WO2008065977A1 - Exposure method, pattern forming method, exposure device, and device manufacturing method - Google Patents

Abstract

While illumination systems (18A, 18B) are almost simultaneously illuminating masks (20A, 20B) by illumination lights, a drive system drives mask stages (12A, 12B) and a substrate stage (14) so that the masks (20A, 20B) are scanned in the scan direction in synchronization with the substrate stage (14) on which a substrate (22) is mounted. Thus, it is possible to transfer patterns formed on the masks (20A, 20B) onto different regions of the substrate (22) via corresponding projection optical systems (PLM1, PLM2), respectively, almost simultaneously. That is, it is possible to transfer the patterns formed on a plurality of masks onto different regions on the substrate. Accordingly, it is possible to improve the throughput as compared to a case when one pattern region is formed on the substrate by one scan exposure.

Description

 Specification

 Exposure method, pattern forming method, exposure apparatus, and device manufacturing method

 The present invention relates to an exposure method, a pattern formation method, an exposure apparatus, and a device manufacturing method, and more specifically, an exposure method and pattern used when manufacturing a liquid crystal display element or a semiconductor element. The present invention relates to a forming method, an exposure apparatus suitable for carrying out the exposure method, the exposure method, a pattern forming method, and a device manufacturing method using the exposure apparatus.

 Background art

 Conventionally, in a lithographic process for manufacturing a display device such as a liquid crystal display element, various projection exposure apparatuses that transfer a pattern formed on a mask to a substrate via a projection optical system have been used. Yes. In particular, in a liquid crystal exposure apparatus, in recent years, a scanning exposure apparatus having a plurality of projection optical systems is used relatively frequently in order to expand an area that can be exposed at one time as a substrate for a display device becomes larger. ing. In this scanning type exposure apparatus, the light flux emitted from the light source is made uniform through an optical system including a fly-eye lens, etc., and then shaped into a desired shape by a field stop to illuminate the mask pattern surface. A plurality of illumination optical systems are provided. The plurality of illumination optical systems illuminate different partial areas (illumination areas) on the mask. The light beams that have passed through the mask form mask pattern images in different projection areas on the substrate through different projection optical systems. Then, the entire surface of the pattern area on the mask is transferred onto the substrate by synchronizing the mask and the substrate and scanning the projection optical system.

[0003] Square glass plates used in the manufacture of liquid crystal display elements have grown in size with the generation of power using a rectangular substrate with a side length of more than 500mm, and now each side has a size exceeding 2m. It has become. For this reason, step-and-scan type scanning exposure apparatuses are becoming mainstream in current liquid crystal exposure apparatuses (see, for example, Patent Document 1). In this step-and-scan type scanning exposure apparatus, the mask and glass plate are moved in synchronization with the scanning direction (the direction parallel to the long or short side of the plate) and formed on the mask. The scanning (scanning) exposure operation that transfers the pattern to one partition area (shot area) on the plate via the projection optical system and the stepping operation that moves stepwise in the non-scanning direction orthogonal to the scanning direction are alternated Repeated. In this way, for example, 6-sided taking 6 liquid crystal display element substrates from one glass plate and 8-sided taking 8 liquid crystal display element substrates from one glass plate are generally performed.

 [0004] However, in the conventional scanning exposure apparatus, the target chamfering is performed such that six scan exposure operations are performed in the case of six chamfering, and eight scan exposure operations are performed in the case of eight chamfering. Since the number of scan exposures depends on the number, the tact time has become longer as the number of chamfers increases. In addition, since the tact time increases / decreases depending on the number of chamfers, the performance of the entire line including the exposure apparatus and the coater's developer changes depending on the number of chamfers when inline connection is made with the coater's developer.

 [0005] Patent Document 1: Japanese Patent Laid-Open No. 2006-195353

 Disclosure of the invention

 Means for solving the problem

 [0006] The present invention has been made under the circumstances described above. From a first viewpoint, the present invention has a matrix arrangement of m rows n 歹 IJ (m≥n) on a substrate, and there are m X n pieces. In the exposure method for forming a pattern region, (m X n) pattern regions are formed in a matrix arrangement on the substrate by performing exposure less than (m X n) times. .

 [0007] According to this, since the target number of pattern areas can be formed on the substrate with a smaller number of exposures than the target number of pattern areas (number of chamfers) (m X n), the number of chamfers depends on the number of chamfers. Throughput can be improved compared to the case where exposure was performed a number of times.

 [0008] According to a second aspect of the present invention, a step of exposing a substrate using the exposure method of the present invention; a step of developing the exposed substrate; a step of processing the developed substrate; A first device manufacturing method including: Here, for example, the etching S is a force S corresponding to the above-described process, and “processing the substrate” means that the substrate is not limited to these, and some processing is performed on the substrate. In this specification, the term “processing” is used in terms of force.

According to this, since the substrate is exposed using the exposure method of the present invention, the production of the device It is possible to improve the performance.

 [0010] According to a third aspect, the present invention provides a pattern formation that forms (m X n) pattern regions on a substrate in a matrix arrangement of m rows and n columns (m≥n) by a scanning operation. The method is a pattern forming method in which (m X n) pattern regions are formed in a matrix arrangement on the substrate by scanning operations less than (m X n) times.

 Here, the scan operation may be an operation for forming a pattern on the substrate.

 That is, the scanning operation is not limited to the exposure operation. An example of the scanning operation is a substrate scanning operation.

 [0012] According to this, since the target number of pattern areas can be formed on the substrate by the number of scan operations less than the target number of pattern areas (number of chamfers) (m X n), the chamfering is performed. The throughput can be improved compared to the number of scan operations depending on the number.

[0013] From a fourth aspect, the present invention includes a step of forming a pattern on a substrate using the pattern forming method of the present invention; and a step of processing the substrate on which the pattern is formed. 2 is a device manufacturing method.

 [0014] According to this, since the pattern is formed on the substrate using the pattern forming method, it becomes possible to improve the productivity of the device.

 According to a fifth aspect of the present invention, there is provided an exposure apparatus for forming a substantially rectangular pattern region on a substrate in a matrix arrangement of m rows and n columns (m ≥ n), wherein the matrix columns A pattern generating device capable of forming the pattern region by exposing at least two regions apart from each other in a predetermined direction parallel to the direction; a substrate driving device for driving the substrate; and the m rows on the substrate. When forming the n rows of pattern regions, forming at least two pattern regions spaced apart by a natural number k times the dimension of the pattern region in the predetermined direction with respect to the predetermined direction on the substrate; And a control system that controls the pattern generation device and the substrate driving device so that the movement in the direction is alternately repeated.

According to this, when forming a pattern region of m rows and n columns (m≥n) on the substrate, the predetermined direction of the pattern region with respect to a predetermined direction parallel to the column direction of Matritas on the substrate The control system causes the pattern generation device and the substrate driving device to alternately repeat the formation of at least two pattern regions separated by a natural number k times the size of the substrate and the movement of the substrate in the predetermined direction. Be controlled. As a result, at most ((m-1) X n} exposures, that is, the number of exposures less than the target number of pattern areas (number of chamfers) (m X n), m rows and n columns on the substrate. A pattern area of (m≥n) can be formed. Therefore, the throughput can be improved as compared with the case where (m X n) pattern regions are formed on the substrate by the same number of exposures (m X n) as the target chamfering number.

 [0017] According to a sixth aspect of the present invention, there is provided an exposure apparatus that exposes a substrate to form a plurality of rectangular pattern regions on the substrate, each of which forms a pattern corresponding to the pattern region. A mask stage system on which a plurality of masks are mounted; an illumination system capable of illuminating the plurality of masks almost simultaneously with illumination light; and a mask stage system provided corresponding to each of the plurality of masks, and A plurality of projection optical systems that respectively project illumination light onto a projection area on the substrate; a substrate stage on which the substrate is mounted; and the masks are scanned in a scanning direction in synchronization with the substrate stage. And a driving system that drives the mask stage system and the substrate stage.

 According to this, each mask is scanned in the scanning direction by the drive system in synchronization with the substrate stage on which the substrate is mounted, with the illumination system illuminating a plurality of masks with illumination light almost simultaneously. In addition, the mask stage system and the substrate stage can be driven. Therefore, the patterns respectively formed on the plurality of masks can be transferred almost simultaneously to different regions on the substrate through the corresponding projection optical systems. In other words, it is possible to transfer the pattern formed on each of the plurality of masks to different areas on the substrate by the scanning exposure method. Therefore, the throughput can be improved as compared with the case where one pattern region is formed on the substrate by one scanning exposure.

[0019] According to a seventh aspect, the present invention provides an exposure apparatus that forms m X n pattern regions on a substrate in a matrix arrangement of m rows and n columns (m≥n), A pattern generation device capable of forming the pattern region by exposing two regions apart from each other in a direction parallel to the column direction of the matrix; and detecting the marks formed on the substrate, and the matrix At least 2 spaced apart in a direction parallel to the column direction m mark detection systems; and at least some of the 2m mark detection systems formed near both ends of each of the two regions on the substrate that are simultaneously exposed. In the third exposure apparatus, the interval between the at least 2m mark detection systems is set so that the two detected marks can be detected simultaneously.

 [0020] According to this, at least a part of the mark detection system can simultaneously detect each of the two marks formed in the vicinity of both end portions of each of the two regions to be exposed simultaneously on the substrate. Is possible. Therefore, it is possible to shorten the time required for the mark detection process and to improve the throughput as compared with the case of detecting the mark inside each area to be exposed.

 [0021] According to an eighth aspect of the present invention, there is provided a step of forming a pattern on a substrate using any of the first, second and third exposure apparatuses of the present invention; A third device manufacturing method comprising: developing the substrate; and processing the developed substrate.

[0022] According to this, it is possible to improve the productivity of the device.

 [0023] From a ninth viewpoint, the present invention provides a display panel in which a display device is formed on a substrate depending on whether the first, second, and third device manufacturing methods of the present invention are! / It is.

 Brief Description of Drawings

 FIG. 1 is a perspective view schematically showing a configuration of an exposure apparatus according to an embodiment.

 [FIG. 2] FIG. 2 (A) is a plan view showing five image fields, two masks, and plates extracted from the two projection optical system modules in FIG. 1, and FIG. 2 (B) is a projection. It is a figure for demonstrating the substantial image feed of an optical system module.

 FIG. 3 is a diagram for explaining the arrangement of alignment system AL;! To AL8.

 FIG. 4 is a block diagram schematically showing a configuration of a control system of the exposure apparatus of one embodiment.

 [FIG. 5] FIGS. 5 (A) and 5 (B) are diagrams showing a plate used in the case of 6 chamfering and 8 chamfering, and the arrangement of shot areas and alignment marks on the plate, respectively.

 [FIG. 6] FIGS. 6 (A) to 6 (D) are diagrams for explaining the flow of alignment mark detection operation in the case of six chamfering.

[Fig.7] Fig.7 (A) to Fig.7 (D) shows the flow of alignment mark detection operation in case of 8-chamfering. It is a figure for demonstrating.

 FIG. 8 is a diagram for explaining the arrangement and relationship between a mask in the case of 6 chamfering, a pattern area on the mask, and image fields of two projection optical system modules.

 [FIG. 9] FIG. 9 (A) to FIG. 9 (D) are diagrams for explaining an exposure sequence in the case of six chamfering.

 FIG. 10 is a diagram for explaining the arrangement and relationship between the mask in the case of eight chamfers, the pattern area on the mask, and the image fields of two projection optical system modules.

 FIG. 11 (A) to FIG. 11 (D) are diagrams for explaining an exposure sequence in the case of eight chamfering.

 [Fig.12] Fig.12 (A) and Fig.12 (B) adjust the positional relationship between the pattern areas PA and PB by adjusting the Y-axis direction position of the two masks in the case of 6 chamfering and 8 chamfering respectively. It is a figure which shows a method.

 FIG. 13 is a flowchart for explaining a semiconductor device manufacturing method.

 FIG. 14 is a flowchart for explaining a method of manufacturing a liquid crystal display element.

 BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, an embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic configuration of a step-and-scan type liquid crystal exposure apparatus 10 suitable for carrying out the exposure method (and pattern formation method) according to the present invention.

[0026] The exposure apparatus 10 includes a plate stage 14 arranged along the XY plane (horizontal plane), the Z axis direction upward facing the plate stage, and the Y axis direction on substantially the same XY plane. A pair of mask stages 12A and 12B arranged at a predetermined interval, and a plurality (in this case, five) of projection optical units 16A and 16B are arranged between the mask stages 12A and 12B and the plate stage 14, respectively. , 16C, 16D, 16E each including a pair of projection optical system modules PLM1, PLM2 and a rectangular area including all of the XY cross sections of the projection optical units 16A to 16E (hereinafter also referred to as exposure light as appropriate) Are provided with a pair of illumination systems 18A and 18B, respectively. As illumination light, for example, ultra-high pressure mercury run An ultraviolet emission line (eg, g-line, i-line, etc.) from a laser, ArF excimer laser light with a wavelength of 193 nm, or KrF excimer laser light with a wavelength of 248 nm is used.

 [0027] On one mask stage 12A, a rectangular mask 20A having a pattern region formed on one surface (the surface on the Z side in FIG. 1) is placed, and similarly on the other mask stage 12B. Is mounted with a rectangular mask 20B having a pattern region formed on one surface (the Z-side surface in FIG. 1). Corresponding to these, a large rectangular glass substrate (hereinafter referred to as “plate”) 22 is placed on the plate stage 14. This plate 22 is a substrate for a display device.

 [0028] The mask stages 12A and 12B are driven in a predetermined scanning direction (here, X) by a pair of mask stage drive systems 24 4A and 24B (not shown in FIG. 1, see FIG. 4) including a linear motor or the like. In addition to being reciprocated with a predetermined stroke in the axial direction (left and right in Fig. 1), it is finely driven in the XY plane (including rotation around the Z axis (Θ z rotation)).

 [0029] The plate stage 14 includes a plate stage drive system 26 (Fig.

 1 (not shown, see Fig. 4), it can be driven freely in the XY plane (including rotation around the Z axis (including Θ z rotation)). In addition, the plate stage 14 is driven by a minute drive in the Z-axis direction, tilt drive with respect to the XY plane (rotation around the X axis (θ X rotation), and rotation around the Y axis (Θ y) by the plate stage drive system 26. Rotation)) is possible.

[0030] The positional information of the mask stages 12A and 12B is a mask interferometer system 28 including a plurality of interferometers each irradiating a measurement beam onto a reflecting surface fixed or formed on the mask stages 12A and 12B (not shown in FIG. 1). The position information of the mask stages 12A and 12B thus measured is supplied to the main controller 50 (see FIG. 4). The mask interferometer system 28 includes a plurality of laser interferometers (position detection devices) that detect the position (X position) in the X-axis direction of the mask stage 12A that supports the mask 20A, as shown in a simplified manner in FIG. Mxl l, Mxl2, and laser interferometer (position detection device) that detects the position (Y position) of the mask stage 12A in the Y-axis direction Multiple positions that detect the X position of the mask stage 12B that supports the mask 20B Laser interferometers (position detection devices) Mx21 and Mx22 and a laser interferometer (position detection device) My2 for detecting the Y position of the mask stage 12B are provided. Therefore, the mask interferometer system 28 is It is possible to measure the X position, Y position, and θ z rotation amount (rotation information) of each of the stage 12A and 12B. In FIG. 2, for simplification of the drawing, the force is shown so that the end face of the mask is irradiated with an interferometer beam (length measuring beam). Actually, movement not shown in the mask stages 12A and 12B A mirror (or mirror-finished reflecting surface) is provided, which is configured to irradiate an interferometer beam.

 [0031] Position information (including rotation information (including θ ζ rotation information, θ χ rotation information, and Θ y rotation information)) in the X-axis and Y-axis directions of the plate stage 14 is fixed or formed on the plate stage 14. Measured by a plate interferometer system 30 (not shown in FIG. 1, see FIG. 4) including a plurality of interferometers each irradiating a measuring surface with a measurement beam, and the measured position information is supplied to the main controller 50 Has been. As shown in FIG. 2, the plate interferometer system 30 includes a plurality of laser interferometers (position detection devices) Pxl and Ρχ2 that detect the X position of the plate stage 14 that supports the plate 22, and the Y position of the plate stage 14. And a laser interferometer (position detection device) Py for detecting Therefore, the plate interferometer system 30 can measure the X position, the Y position, and the Θ z rotation amount (rotation information) of the plate stage 14. Further, the plate interferometer system 30 is configured such that the measurement axis of each interferometer is not greatly deviated from the center of the virtual lens with respect to the plurality of projection modules PL Ml and PLM2. In FIG. 2, for simplification of the drawing, a force indicating that the end surface of the plate is irradiated with an interferometer beam (measurement beam) Actually, a movable mirror (not shown) is applied to the plate stage 14. (Or a mirrored reflective surface) is provided and is configured to irradiate an interferometer beam against it!

 [0032] The position information of the plate stage 14 in the Z-axis direction is disclosed in a measurement system (not shown) that measures the surface position information of the surface of the plate 22, such as US Pat. No. 6,552,775. It is measured indirectly by the measurement system.

[0033] It should be noted that an encoder may be used in place of at least some of the interferometers constituting mask interferometer system 28 and plate interferometer system 30, or mask interferometer system 28 and plate interferometer. An encoder system may be provided in addition to the system 30, and the position information of the mask stages 12A and 12B and the plate stage 14 may be measured by a hybrid system of an interferometer system and an encoder system. [0034] Returning to FIG. 1, the five projection optical units 16A, 16B, 16C, 16D, and 16E that constitute the one projection optical system module PLM1 have the Z-axis direction in which the respective optical axes are orthogonal to the XY plane. Has been. As the projection optical units 16A, 16B, 16C, 16D, and 16E, those that form an erect image with a double-sided telecentric equal magnification system are used. Among these, the projection optical units 16A, 16B, and 16C are arranged at predetermined intervals along the Υ axis direction, and the remaining projection optical units 16D and 16E are slightly shifted to the + X side (right side in FIG. 1) of the Y axis. They are arranged at predetermined intervals along the direction. That is, in the present embodiment, the five projection optical units 16A, 16B, 16C, 16D, and 16E are arranged in a so-called zigzag pattern to constitute an array of projection optical units, and the mask stage 12A and the plate stage 14 include When scanned in the X-axis direction (see arrows A1 and A3 in Figure 1), the image fields (projection areas) of the five projection optical units 16A, 16B, 16C, 16D, and 16E are masks 2 OA and The entire surface of the rectangular area (shot area) to be exposed on the plate 22 can be covered.

That is, the image fields 16AI, 16BI, 16CI, 16DI, and 16EI of the projection optical units 16A, 16B, 16C, 16D, and 16E are trapezoidal as shown in the plan view of FIG. It has a staggered arrangement as shown in Fig. 2 (A). The shape of these image fields is defined by a field stop (not shown) arranged in the illumination system 18A or in each projection optical unit. Among the image fields 16AI, 16BI, 16CI, 16DI, and 16EI, the image fields 16AI and 16CI that are located at the extreme ends in the Y-axis direction are each a table whose outer ends are straight lines parallel to the X-axis. The remaining image fields 16BI, 16DI, and 16EI have the same isosceles trapezoid shape. In this embodiment, when the image fields 16DI and 16EI are translated by a predetermined distance in the X direction, as shown in FIG. 2 (B), as a whole, the length is W3 and the width is B. A rectangular area is formed. In other words, in the present embodiment, the partial projection areas (image fields 16AI to 16EI) irradiated by the projection optical units 16A to 16E are overlapped and synthesized to form a substantial projection area (shown in FIG. 2B). A rectangular area elongated in the Y-axis direction) is formed. Therefore, the five projection optical units 16A, 16B, 16C, 16D, and 16E that constitute the projection optical system module PLM1 are each a single rectangular image image shown in FIG. This is equivalent to a projection optical system having a threshold. The projection optical units 16A, 16B, 16C, 16D, and 16E actually constitute the projection optical system module PLM1 as shown in FIG. 2A, but the projection optical units 16A, 16B, and 16C. In order to show the mutual positional relationship between 16D and 16E, illustration of some components such as the housing of the projection optical system module PLM1 is omitted in FIG.

 The other projection optical system module PLM2 is configured in exactly the same manner as the projection optical system module PLM1 described above. As for the projection optical system having the same configuration as the projection optical system modules PLMl and PLM2 of this embodiment, for example, see Japanese Patent Application Laid-Open No. 2001-215718 (corresponding to US Pat. No. 6,552,775). It is disclosed in detail.

 Furthermore, the exposure apparatus 10 includes eight alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, and AL8 of the offifism system. These eight alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, AL8 are positioned at a predetermined distance on the + X side of the projection optical modules PLM1, PLM2, as shown in FIG. Arranged at predetermined intervals along the Y-axis direction. These eight alignment systems AL;! To AL8 are held above the plate stage 14 by a plate-like holding member 32 extending in the Y-axis direction along the XY plane, and the holding member is supported by a support member (not shown). Supported on the surface. The alignment systems A LI, AL2, AL3, AL4, AL5, AL6, AL7, AL8, for example, irradiate the target mark with a broadband detection light beam that does not expose the resist on the plate 22, and the reflected light from the target mark. FIA (Field Image Alignment) of the image processing method that images the image of the target mark imaged on the light-receiving surface and the image of the index (not shown) using an image sensor (CCD) etc. and outputs the imaged signals Each sensor of the system is used. Not limited to the FIA system, the target mark is irradiated with coherent detection light to detect scattered light or diffracted light generated from the target mark, or two diffracted lights generated from the target mark (for example, of the same order) Of course, it is possible to use the alignment sensor for detecting the interference by singly or in combination. The placement of alignment AL;! To AL8 will be further described later.

In addition, a mark plate MP having a longitudinal direction in the Y-axis direction is disposed in the vicinity of the −X side end of the upper surface of the plate stage 14. The surface of the mark plate MP is placed on the plate stage 14. The height is set so as to be substantially flush with the surface of the placed plate 22. On the surface of this mark plate MP, as an example, there are 8 reference mark areas corresponding to the above-mentioned eight alignment systems AL1, AL2, AL3, AL4, 8 and 6 and 7 and 8, respectively. ^ [Is formed. That is, the eight reference mark areas on the mark plate MP can be detected simultaneously and individually with the eight alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, AL8. .

 [0039] Further, within the plate stage 14, among the eight reference mark areas FM on the mark plate MP, for example, the remaining six reference mark areas FM excluding the two reference mark areas FM in the center are respectively below. Six mark image detection systems MD1, MD2, MD3, MD4, MD5, and MD6 (not shown in FIG. 1, refer to FIG. 4), each including a lens system and an image pickup device (CCD, etc.), are arranged at positions. ing. These mark detection systems MD;! To MD6 are projection optical units 16A to 16E of alignment marks (not shown) on the mask 20A or 20B illuminated by exposure light; And the position information of the alignment mark (image) relative to the reference mark (image) is supplied to the main controller 50.

 [0040] Next, the arrangement of the alignment system AL;! To AL8 will be described.

 Here, it is assumed that a rectangular glass plate having a long side LI X a short side L2 is used as the plate 22. As shown in Fig. 3, if the interval between alignment AL;! To AL8 is WA1 to WA4 and WB;! To WB4, WA;! To WA4 and WB;! To WB4 force (11) Alignment AL;! To AL8 are arranged so as to satisfy the conditions of (1) to (5).

 WAK L1 / 4 ••• (l-i)

 WA2 <Ll / 4-• (1-2)

 WA3 <Ll / 4-• (1-3)

 WA4 <Ll / 4-• (1-4)

 WB3 <L2-• (2)

 WB2> L2 / 3…)

WB4 <L1-• (4) WBK L2 / 3 '' (5)

 It should be noted that WA;! To WA4 should be as large as possible within the range satisfying the conditions of formulas (11) to (5).

 Next, the alignment sequence of the plate 22 in the case where so-called six chamfering is performed in the exposure apparatus 10 of the present embodiment will be described. As the plate 22, for example, a rectangular glass plate having an L1 of 2800 mm and an L2 force S2400 mm, that is, a ratio of L1 to L2 of about 32:27 is used.

 [0044] As a premise, as shown in FIG. 5 (A), each of the six shot areas SA of the plate 22;! To SA6, one near each of the four corners, a total of 24 alignment marks AM Is formed. Of these 24 alignment marks AM, the positional relationship force S of each of the six alignment marks AM located in the same straight line in the Y-axis direction, the alignment system AL;! To AL5, AL7 The arrangement of 24 alignment marks AM is determined so as to almost coincide with.

 In this case, the main controller 50 drives the plate stage 14 in the XY plane while monitoring the position information of the plate stage 14 measured by the plate interferometer system 30, so that FIG. The three shot areas SA2 lined up in the Y-axis direction on the plate 22 within the detection field of the alignment system 8, 1, 2, 3, 8, 4, 8, 5, 7 , SA4, SA6 Position each at the position where two alignment marks AM are located.

 [0046] Then, the main controller 50 has the alignment system Hashi 1, Hashi 2, Hashi 3, Hachi 4, Hashi Hoshi 5 with the plate stage 14 positioned at the position shown in FIG. , Measure the position information of the six alignment marks AM (position information of the alignment marks centered on the unillustrated index) almost simultaneously. At the same time, the main controller 50 determines the XY plane of the six alignment marks AM based on the measurement results of the position information of the six alignment marks AM and the measurement values of the plate interferometer system 30 at the time of the measurement. The position information (XY coordinate value) is calculated and stored in a memory (not shown).

[0047] After the above measurement is completed, main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow B. Drive the distance and position it at the position shown in Fig. 6 (B). And The main controller 50 sets the alignment system Hashi 1, Hashi 2, Hashi 3, Hachi 4, Hashi 5, Hashi 7 with the plate stage 14 positioned at the position shown in FIG. The position information (position information of the alignment mark centered on the unillustrated index) is measured almost simultaneously, and the measurement result and the plate interferometer at the time of measurement are used. Based on the measurement values of the system 30, position information (XY coordinate values) of the six alignment marks AM in the XY plane is calculated and stored in a memory (not shown).

 [0048] After the measurement is completed, main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow B. Drive the distance and position it at the position shown in Fig. 6 (C). Then, the main controller 50 positions the alignment stage 8, 1, 2, 2, 3, 4, 4, 5, 5, 8, with the plate stage 14 positioned at the position shown in FIG. 6 (C). 7 is used to measure the position information (position information of the alignment mark centered on the unillustrated index) of the six alignment marks 8 ^ [almost at the same time. Based on the measurement values of the interferometer system 30, position information (XY coordinate values) of the six alignment marks AM in the XY plane is calculated and stored in a memory (not shown).

 [0049] After the above measurement is completed, main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow B. Drive the distance and position it at the position shown in Fig. 6 (D). Then, the main control unit 50 positions the alignment stage 8, 1, 2, 2, 3, 4, 4, 5, 5, 8, with the plate stage 14 positioned at the position shown in FIG. 6 (D). 7 is used to measure the position information (position information of the alignment mark centered on the unillustrated index) of the six alignment marks 8 ^ [almost at the same time. Based on the measurement values of the interferometer system 30, position information (XY coordinate values) of the six alignment marks AM in the XY plane is calculated and stored in a memory (not shown).

[0050] Thus, in this embodiment, 6 alignment marks on the plate 22 are simultaneously measured using 6 alignment systems of 8 alignment systems AL;! To AL8. The alignment mark position information of 6 X 4 = 24 points (4 points in each of the six shot areas) can be measured only by performing simultaneous measurement of the alignment marks four times. [0051] Next, the alignment sequence of the plate 22 when the exposure apparatus 10 performs so-called eight chamfering will be described. In this case, as the plate 22, for example, a rectangular glass plate having L1 of 2800 mm and L2 force S2400 mm, that is, a ratio of L1 to L2 of about 36:32 is used.

 [0052] As a premise, as shown in FIG. 5 (B), 32 alignment marks AM are formed in the vicinity of the four corners of each of the eight shot regions of the plate 22, one in total. . Of these 32 alignment marks AM, the positional relationship force of each of the eight alignment marks AM that are positioned on the same straight line in the Y-axis direction is almost identical to the positional relationship of alignment system AL;! As shown, the arrangement of 32 alignment marks AM is determined.

 In this case, the main controller 50 drives the plate stage 14 in the XY plane while monitoring the position information of the plate stage 14 measured by the plate interferometer system 30, so that FIG. ). In Fig. 7 (A), four shot areas SA2, SA4, SA6, aligned in the Y-axis direction on the plate 22 within the detection field of alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, AL8. There are two alignment marks AM in SA8, a total of eight alignment marks AM!

 [0054] Then, main controller 50 positions position information of the eight alignment marks AM using alignment system AL;! To AL8 in a state where plate stage 14 is positioned at the position shown in FIG. (Alignment mark position information centered on an unillustrated index) is measured almost simultaneously, and based on the measurement result and the measured value of the plate interferometer system 30 at the time of measurement, eight alignment marks The position information (XY coordinate value) in the XY plane of AM is calculated and stored in a memory (not shown).

[0055] After the above measurement is completed, main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow C. Drive the distance and position it at the position shown in Fig. 7 (B). Then, main controller 50 positions position information (index not shown) of eight alignment marks AM using alignment system AL;! To AL8 with plate stage 14 positioned at the position shown in FIG. (Alignment mark position information centered on) is measured almost simultaneously, and based on the measurement results and the measured values of the plate interferometer system 30 at the time of measurement, eight alignment marks are measured. The position information (XY coordinate value) of the ment mark AM in the XY plane is calculated and stored in the memory (not shown).

[0056] After the above measurement is completed, main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow C. Drive the distance and position it at the position shown in Fig. 7 (C). Then, the main controller 50 positions the eight alignment marks AM using the alignment system AL;! To AL8 (index not shown) with the plate stage 14 positioned at the position shown in FIG. (Alignment mark position information centered at the center) is measured almost simultaneously, and based on the measurement results and the measured values of the plate interferometer system 30 at the time of measurement, the eight alignment marks AM within the XY plane are measured. Calculate the position information (XY coordinate value) and store it in the memory (not shown).

[0057] After the above measurement is completed, main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow C. Drive the distance and position it at the position shown in Fig. 7 (D). Then, main controller 50 positions position information (index not shown) of eight alignment marks AM using alignment system AL;! To AL8 with plate stage 14 positioned at the position shown in FIG. (Alignment mark position information centered at the center) is measured almost simultaneously, and based on the measurement results and the measured values of the plate interferometer system 30 at the time of measurement, the eight alignment marks AM within the XY plane are measured. Calculate the position information (XY coordinate value) and store it in the memory (not shown).

As described above, in the present embodiment, the eight alignment marks AL on the plate 22 are simultaneously measured using the eight alignment marks AL;! To AL8. By performing only 4 times, it is possible to measure the alignment information of 8 X 4 = 32 points (4 points each in 8 shot areas).

[0059] Further, as is clear from the above description, in the exposure apparatus 10 of the present embodiment, at least 6 alignments among alignment systems AL;! To AL8 in the case of 6 chamfering and 8 chamfering. As a result, it is possible to measure alignment mark position information on the plate in the same sequence for 6 and 8 chamfers. In other words If this is the case, in order to achieve such alignment of 6 and 8 chamfers in the same sequence, alignment system AL; ! ~ Set AL 8 layout (interval)! /.

 Next, an exposure operation performed by the exposure apparatus 10 of the present embodiment will be described. First, the case of 6 chamfering will be described.

 [0061] The width in the non-scanning direction (here, the Y-axis direction orthogonal to the X-axis direction) perpendicular to the scanning direction of the substantial image field of each of the projection optical system modules PLM1 and PLM2 is also shown in FIG. As mentioned above, it is W3. Also, the distance in the non-scanning direction between the edges of the projection optical modules PLM1 and PLM2 in the non-scanning direction is W1, and the edges of the projection optical modules PLM1 and PLM2 that are far from each other in the image field Let W2 be the distance between them in the non-scanning direction.

 In the present embodiment, Wl, W2, and W3 are set so as to satisfy the following equations (6) to (8), respectively.

 [0063] W2≥L2 · · · ½)

 Wl≤Ll / 4 '' (7)

 W3≥L2 / 3 '' (8)

 As long as the above formulas (1) to (8) hold, it is advantageous in terms of apparatus cost that W3 is as small as possible.

As shown in FIG. 8, pattern areas PA and PB are formed on the masks 20A and 20B mounted on the mask stages 12A and 12B, respectively. Here, it is assumed that the same pattern for the display element is formed in the pattern areas PA and PB.

[0065] In the pattern area PA, the width of the blank area on the + Y side of the mask 12A (the pattern or area where the pattern is not formed) is as narrow as possible (for example, approximately zero), and the width of the blank area on the Y side is widened. Thus, it is formed on the mask substrate of the mask 20A closer to the + Y side. On the other hand, in the pattern area PB, the width of the blank area on the Y side of the mask 20B is as narrow as possible (eg, almost zero), and the width of the blank area on the + Y side is widened on the mask substrate of the mask 20B. It is formed on the Y side. As a result, the distance between the pattern areas PA and PB shown in Fig. 8 PI is about L2 / 3, and the distance P2 in the non-scanning direction between the far edges of PA and PB in the pattern area is about L2.

[0066] As a premise, masks 20A and 20B are mounted on mask stages 12A and 12B by a transport system (not shown), respectively, and the mark image detection system MD;! To MD6, alignment systems AL1 to AL8, and Mark plate MP using mask reference mark and alignment system AL;! ~ AL8 baseline measurement force etc. It is assumed that the procedure is performed in the same way as normal.

 [0067] In this state, main controller 50 measures the position information of a total of 24 alignment marks AM on plate 22 (see FIG. 5A) according to the procedure described above! Save measurement results to memory.

 [0068] After such a preparatory work, the pattern areas PA and PB of the masks 20A and 20B are transferred to the six shot areas S1 to S6 on the plate 22 in the following procedure.

 [0069] First, main controller 20 monitors the measurement values of plate interferometer system 30 and mask interferometer system 28, and the result of measurement of positional information of alignment mark AM performed in advance, and Based on the measurement result of the baseline, the plate stage 14 and the mask stages 12A and 12B are moved to the acceleration start positions for exposure of the shot areas SA2 and SA6 on the plate 22, respectively.

 Next, main controller 20 starts scanning plate stage 14 in the + X direction as indicated by arrow A3 in FIG. 1, and in synchronization with this, mask stages 12A and 12B are respectively indicated by arrows. Scanning is started as indicated by Al and A2.

 [0071] When the plate stage 14 and the mask stages 12A and 12B reach the target scanning speed, respectively, the plate stage 14 and the mask stage 12A, and the plate stage 14 and the mask stage 12B reach the constant speed synchronization state. After a predetermined settling time, the pattern areas PA and PB of the masks 20A and 20B begin to be illuminated with illumination light, and scanning exposure on the shot areas S A2 and SA6 on the plate 22 is started. During scanning exposure, the field stop (not shown) inside the illumination systems 18A and 18B is controlled so that illumination light is not irradiated to the outside of the pattern areas PA and PB of the masks 20A and 20B. Yes.

[0072] As described above, scanning exposure for shot areas SA2 and SA6 on plate 22 is started. The state immediately after being applied is schematically shown in Fig. 9 (A). In FIG. 9 (A), for convenience of illustration, the force shown in the figure is as if the plate 22 (and masks 20A and 20B) are fixed and the projection optical system modules PL Ml and PLM2 are moving. In this case, the projection optical modules PLM1 and PLM2 are fixed, and the plate 22 (and masks 20A and 20B) moves (see FIG. 1). In FIG. 9 (B) to FIG. 9 (D), the projection optical system modules PLM1 and PLM2 are moved relative to the plate 22 for the same reason! The

 [0073] Then, when the scanning exposure for the shot areas SA2 and SA6 on the plate 22 is completed, the pattern areas PA and PB of the masks 20A and 20B are transferred to the shot areas SA2 and SA6 on the plate 22 (FIG. 9 ( See B)). In FIG. 9 (B), the shot area with the shaded line is the shot area that has been transferred. The same applies to FIGS. 9C and 9D.

 [0074] Next, main controller 50 monitors the measurement value of plate interferometer system 30, and based on the result of measurement of position information of alignment mark AM performed in advance and the measurement result of baseline. Then, in order to move the plate stage 14 to the acceleration start position for the exposure of the shot area SA4 on the plate 22, the plate stage 14 is moved in the + Y direction approximately the same distance as the dimension of the shot area in the Y-axis direction.

 Next, main controller 50 performs scanning exposure on shot area SA4 by scanning plate stage 14 and mask stage 12A (and 12B) in synchronism with each other in the reverse direction. FIG. 9B shows a state immediately after this scanning exposure is started. In this case, the illumination of illumination light from the illumination system 18B is stopped by the main controller 50.

 Main controller 50 repeats the same procedure thereafter, and performs simultaneous scanning exposure for transferring pattern areas PA and PB to shot areas SA1 and SA5 on plate 22 (see FIG. 9C), shots Scan exposure (see Fig. 9 (D)) is performed to transfer pattern area PA to area SA3.

 [0077] By doing in this way, six-chamfer exposure can be realized by four scanning exposures.

Next, an exposure operation in the case of eight chamfering performed by the exposure apparatus 10 will be described.

In this case, as shown in FIG. 10, in the pattern area PA on the mask 20A, the width of the blank area on the + Y side becomes wide, and the width of the blank area on the Y side becomes as narrow as possible (for example, approximately zero Is formed on the mask substrate of the mask 20A so as to be closer to the Y side. On the other hand, the pattern area ΡΒ is placed on the glass substrate of the mask 20 — so that the width of the blank area on the heel side becomes wider and the width of the blank area on the heel side becomes as narrow as possible (for example, almost zero). It is biased to the side. As a result, the interval P1 is about L1 / 4, and the distance Ρ2 is about 3 X (L1 / 4).

 [0080] Main controller 50 performs step-and-scan exposure by the same sequence as in the case of the above-described six chamfering (partially different control of illumination system 18B), so that shot area SA2 , Pattern area PA, ΡΒ almost simultaneously transferred to SA6 (see Fig. 11 (A)), pattern area PA, に 対 す る almost transferred to shot area SA4, SA8 (see Fig. 11 (B)), shot area SA1,, The pattern areas PA and に 対 す る are transferred almost simultaneously to SA5 (see FIG. 11C), and the pattern areas PA and に 対 す る are transferred almost simultaneously to the shot areas SA3 and SA7 (see FIG. 11D). In other words, eight chamfering can be realized with four scanning exposures. In FIGS. 11A to 11D, the shot area where the pattern area has been transferred immediately before is shown with a shadow line, and the shot area where the pattern area has been transferred before that is shown. The area is shown with a mesh pattern!

 [0081] Further, even when the substrate is rotated 90 degrees to change the long side and the short side of the substrate to change the 6 chamfering and the 8 chamfering, both can be realized by four scanning exposures. The throughput can be almost the same.

 Further, according to the present embodiment, in the case of 6 chamfering and 8 chamfering, at least the plate stage 14 and the mask stages 12A and 12B can be driven according to the same sequence. Even when in-line connection with the coater / developers is possible, the tact time can be made almost constant regardless of whether the chamfering is done with 6 or 8 chamfers, and the entire line including the exposure system and the coater / developers. Performance can be maintained.

[0083] As described above, according to the present embodiment, a pattern region (shot region) of m rows and η columns (m≥n), for example, 3 rows and 2 columns, or 4 rows and 2 columns, is formed on the plate 22. The two shot areas (pattern areas) separated by the same distance as the dimension in the Y-axis direction of the shot area in the Y-axis direction parallel to the column direction of the matrix on the plate 22, and the Y-axis of the plate 22 The main controller 50 causes the lighting system 18A, 18B and mask stages 12A and 12B (mask stage drive systems 24A and 24B) and plate stage 14 (plate stage drive system 26) are controlled. As a result, at most ((m – 1) X n} exposures, that is, exposures that are less than the target number of pattern areas (number of chamfers) (m X n), m rows n on the plate 22歹 l] (m≥n) can form a shot area (pattern area). Therefore, the throughput is improved compared to the case where (m X n) pattern areas are formed on the plate 22 with the same number of exposures (m X n) as the target chamfer number! Can be achieved.

In addition, according to exposure apparatus 10 according to the present embodiment, main controller 50 drives mask stage while illumination systems 18A and 18B illuminate a plurality of masks 20A and 20B with illumination light almost simultaneously. The mask stages 12A and 12B and the plate stage are scanned in the scanning direction in synchronization with the plate stage 14 on which the plate 22 is mounted via the systems 24A and 24B and the plate stage drive system 26. 14 can be driven. As a result, the patterns formed on each of the plurality of masks can be platened through the five projection optical units 16A, 16B, 16C, 16D, and 16E, respectively, which can support the corresponding projection optical system modules PLM1 and PLM2. It can be transferred to different areas on 22 almost simultaneously. That is, the patterns formed on the plurality of masks can be transferred to different regions on the plate 22 by the scanning exposure method. Therefore, the throughput can be improved compared to the case where one pattern area is formed on the plate 22 by one scanning exposure.

Yes

 In the description so far, the case of performing exposure for the second and subsequent layers has been described, but the number of target pattern areas (number of chamfers) is also determined during the exposure of the first layer by the above-described sequence. ) The target number of pattern areas can be formed on the plate 22 with fewer exposures than (m X n).

[0086] Further, according to the present embodiment, the interior of each of the two shot areas that are simultaneously exposed on the plate 22 by at least some of the alignment systems AL;! To AL8. Because it is possible to detect two alignment marks AM formed in the vicinity of both ends of the mark at the same time, the mark detection process is performed compared to the case of detecting the alignment marks inside each shot area to be exposed. Shortens the time it takes to complete, and in turn sloops It is possible to improve the network.

 Further, as is clear from the above description, according to the present embodiment, when performing 6 chamfering or 8 chamfering from a large plate, in any case, a small mask is used without using a large mask. The four scan exposures required can improve the cost performance of the equipment. In addition, since a large mask is not required, infrastructure for manufacturing a large mask is not required even if the substrate is enlarged.

 [0088] In the above embodiment, two pattern regions on the plate 22 are separated by the same distance as the dimension of the pattern region (shot region) in the predetermined direction with respect to a predetermined direction parallel to the matrix column. However, the present invention is not limited to this. That is, two pattern areas separated by a natural number k times, for example, twice or three times the dimension of the pattern area (shot area) in the predetermined direction with respect to a predetermined direction parallel to the matrix column are placed on the plate (substrate). It may be formed, or not limited to two pattern areas, but three or more pattern areas may be simultaneously formed on the substrate. In any case, the target number of pattern areas can be formed on the plate 22 with a smaller number of exposures than the number of target pattern areas (the number of chamfers) (m X n).

 Further, in the above embodiment, 6 chamfering or 8 chamfering has been described. However, the present invention is not limited to this, and two masks are used as in the above embodiment, and the interval between the two masks in the non-scanning direction is set. By setting according to the number of rows m in the matrix, if m is an even number, m x n pattern areas are formed in a matrix on the substrate by (m / 2 X n) exposures. It is also possible. In this case, if m is an odd number, m x n pattern regions may be formed in a matrix arrangement on the substrate by Km + l) / 2 X n} exposures. Here, when m is an even number, the distance between the two masks in the non-scanning direction is a distance k = (m / 2−1) times the dimension of the pattern region in the non-scanning direction. When m is an odd number, the distance between the two masks in the non-scanning direction is a distance k = {(m + 1) / 2−1} times the dimension of the pattern region in the non-scanning direction.

In the above-described embodiment, the force S described for the case where the masks 20A and 20B are mounted on separate mask stages is not limited to this, and the masks 20A and 2 are not limited to a single mask stage. The OB force S and the non-scanning direction may be arranged at a predetermined distance. In such a case, the pattern stage PA and PB of the masks 20A and 20B can be transferred onto the plate 22 almost simultaneously by scanning the mask stage in synchronization with the plate stage 14 during scanning exposure. become. In this case, it is desirable that the positions of the masks 20A and 20B can be individually adjusted on the mask stage.

 [0091] When exposure is performed using the exposure apparatus of the above embodiment, the pattern areas of the masks 20A and 20B are divided into a plurality of parts, and the same pattern is formed in each of the divided areas. By performing exposure in this sequence (four times of scanning exposure), a larger number of small-sized pattern regions can be formed on the plate 22. For example, by dividing the pattern area of the masks 20A and 20B into three in the scanning direction, 18 pattern areas can be formed on the plate 22 in a 3 × 6 matrix arrangement. In this case, for example, a part of the four scanning exposures, for example, the first two exposures, a part of the three divided areas of the masks 20A and 20B, for example, only two divided areas, It may be transferred onto the plate 22. In this case, 15 pattern regions can be formed on the plate 22 in a 3 × 5 matrix arrangement. In addition, by dividing the pattern area of the masks 20A and 20B into 4 (2 divisions in the scanning direction and 2 divisions in the non-scanning direction), 24 pattern areas are arranged on the plate 22 in a 6-by-4 matrix arrangement. Can be formed.

 In the above embodiment, the force described for adjusting the pattern formation position (drawing position) on the mask in accordance with the number of chamfers is not limited to this, and the position of the mask in the Y-axis direction is not limited to this. Good as an adjustment.

 That is, for example, in the case of 6 chamfering, as shown in FIG. 12 (A), the mask 20A is driven in the + Y direction indicated by the arrow yl through the mask stage 12A and the mask stage 12B. By driving the mask 20B in the Y direction indicated by the arrow y2, the distance P1 between the pattern areas PA and PB is about L2 / 3, and the distance between the far edges of the pattern areas PA and PB The distance P2 in the non-scanning direction may be about L2. In this case, it is sufficient that the width of the masks 20A and 20B in the non-scanning direction is approximately L2 / 3, which is advantageous in that the mask can be made smaller than in the above-described embodiment.

[0094] Further, for example, in the case of eight chamfering, as shown in Fig. 12B, the mask stage 12A is interposed. Then, the mask 20A is driven in the Y direction indicated by the arrow y3 and the mask 20Β is driven in the + Υ direction indicated by the arrow y4 via the mask stage 12 Β so that the distance between the pattern areas PA and PB is P1. May be about L1 / 4, and the distance P2 in the non-scanning direction between the far edges of PA and PB in the pattern area may be about 3 X (L1 / 4).

[0095] By the way, in the outer periphery of the plate, unevenness may occur due to film formation or resist coating, and the outer periphery may not be used immediately for device manufacture. In such cases, the effective area should be slightly inside (approximately 10 to 20 mm) from the outer edge of the plate. If there is such an effective area, the plate size (L1 X L2) in the above embodiment may be replaced with the effective area dimension.

 [0096] In the above embodiment, the force S, the mask 20A and the mask 20B described in the case where the same pattern is formed in the pattern region on one surface of the mask 20A and the one surface of the mask 20B. Different patterns may be formed in the pattern region.

 Further, double exposure may be performed on each shot region of the plate 22 using the mask 20A and the mask 20B in which different patterns are formed in the pattern region, and the projection optical system modules PLM1 and PLM2. .

 [0098] In each of the above embodiments, as illumination light, for example, infrared or visible single wavelength laser light oscillated from a DFB semiconductor laser or fiber laser is used, for example, erbium (or both erbium and ytterbium). ) May be used, and harmonics that are amplified with a fiber amplifier doped with light and then converted into ultraviolet light using a nonlinear optical crystal may be used.

 [0099] Further, as the light source, a light source that generates vacuum ultraviolet light such as F laser light having a wavelength of 157 nm, Kr excimer laser light having a wavelength of 146 nm, Ar excimer laser light having a wavelength of 126 nm may be used. A solid laser (wavelength: 355 nm, 266 nm) or the like may be used.

 [0100] In the above embodiment, the projection optical system modules PLM1 and PLM2 have been explained for the case of a multi-lens projection optical system having five projection optical units, and the number of projection optical units is Not limited to one or more. The projection optical system is not limited to a multilens projection optical system, and may be a projection optical system using an Offner type large mirror.

[0101] In the above embodiment, the projection optical system modules PLM1 and PLM2 are used as projection magnifications. However, the present invention is not limited to this, and the projection optical system may be either a reduction system or an enlargement system. In particular, when an enlargement system is used as the projection optical system, it is possible to use a smaller mask, so that the mask stage can be downsized and the illumination system can be downsized. For this reason, the control performance of the mask stage can be expected to be improved, and the degree of freedom of arrangement of the mask stage and illumination system is improved. However, in this case, the magnification of the projection optical system (projection magnification) is taken into consideration so that projection images of patterns adjacent to each other in the non-scanning direction among the patterns formed on the mask do not overlap on the force plate. Therefore, it is necessary to design the layout of the pattern. The projection optical system may be any of a refractive system, a reflective system, and a catadioptric system, and the projected image may be an inverted image.

In the above embodiment, force using a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern 'dimming pattern') is formed on a light-transmitting mask substrate can be used instead of this mask. As disclosed in US Pat. No. 6,778,257, an electronic mask (variable molding mask) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed You can use it. For example, when using a variable molding mask that uses a DMD (Digital Micro-mirror Device), which is a type of non-light emitting image display element (also called a spatial light modulator), prepare two variable molding masks. Two variable molding masks are arranged on substantially the same plane at a predetermined interval in the non-scanning direction (Y-axis direction). Then, during exposure, the distance between the edges close to each other in the non-scanning direction is P1 described above, and the distance between the edges farther from each other in the non-scanning direction satisfies P2 described above. Only the mirror element group within the range to be used may be used for pattern generation. That is, a mirror element outside the range is always turned off, and each mirror element included in the two mirror element groups within the range is turned off according to the pattern data to generate light including pattern information. The substrate (plate 22) may be moved in the scanning direction in synchronization with a change in light including pattern information generated by two variable shaping masks. As a result, the pattern corresponding to the light including the pattern information generated by the two variable shaping masks is transferred to the two regions on the plate 22 through the projection optical system by the scanning exposure method. In this case, the variable molding mask has the length in the Y-axis direction as described above. If there is more than P2, only one may be provided. In such a case, only two mirror element groups corresponding to two mirror element groups within the above range may be used for pattern generation. Therefore, in the scanning type exposure apparatus using this variable shaping mask, the same control sequence as that of the above-described embodiment is adopted, so that the Y axis of the shot area with respect to the Y axis direction parallel to the column direction of the matrix on the plate 22 is used. In order to alternately repeat the formation of two shot areas (pattern areas) separated by the same distance as the dimension in the direction and the movement of the plate 22 in the Y-axis direction, the variable molding mask and The plate stage 14 (plate stage drive system 26) is controlled. Thereby, an effect equivalent to that of the above embodiment can be obtained.

 Heretofore, the case where the present invention is applied to a projection exposure apparatus that performs scanning exposure involving step-and-scan operation of a plate (substrate) has been described, but the present invention is not limited thereto. The present invention can also be applied to a proximity type exposure apparatus that does not use a projection optical system. The present invention can also be applied to a step-and-repeat exposure apparatus (so-called stepper) or a step-and-stitch exposure apparatus. Even in such an exposure apparatus, by alternately repeating the step of simultaneously forming at least two pattern regions separated in a predetermined direction on the substrate and the step of moving the substrate in the predetermined direction, An effect equivalent to that of the above embodiment can be obtained.

 In addition, the present invention is applied to, for example, an immersion type exposure apparatus in which a liquid is filled between a projection optical system and a wafer as disclosed in, for example, US Patent Application Publication No. 2005/0259234. Also good.

 Further, as disclosed in, for example, pamphlet of International Publication No. 2001/035168, an exposure apparatus (lithography) that forms line and space patterns on a wafer by forming interference fringes on the wafer. The present invention can also be applied to a system.

Further, the use of the exposure apparatus is not limited to an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern onto a square glass plate. For example, an exposure apparatus for semiconductor manufacturing, a thin film magnetic head, a micromachine, It can be widely applied to an exposure apparatus for manufacturing DNA chips and the like. In addition, reticles or reticles used in optical exposure equipment, EUV exposure equipment, X-ray exposure equipment, electron beam exposure equipment, etc., which are made only by microdevices such as semiconductor elements. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern onto a glass substrate or a silicon wafer in order to manufacture a mask. Note that the object to be exposed is not limited to a glass plate. For example, a wafer, a ceramic substrate, a film member, or a mask.

 Note that, until now, exposure that forms (m X n) pattern regions in a matrix arrangement on the substrate at least by a scan operation of the substrate, which is less than (m X n) times. Although the apparatus has been described, a method of forming (m X n) pattern regions in a matrix arrangement on a substrate by a scanning operation is not limited to an exposure apparatus, for example, Japanese Patent Laid-Open No. 2004-130312 It is also possible to use an element manufacturing apparatus equipped with an ink jet type functional liquid application device similar to the ink jet head group disclosed in the above.

[0108] The ink jet head group disclosed in the above publication discloses a substrate (for example, PET, glass, silicon, paper, etc.) by discharging a predetermined functional liquid (metal-containing liquid, photosensitive material, etc.) from a nozzle (discharge port). Etc.) are provided. Therefore, two functional liquid applicators such as the ink jet heads are prepared, and these two functional liquid applicators are arranged on substantially the same plane at a predetermined interval in the non-scanning direction (Y-axis direction). Deploy . In this case, only the inkjet heads within the range satisfying the condition that the distance between the edges close to each other in the non-scanning direction is P1, and the distance between the edges farther from each other in the non-scanning direction is P2 described above. May be used for pattern generation. That is, an inkjet head outside the range is always turned off, and each inkjet head included in the two inkjet head groups within the range is turned on / off according to the pattern data to apply the functional liquid to the substrate. The substrate may be moved in the scanning direction in synchronization with the on / off of each ink jet head included in one ink jet head group. As a result, two pattern areas are formed on the substrate by the functional liquid applied by the two functional liquid applying apparatuses. In the element manufacturing apparatus including these two functional liquid application apparatuses, the same control sequence as that of the above-described embodiment may be adopted to control the functional liquid application apparatus and the substrate stage that holds the substrate. good. In this way, the formation of two shot areas (pattern areas) separated by a natural number k times the dimension in the Y-axis direction of the pattern area with respect to the Y-axis direction parallel to the matrix column direction on the substrate, and the substrate Y Axially By alternately repeating the movement, (m X n) pattern regions can be formed in a matrix arrangement on the substrate. Also in this case, (m X n) pattern regions can be formed in a matrix arrangement on the substrate by a scan operation less than (m X n) times. Further, in the element manufacturing apparatus provided with these two functional liquid application devices, the substrate may be fixed, and the functional liquid application device may be scanned in the scanning direction, or the substrate, the functional liquid application device, May be scanned in opposite directions.

 [0109] It should be noted that all the publications relating to the exposure apparatus and the like cited in the above embodiment, the international publication brochure, the US patent application publication specification, and the disclosure of the US patent specification are incorporated as part of the description of this specification. To do.

 [0110] <Device Manufacturing Method>

 Next, a microdevice manufacturing method using the above-described various exposure apparatuses including the exposure apparatus 10 of the above-described embodiment in a lithographic process will be described. FIG. 13 is a flowchart for explaining a method of manufacturing a semiconductor device as a microdevice.

 First, in step 102 of FIG. 13, a metal film is deposited on one lot of Ueno (plate). In the next step 104, a photoresist is applied on the metal film on the loto (plate). Thereafter, in step 106, the above-described various exposure apparatuses are used to form the pattern image, the one lot of wafers, and each shot area on the (plate). That is, each shot area on the wafer and the (plate) is sequentially exposed with the pattern image.

 [0112] After that, in step 108, the photoresist on the lot (the plate) is developed, and in step 110, the resist pattern is used as a mask on the wafer (plate) in the lot. By performing etching, a circuit pattern corresponding to the pattern image is formed in each shot area on each wafer (plate).

 [0113] After that, a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer.

In this case, in step 106, the plate is exposed with high throughput using the above-described various exposure apparatuses (including the exposure apparatus 10 of the above-described embodiment). As a result, a device such as a semiconductor element is obtained. Productivity can be improved. [0115] Further, instead of the process in step 106 in at least one layer, a pattern may be formed on the substrate using the element manufacturing apparatus described above. In this case, since the pattern is formed on the substrate with high throughput, it is possible to improve the productivity of devices such as semiconductor elements.

 In the various exposure apparatuses described above, a liquid crystal display element as a microdevice can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). FIG. 14 is a flowchart for explaining a method of manufacturing a liquid crystal display element as a micro device by forming a predetermined pattern on a plate using the various exposure apparatuses described above.

 [0117] In the pattern forming process of step 202 in FIG. 14, a so-called photolithographic process, in which a pattern image is formed on a photosensitive substrate (such as a glass substrate coated with a resist) using the various exposure apparatuses described above. Executed. By this optical lithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate is subjected to processing steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate.

 [0118] Next, in the color filter forming process of step 204, a group of three dots corresponding to R (Red), G (Green), and B (B1 ue) are arranged in a matrix or R, A color filter is formed by arranging a set of three stripe filters G and B in the horizontal scanning line direction. Then, after the color filter forming step (step 204), the cell assembling step of step 206 is executed. In the cell assembly process of step 206, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation process and the color filter obtained in the color filter formation process.

 [0119] In the cell assembly process of step 206, for example, liquid crystal is injected between a substrate having a predetermined pattern obtained in the pattern formation process and a color filter obtained in the color filter formation process. Manufactures panels (liquid crystal cells). Thereafter, in the module assembling process of step 208, each part such as an electric circuit and a backlight for performing display operation of the assembled liquid crystal panel (liquid crystal cell) is attached to complete the liquid crystal display element.

[0120] In this case, in the pattern forming process,! / As a result, the productivity of the liquid crystal display element can be improved.

[0121] Further, in the pattern forming step of Step 202, a pattern may be formed on the photosensitive substrate using the element manufacturing apparatus described above. In this case, the pattern is formed on the photosensitive substrate with a high throughput, and as a result, the productivity of the liquid crystal display element can be improved.

 Industrial applicability

[0122] As described above, the exposure method, pattern formation method, and exposure apparatus of the present invention are suitable for forming a pattern on an object such as a plate. The device manufacturing method of the present invention is suitable for manufacturing display devices and other micro devices.

Claims

The scope of the claims

 [1] In an exposure method for forming m × n pattern regions on a substrate in a matrix arrangement of m rows n 歹 IJ (m≥n),

 An exposure method in which (m X n) pattern areas are formed in a matrix arrangement on the substrate by exposure less than (m X n) times.

[2] In the exposure method according to claim 1,

 Forming on the substrate at least two pattern regions separated by a natural number k times the dimension of the pattern region in the predetermined direction with respect to a predetermined direction parallel to the matrix column by each exposure;

 An exposure method of forming m X n pattern regions in a matrix arrangement on the substrate by alternately repeating the step of moving the substrate in the predetermined direction.

[3] In the exposure method according to claim 2,

 When m is an even number, an exposure method of forming m × n pattern regions in a matrix arrangement on the substrate by (m / 2 × n) exposures.

[4] In the exposure method according to claim 2,

 When m is an odd number, the exposure method forms m X n pattern areas on the substrate in a matrix arrangement by Km + l) / 2 X n} exposures.

[5] Claim: V of! ~ 4, V in the exposure method according to one of the above,

 Each exposure is performed by scanning exposure in which the substrate is moved in a scanning direction parallel to the rows of the matrix with respect to illumination light including pattern information.

[6] In the exposure method according to claim 5,

 The exposure is performed by illuminating a mask on which a pattern corresponding to the pattern region is formed with illumination light, and moving the mask and the substrate in synchronization with the scanning direction.

[7] The exposure method according to claim 5,

 The exposure method is an exposure method in which the substrate is moved in the scanning direction in synchronization with a change in light including pattern information generated by a pattern generator.

[8] Claim: V of! ~ 7, V in the exposure method according to any one of The exposure is performed by a projection optical system that projects light including pattern information onto the substrate.

 In the exposure method according to claim 8,

 An exposure method using an equal magnification system or an enlargement system as the projection optical system.

 In the exposure method according to claim 8 or 9,

 The exposure is performed by using two or more projection optical systems.

 The exposure method according to claim 10, wherein

 The exposure method wherein the exposure is performed using the same number of the masks corresponding to the two or more projection optical systems.

 A step of exposing a substrate using the exposure method according to any one of claims 1 to 11; a step of developing the exposed substrate;

 And a step of processing the developed substrate.

 In a pattern forming method of forming (m X n) pattern regions in a matrix arrangement of m rows n 歹 IJ (m≥n) on a substrate by a scanning operation,

 A pattern forming method of forming (m X n) pattern regions in a matrix arrangement on the substrate by a scan operation less than (m X n) times.

 In the pattern formation method according to claim 13,

 Forming on the substrate at least two pattern regions spaced apart by a natural number k times the size of the pattern region in the predetermined direction with respect to a predetermined direction parallel to the matrix column by each scanning operation;

 The pattern forming method according to claim 13 or 14, wherein the step of moving the substrate in the predetermined direction is alternately repeated to form m X n pattern regions on the substrate in a matrix arrangement. Forming a pattern on a substrate using a pattern forming method;

And a step of processing the substrate on which the pattern is formed. An exposure apparatus for forming a substantially rectangular pattern region on a substrate in a matrix arrangement of m rows and n columns (m≥n), A pattern generation device capable of exposing at least two regions apart from each other in a predetermined direction parallel to a column direction of the matrix at a time to form at least a part of the pattern region at different positions on the substrate;

 A substrate driving device for driving the substrate;

 When forming the pattern region of m rows and n columns on the substrate, at least two pattern regions spaced apart by a natural number k times the dimension of the pattern region in the predetermined direction with respect to the predetermined direction on the substrate. And a control system that controls the pattern generation device and the substrate driving device so that the formation of the substrate and the movement of the substrate in the predetermined direction are alternately repeated.

 [17] The exposure apparatus according to claim 16,

 An exposure apparatus that moves the substrate in a scanning direction parallel to the rows of the matrix with respect to illumination light including pattern information generated by the pattern generation device.

 [18] The exposure apparatus according to claim 16 or 17,

 Each of the marks formed on the substrate is detected, and further includes at least 2m mark detection systems arranged apart from each other in a direction parallel to the column direction of the matrix,

 By at least a part of the 2m mark detection system, the inside of each of at least two areas on the substrate to be exposed at the same time in both cases where m is an odd number and an even number. An exposure apparatus in which an interval between the at least 2 m mark detection systems is set so that two marks formed near both ends of the mark can be detected simultaneously.

[19] The exposure apparatus according to claim 18,

 The substrate is a rectangular substrate;

 When the rectangular substrate is rotated 90 degrees for exposure, the mark used when rotated 90 degrees using (2m-2) mark detection systems out of the at least 2 m mark detection systems. Exposure device to detect.

[20] An exposure apparatus that exposes a substrate to form a plurality of rectangular pattern regions on the substrate. About

 A mask stage system on which a plurality of masks each having a pattern corresponding to the pattern region are mounted;

 An illumination system capable of illuminating the plurality of masks with illumination light substantially simultaneously;

 A plurality of projection optical systems provided respectively corresponding to the plurality of masks and projecting the illumination light through the masks onto projection areas on the substrate;

 A substrate stage on which the substrate is mounted;

 An exposure apparatus comprising: a driving system that drives the mask stage system and the substrate stage so that the masks are scanned in a scanning direction in synchronization with the substrate stage.

[21] The exposure apparatus according to claim 20,

 The mask stage system is an exposure apparatus including a plurality of mask stages on which the plurality of masks are respectively mounted.

[22] The exposure apparatus according to claim 20,

 The mask stage system is an exposure apparatus including a single mask stage on which the plurality of masks are simultaneously mounted.

[23] In the exposure apparatus according to claim 20! /! Or any one of the deviations! /,

 The plurality of masks are respectively scanned along the scanning direction by the driving system at positions separated by a predetermined distance with respect to the non-scanning direction orthogonal to the scanning direction via a mask stage system.

 The exposure apparatus, wherein the plurality of projection optical systems are arranged along the non-scanning direction separated by a distance corresponding to a positional relationship of scanning paths of the plurality of mask stages.

[24] The exposure apparatus according to claim 20,

 An exposure apparatus provided with two each of the mask and the projection optical system.

[25] The exposure apparatus according to claim 24,

 The distance in the non-scanning direction between the edges near the projection areas of the illumination light by the two projection optical systems is set to 1/4 or less of the long side of the substrate,

And the distance V between the projection areas and the distance between the side edges in the non-scanning direction is set to be equal to or longer than the short side of the substrate, An exposure apparatus in which the width of each projection area in the non-scanning direction is set to 1/3 or more of the short side of the substrate.

[26] Claims 20 to 25 in the exposure apparatus according to claim 20!

 Each of the projection optical systems is an exposure apparatus that is an equal magnification system or an enlargement system.

[27] The exposure apparatus according to any one of claims 24 to 26,

 Each of the plurality of projection optical systems includes a plurality of projection optical units, and overlaps and synthesizes the partial projection areas irradiated by the plurality of projection optical units to form the projection area.

[28] An exposure apparatus that forms m X n pattern regions on a substrate in a matrix arrangement of m rows n 歹 IJ (m≥n),

 A pattern generating device capable of forming the pattern region by exposing two regions apart from each other in a direction parallel to the column direction of the matrix at a time;

 Each detecting a mark formed on the substrate, and at least 2m mark detection systems arranged apart from each other in a direction parallel to the column direction of the matrix;

 By using at least some of the 2m mark detection systems, it is possible to simultaneously detect each of the two marks formed near both ends of each of the two regions on the substrate that are simultaneously exposed. An exposure apparatus in which an interval between the at least 2 m mark detection systems is set so that

[29] The exposure apparatus according to claim 28,

 The substrate is a rectangular substrate;

 When the rectangular substrate is rotated 90 degrees for exposure, the mark used when rotated 90 degrees using (2m-2) mark detection systems out of the at least 2 m mark detection systems. Exposure device to detect.

[30] In the exposure apparatus according to any one of claims 16 to 29,

 The pattern area is a rectangular pattern area (m x nM solidly formed on the substrate).

[31] The exposure apparatus according to any one of claims 16 to 30,! The exposure apparatus is a substrate for a display device.

[32] In the exposure apparatus according to any one of claims 16 to 31,

 The exposure apparatus, wherein the substrate is a rectangular substrate having a short side length greater than 500 mm.

[33] forming a pattern on the substrate using the exposure apparatus according to any one of claims 16 to 32;

 Developing the substrate on which the pattern is formed;

 And a step of processing the developed substrate.

[34] A display panel in which a display device is formed on a substrate by the device manufacturing method according to any one of claims 12, 15, and 33.