B1 (en) 2006-11-02 2007-03-12 Antimony and germanium complexes useful for cvd/ald of metal thin films
US12/307,101 US7838329B2 (en) 2006-11-02 2007-05-12 Antimony and germanium complexes useful for CVD/ALD of metal thin films
US12/860,906 US8008117B2 (en) 2006-11-02 2010-08-22 Antimony and germanium complexes useful for CVD/ALD of metal thin films
US13/168,979 US8268665B2 (en) 2006-11-02 2011-06-26 Antimony and germanium complexes useful for CVD/ALD of metal thin films
US13/622,233 US8709863B2 (en) 2006-11-02 2012-09-18 Antimony and germanium complexes useful for CVD/ALD of metal thin films
US14/251,475 US9219232B2 (en) 2006-11-02 2014-04-11 Antimony and germanium complexes useful for CVD/ALD of metal thin films

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86407306P 2006-11-02 2006-11-02
US60/864,073 2006-11-02
US88724907P 2007-01-30 2007-01-30
US60/887,249 2007-01-30

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/307,101 A-371-Of-International US7838329B2 (en) 2006-11-02 2007-05-12 Antimony and germanium complexes useful for CVD/ALD of metal thin films
US12/860,906 Continuation US8008117B2 (en) 2006-11-02 2010-08-22 Antimony and germanium complexes useful for CVD/ALD of metal thin films

Publications (3)

Publication Number Publication Date
WO2008057616A2 WO2008057616A2 (en) 2008-05-15
WO2008057616A3 WO2008057616A3 (en) 2009-04-09
WO2008057616A8 true WO2008057616A8 (en) 2010-03-18

Family

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PCT/US2007/063830 WO2008057616A2 (en) 2006-11-02 2007-03-12 Antimony and germanium complexes useful for cvd/ald of metal thin films

Country Status (8)

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US (5) US7838329B2 (en)
EP (2) EP2511280A1 (en)
JP (2) JP5320295B2 (en)
KR (3) KR101279925B1 (en)
CN (2) CN102352488B (en)
SG (1) SG176449A1 (en)
TW (1) TWI431145B (en)
WO (1) WO2008057616A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7267271B2 (en) 2017-11-03 2023-05-01 インターナショナル・ビジネス・マシーンズ・コーポレーション Selective phase change material growth in high aspect ratio dielectric holes for semiconductor device fabrication

Families Citing this family (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4714422B2 (en) * 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Method for depositing germanium-containing film and vapor delivery device
WO2007133837A2 (en) 2006-05-12 2007-11-22 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
KR100757415B1 (en) * 2006-07-13 2007-09-10 삼성전자주식회사 Germanium compound, method for fabricating thereof, phase-change memory device using the same and method for forming thereof
KR101279925B1 (en) 2006-11-02 2013-07-08 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Antimony and germanium complexes useful for cvd/ald of metal thin films
KR100871692B1 (en) * 2006-11-07 2008-12-08 삼성전자주식회사 Metal precursor for low temperature deposition, method of forming metal layer using the precursor and method of fabricating phase-change memory device using the precursor
KR101275799B1 (en) * 2006-11-21 2013-06-18 삼성전자주식회사 Method of forming phase change layer using Ge precursor for low temperature deposition and method of manufacturing phase change memory device using the same
TW200831694A (en) 2007-01-17 2008-08-01 Advanced Tech Materials Precursor compositions for ALD/CVD of group II ruthenate thin films
US8377341B2 (en) * 2007-04-24 2013-02-19 Air Products And Chemicals, Inc. Tellurium (Te) precursors for making phase change memory materials
KR100888617B1 (en) * 2007-06-15 2009-03-17 삼성전자주식회사 Phase Change Memory Device and Method of Forming the Same
JP2011511881A (en) * 2007-06-28 2011-04-14 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Precursor for silicon dioxide gap filler
US8142847B2 (en) * 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
JP4621897B2 (en) 2007-08-31 2011-01-26 独立行政法人産業技術総合研究所 Solid memory
JP4595125B2 (en) 2007-08-31 2010-12-08 独立行政法人産業技術総合研究所 Solid memory
US8454928B2 (en) 2007-09-17 2013-06-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tellurium precursors for GST deposition
US20090087561A1 (en) * 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
KR101458953B1 (en) 2007-10-11 2014-11-07 삼성전자주식회사 Method of forming phase change material layer using Ge(Ⅱ) source, and method of fabricating phase change memory device
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
WO2009059237A2 (en) * 2007-10-31 2009-05-07 Advanced Technology Materials, Inc. Novel bismuth precursors for cvd/ald of thin films
SG178736A1 (en) * 2007-10-31 2012-03-29 Advanced Tech Materials Amorphous ge/te deposition process
US7960205B2 (en) * 2007-11-27 2011-06-14 Air Products And Chemicals, Inc. Tellurium precursors for GST films in an ALD or CVD process
US20090162973A1 (en) * 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US20130210217A1 (en) * 2008-01-28 2013-08-15 Air Products And Chemicals, Inc. Precursors for GST Films in ALD/CVD Processes
US8318252B2 (en) 2008-01-28 2012-11-27 Air Products And Chemicals, Inc. Antimony precursors for GST films in ALD/CVD processes
US20090215225A1 (en) * 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US20100078601A1 (en) * 2008-03-31 2010-04-01 American Air Liquide, Inc. Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films
US8193388B2 (en) 2008-04-15 2012-06-05 American Air Liquide, Inc. Compounds for depositing tellurium-containing films
US20090263934A1 (en) * 2008-04-22 2009-10-22 Samsung Electronics Co., Ltd. Methods of forming chalcogenide films and methods of manufacturing memory devices using the same
EP2860279A1 (en) * 2008-04-25 2015-04-15 ASM International N.V. Synthesis of precursors for ALD of tellurium and selenium thin films
WO2009134989A2 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8507040B2 (en) * 2008-05-08 2013-08-13 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8101237B2 (en) 2008-05-29 2012-01-24 L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
WO2009152108A2 (en) * 2008-06-10 2009-12-17 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8168811B2 (en) 2008-07-22 2012-05-01 Advanced Technology Materials, Inc. Precursors for CVD/ALD of metal-containing films
US8236381B2 (en) * 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
KR101445333B1 (en) * 2008-08-29 2014-10-01 삼성전자주식회사 Methods for forming resistance changeable memory devices
US7834342B2 (en) 2008-09-04 2010-11-16 Micron Technology, Inc. Phase change material and methods of forming the phase change material
US8163341B2 (en) 2008-11-19 2012-04-24 Micron Technology, Inc. Methods of forming metal-containing structures, and methods of forming germanium-containing structures
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
KR101002282B1 (en) * 2008-12-15 2010-12-20 엘지전자 주식회사 Solar cell and manufacturing method thereof
KR101120065B1 (en) * 2009-01-08 2012-03-23 솔브레인 주식회사 Novel germanium complexes with amidine derivative ligand and process for preparing the same
JP2010171196A (en) * 2009-01-22 2010-08-05 Elpida Memory Inc Solid-state memory and semiconductor device
US8663735B2 (en) 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
US8003521B2 (en) * 2009-04-07 2011-08-23 Micron Technology, Inc. Semiconductor processing
US8148580B2 (en) 2009-04-15 2012-04-03 Micron Technology, Inc. Methods of forming a tellurium alkoxide and methods of forming a mixed halide-alkoxide of tellurium
US8697486B2 (en) 2009-04-15 2014-04-15 Micro Technology, Inc. Methods of forming phase change materials and methods of forming phase change memory circuitry
US8617972B2 (en) 2009-05-22 2013-12-31 Advanced Technology Materials, Inc. Low temperature GST process
WO2011002705A2 (en) * 2009-07-02 2011-01-06 Advanced Technology Materials, Inc. Hollow gst structure with dielectric fill
JP2013503849A (en) * 2009-09-02 2013-02-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Germanium (II) dihalide precursor for deposition of germanium-containing films
US9315896B2 (en) 2009-10-26 2016-04-19 Asm Ip Holding B.V. Synthesis and use of precursors for ALD of group VA element containing thin films
US20110108792A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Single Crystal Phase Change Material
US20110124182A1 (en) * 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
US8017432B2 (en) * 2010-01-08 2011-09-13 International Business Machines Corporation Deposition of amorphous phase change material
KR20120123126A (en) 2010-02-03 2012-11-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition
KR101706809B1 (en) 2010-03-26 2017-02-15 엔테그리스, 아이엔씨. Germanium antimony telluride materials and devices incorporating same
US8796483B2 (en) 2010-04-01 2014-08-05 President And Fellows Of Harvard College Cyclic metal amides and vapor deposition using them
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US8124445B2 (en) 2010-07-26 2012-02-28 Micron Technology, Inc. Confined resistance variable memory cell structures and methods
US8148197B2 (en) 2010-07-27 2012-04-03 Micron Technology, Inc. Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same
EP2444404A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
EP2444405A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
EP2444406A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
EP2444407A1 (en) 2010-10-07 2012-04-25 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal compounds for deposition of chalcogenide films at low temperature
KR101284664B1 (en) * 2010-12-31 2013-07-11 삼성전자주식회사 Organometallic compounds with silylamine ligand, and method for deposition of a thin-film of metal oxide or silicon-containing metal oxide therefrom
JP5624083B2 (en) * 2011-06-09 2014-11-12 エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓａｎｄ Ｃｈｅｍｉｃａｌｓｉｎｃｏｒｐｏｒａｔｅｄ Binary and ternary metal chalcogenide materials and methods for making and using the same
KR20140063684A (en) * 2011-08-19 2014-05-27 도쿄엘렉트론가부시키가이샤 Method for forming ge-sb-te film, method for forming ge-te film, method for forming sb-te film, and program
US8932900B2 (en) 2011-08-24 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory and method of fabricating same
KR20140085461A (en) 2011-09-27 2014-07-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing film depositions
JP6202798B2 (en) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． Atomic layer deposition of antimony oxide films.
KR101907972B1 (en) 2011-10-31 2018-10-17 주식회사 원익아이피에스 Apparatus and Method for treating substrate
CN102583502A (en) * 2012-02-25 2012-07-18 复旦大学 Method for preparing nanometer copper-sulfur compounds with controllable morphologies based on chemical vapor deposition method
KR102117124B1 (en) 2012-04-30 2020-05-29 엔테그리스, 아이엔씨. Phase change memory structure comprising phase change alloy center-filled with dielectric material
KR20150034123A (en) 2012-07-20 2015-04-02 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 Organosilane precursors for ald/cvd silicon-containing film applications
US8859045B2 (en) * 2012-07-23 2014-10-14 Applied Materials, Inc. Method for producing nickel-containing films
US8741688B2 (en) 2012-07-24 2014-06-03 Micron Technology, Inc. Methods of forming a metal chalcogenide material
US9194040B2 (en) 2012-07-25 2015-11-24 Applied Materials, Inc. Methods for producing nickel-containing films
KR20140021979A (en) * 2012-08-13 2014-02-21 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Precursors for gst films in ald/cvd processes
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
KR101472472B1 (en) * 2012-11-28 2014-12-12 한국화학연구원 Germanium precursors, preparation method thereof and process for the formation of thin films using the same
JP5957375B2 (en) * 2012-11-30 2016-07-27 株式会社日立製作所 Phase change memory
KR102022409B1 (en) 2013-03-13 2019-09-18 삼성전자주식회사 Method of forming a thin layer and method of manufacturing a phase-change memory device using the same
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
CN103172653A (en) * 2013-04-16 2013-06-26 上海宏锐新材料科技有限公司 Preparation method of tri(dimethylamino) silicane
TW201509799A (en) 2013-07-19 2015-03-16 Air Liquide Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications
JP2016525550A (en) * 2013-07-26 2016-08-25 プレジデント アンド フェローズ オブ ハーバード カレッジ Cyclic amine metal amide
KR102077641B1 (en) * 2013-08-06 2020-02-14 삼성전자주식회사 Phase-change material layer and method of manufacturing the same
WO2015047914A1 (en) 2013-09-27 2015-04-02 Antonio Sanchez Amine substituted trisilylamine and tridisilylamine compounds
CN103474572A (en) * 2013-09-28 2013-12-25 复旦大学 Flexible-substrate-based resistive random access memory with CRS action and preparation method thereof
US9218963B2 (en) 2013-12-19 2015-12-22 Asm Ip Holding B.V. Cyclical deposition of germanium
KR101659610B1 (en) * 2014-03-18 2016-09-23 주식회사 유진테크 머티리얼즈 Organo germanium compounds and method of depositing thin film using them as precursors
CN104086589B (en) * 2014-07-17 2017-02-01 江南大学 Easily prepared pyrazolyl Ge (II) compound used as microelectronic material
WO2016012495A1 (en) * 2014-07-24 2016-01-28 Basf Se Process for the generation of thin inorganic films
DE102014014036A1 (en) * 2014-09-26 2016-03-31 Philipps-Universität Marburg Use of at least one binary group 15 element compound, a 13/15 semiconductor layer and binary group 15 element compounds
FR3029918B1 (en) * 2014-12-12 2018-01-26 Universite Claude Bernard Lyon 1 TRANSFER AGENT FOR THE PREPARATION OF A FUNCTIONAL OR TELECHELIC POLYOLEFIN
US10570513B2 (en) 2014-12-13 2020-02-25 American Air Liquide, Inc. Organosilane precursors for ALD/CVD silicon-containing film applications and methods of using the same
US9543144B2 (en) 2014-12-31 2017-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Vapor deposition of chalcogenide-containing films
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
WO2017030346A1 (en) * 2015-08-17 2017-02-23 주식회사 유피케미칼 Ge(ii)-containing precursor composition and method for forming germanium-containing film using precursor composition
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
WO2017111870A1 (en) * 2015-12-24 2017-06-29 Intel Corporation Selective hard mask processing based on low-valency group iv heterocyclic precursors
KR101952729B1 (en) * 2016-04-29 2019-02-27 세종대학교산학협력단 Preparing method of chalcogen-containing film using atomic layer deposition
US9929006B2 (en) * 2016-07-20 2018-03-27 Micron Technology, Inc. Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures
CN106854224B (en) * 2016-11-11 2019-03-12 苏州大学 A kind of the mercury tellurium compound and its hydrazine assistant preparation method of the complex ion containing transition metal
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
JP6321252B1 (en) * 2017-03-24 2018-05-09 田中貴金属工業株式会社 Chemical vapor deposition material comprising iridium complex and chemical vapor deposition method using the chemical vapor deposition material
US10263640B2 (en) 2017-04-04 2019-04-16 Seagate Technology Llc Low density parity check (LDPC) decoder with pre-saturation compensation
US10174423B2 (en) * 2017-06-28 2019-01-08 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium-containing film forming compositions and vapor deposition of Niobium-containing films
US10171110B1 (en) 2017-07-03 2019-01-01 Seagate Technology Llc Sequential power transitioning of multiple data decoders
US11253846B2 (en) 2017-07-14 2022-02-22 The Board Of Trustees Of The University Of Illinois Metal complexes for depositing films and method of making and using the same
US11008353B2 (en) 2017-07-14 2021-05-18 The Board Of Trustees Of The University Of Illinois Metal complexes for depositing films and method of making and using the same
JP6616365B2 (en) * 2017-09-11 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium
US10283704B2 (en) 2017-09-26 2019-05-07 International Business Machines Corporation Resistive memory device
KR102103346B1 (en) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 Precursor Solution for Vapor Deposition and Fabrication Method of Thin Film Using the Same
KR102451404B1 (en) 2017-12-08 2022-10-05 엘지디스플레이 주식회사 Phase-transition optical isomer compound, Transparent electroluminescent display device and Method of fabricating the same
TW202325889A (en) * 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
KR20210031492A (en) 2018-07-12 2021-03-19 바스프 에스이 Method for producing a metal or semimetal-containing film
US10892777B2 (en) 2019-02-06 2021-01-12 Seagate Technology Llc Fast error recovery with error correction code (ECC) syndrome weight assist
CN111785792B (en) * 2019-04-04 2022-07-01 上海新微技术研发中心有限公司 Preparation method of germanium-lead alloy material
CN110148668B (en) * 2019-05-31 2022-05-17 中国科学院上海微系统与信息技术研究所 Al-Sc-Sb-Te phase-change material, phase-change memory unit and preparation method thereof
JP7194645B2 (en) * 2019-05-31 2022-12-22 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
WO2020255913A1 (en) * 2019-06-17 2020-12-24 田中貴金属工業株式会社 Starting material for chemical vapor deposition composed of organic manganese compound, and chemical vapor deposition method using said starting material for chemical vapor deposition
GB2587401A (en) * 2019-09-27 2021-03-31 Univ Bath Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
TW202136561A (en) * 2020-02-20 2021-10-01 美商應用材料股份有限公司 Deposition of tellurium-containing thin films
KR102444272B1 (en) * 2020-05-18 2022-09-16 서울대학교산학협력단 Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming switching device using the same and method of manufacturing memory device
KR102444266B1 (en) * 2020-05-18 2022-09-16 서울대학교산학협력단 Method of forming chalcogenide-based thin film using atomic layer deposition process, method of forming phase change material layer using the same and method of fabricating phase change memory device
US20220106333A1 (en) * 2020-10-06 2022-04-07 American Air Liquide, Inc. Indium precursors for vapor depositions
US20220259734A1 (en) * 2021-02-16 2022-08-18 Applied Materials, Inc. Reducing Agents for Atomic Layer Deposition
KR20230100613A (en) 2021-12-28 2023-07-05 (주)디엔에프 Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same

Family Cites Families (149)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU768457A1 (en) 1976-01-04 1980-10-07 Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом Catalyst for removing nitrogen oxides from exhaust gases
JPS5838296A (en) 1981-08-31 1983-03-05 Ichiro Kijima Novel antimony compound
US4948623A (en) 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
US4962214A (en) * 1988-05-11 1990-10-09 Massachusettes Institute Of Technology Catalytic enantioselective addition of hydrocarbon equivalents to alpha, beta-unsaturated carbonyl compounds
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US4960916A (en) * 1989-09-29 1990-10-02 United States Of America As Represented By The Secretary Of The Navy Organometallic antimony compounds useful in chemical vapor deposition processes
US5453494A (en) * 1990-07-06 1995-09-26 Advanced Technology Materials, Inc. Metal complex source reagents for MOCVD
US5296716A (en) 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5596522A (en) 1991-01-18 1997-01-21 Energy Conversion Devices, Inc. Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
US5312983A (en) 1991-02-15 1994-05-17 Advanced Technology Materials, Inc. Organometallic tellurium compounds useful in chemical vapor deposition processes
JP3336034B2 (en) 1992-05-12 2002-10-21 同和鉱業株式会社 Manufacturing method of sputtering target
US5997642A (en) 1996-05-21 1999-12-07 Symetrix Corporation Method and apparatus for misted deposition of integrated circuit quality thin films
US5972743A (en) 1996-12-03 1999-10-26 Advanced Technology Materials, Inc. Precursor compositions for ion implantation of antimony and ion implantation process utilizing same
AU724629B2 (en) 1997-04-16 2000-09-28 Asahi Kasei Kabushiki Kaisha Process for producing optical information recording medium and optical information recording medium produced by the process
US6005127A (en) * 1997-11-24 1999-12-21 Advanced Technology Materials, Inc. Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films
US6146608A (en) * 1997-11-24 2000-11-14 Advanced Technology Materials, Inc. Stable hydride source compositions for manufacture of semiconductor devices and structures
US6787186B1 (en) * 1997-12-18 2004-09-07 Advanced Technology Materials, Inc. Method of controlled chemical vapor deposition of a metal oxide ceramic layer
US7098163B2 (en) * 1998-08-27 2006-08-29 Cabot Corporation Method of producing membrane electrode assemblies for use in proton exchange membrane and direct methanol fuel cells
US6123993A (en) 1998-09-21 2000-09-26 Advanced Technology Materials, Inc. Method and apparatus for forming low dielectric constant polymeric films
US6086779A (en) 1999-03-01 2000-07-11 Mcgean-Rohco, Inc. Copper etching compositions and method for etching copper
US6750079B2 (en) 1999-03-25 2004-06-15 Ovonyx, Inc. Method for making programmable resistance memory element
US6281022B1 (en) * 1999-04-28 2001-08-28 Sharp Laboratories Of America, Inc. Multi-phase lead germanate film deposition method
JP2001067720A (en) 1999-08-31 2001-03-16 Toray Ind Inc Optical recording medium
US6269979B1 (en) 1999-10-05 2001-08-07 Charles Dumont Multi-compartmented mixing dispenser
GB0004852D0 (en) * 2000-02-29 2000-04-19 Unilever Plc Ligand and complex for catalytically bleaching a substrate
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
JP4621333B2 (en) * 2000-06-01 2011-01-26 ホーチキ株式会社 Thin film formation method
US20020090815A1 (en) * 2000-10-31 2002-07-11 Atsushi Koike Method for forming a deposited film by plasma chemical vapor deposition
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
JP2002220658A (en) 2001-01-26 2002-08-09 Ricoh Co Ltd Sputtering target for optical disk and manufacturing method therefor
KR101050377B1 (en) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 Improved process for deposition of semiconductor films
US7005392B2 (en) 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US8618595B2 (en) 2001-07-02 2013-12-31 Merck Patent Gmbh Applications of light-emitting nanoparticles
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
ATE340800T1 (en) 2001-10-26 2006-10-15 Epichem Ltd PRECURSOR COMPOUNDS FOR CHEMICAL VAPOR DEPOSITION
US6972430B2 (en) 2002-02-20 2005-12-06 Stmicroelectronics S.R.L. Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
US6872963B2 (en) * 2002-08-08 2005-03-29 Ovonyx, Inc. Programmable resistance memory element with layered memory material
EP1535321A4 (en) 2002-08-18 2009-05-27 Asml Us Inc Low termperature deposition of silicon oxides and oxynitrides
EP2182088B1 (en) 2002-11-15 2013-07-17 President and Fellows of Harvard College Atomic layer deposition using metal amidinates
US6861559B2 (en) 2002-12-10 2005-03-01 Board Of Trustees Of Michigan State University Iminoamines and preparation thereof
US7115927B2 (en) 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7402851B2 (en) 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US7425735B2 (en) 2003-02-24 2008-09-16 Samsung Electronics Co., Ltd. Multi-layer phase-changeable memory devices
JP4714422B2 (en) 2003-04-05 2011-06-29 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Method for depositing germanium-containing film and vapor delivery device
US20040215030A1 (en) * 2003-04-22 2004-10-28 Norman John Anthony Thomas Precursors for metal containing films
US7893419B2 (en) 2003-08-04 2011-02-22 Intel Corporation Processing phase change material to improve programming speed
US7029978B2 (en) * 2003-08-04 2006-04-18 Intel Corporation Controlling the location of conduction breakdown in phase change memories
US20050082624A1 (en) 2003-10-20 2005-04-21 Evgeni Gousev Germanate gate dielectrics for semiconductor devices
KR100577909B1 (en) 2003-11-20 2006-05-10 주식회사 에버테크 Universal thin film deposit device
US7329593B2 (en) * 2004-02-27 2008-02-12 Asm America, Inc. Germanium deposition
US7005665B2 (en) * 2004-03-18 2006-02-28 International Business Machines Corporation Phase change memory cell on silicon-on insulator substrate
US7312165B2 (en) * 2004-05-05 2007-12-25 Jursich Gregory M Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices
KR100581993B1 (en) * 2004-06-09 2006-05-22 삼성전자주식회사 Method of forming material using atomic layer deposition
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
WO2006012052A2 (en) * 2004-06-25 2006-02-02 Arkema, Inc. Amidinate ligand containing chemical vapor deposition precursors
US20050287747A1 (en) 2004-06-29 2005-12-29 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
KR100639206B1 (en) 2004-06-30 2006-10-30 주식회사 하이닉스반도체 Phase-change memory device and method for manufacturing the same
KR100642635B1 (en) * 2004-07-06 2006-11-10 삼성전자주식회사 Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same
KR100632948B1 (en) * 2004-08-06 2006-10-11 삼성전자주식회사 Sputtering method for forming a chalcogen compound and method for fabricating phase-changeable memory device using the same
US7300873B2 (en) 2004-08-13 2007-11-27 Micron Technology, Inc. Systems and methods for forming metal-containing layers using vapor deposition processes
US7250367B2 (en) 2004-09-01 2007-07-31 Micron Technology, Inc. Deposition methods using heteroleptic precursors
KR100652378B1 (en) * 2004-09-08 2006-12-01 삼성전자주식회사 Sb Precursor and Manufacturing Method of Phase-Change Memory Device using the Same
US7390360B2 (en) * 2004-10-05 2008-06-24 Rohm And Haas Electronic Materials Llc Organometallic compounds
JP2006124262A (en) * 2004-11-01 2006-05-18 Dainippon Printing Co Ltd InSb NANOPARTICLE
JP2006156886A (en) 2004-12-01 2006-06-15 Renesas Technology Corp Semiconductor integrated circuit device and manufacturing method therefor
KR100640620B1 (en) * 2004-12-27 2006-11-02 삼성전자주식회사 NOR type flash memory device having twin bit cell scheme
KR100618879B1 (en) * 2004-12-27 2006-09-01 삼성전자주식회사 A Ge precursor, a thin layer prepared by using the Ge precursor, a method for preparing the thin layer and a phase-change memory device
US20060172067A1 (en) * 2005-01-28 2006-08-03 Energy Conversion Devices, Inc Chemical vapor deposition of chalcogenide materials
US20080286446A1 (en) 2005-01-28 2008-11-20 Smuruthi Kamepalli Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials
KR100585175B1 (en) * 2005-01-31 2006-05-30 삼성전자주식회사 Fabrication method of gesbte thin film by chemical vapor deposition process
KR100688532B1 (en) 2005-02-14 2007-03-02 삼성전자주식회사 A Te precursor, a Te-including chalcogenide thin layer prepared by using the Te precursor, a method for preparing the thin layer and a phase-change memory device
US7399666B2 (en) 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US7488967B2 (en) 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
EP1710324B1 (en) 2005-04-08 2008-12-03 STMicroelectronics S.r.l. PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device
JP2007019305A (en) 2005-07-08 2007-01-25 Elpida Memory Inc Semiconductor storage device
KR100681266B1 (en) 2005-07-25 2007-02-09 삼성전자주식회사 Method of manufacturing a variable resistance and method of manufacturing a phase changeable memory device using the same
US7525117B2 (en) 2005-08-09 2009-04-28 Ovonyx, Inc. Chalcogenide devices and materials having reduced germanium or telluruim content
KR100962623B1 (en) 2005-09-03 2010-06-11 삼성전자주식회사 Method of forming a phase changeable material layer, and methods of manufacturing a phase changeable memory unit and a phase changeable memory device using the same
US7397060B2 (en) 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
KR100675289B1 (en) 2005-11-14 2007-01-29 삼성전자주식회사 Phase changeable memory cell array region and methods of forming the same
US7459717B2 (en) 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
WO2007067604A2 (en) 2005-12-06 2007-06-14 Structured Materials Inc. Method of making undoped, alloyed and doped chalcogenide films by mocvd processes
KR101330769B1 (en) 2005-12-12 2013-11-18 오보닉스, 아이엔씨. Chalcogenide devices and materials having reduced germanium or telluruim content
US20070154637A1 (en) * 2005-12-19 2007-07-05 Rohm And Haas Electronic Materials Llc Organometallic composition
KR100695168B1 (en) 2006-01-10 2007-03-14 삼성전자주식회사 Method of forming phase change material thin film, and method of manufacturing phase change memory device using the same
US7812334B2 (en) 2006-04-04 2010-10-12 Micron Technology, Inc. Phase change memory elements using self-aligned phase change material layers and methods of making and using same
US7514705B2 (en) 2006-04-25 2009-04-07 International Business Machines Corporation Phase change memory cell with limited switchable volume
WO2007133837A2 (en) 2006-05-12 2007-11-22 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
KR101095741B1 (en) 2006-05-31 2011-12-21 르네사스 일렉트로닉스 가부시키가이샤 Semiconductor device
US8399056B2 (en) 2006-06-02 2013-03-19 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US7638645B2 (en) 2006-06-28 2009-12-29 President And Fellows Of Harvard University Metal (IV) tetra-amidinate compounds and their use in vapor deposition
CN102993050A (en) 2006-06-28 2013-03-27 哈佛学院院长等 Metal(IV) tetra-amidinate compounds and their use in vapor deposition
KR100757415B1 (en) 2006-07-13 2007-09-10 삼성전자주식회사 Germanium compound, method for fabricating thereof, phase-change memory device using the same and method for forming thereof
KR100780865B1 (en) 2006-07-19 2007-11-30 삼성전자주식회사 Methods of forming a semiconductor device including a phase-change layer
KR100791477B1 (en) 2006-08-08 2008-01-03 삼성전자주식회사 A phase-change memory unit, method of manufacturing the phase-change memory unit, a phase-change memory device having the phase-change memory unit and method of manufacturing the phase-change memory device
TWI305678B (en) 2006-08-14 2009-01-21 Ind Tech Res Inst Phase-change memory and fabricating method thereof
KR100766504B1 (en) 2006-09-29 2007-10-15 삼성전자주식회사 Semiconductor device and method of fabricating the same
US20080090400A1 (en) 2006-10-17 2008-04-17 Cheek Roger W Self-aligned in-contact phase change memory device
KR101263822B1 (en) 2006-10-20 2013-05-13 삼성전자주식회사 Method of manufacturing phase change memory device and method of forming phase change layer applied in the same
US8106376B2 (en) 2006-10-24 2012-01-31 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with a self-aligned air gap insulator
KR101279925B1 (en) 2006-11-02 2013-07-08 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Antimony and germanium complexes useful for cvd/ald of metal thin films
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
KR101275799B1 (en) 2006-11-21 2013-06-18 삼성전자주식회사 Method of forming phase change layer using Ge precursor for low temperature deposition and method of manufacturing phase change memory device using the same
KR100932904B1 (en) 2006-12-05 2009-12-21 한국전자통신연구원 Modem performance analysis device and method, and function test method of modem performance analysis device
WO2008069821A1 (en) 2006-12-05 2008-06-12 Advanced Technology Materials, Inc. Metal aminotroponiminates, bis-oxazolinates and guanidinates
KR20080055508A (en) 2006-12-15 2008-06-19 삼성전자주식회사 Phase change layer having different crystal lattice in single layer and method of forming the same and phase change memory device comprising means for preventing ti diffusion and method of manufacturing the same
US7750173B2 (en) 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
KR100896180B1 (en) 2007-01-23 2009-05-12 삼성전자주식회사 Phase change Random Access Memory comprising phase change material layer formed by selective growth method and method of manufacturing the same
FR2913523B1 (en) 2007-03-09 2009-06-05 Commissariat Energie Atomique MULTI-LEVEL DATA STORAGE DEVICE WITH PHASE CHANGE MATERIAL
CN103151335B (en) * 2007-04-09 2016-09-28 哈佛学院院长等 Cobalt nitride layers and their forming method for copper-connection
US20080254218A1 (en) 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition
US8377341B2 (en) 2007-04-24 2013-02-19 Air Products And Chemicals, Inc. Tellurium (Te) precursors for making phase change memory materials
US20080272355A1 (en) 2007-05-04 2008-11-06 Samsung Electronics Co., Ltd. Phase change memory device and method for forming the same
TW200847399A (en) 2007-05-21 2008-12-01 Ind Tech Res Inst Phase change memory device and method of fabricating the same
KR100888617B1 (en) 2007-06-15 2009-03-17 삼성전자주식회사 Phase Change Memory Device and Method of Forming the Same
KR100905278B1 (en) 2007-07-19 2009-06-29 주식회사 아이피에스 Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same
US7863593B2 (en) 2007-07-20 2011-01-04 Qimonda Ag Integrated circuit including force-filled resistivity changing material
KR20090013419A (en) 2007-08-01 2009-02-05 삼성전자주식회사 Phase change memory devices and methods of forming the same
KR101370275B1 (en) 2007-08-21 2014-03-05 삼성전자주식회사 Phase Change Random Access Memory and Manufacturing Method for the Same
WO2009034775A1 (en) 2007-09-13 2009-03-19 Nippon Mining & Metals Co., Ltd. Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly
US8454928B2 (en) 2007-09-17 2013-06-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tellurium precursors for GST deposition
KR20090029488A (en) 2007-09-18 2009-03-23 삼성전자주식회사 Method of forming chalcogenide layer including te, and method of fabricating phase-change memory device
US20090087561A1 (en) 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
KR20090036771A (en) 2007-10-10 2009-04-15 삼성전자주식회사 Method of fabricating phase change memory device having a doped phase change material layer
KR101458953B1 (en) 2007-10-11 2014-11-07 삼성전자주식회사 Method of forming phase change material layer using Ge(Ⅱ) source, and method of fabricating phase change memory device
SG178736A1 (en) 2007-10-31 2012-03-29 Advanced Tech Materials Amorphous ge/te deposition process
US7960205B2 (en) 2007-11-27 2011-06-14 Air Products And Chemicals, Inc. Tellurium precursors for GST films in an ALD or CVD process
US20090162973A1 (en) 2007-12-21 2009-06-25 Julien Gatineau Germanium precursors for gst film deposition
US8318252B2 (en) 2008-01-28 2012-11-27 Air Products And Chemicals, Inc. Antimony precursors for GST films in ALD/CVD processes
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US7935564B2 (en) 2008-02-25 2011-05-03 International Business Machines Corporation Self-converging bottom electrode ring
US7709325B2 (en) 2008-03-06 2010-05-04 International Business Machines Corporation Method of forming ring electrode
WO2009134989A2 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Antimony compounds useful for deposition of antimony-containing materials
US20090275164A1 (en) 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US8765223B2 (en) 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8101237B2 (en) 2008-05-29 2012-01-24 L'Air Liquide SociétéAnonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
WO2009152108A2 (en) 2008-06-10 2009-12-17 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8168811B2 (en) 2008-07-22 2012-05-01 Advanced Technology Materials, Inc. Precursors for CVD/ALD of metal-containing films
US8124950B2 (en) 2008-08-26 2012-02-28 International Business Machines Corporation Concentric phase change memory element
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
JP2010258249A (en) 2009-04-27 2010-11-11 Toshiba Corp Phase-change memory device
US8617972B2 (en) 2009-05-22 2013-12-31 Advanced Technology Materials, Inc. Low temperature GST process
WO2011002705A2 (en) 2009-07-02 2011-01-06 Advanced Technology Materials, Inc. Hollow gst structure with dielectric fill
JP2011066135A (en) 2009-09-16 2011-03-31 Elpida Memory Inc Method for fabricating phase-change memory device
US20110124182A1 (en) 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
US8017433B2 (en) 2010-02-09 2011-09-13 International Business Machines Corporation Post deposition method for regrowth of crystalline phase change material
KR101706809B1 (en) 2010-03-26 2017-02-15 엔테그리스, 아이엔씨. Germanium antimony telluride materials and devices incorporating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7267271B2 (en) 2017-11-03 2023-05-01 インターナショナル・ビジネス・マシーンズ・コーポレーション Selective phase change material growth in high aspect ratio dielectric holes for semiconductor device fabrication

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