WO2008067228B1 - Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions - Google Patents

Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions

Info

Publication number
WO2008067228B1
WO2008067228B1 PCT/US2007/085371 US2007085371W WO2008067228B1 WO 2008067228 B1 WO2008067228 B1 WO 2008067228B1 US 2007085371 W US2007085371 W US 2007085371W WO 2008067228 B1 WO2008067228 B1 WO 2008067228B1
Authority
WO
WIPO (PCT)
Prior art keywords
spacers
forming
portions
layer
critical dimension
Prior art date
Application number
PCT/US2007/085371
Other languages
French (fr)
Other versions
WO2008067228A1 (en
Inventor
Baosuo Zhou
Original Assignee
Micron Technology Inc
Baosuo Zhou
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc, Baosuo Zhou filed Critical Micron Technology Inc
Priority to JP2009539423A priority Critical patent/JP5532303B2/en
Priority to CN2007800439106A priority patent/CN101542685B/en
Priority to EP07864709.6A priority patent/EP2095402B1/en
Priority to KR1020097011807A priority patent/KR101091298B1/en
Publication of WO2008067228A1 publication Critical patent/WO2008067228A1/en
Publication of WO2008067228B1 publication Critical patent/WO2008067228B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3088—Process specially adapted to improve the resolution of the mask

Abstract

A method of forming features on a target layer. The features have a critical dimension that is triple- or quadruple-reduced compared to the critical dimension of portions of a resist layer used as a mask. An intermediate layer is deposited over a target layer and the resist layer is formed over the intermediate layer. After patterning the resist layer, first spacers are formed on sidewalls of remaining portions of the resist layer, masking portions of the intermediate layer. Second spacers are formed on sidewalls of the portions of the intermediate layer. After removing the portions of the intermediate layer, the second spacers are used as a mask to form the features on the target layer. A partially fabricated integrated circuit device is also disclosed.

Claims

AMENDED CLAIMS received by the International Bureau on 13 June 2008 (13.06.08)
1. A method of forming features on a target layer, comprising: forming an intermediate layer on a target layer; forming openings in a resist layer located above the intermediate layer; forming a first set of spacers on sidewalls of portions of the resist layer; exposing portions of the target layer except for portions masked by the first set of spacers; removing the first set of spacers to expose underlying portions of the intermediate layer; forming a second set of spacers on sidewalls of the exposed portions of the intermediate layer, removing the portions of the intermediate layer, and forming features in exposed portions of the target layer.
2. The method of claim 1 , wherein forming features in exposed portions of the target layer comprises forming the features having a critical dimension smaller than the critical dimension of the openings in the resist layer.
3« The method of claim 1 , wherein forming openings in a resist layer comprises forming the openings having a critical dimension of x and producing portions of the resist layer having a critical dimension of x.
4. The method of claim 3, wherein forming features in exposed portions of the target layer comprises forming features having a critical dimension equal to about x/3.
5. The method of claim 1 , wherein forming openings in a resist layer comprises forming the openings having a critical dimension of Sx/4 and producing portions of the resist layer having a critical dimension of 3x/4.
6. The method of claim I, wherein forming features in exposed portions of the target layer comprises forming features having a critical dimension equal to about x/4.
7. The method of claim 1 , wherein forming a first set of spacers comprises depositing a spacer material at a thickness about equal to a critical dimension of features to be formed on the target layer.
8. The method of claim 1, wherein forming a first set of spacers or forming a second set of spacers comprises forming the first set of spacers or the second set of spacers from silicon oxide or silicon nitride.
9. The method of claim 1, wherein forming a first set of spacers comprises confoimally depositing a spacer material over remaining portions of the resist layer.
10. The method of claim 1, wherein exposing portions of the target layer except for regions masked by the first set of spacers comprises etching remaining portions of the resist layer between the first set of spacers and etching underlying portions of the intermediate layer.
11. The method of claim 1 , wherein removing the first set of spacers to expose underlying portions of the intermediate layer comprises removing the first set of spacers.
12. The method of claim 1, further comprising forming an aπti-reflcctive layer between the resist layer and the intermediate layer.
13. The method of claim 1, wherein forming a first set of spacers comprises forming substantially vertical spacers on the sidewalls of remaining portions of the resist layer,
14. The method of claim 1 , further comprising removing remaining portions of the resist layer before exposing the portions of the target layer.
15. The method of claim 1 , further comprising removing the first set of spacers before exposing portions of the intermediate layer.
16. The method of claim 1, wherein forming a second set of spacers comprises forming the second set of spacers from the same material as the first set of spacers.
17. The method of claim 1 , wherein forming features in exposed portions of the target layer comprises forming the features having a critical dimension about equal to a thickness of the first set of spacers.
18. A partially fabricated integrated circuit device, comprising: a target layer; substantially vertical sections of an intermediate layer located and formed on the target layer; and spacers formed on the target layer, the spacers having a width of either one-third or one- fourth of a minimum width, the spacers separated from neighboring spacers by a distance equal to the width of the spacers, a portion of the spacers separated from neighboring spacers by voids and the substantially vertical sections of the intermediate layer, the remaining spacers separated from neighboring spacers by the substantially vertical sections of the intermediate layer.
PCT/US2007/085371 2006-11-29 2007-11-21 Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions WO2008067228A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009539423A JP5532303B2 (en) 2006-11-29 2007-11-21 Method for reducing critical dimensions of semiconductor devices
CN2007800439106A CN101542685B (en) 2006-11-29 2007-11-21 Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions
EP07864709.6A EP2095402B1 (en) 2006-11-29 2007-11-21 Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions
KR1020097011807A KR101091298B1 (en) 2006-11-29 2007-11-21 Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/606,613 US7807575B2 (en) 2006-11-29 2006-11-29 Methods to reduce the critical dimension of semiconductor devices
US11/606,613 2006-11-29

Publications (2)

Publication Number Publication Date
WO2008067228A1 WO2008067228A1 (en) 2008-06-05
WO2008067228B1 true WO2008067228B1 (en) 2008-07-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/085371 WO2008067228A1 (en) 2006-11-29 2007-11-21 Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions

Country Status (7)

Country Link
US (3) US7807575B2 (en)
EP (1) EP2095402B1 (en)
JP (1) JP5532303B2 (en)
KR (1) KR101091298B1 (en)
CN (1) CN101542685B (en)
TW (1) TWI356446B (en)
WO (1) WO2008067228A1 (en)

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JP5532303B2 (en) 2014-06-25
JP2010511306A (en) 2010-04-08
EP2095402A1 (en) 2009-09-02
US20130009283A1 (en) 2013-01-10
US8338304B2 (en) 2012-12-25
US20110006402A1 (en) 2011-01-13
TW200834660A (en) 2008-08-16
US8836083B2 (en) 2014-09-16
US20080122125A1 (en) 2008-05-29
TWI356446B (en) 2012-01-11
KR101091298B1 (en) 2011-12-07
WO2008067228A1 (en) 2008-06-05
EP2095402B1 (en) 2016-04-06
KR20090090327A (en) 2009-08-25
CN101542685A (en) 2009-09-23
CN101542685B (en) 2011-09-28
US7807575B2 (en) 2010-10-05

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