WO2008097321A3 - Method for growing arrays of aligned nanostructures on surfaces - Google Patents

Method for growing arrays of aligned nanostructures on surfaces Download PDF

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Publication number
WO2008097321A3
WO2008097321A3 PCT/US2007/070428 US2007070428W WO2008097321A3 WO 2008097321 A3 WO2008097321 A3 WO 2008097321A3 US 2007070428 W US2007070428 W US 2007070428W WO 2008097321 A3 WO2008097321 A3 WO 2008097321A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanostructures
growing
aligned nanostructures
array
arrays
Prior art date
Application number
PCT/US2007/070428
Other languages
French (fr)
Other versions
WO2008097321A2 (en
Inventor
Martin Bettge
Stephan Burdin
Scott Maclaren
Ivan Petrov
Ernie Sammann
Original Assignee
Univ Illinois
Martin Bettge
Stephan Burdin
Scott Maclaren
Ivan Petrov
Ernie Sammann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois, Martin Bettge, Stephan Burdin, Scott Maclaren, Ivan Petrov, Ernie Sammann filed Critical Univ Illinois
Publication of WO2008097321A2 publication Critical patent/WO2008097321A2/en
Publication of WO2008097321A3 publication Critical patent/WO2008097321A3/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention provides methods for growing an array of elongated nanostructures projecting from a surface. The nanostructures of the array are aligned substantially perpendicularly to the surface. In one aspect of the invention, the diameter of the nanostructures is between 10 nm and 200 nm. The methods of the invention can produce nanostructure growth at temperatures less than 350 degrees Celsius. Alignment of the nanostructures does not rely on epitaxial growth from a single crystal substrate, allowing a variety of substrates to be used.
PCT/US2007/070428 2006-06-05 2007-06-05 Method for growing arrays of aligned nanostructures on surfaces WO2008097321A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US81103306P 2006-06-05 2006-06-05
US60/811,033 2006-06-05

Publications (2)

Publication Number Publication Date
WO2008097321A2 WO2008097321A2 (en) 2008-08-14
WO2008097321A3 true WO2008097321A3 (en) 2008-10-09

Family

ID=39682255

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/070428 WO2008097321A2 (en) 2006-06-05 2007-06-05 Method for growing arrays of aligned nanostructures on surfaces

Country Status (1)

Country Link
WO (1) WO2008097321A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITVI20130119A1 (en) * 2013-04-26 2014-10-27 Rosalinda Inguanta METHOD FOR THE ENHANCEMENT OF SILICON NANOSTRUCTURES AND ELECTRICAL DEVICE INCLUDING SUCH NANOSTRUCTURES

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040011291A1 (en) * 2000-10-27 2004-01-22 Marc Delaunay Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained
US20050011431A1 (en) * 2003-04-04 2005-01-20 Btg International Limited Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
US6882051B2 (en) * 2001-03-30 2005-04-19 The Regents Of The University Of California Nanowires, nanostructures and devices fabricated therefrom
US20050275331A1 (en) * 2001-06-14 2005-12-15 Hyperion Catalysis International, Inc. Field emission devices using modified carbon nanotubes
US20060057388A1 (en) * 2004-09-10 2006-03-16 Sungho Jin Aligned and open-ended nanotube structure and method for making the same
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040011291A1 (en) * 2000-10-27 2004-01-22 Marc Delaunay Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes and nanotubes thus obtained
US6882051B2 (en) * 2001-03-30 2005-04-19 The Regents Of The University Of California Nanowires, nanostructures and devices fabricated therefrom
US20050275331A1 (en) * 2001-06-14 2005-12-15 Hyperion Catalysis International, Inc. Field emission devices using modified carbon nanotubes
US20050011431A1 (en) * 2003-04-04 2005-01-20 Btg International Limited Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
US20060057388A1 (en) * 2004-09-10 2006-03-16 Sungho Jin Aligned and open-ended nanotube structure and method for making the same

Also Published As

Publication number Publication date
WO2008097321A2 (en) 2008-08-14

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