WO2008063985A3 - A POINT DEFECT ENGINEERED SI LIGHT-EMITTING DIODE AT 1.218 μM - Google Patents

A POINT DEFECT ENGINEERED SI LIGHT-EMITTING DIODE AT 1.218 μM Download PDF

Info

Publication number
WO2008063985A3
WO2008063985A3 PCT/US2007/084494 US2007084494W WO2008063985A3 WO 2008063985 A3 WO2008063985 A3 WO 2008063985A3 US 2007084494 W US2007084494 W US 2007084494W WO 2008063985 A3 WO2008063985 A3 WO 2008063985A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting diode
point defect
defect engineered
engineered
Prior art date
Application number
PCT/US2007/084494
Other languages
French (fr)
Other versions
WO2008063985A2 (en
Inventor
Jiming Bao
Malek Tabbal
Michael J Aziz
Taegon Kim
Supakit Charnvanichborikarn
James S Williams
Federico Capasso
Original Assignee
Harvard College
Jiming Bao
Malek Tabbal
Michael J Aziz
Taegon Kim
Supakit Charnvanichborikarn
James S Williams
Federico Capasso
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harvard College, Jiming Bao, Malek Tabbal, Michael J Aziz, Taegon Kim, Supakit Charnvanichborikarn, James S Williams, Federico Capasso filed Critical Harvard College
Publication of WO2008063985A2 publication Critical patent/WO2008063985A2/en
Publication of WO2008063985A3 publication Critical patent/WO2008063985A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system

Abstract

A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used in producing electroluminescence having emissions at wavelengths approximately 1.218 μm.
PCT/US2007/084494 2006-11-13 2007-11-13 A POINT DEFECT ENGINEERED SI LIGHT-EMITTING DIODE AT 1.218 μM WO2008063985A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86548806P 2006-11-13 2006-11-13
US60/865,488 2006-11-13

Publications (2)

Publication Number Publication Date
WO2008063985A2 WO2008063985A2 (en) 2008-05-29
WO2008063985A3 true WO2008063985A3 (en) 2008-08-21

Family

ID=39430474

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/084494 WO2008063985A2 (en) 2006-11-13 2007-11-13 A POINT DEFECT ENGINEERED SI LIGHT-EMITTING DIODE AT 1.218 μM

Country Status (1)

Country Link
WO (1) WO2008063985A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030168665A1 (en) * 2002-03-07 2003-09-11 Samsung Electronics Co., Ltd. Silicon light-emitting device and display apparatus employing the same
US20040062284A1 (en) * 1995-12-18 2004-04-01 Jewell Jack L. Light emitting device
US20050082543A1 (en) * 2003-10-15 2005-04-21 Azar Alizadeh Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
US20050111779A1 (en) * 2002-03-08 2005-05-26 Infinera Corporation In-wafer testing of integrated optical components in photonic integrated circuits (PICs)

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040062284A1 (en) * 1995-12-18 2004-04-01 Jewell Jack L. Light emitting device
US20030168665A1 (en) * 2002-03-07 2003-09-11 Samsung Electronics Co., Ltd. Silicon light-emitting device and display apparatus employing the same
US20050111779A1 (en) * 2002-03-08 2005-05-26 Infinera Corporation In-wafer testing of integrated optical components in photonic integrated circuits (PICs)
US20050082543A1 (en) * 2003-10-15 2005-04-21 Azar Alizadeh Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BEUNEU F.: "Nucleation and growth of single wall carbon nanotubes", SOLID STATE COMMUNICATIONS, vol. 136, no. 8, November 2005 (2005-11-01), pages 462 - 465, XP005136814, Retrieved from the Internet <URL:http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TVW-hH5N32D-2&_user=10&_coverDate=11%2F30%2F2005&_alid=715346351&_rdoc=1&_fmt=summary&_orig=browse&_sort=d&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=bed5f9e237b0e95614fd0.....> *

Also Published As

Publication number Publication date
WO2008063985A2 (en) 2008-05-29

Similar Documents

Publication Publication Date Title
TW200742126A (en) Semiconductor light emitting device and its manufacturing method
WO2006086387A3 (en) Semiconductor light-emitting device
EP1976031A3 (en) Light emitting diode having well and/or barrier layers with superlattice structure
WO2008112064A3 (en) Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
WO2008021988A3 (en) Gan based led with improved light extraction efficiency and method for making the same
TWI266438B (en) Semiconductor light emitting device with protective element, and its manufacturing method
EP2045889A3 (en) Nitride semiconductor light-emitting device
ATE459106T1 (en) LIGHT-EMITTING COMPONENTS WITH CURRENT BLOCKING STRUCTURES AND METHOD FOR PRODUCING LIGHT-EMITTING COMPONENTS WITH CURRENT BLOCKING STRUCTURES
EP2093814A3 (en) Light-emitting diode, electronic apparatus, and light-emitting diode manufacturing method
EP1670076A3 (en) Semiconductor light emitting device having textured structure and method of manufacturing the same
WO2008153130A1 (en) Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
JP2010541295A5 (en)
EP1858090A3 (en) Light emitting diode having multi-pattern structure
TW200717884A (en) Method for manufacturing vertically structured light emitting diode
EP2360749A3 (en) Light emitting diode, LED package and lighting system incorporating the same
TW200616299A (en) Resonant cavity Ⅲ-nitride light emitting devices fabricated by growth substrate removal
TW200739949A (en) Gallium nitride type compound semiconductor light-emitting device and process for producing the same
WO2006104935A3 (en) Light emitting diodes and methods of fabrication
EP1677365A3 (en) Semiconductor light emitting diode having textured structure and method of manufacturing the same
SG127832A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
TW200601592A (en) High reflectivity p-contact for InGaN LEDs
WO2010146390A3 (en) Light emitting diodes
HK1110147A1 (en) Semiconductor heterostructure and light emitting diode comprising the semiconductor heterostructure
ATE499709T1 (en) LIGHT-EMITTING SEMICONDUCTOR COMPONENT
EP2017900A3 (en) Light emitting diode with improved structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07864309

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07864309

Country of ref document: EP

Kind code of ref document: A2