WO2008115372A1 - Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine - Google Patents

Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine Download PDF

Info

Publication number
WO2008115372A1
WO2008115372A1 PCT/US2008/003224 US2008003224W WO2008115372A1 WO 2008115372 A1 WO2008115372 A1 WO 2008115372A1 US 2008003224 W US2008003224 W US 2008003224W WO 2008115372 A1 WO2008115372 A1 WO 2008115372A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
optical assembly
insertion member
immersion liquid
space
Prior art date
Application number
PCT/US2008/003224
Other languages
French (fr)
Other versions
WO2008115372A8 (en
Inventor
Alex Ka Tim Poon
Leonard Wai Fung Kho
Gaurav Keswani
Derek Coon
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to KR1020187007817A priority Critical patent/KR20180031083A/en
Priority to KR1020157036015A priority patent/KR20160003326A/en
Priority to JP2009553605A priority patent/JP5282255B2/en
Priority to KR1020147027490A priority patent/KR101580467B1/en
Priority to KR1020097021477A priority patent/KR101515649B1/en
Publication of WO2008115372A1 publication Critical patent/WO2008115372A1/en
Publication of WO2008115372A8 publication Critical patent/WO2008115372A8/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

Definitions

  • a typical lithography system includes an optical assembly, a reticle stage for holding a reticle defining a pattern, a wafer stage assembly that positions a semiconductor wafer, and a measurement system that precisely monitors the position of the reticle and the wafer.
  • an image defined by the reticle is projected by the optical assembly onto the wafer.
  • the projected image is typically the size of one or more die on the wafer.
  • the wafer stage assembly moves the wafer and then another exposure takes place. This process is repeated until all the die on the wafer are exposed. The wafer is then removed and a new wafer is exchanged in its place.
  • Immersion lithography systems utilize a layer of immersion fluid that completely fills a space between the optical assembly and the wafer during the exposure of the wafer.
  • the optic properties of the immersion fluid, along with the optical assembly, allow the projection of smaller feature sizes than is currently possible using standard optical lithography.
  • immersion lithography is currently being considered for next generation semiconductor technologies including those beyond 45 nanometers. Immersion lithography therefore represents a significant technological breakthrough that enables the continued use of optical lithography.
  • a wafer After a wafer is exposed, it is removed and exchanged with a new wafer.
  • the immersion fluid would be removed from the space and then replenished after the wafer is exchanged. More specifically, when a wafer is to be exchanged, the fluid supply to the space is turned off, the fluid is removed from the space (i.e., by vacuum), the old wafer is removed, a new wafer is aligned and placed under the optical assembly, and then the space is re-filled with fresh immersion fluid. Once all of the above steps are complete, exposure of the new wafer can begin.
  • a tandem (or twin) stage immersion lithography system a pair of wafer stages are provided, with the stages being alternately positioned under the optical assembly while wafer exchange and/or alignment is performed on the wafer stage not disposed under the optical assembly.
  • the two stages are swapped and the process is repeated. Examples of such exposure apparatus are disclosed in U.S. Patent No. 6,341,007 and in U.S. Patent No. 6,262,796, the disclosures of which are incorporated herein by reference in their entireties.
  • Wafer exchange with immersion lithography as described above continues to be problematic for a number of reasons.
  • the repeated filling and draining of the space may cause bubbles to form within the immersion fluid. Bubbles may interfere with the projection of the image on the reticle onto the wafer, thereby reducing yields.
  • the overall process also involves many steps and is time consuming, which reduces the overall throughput of the machine.
  • An apparatus and method for keeping immersion fluid in the space adjacent to the projection optical system when the wafer stage and/or the wafer table moves away from the projection optical system, for example during wafer exchange and/or during long fast moves, are therefore desirable.
  • an apparatus and method in which one or more object is positioned opposite to the projection optical system to keep immersion fluid in a space between the projection optical system and the one or more objects, when moving the wafer stage and/or wafer table away from the projection optical system are desirable. As a result, machine throughput can be increased.
  • the apparatus includes an optical assembly that projects an image onto a substrate and a stage assembly including a substrate table that supports the substrate adjacent to the optical assembly.
  • An environmental system is provided to supply an immersion fluid to and remove the immersion fluid from the space between the optical assembly and the substrate on the stage assembly.
  • a movable insertion member removably insertable into the space between the optical assembly and the substrate, the substrate table, or both, is provided to divide the immersion fluid into a first portion and a second portion. The first portion is disposed between the optical assembly and the insertion member, and the second portion is disposed between the insertion member and the substrate, the substrate table, or both.
  • the insertion member keeps the optical assembly in contact with the first portion of the immersion fluid when moving the substrate and/or the substrate table away from being disposed adjacent to the optical assembly.
  • An exchange system removes the substrate from the substrate table and replaces it with a second substrate. Because of the insertion member, the space does not have to be fully refilled with immersion fluid when the second substrate is positioned adjacent to the optical assembly.
  • FIG. 1 is an illustration of an immersion lithography machine
  • FIGs. 2 A and 2B are a cross section and a plan view of an immersion lithography machine according to one embodiment
  • FIGs. 3 A to 3D illustrate further details of the movable insertion member of the immersion lithography machine according the embodiment of Figures 2 A and 2B;
  • Figs. 4A and 4B are plan views of two different twin wafer stages according to other embodiments.
  • FIGs. 5 A and 5B illustrate a further embodiment of the movable insertion member
  • Fig. 6A is a flow chart that outlines a process for manufacturing a substrate.
  • Fig. 6B is a flow chart that outlines substrate processing in more detail.
  • Fig. 1 is a schematic illustration of a lithography machine 10.
  • the lithography machine 10 includes a frame 12, an illumination system 14 (irradiation apparatus), an optical assembly 16, a reticle stage assembly 18, a substrate stage assembly 20, a measurement system 22, a control system 24, and a fluid environmental system 26.
  • the design of the components of the lithography machine 10 can be varied to suit the design requirements of the lithography machine 10.
  • the lithography machine 10 is used to transfer a pattern (not shown) of an integrated circuit from a reticle 28 onto a semiconductor wafer 30 (illustrated in phantom).
  • the lithography machine 10 mounts to a mounting base 32, e.g., the ground, a base, or floor or some other supporting structure.
  • the lithography machine 10 can be used as a scanning type photolithography system that exposes the pattern from the reticle 28 onto the wafer 30 with the reticle 28 and the wafer 30 moving synchronously.
  • a scanning type lithographic machine the reticle 28 is moved perpendicularly to an optical axis of the optical assembly 16 by the reticle stage assembly 18, and the wafer 30 is moved perpendicularly to the optical axis of the optical assembly 16 by the wafer stage assembly 20. Exposure occurs while the reticle 28 and the wafer 30 are moving synchronously.
  • the lithography machine 10 can be a step-and-repeat type photolithography system that performs exposure while the reticle 28 and the wafer 30 are stationary.
  • the wafer 30 is in a constant position relative to the reticle 28 and the optical assembly 16 during the exposure of an individual field.
  • the wafer 30 is consecutively moved with the wafer stage assembly 20 perpendicularly to the optical axis of the optical assembly 16 so that the next field of the wafer 30 is brought into position relative to the optical assembly 16 and the reticle 28 for exposure.
  • the image on the reticle 28 is sequentially exposed onto the fields of the wafer 30.
  • the use of the lithography machine 10 provided herein is not necessarily limited to a photolithography for semiconductor manufacturing.
  • the lithography machine 10 for example, can be used as an LCD photolithography system that exposes a liquid crystal display substrate pattern onto a rectangular glass plate or a photolithography system for manufacturing a thin film magnetic head.
  • the term "substrate” is generically used herein to refer to any device that may be patterned using lithography, such as but not limited to wafers or LCD substrates.
  • the apparatus frame 12 supports the components of the lithography machine 10.
  • the apparatus frame 12 illustrated in Figure 1 supports the reticle stage assembly 18, the wafer stage assembly 20, the optical assembly 16 and the illumination system 14 above the mounting base 32.
  • the illumination system 14 includes an illumination source 34 and an illumination optical assembly 36.
  • the illumination source 34 emits a beam (irradiation) of light energy.
  • the illumination optical assembly 36 guides the beam of light energy from the illumination source 34 to the optical assembly 16.
  • the beam illuminates selectively different portions of the reticle 28 and exposes the wafer 30.
  • the illumination source 34 is illustrated as being supported above the reticle stage assembly 18. Typically, however, the illumination source 34 is secured to one of the sides of the apparatus frame 12 and the energy beam from the illumination source 34 is directed to above the reticle stage assembly 18 with the illumination optical assembly 36.
  • the illumination source 34 can be, for example, a g-line source (436 ran), an i-line source (365 nm), a KrF excimer laser (248 ran), an ArF excimer laser (193 nm) or a F 2 laser (157 nm).
  • the illumination source 34 can generate an x-ray.
  • the optical assembly 16 projects and/or focuses the light passing through the reticle 28 to the wafer 30. Depending upon the design of the lithography machine 10, the optical assembly 16 can magnify or reduce the image illuminated on the reticle 28.
  • the optical assembly 16 need not be limited to a reduction system. It also could be a Ix or greater magnification system.
  • VUV vacuum ultraviolet radiation
  • a catadioptric type optical system can be considered.
  • Examples of a catadioptric type of optical system are disclosed in U.S. Patent No 5,668,672, as well as U.S. Patent No. 5,835,275.
  • the reflecting optical system can be a catadioptric optical system incorporating a beam splitter and concave mirror.
  • U.S. Patent No. 5,689,377 as well as European Patent Application Publication No.
  • EP 816892 A2 also use a reflecting-refracting type of optical system incorporating a concave mirror, etc., but without a beam splitter, and also can be employed with this embodiment.
  • the disclosures of the above-mentioned U.S. patents, as well as the European patent application publication are incorporated herein by reference in their entireties.
  • the reticle stage assembly 18 holds and positions the reticle 28 relative to the optical assembly 16 and the wafer 30.
  • the reticle stage assembly 18 includes a reticle stage 38 that retains the reticle 28 and a reticle stage mover assembly 40 that moves and positions the reticle stage 38 and reticle 28.
  • Each stage mover assembly 40, 44 (44 being for the substrate) can move the respective stage 38, 42 with three degrees of freedom, less than three degrees of freedom, or more than three degrees of freedom.
  • each stage mover assembly 40, 44 can move the respective stage 38, 42 with one, two, three, four, five or six degrees of freedom.
  • the reticle stage mover assembly 40 and the substrate stage mover assembly 44 can each include one or more movers, such as rotary motors, voice coil motors, linear motors utilizing a Lorentz force to generate drive force, electromagnetic movers, planar motors, or other force movers.
  • the linear motors can be either an air levitation type employing air bearings or a magnetic levitation type using Lorentz force or reactance force.
  • the stage could move along a guide, or it could be a guideless type stage that uses no guide.
  • one of the stages could be driven by a planar motor, which drives the stage by an electromagnetic force generated by a magnet unit having two- dimensionally arranged magnets and an armature coil unit having two-dimensionally arranged coils in facing positions.
  • a magnet unit having two- dimensionally arranged magnets
  • an armature coil unit having two-dimensionally arranged coils in facing positions.
  • reaction forces generated by the wafer (substrate) stage motion can be mechanically transferred to the floor (ground) by use of a frame member as described in U.S. Patent No. 5,528,100. Additionally, reaction forces generated by the reticle (mask) stage motion can be mechanically transferred to the floor (ground) by use of a frame member as described in U.S. Patent No. 5,874,820.
  • the disclosures of U.S. Patent Numbers 5,528,100 and 5,874,820 are incorporated herein by reference in their entireties.
  • the measurement system 22 monitors movement of the reticle 28 and the wafer 30 relative to the optical assembly 16 or some other reference. With this information, the control system 24 can control the reticle stage assembly 18 to precisely position the reticle 28 and the substrate stage assembly 20 to precisely position the wafer 30.
  • the design of the measurement system 22 can vary. For example, the measurement system 22 can utilize multiple laser interferometers, encoders, mirrors, and/or other measuring devices.
  • the control system 24 receives information from the measurement system 22 and controls the stage assemblies 18, 20 to precisely position the reticle 28 and the wafer 30. Additionally, the control system 24 can control the operation of the components of the environmental system 26.
  • the control system 24 can include one or more processors and circuits.
  • the environmental system 26 controls the environment in a space (not shown) between the optical assembly 16 and the wafer 30.
  • the space includes an imaging field.
  • the imaging field includes the area adjacent to the region of the wafer 30 that is being exposed and the area in which the beam of light energy travels between the optical assembly 16 and the wafer 30. With this design, the environmental system 26 can control the environment in the imaging field.
  • the desired environment created and/or controlled in the space by the environmental system 26 can vary accordingly to the wafer 30 and the design of the rest of the components of the lithography machine 10, including the illumination system 14.
  • the desired controlled environment can be a liquid such as water.
  • the desired controlled environment can be another type of fluid such as a gas.
  • the space may range from 0.1 mm to 10mm in height between top surface of the wafer 30 and the last optical element of the optical assembly 16.
  • the environmental system 26 fills the imaging field and the rest of the space with an immersion fluid.
  • the design of the environmental system 26 and the components of the environmental system 26 can be varied, hi different embodiments, the environmental system 26 delivers and/or injects immersion fluid into the space using spray nozzles, electro-kinetic sponges, porous materials, etc. and removes the fluid from the space using vacuum pumps, sponges, and the like.
  • the environmental system 26 confines the immersion fluid in the space below the optical assembly 16.
  • the environmental system 26 forms part of the boundary of the space between the optical assembly 16 and one or more objects, for example the wafer 30, the wafer stage assembly 20, or both.
  • the immersion fluid confined by the environmental system 26 covers a localized area on a surface of the wafer 30, the wafer stage assembly 20, or both.
  • the design of the environmental system 26 can vary. For example, it can inject the immersion fluid at one or more locations at or near the space. Further, the immersion fluid system can assist in removing and/or scavenging the immersion fluid at one or more locations at or near the wafer 30, the space and/or the edge of the optical assembly 16.
  • U.S. 2007/0046910 Al U.S. 2006/0152697 Al
  • U.S. 2006/0023182 Al and U.S. 2006/0023184 Al the disclosures of which are incorporated herein by reference in their entireties.
  • FIGs. 2A and 2B a cross section and a plan (overhead) view of an immersion lithography machine illustrating one embodiment are shown.
  • the lithography machine 200 includes an optical assembly 16 and a stage assembly 202 that includes a wafer table 204 and a wafer stage 206.
  • the wafer table 204 is configured to support a wafer 208 (or any other type of substrate) under the optical assembly 16.
  • An environmental system 26, surrounding the optical assembly 16, is used to supply and remove immersion fluid 212 from the space between the wafer 208 and the lower most optical element of the optical assembly 16.
  • a substrate exchange system 216 including a wafer loader 218 (i.e., a robot) and an alignment tool 220 (for example, a microscope and CCD camera), is configured to remove the wafer 208 on the wafer table 204 and replace it with a second wafer. This is typically accomplished using the wafer loader 218 to remove the wafer 208 from the wafer table 204. Subsequently, the second wafer (not shown) is placed onto the wafer loader 218, aligned using the alignment tool 220, and then positioned under the optical assembly 16 on the wafer table 204.
  • a wafer loader 218 i.e., a robot
  • an alignment tool 220 for example, a microscope and CCD camera
  • a set of motors 222 are used to move the wafer assembly 202 including the wafer table 204 and wafer stage 206 in up to six degrees of freedom (X, Y, Z, 0 ⁇ ,, ⁇ y , ⁇ z ) during operation.
  • the motors 222 can be any type of motors, such as linear motors, rotary motors, voice coil motors, etc.
  • the immersion lithography machine 200 also includes an insertion member positioning system 224 that is configured to maintain some of the immersion fluid 212 in a space below the optical assembly 16 while the wafer table 204 is away from under the optical assembly 16 (e.g., during wafer exchange, alignment and long fast moves of the substrate away from the optical system).
  • the insertion member positioning system 224 includes a movable insertion member 226, a motor 228, and a control system 230.
  • the movable insertion member 226 is movable into the space between the wafer 208, the wafer table 204, or both, and the lower most optical element of the optical assembly 16, so as to be positioned adjacent to and between the optical assembly 16 and a wafer 208 on the wafer table 204.
  • the movable insertion member 226 is movable into the space between the wafer 208, the wafer table 204, or both, and the lower end portion of the environmental system 26, so as to keep the immersion fluid 212 in the space between the movable insertion member 226 and the optical assembly 16. hi this position, as will be discussed below, the movable insertion member 226 causes a portion of the immersion liquid 212 to be trapped between the optical assembly 16 and the insertion member 226.
  • the movable insertion member 226 also is removable from (i.e., out of) the space between the wafer 208 and the lower most optical element of the optical assembly 16.
  • the movable insertion member 226 is not released from the motor 228 by the control system 230. That is, the movable insertion member 226 remains attached to the motor 228 (i.e., held by the control system 230) in the position adjacent to and between the optical assembly 16 and a wafer 208 on the wafer table 204.
  • the movable insertion member 226 is held adjacent to the projection system 16 without contacting the projection system 16 after the movable insertion member 226 is moved into the space between the projection system 16 and the substrate wafer 208.
  • the movable insertion member 226 is movable in up to six degrees of freedom directions using one or more motors 228, which are controlled by the control system 230.
  • the motor 228 can be any type of motor.
  • the movable insertion member 226 is positioned under (adjacent to) the optical assembly 16 before the wafer table 204 (the wafer stage 206) and the held wafer is moved away from being under the optical assembly 16.
  • Figs. 3 A to 3D illustrate an example of how the movable insertion member 226 keeps the optical assembly 16 in contact with at least a portion of the immersion liquid 212.
  • immersion liquid 212 is continuously supplied to the immersion fluid element (liquid confinement member) 310 of the environmental system 26 around the last optical element of the optical assembly 16, and is continuously recovered through the recovery element 320, which may be a porous media vacuum, etc., of the environmental system 26.
  • the recovery element 320 (porous media) is provided at the lower surface of the immersion fluid element 310.
  • the wafer 208 is opposite to the optical assembly 16 and the immersion fluid element 310 (and the recovery element 320).
  • the wafer table 204 or both the wafer 208 and the wafer table 204 may be positioned under the optical assembly 16 and the immersion fluid element 310 (and the recovery element 320). At this time, the movable insertion member 226 is disposed outside of the space between the optical assembly 16 and the wafer 208. Before a wafer exchange, during which the wafer table 204 moves away from the optical assembly 16, the immersion liquid 212 should be removed from the wafer stage 206. Accordingly, the control system 230 directs the motor 228 to move the movable insertion member 226 into the space between the wafer 208 and the lower most optical element of the optical assembly 16.
  • the movable insertion member 226 is moved into the space between the wafer 208 and the lower end of the immersion fluid element 310. As shown in Fig. 3B, the movable insertion member 226 divides the immersion liquid 212 in the space into a first portion between the optical assembly 16 and the insertion member 226, and a second portion between the insertion member 226 and the wafer 208. Thus, the movable insertion member 226 keeps the optical assembly 16 in contact with the first portion of the immersion liquid 212 when the wafer 208 is moved away (via movement of the wafer stage 206) from being disposed adjacent to the optical assembly 16. In Fig. 3B, the first portion includes the space between the wafer 208 and the immersion fluid element 310.
  • the immersion liquid 212 under the movable insertion member 226 can be removed through the porous media 320 of the immersion fluid element 310.
  • the liquid 212 may be removed from a recovery outlet (not shown) provided on the wafer table 204 and/or a recovery outlet (not shown) provided on the back surface and/or the side surface of the moveable insertion member 226.
  • the wafer stage 206 can move long distances at maximum speed without having liquid escaping from the immersion fluid element 310.
  • the wafer table 204 is repositioned under the optical assembly 16.
  • the wafer table 204 is positioned under the movable insertion member 226.
  • the control system 230 then directs the motor 228 to retract the movable insertion member 226 from the space, preventing the escape of the immersion liquid 212 from adjacent the optical assembly 16, and to move the movable insertion member 226 to the position outside the space as shown in Fig. 3 A.
  • the space between the new wafer and the optical assembly 16 is filled with the immersion liquid 212. Exposure is then performed. In this manner, the insertion member positioning system 224 maintains the immersion liquid 212 adjacent to the lower most element of the optical assembly 16 during wafer exchange and during long fast moves of the substrate away from the optical assembly.
  • control system 230 may be a separate control system or it can be integrated into the control system used to control the exposure apparatus.
  • Vertical position and/or tilt of at least one of the wafer table 204 and the movable insertion member 226 may be adjusted as needed before, during or after the wafer table 204 is moved out from under the optical assembly 16.
  • the operation that is performed when the wafer table 204 is away from the optical assembly 16 is not limited to a wafer exchange operation. For example, an alignment operation, a measurement operation or other operations that involve long fast moves of the substrate or the wafer table may be executed while maintaining the immersion liquid 212 in the space between the movable insertion member 226 and the optical assembly 16.
  • FIGS 4 A and 4B are plan views of two different twin stage immersion lithography systems according to other embodiments.
  • the disclosures of U.S. Patent No. 6,262,796 and U.S. Patent No. 6,341,007 are incorporated herein by reference in their entireties. In both embodiments, a pair of wafer stages WSl and WS2 are shown.
  • Motors 502 are used to move or position the two stages WSl and WS2 in the horizontal direction (in the drawings), whereas motors 504 are used to move or position the stages WSl and WS2 in the vertical direction (in the drawings).
  • the motors 502 and 504 are used to alternatively position one stage under the optical assembly 16 while a wafer exchange and alignment is performed on the other stage. When the exposure of the wafer under the optical assembly 16 is complete, then the two stages are swapped and the above process is repeated.
  • the various embodiments for maintaining immersion liquid in the space under the optical assembly 16 as described and illustrated above with regard to Figures 2A through 3B can be used with either twin stage arrangement.
  • a single movable insertion member 226, motor 228, and control system 230 could be used adjacent to the optical assembly 16.
  • the movable insertion member 226 is movable separately from the stages WSl and WS2. When stages WSl and WS2 are to be swapped, the movable insertion member 226 is moved into the space between the optical assembly 16 and the wafer 208 to maintain the immersion liquid 212 below the optical assembly 16.
  • the movable insertion member 226 is positioned under the optical assembly 16 and the space between the optical assembly 16 and the movable insertion member 226 is filled with the immersion liquid 212.
  • the movable insertion member can be made of a number of different materials, such as ceramic, metal and plastic. Because the movable insertion member is relatively thin and should not be deformed under a load or during an operation, it is preferable that the materials have a high stiffness that is resistant to deformation.
  • the moveable insertion member may have a thickness of 50 microns to 5mm. Preferably, the thickness ranges from 50 microns to 200 microns. These materials also may be coated with Teflon according to other embodiments.
  • the size of the movable insertion member also should be sufficient to cover the area occupied by the immersion liquid.
  • the surface of the last optical element of the optical assembly 16 is constantly under immersion fluid environment, preventing the formation of a fluid mark (e.g. "a water mark").
  • the insertion member is moved, for example, by a robot arm or other actuator.
  • the top surface (facing the optical assembly 16) and the bottom surface (facing the wafer 208) of the movable insertion member 226 neither repel nor attract liquid.
  • the top surface of the movable insertion member 226 attracts liquid (e.g., is hydrophilic) and the bottom surface of the movable insertion member 226 repels liquid (e.g., is hydrophobic).
  • liquid e.g., is hydrophilic
  • the bottom surface of the movable insertion member 226 repels liquid (e.g., is hydrophobic).
  • the bottom surface of the movable insertion member 226 is hydrophobic, and a hydrophobic bead 501 (not shown to scale) is provided around the perimeter of the top surface of the movable insertion member 226.
  • the top surface of the movable insertion member 226 inside the hydrophobic bead 501 is hydrophilic.
  • step 601 the substrate's function and performance characteristics are designed.
  • step 602 a mask (reticle) having a pattern is designed according to the previous designing step, and in a parallel step 603 a wafer is made from a silicon material.
  • the mask pattern designed in step 602 is exposed onto the wafer from step 603 in step 604 by a photolithography system described hereinabove.
  • step 605 the semiconductor substrate is assembled (including the dicing process, bonding process and packaging process). Finally, the substrate is then inspected in step 606.
  • FIG. 6B illustrates a detailed flowchart example of the above-mentioned step 504 in the case of fabricating semiconductor substrates.
  • step 611 oxidation step
  • step 612 CVD step
  • step 613 electrode formation step
  • step 614 ion implantation step
  • steps 611-614 form the preprocessing steps for wafers during wafer processing, and selection is made at each step according to processing requirements.
  • step 615 photoresist formation step
  • step 616 exposure step
  • step 617 developing step
  • step 618 etching step
  • steps other than residual photoresist exposed material surface
  • step 619 photoresist removal step

Abstract

Apparatus and methods keep immersion liquid in a space adjacent to an optical assembly. An optical assembly projects an image onto a substrate supported adjacent to the optical assembly by a substrate table. An insertion member insertable into the space between the optical assembly and the substrate, the substrate table, or both, divides the immersion liquid into a first portion and a second portion, the first portion disposed between the optical assembly and the insertion member, and the second portion disposed between the insertion member and the substrate, the substrate table, or both. The insertion member keeps the optical assembly in contact with the first portion when the substrate is moved away from being disposed adjacent to the optical assembly.

Description

APPARATUS AND METHODS FOR KEEPING IMMERSION FLUID
ADJACENT TO AN OPTICAL ASSEMBLY DURING WAFER EXCHANGE
IN AN IMMERSION LITHOGRAPHY MACHINE
[0001] This application claims the benefit of U.S. Provisional Application No. 60/918,057 filed March 15, 2007 and U.S. Non-provisional Application No. 11/976,898 filed October 29, 2007. The disclosure of the prior applications is incorporated herein by reference in its entirety.
BACKGROUND
[0002] Lithography systems are commonly used to transfer images from a reticle onto a semiconductor wafer during semiconductor processing. A typical lithography system includes an optical assembly, a reticle stage for holding a reticle defining a pattern, a wafer stage assembly that positions a semiconductor wafer, and a measurement system that precisely monitors the position of the reticle and the wafer. During operation, an image defined by the reticle is projected by the optical assembly onto the wafer. The projected image is typically the size of one or more die on the wafer. After an exposure, the wafer stage assembly moves the wafer and then another exposure takes place. This process is repeated until all the die on the wafer are exposed. The wafer is then removed and a new wafer is exchanged in its place.
[0003] Immersion lithography systems utilize a layer of immersion fluid that completely fills a space between the optical assembly and the wafer during the exposure of the wafer. The optic properties of the immersion fluid, along with the optical assembly, allow the projection of smaller feature sizes than is currently possible using standard optical lithography. For example, immersion lithography is currently being considered for next generation semiconductor technologies including those beyond 45 nanometers. Immersion lithography therefore represents a significant technological breakthrough that enables the continued use of optical lithography.
[0004] After a wafer is exposed, it is removed and exchanged with a new wafer. As contemplated in some immersion systems, the immersion fluid would be removed from the space and then replenished after the wafer is exchanged. More specifically, when a wafer is to be exchanged, the fluid supply to the space is turned off, the fluid is removed from the space (i.e., by vacuum), the old wafer is removed, a new wafer is aligned and placed under the optical assembly, and then the space is re-filled with fresh immersion fluid. Once all of the above steps are complete, exposure of the new wafer can begin. In a tandem (or twin) stage immersion lithography system, a pair of wafer stages are provided, with the stages being alternately positioned under the optical assembly while wafer exchange and/or alignment is performed on the wafer stage not disposed under the optical assembly. When the exposure of the wafer under the optical assembly is complete, the two stages are swapped and the process is repeated. Examples of such exposure apparatus are disclosed in U.S. Patent No. 6,341,007 and in U.S. Patent No. 6,262,796, the disclosures of which are incorporated herein by reference in their entireties.
[0005] Wafer exchange with immersion lithography as described above continues to be problematic for a number of reasons. The repeated filling and draining of the space may cause bubbles to form within the immersion fluid. Bubbles may interfere with the projection of the image on the reticle onto the wafer, thereby reducing yields. The overall process also involves many steps and is time consuming, which reduces the overall throughput of the machine.
[0006] For examples of systems which reduce the overall throughput of the machine, see US 2006/0023186 Al and US 2005/0036121 Al, the disclosures of which are incorporated herein by reference in their entireties.
SUMMARY
[0007] An apparatus and method for keeping immersion fluid in the space adjacent to the projection optical system when the wafer stage and/or the wafer table moves away from the projection optical system, for example during wafer exchange and/or during long fast moves, are therefore desirable. Furthermore, an apparatus and method in which one or more object is positioned opposite to the projection optical system to keep immersion fluid in a space between the projection optical system and the one or more objects, when moving the wafer stage and/or wafer table away from the projection optical system, are desirable. As a result, machine throughput can be increased.
[0008] According to one aspect, the apparatus includes an optical assembly that projects an image onto a substrate and a stage assembly including a substrate table that supports the substrate adjacent to the optical assembly. An environmental system is provided to supply an immersion fluid to and remove the immersion fluid from the space between the optical assembly and the substrate on the stage assembly. A movable insertion member removably insertable into the space between the optical assembly and the substrate, the substrate table, or both, is provided to divide the immersion fluid into a first portion and a second portion. The first portion is disposed between the optical assembly and the insertion member, and the second portion is disposed between the insertion member and the substrate, the substrate table, or both. The insertion member keeps the optical assembly in contact with the first portion of the immersion fluid when moving the substrate and/or the substrate table away from being disposed adjacent to the optical assembly. An exchange system removes the substrate from the substrate table and replaces it with a second substrate. Because of the insertion member, the space does not have to be fully refilled with immersion fluid when the second substrate is positioned adjacent to the optical assembly.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Fig. 1 is an illustration of an immersion lithography machine;
[0010] Figs. 2 A and 2B are a cross section and a plan view of an immersion lithography machine according to one embodiment;
[0011] Figs. 3 A to 3D illustrate further details of the movable insertion member of the immersion lithography machine according the embodiment of Figures 2 A and 2B;
[0012] Figs. 4A and 4B are plan views of two different twin wafer stages according to other embodiments;
[0013] Figs. 5 A and 5B illustrate a further embodiment of the movable insertion member;
[0014] Fig. 6A is a flow chart that outlines a process for manufacturing a substrate; and
[0015] Fig. 6B is a flow chart that outlines substrate processing in more detail.
DETAILED DESCRIPTION OF EMBODIMENTS
[0016] Fig. 1 is a schematic illustration of a lithography machine 10. The lithography machine 10 includes a frame 12, an illumination system 14 (irradiation apparatus), an optical assembly 16, a reticle stage assembly 18, a substrate stage assembly 20, a measurement system 22, a control system 24, and a fluid environmental system 26. The design of the components of the lithography machine 10 can be varied to suit the design requirements of the lithography machine 10.
[0017] In one embodiment, the lithography machine 10 is used to transfer a pattern (not shown) of an integrated circuit from a reticle 28 onto a semiconductor wafer 30 (illustrated in phantom). The lithography machine 10 mounts to a mounting base 32, e.g., the ground, a base, or floor or some other supporting structure.
[0018] In various embodiments, the lithography machine 10 can be used as a scanning type photolithography system that exposes the pattern from the reticle 28 onto the wafer 30 with the reticle 28 and the wafer 30 moving synchronously. In a scanning type lithographic machine, the reticle 28 is moved perpendicularly to an optical axis of the optical assembly 16 by the reticle stage assembly 18, and the wafer 30 is moved perpendicularly to the optical axis of the optical assembly 16 by the wafer stage assembly 20. Exposure occurs while the reticle 28 and the wafer 30 are moving synchronously.
[0019] Alternatively, the lithography machine 10 can be a step-and-repeat type photolithography system that performs exposure while the reticle 28 and the wafer 30 are stationary. In the step and repeat process, the wafer 30 is in a constant position relative to the reticle 28 and the optical assembly 16 during the exposure of an individual field. Subsequently, between consecutive exposure steps, the wafer 30 is consecutively moved with the wafer stage assembly 20 perpendicularly to the optical axis of the optical assembly 16 so that the next field of the wafer 30 is brought into position relative to the optical assembly 16 and the reticle 28 for exposure. Following this process, the image on the reticle 28 is sequentially exposed onto the fields of the wafer 30.
[0020] However, the use of the lithography machine 10 provided herein is not necessarily limited to a photolithography for semiconductor manufacturing. The lithography machine 10, for example, can be used as an LCD photolithography system that exposes a liquid crystal display substrate pattern onto a rectangular glass plate or a photolithography system for manufacturing a thin film magnetic head. Accordingly, the term "substrate" is generically used herein to refer to any device that may be patterned using lithography, such as but not limited to wafers or LCD substrates.
[0021] The apparatus frame 12 supports the components of the lithography machine 10. The apparatus frame 12 illustrated in Figure 1 supports the reticle stage assembly 18, the wafer stage assembly 20, the optical assembly 16 and the illumination system 14 above the mounting base 32.
[0022] The illumination system 14 includes an illumination source 34 and an illumination optical assembly 36. The illumination source 34 emits a beam (irradiation) of light energy. The illumination optical assembly 36 guides the beam of light energy from the illumination source 34 to the optical assembly 16. The beam illuminates selectively different portions of the reticle 28 and exposes the wafer 30. In Figure 1, the illumination source 34 is illustrated as being supported above the reticle stage assembly 18. Typically, however, the illumination source 34 is secured to one of the sides of the apparatus frame 12 and the energy beam from the illumination source 34 is directed to above the reticle stage assembly 18 with the illumination optical assembly 36.
[0023] The illumination source 34 can be, for example, a g-line source (436 ran), an i-line source (365 nm), a KrF excimer laser (248 ran), an ArF excimer laser (193 nm) or a F2 laser (157 nm). Alternatively, the illumination source 34 can generate an x-ray.
[0024] The optical assembly 16 projects and/or focuses the light passing through the reticle 28 to the wafer 30. Depending upon the design of the lithography machine 10, the optical assembly 16 can magnify or reduce the image illuminated on the reticle 28. The optical assembly 16 need not be limited to a reduction system. It also could be a Ix or greater magnification system.
[0025] Also, with an exposure substrate that employs vacuum ultraviolet radiation (VUV) of wavelength 200 nm or lower, use of a catadioptric type optical system can be considered. Examples of a catadioptric type of optical system are disclosed in U.S. Patent No 5,668,672, as well as U.S. Patent No. 5,835,275. In these cases, the reflecting optical system can be a catadioptric optical system incorporating a beam splitter and concave mirror. U.S. Patent No. 5,689,377 as well as European Patent Application Publication No. EP 816892 A2 also use a reflecting-refracting type of optical system incorporating a concave mirror, etc., but without a beam splitter, and also can be employed with this embodiment. The disclosures of the above-mentioned U.S. patents, as well as the European patent application publication are incorporated herein by reference in their entireties.
[0026] The reticle stage assembly 18 holds and positions the reticle 28 relative to the optical assembly 16 and the wafer 30. In one embodiment, the reticle stage assembly 18 includes a reticle stage 38 that retains the reticle 28 and a reticle stage mover assembly 40 that moves and positions the reticle stage 38 and reticle 28.
[0027] Each stage mover assembly 40, 44 (44 being for the substrate) can move the respective stage 38, 42 with three degrees of freedom, less than three degrees of freedom, or more than three degrees of freedom. For example, in alternative embodiments, each stage mover assembly 40, 44 can move the respective stage 38, 42 with one, two, three, four, five or six degrees of freedom. The reticle stage mover assembly 40 and the substrate stage mover assembly 44 can each include one or more movers, such as rotary motors, voice coil motors, linear motors utilizing a Lorentz force to generate drive force, electromagnetic movers, planar motors, or other force movers.
[0028] In photolithography systems, when linear motors (see U.S. Patent Numbers 5,623,853 or 5,528,118 which are incorporated by reference herein in their entireties) are used in the wafer stage assembly or the reticle stage assembly, the linear motors can be either an air levitation type employing air bearings or a magnetic levitation type using Lorentz force or reactance force. Additionally, the stage could move along a guide, or it could be a guideless type stage that uses no guide.
[0029] Alternatively, one of the stages could be driven by a planar motor, which drives the stage by an electromagnetic force generated by a magnet unit having two- dimensionally arranged magnets and an armature coil unit having two-dimensionally arranged coils in facing positions. With this type of driving system, either the magnet unit or the armature coil unit is connected to the stage base and the other unit is mounted on the moving plane side of the stage.
[0030] Movement of the stages as described above generates reaction forces that can affect performance of the photolithography system. Reaction forces generated by the wafer (substrate) stage motion can be mechanically transferred to the floor (ground) by use of a frame member as described in U.S. Patent No. 5,528,100. Additionally, reaction forces generated by the reticle (mask) stage motion can be mechanically transferred to the floor (ground) by use of a frame member as described in U.S. Patent No. 5,874,820. The disclosures of U.S. Patent Numbers 5,528,100 and 5,874,820 are incorporated herein by reference in their entireties.
[0031] The measurement system 22 monitors movement of the reticle 28 and the wafer 30 relative to the optical assembly 16 or some other reference. With this information, the control system 24 can control the reticle stage assembly 18 to precisely position the reticle 28 and the substrate stage assembly 20 to precisely position the wafer 30. The design of the measurement system 22 can vary. For example, the measurement system 22 can utilize multiple laser interferometers, encoders, mirrors, and/or other measuring devices.
[0032] The control system 24 receives information from the measurement system 22 and controls the stage assemblies 18, 20 to precisely position the reticle 28 and the wafer 30. Additionally, the control system 24 can control the operation of the components of the environmental system 26. The control system 24 can include one or more processors and circuits. [0033] The environmental system 26 controls the environment in a space (not shown) between the optical assembly 16 and the wafer 30. The space includes an imaging field. The imaging field includes the area adjacent to the region of the wafer 30 that is being exposed and the area in which the beam of light energy travels between the optical assembly 16 and the wafer 30. With this design, the environmental system 26 can control the environment in the imaging field. The desired environment created and/or controlled in the space by the environmental system 26 can vary accordingly to the wafer 30 and the design of the rest of the components of the lithography machine 10, including the illumination system 14. For example, the desired controlled environment can be a liquid such as water. Alternatively, the desired controlled environment can be another type of fluid such as a gas. In various embodiments, the space may range from 0.1 mm to 10mm in height between top surface of the wafer 30 and the last optical element of the optical assembly 16.
[0034] In one embodiment, the environmental system 26 fills the imaging field and the rest of the space with an immersion fluid. The design of the environmental system 26 and the components of the environmental system 26 can be varied, hi different embodiments, the environmental system 26 delivers and/or injects immersion fluid into the space using spray nozzles, electro-kinetic sponges, porous materials, etc. and removes the fluid from the space using vacuum pumps, sponges, and the like. The environmental system 26 confines the immersion fluid in the space below the optical assembly 16. The environmental system 26 forms part of the boundary of the space between the optical assembly 16 and one or more objects, for example the wafer 30, the wafer stage assembly 20, or both. The immersion fluid confined by the environmental system 26 covers a localized area on a surface of the wafer 30, the wafer stage assembly 20, or both. The design of the environmental system 26 can vary. For example, it can inject the immersion fluid at one or more locations at or near the space. Further, the immersion fluid system can assist in removing and/or scavenging the immersion fluid at one or more locations at or near the wafer 30, the space and/or the edge of the optical assembly 16. For additional details on various environmental systems, see, for example, U.S. 2007/0046910 Al, U.S. 2006/0152697 Al, U.S. 2006/0023182 Al and U.S. 2006/0023184 Al, the disclosures of which are incorporated herein by reference in their entireties.
[0035] Referring to Figs. 2A and 2B, a cross section and a plan (overhead) view of an immersion lithography machine illustrating one embodiment are shown. The lithography machine 200 includes an optical assembly 16 and a stage assembly 202 that includes a wafer table 204 and a wafer stage 206. The wafer table 204 is configured to support a wafer 208 (or any other type of substrate) under the optical assembly 16. An environmental system 26, surrounding the optical assembly 16, is used to supply and remove immersion fluid 212 from the space between the wafer 208 and the lower most optical element of the optical assembly 16. A substrate exchange system 216, including a wafer loader 218 (i.e., a robot) and an alignment tool 220 (for example, a microscope and CCD camera), is configured to remove the wafer 208 on the wafer table 204 and replace it with a second wafer. This is typically accomplished using the wafer loader 218 to remove the wafer 208 from the wafer table 204. Subsequently, the second wafer (not shown) is placed onto the wafer loader 218, aligned using the alignment tool 220, and then positioned under the optical assembly 16 on the wafer table 204. As best illustrated in Figure 2B, a set of motors 222 are used to move the wafer assembly 202 including the wafer table 204 and wafer stage 206 in up to six degrees of freedom (X, Y, Z, 0χ,, θy, θz) during operation. As noted above, the motors 222 can be any type of motors, such as linear motors, rotary motors, voice coil motors, etc.
[0036] The immersion lithography machine 200 also includes an insertion member positioning system 224 that is configured to maintain some of the immersion fluid 212 in a space below the optical assembly 16 while the wafer table 204 is away from under the optical assembly 16 (e.g., during wafer exchange, alignment and long fast moves of the substrate away from the optical system). The insertion member positioning system 224 includes a movable insertion member 226, a motor 228, and a control system 230. The movable insertion member 226 is movable into the space between the wafer 208, the wafer table 204, or both, and the lower most optical element of the optical assembly 16, so as to be positioned adjacent to and between the optical assembly 16 and a wafer 208 on the wafer table 204. Specifically, the movable insertion member 226 is movable into the space between the wafer 208, the wafer table 204, or both, and the lower end portion of the environmental system 26, so as to keep the immersion fluid 212 in the space between the movable insertion member 226 and the optical assembly 16. hi this position, as will be discussed below, the movable insertion member 226 causes a portion of the immersion liquid 212 to be trapped between the optical assembly 16 and the insertion member 226. The movable insertion member 226 also is removable from (i.e., out of) the space between the wafer 208 and the lower most optical element of the optical assembly 16. Thus, in the embodiment of Figs. 2 A and 2B, after the movable insertion member 226 is inserted into the space between the wafer 208 and the lower most optical element of the optical assembly 16, the movable insertion member 226 is not released from the motor 228 by the control system 230. That is, the movable insertion member 226 remains attached to the motor 228 (i.e., held by the control system 230) in the position adjacent to and between the optical assembly 16 and a wafer 208 on the wafer table 204. The movable insertion member 226 is held adjacent to the projection system 16 without contacting the projection system 16 after the movable insertion member 226 is moved into the space between the projection system 16 and the substrate wafer 208. The movable insertion member 226 is movable in up to six degrees of freedom directions using one or more motors 228, which are controlled by the control system 230. The motor 228 can be any type of motor. The movable insertion member 226 is positioned under (adjacent to) the optical assembly 16 before the wafer table 204 (the wafer stage 206) and the held wafer is moved away from being under the optical assembly 16.
[0037] Figs. 3 A to 3D illustrate an example of how the movable insertion member 226 keeps the optical assembly 16 in contact with at least a portion of the immersion liquid 212. As shown in Fig. 3 A, immersion liquid 212 is continuously supplied to the immersion fluid element (liquid confinement member) 310 of the environmental system 26 around the last optical element of the optical assembly 16, and is continuously recovered through the recovery element 320, which may be a porous media vacuum, etc., of the environmental system 26. The recovery element 320 (porous media) is provided at the lower surface of the immersion fluid element 310. In Fig. 3 A, the wafer 208 is opposite to the optical assembly 16 and the immersion fluid element 310 (and the recovery element 320). Further, the wafer table 204 or both the wafer 208 and the wafer table 204 may be positioned under the optical assembly 16 and the immersion fluid element 310 (and the recovery element 320). At this time, the movable insertion member 226 is disposed outside of the space between the optical assembly 16 and the wafer 208. Before a wafer exchange, during which the wafer table 204 moves away from the optical assembly 16, the immersion liquid 212 should be removed from the wafer stage 206. Accordingly, the control system 230 directs the motor 228 to move the movable insertion member 226 into the space between the wafer 208 and the lower most optical element of the optical assembly 16. Specifically, the movable insertion member 226 is moved into the space between the wafer 208 and the lower end of the immersion fluid element 310. As shown in Fig. 3B, the movable insertion member 226 divides the immersion liquid 212 in the space into a first portion between the optical assembly 16 and the insertion member 226, and a second portion between the insertion member 226 and the wafer 208. Thus, the movable insertion member 226 keeps the optical assembly 16 in contact with the first portion of the immersion liquid 212 when the wafer 208 is moved away (via movement of the wafer stage 206) from being disposed adjacent to the optical assembly 16. In Fig. 3B, the first portion includes the space between the wafer 208 and the immersion fluid element 310. By moving the wafer 208, as shown in Fig. 3C, the immersion liquid 212 under the movable insertion member 226 can be removed through the porous media 320 of the immersion fluid element 310. When moving the wafer 208, the liquid 212 may be removed from a recovery outlet (not shown) provided on the wafer table 204 and/or a recovery outlet (not shown) provided on the back surface and/or the side surface of the moveable insertion member 226. After all the immersion liquid 212 is recovered from the wafer 208, shown in Fig. 3D, the wafer stage 206 can move long distances at maximum speed without having liquid escaping from the immersion fluid element 310. In addition, because no liquid is left on the wafer 208 or wafer stage 206, no liquid will be scattered due to the movement of the wafer stage 206. Processes like wafer alignment and wafer 208 unload/exchange can be performed at this time. After the new wafer has been aligned using one or more alignment tools 220, the wafer table 204 is repositioned under the optical assembly 16. Preferably, the wafer table 204 is positioned under the movable insertion member 226. The control system 230 then directs the motor 228 to retract the movable insertion member 226 from the space, preventing the escape of the immersion liquid 212 from adjacent the optical assembly 16, and to move the movable insertion member 226 to the position outside the space as shown in Fig. 3 A. As a result, the space between the new wafer and the optical assembly 16 is filled with the immersion liquid 212. Exposure is then performed. In this manner, the insertion member positioning system 224 maintains the immersion liquid 212 adjacent to the lower most element of the optical assembly 16 during wafer exchange and during long fast moves of the substrate away from the optical assembly.
[0038] In various embodiments, the control system 230 may be a separate control system or it can be integrated into the control system used to control the exposure apparatus. Vertical position and/or tilt of at least one of the wafer table 204 and the movable insertion member 226 may be adjusted as needed before, during or after the wafer table 204 is moved out from under the optical assembly 16. The operation that is performed when the wafer table 204 is away from the optical assembly 16 is not limited to a wafer exchange operation. For example, an alignment operation, a measurement operation or other operations that involve long fast moves of the substrate or the wafer table may be executed while maintaining the immersion liquid 212 in the space between the movable insertion member 226 and the optical assembly 16.
[0039] Figures 4 A and 4B are plan views of two different twin stage immersion lithography systems according to other embodiments. For the basic structure and operation of the twin stage lithography systems, see U.S. Patent No. 6,262,796 and U.S. Patent No. 6,341,007. The disclosures of U.S. Patent No. 6,262,796 and U.S. Patent No. 6,341,007 are incorporated herein by reference in their entireties. In both embodiments, a pair of wafer stages WSl and WS2 are shown. Motors 502 are used to move or position the two stages WSl and WS2 in the horizontal direction (in the drawings), whereas motors 504 are used to move or position the stages WSl and WS2 in the vertical direction (in the drawings). The motors 502 and 504 are used to alternatively position one stage under the optical assembly 16 while a wafer exchange and alignment is performed on the other stage. When the exposure of the wafer under the optical assembly 16 is complete, then the two stages are swapped and the above process is repeated. With either configuration, the various embodiments for maintaining immersion liquid in the space under the optical assembly 16 as described and illustrated above with regard to Figures 2A through 3B, can be used with either twin stage arrangement. With regard to the embodiment of Figures 2 A and 2B for example, a single movable insertion member 226, motor 228, and control system 230 could be used adjacent to the optical assembly 16. The movable insertion member 226 is movable separately from the stages WSl and WS2. When stages WSl and WS2 are to be swapped, the movable insertion member 226 is moved into the space between the optical assembly 16 and the wafer 208 to maintain the immersion liquid 212 below the optical assembly 16. During a transition from a first state in which one of the stages WSl and WS2 is positioned under the optical assembly 16 to a second state in which the other of the stages WSl and WS2 is positioned under the optical assembly 16, the movable insertion member 226 is positioned under the optical assembly 16 and the space between the optical assembly 16 and the movable insertion member 226 is filled with the immersion liquid 212.
[0040] In the various embodiments described above, the movable insertion member can be made of a number of different materials, such as ceramic, metal and plastic. Because the movable insertion member is relatively thin and should not be deformed under a load or during an operation, it is preferable that the materials have a high stiffness that is resistant to deformation. The moveable insertion member may have a thickness of 50 microns to 5mm. Preferably, the thickness ranges from 50 microns to 200 microns. These materials also may be coated with Teflon according to other embodiments. The size of the movable insertion member also should be sufficient to cover the area occupied by the immersion liquid. In the various embodiments described above, the surface of the last optical element of the optical assembly 16 is constantly under immersion fluid environment, preventing the formation of a fluid mark (e.g. "a water mark"). In addition, the insertion member is moved, for example, by a robot arm or other actuator. [0041] In some embodiments, the top surface (facing the optical assembly 16) and the bottom surface (facing the wafer 208) of the movable insertion member 226 neither repel nor attract liquid. In other embodiments, the top surface of the movable insertion member 226 attracts liquid (e.g., is hydrophilic) and the bottom surface of the movable insertion member 226 repels liquid (e.g., is hydrophobic). In a further embodiment, shown in Figs. 5A and 5B, the bottom surface of the movable insertion member 226 is hydrophobic, and a hydrophobic bead 501 (not shown to scale) is provided around the perimeter of the top surface of the movable insertion member 226. The top surface of the movable insertion member 226 inside the hydrophobic bead 501 is hydrophilic.
[0042] Semiconductor wafers can be fabricated using the above described systems, by the process shown generally in Figure 6 A. In step 601 the substrate's function and performance characteristics are designed. Next, in step 602, a mask (reticle) having a pattern is designed according to the previous designing step, and in a parallel step 603 a wafer is made from a silicon material. The mask pattern designed in step 602 is exposed onto the wafer from step 603 in step 604 by a photolithography system described hereinabove. In step 605 the semiconductor substrate is assembled (including the dicing process, bonding process and packaging process). Finally, the substrate is then inspected in step 606.
[0043] Figure 6B illustrates a detailed flowchart example of the above-mentioned step 504 in the case of fabricating semiconductor substrates. In Figure 6B, in step 611 (oxidation step), the wafer surface is oxidized. In step 612 (CVD step), an insulation film is formed on the wafer surface. In step 613 (electrode formation step), electrodes are formed on the wafer by vapor deposition. In step 614 (ion implantation step), ions are implanted in the wafer. The above mentioned steps 611-614 form the preprocessing steps for wafers during wafer processing, and selection is made at each step according to processing requirements.
[0044] At each stage of wafer processing, when the above-mentioned preprocessing steps have been completed, the following post-processing steps are implemented. During post-processing, first, in step 615 (photoresist formation step), photoresist is applied to a wafer. Next, in step 616 (exposure step), the above-mentioned exposure substrate is used to transfer the circuit pattern of a mask (reticle) to a wafer. Then in step 617 (developing step), the exposed wafer is developed, and in step 618 (etching step), parts other than residual photoresist (exposed material surface) are removed by etching. In step 619 (photoresist removal step), unnecessary photoresist remaining after etching is removed. [0045] Multiple circuit patterns are formed by repetition of these preprocessing and post-processing steps.
[0046] While the particular lithography machines as shown and disclosed herein are fully capable of obtaining the objects and providing the advantages herein before stated, it is to be understood that they are merely illustrative embodiments of the invention, and that the invention is not limited to these embodiments.

Claims

WHAT IS CLAIMED IS:
1. A lithographic projection apparatus comprising: an optical assembly that projects an image onto a substrate; a stage assembly including a substrate table that supports the substrate adjacent to the optical assembly, a space between the optical assembly and the substrate being filled with an immersion liquid; and an insertion member removably insertable into the space between the optical assembly and the substrate, the substrate table, or both, to divide the immersion liquid in the space into a first portion and a second portion, the first portion disposed between the optical assembly and the insertion member, the second portion disposed between the insertion member and the substrate, the substrate table, or both, the insertion member keeping the optical assembly in contact with the first portion of the immersion liquid when the substrate is moved away from being disposed adjacent to the optical assembly.
2. The apparatus of claim 1, further comprising a control system that moves the insertion member into and out of the space between the optical assembly and the substrate, the substrate table, or both.
3. The apparatus of claim 1, further comprising an environmental system that forms at least a part of a boundary of the space.
4. The apparatus of claim 3, wherein the environmental system comprises a porous member that removes the second portion of the immersion liquid when the substrate is moved a long distance away from being adjacent to the optical assembly.
5. The apparatus of claim 3, wherein the environmental system includes a confinement member that confines the immersion liquid in the space.
6. The apparatus of claim 5, wherein the immersion liquid confined by the confinement member covers a localized area of a surface of the substrate during exposure of the substrate.
7. The apparatus of claim 5, wherein the insertion member is removably insertable into a space between the confinement member and the substrate, the substrate table, or both.
8. The apparatus of claim 1, further comprising a substrate exchange system that replaces a substrate on the substrate table with a second substrate.
9. The apparatus of claim 1, further comprising: a second stage assembly including a second substrate table that supports a second substrate; and a control system that controls movement of the first stage assembly and of the second stage assembly so that the two stage assemblies are alternately positioned adjacent to the optical assembly.
10. The apparatus of claim 9, wherein during a transition from a first state in which one of the substrate tables is positioned under the optical assembly to a second state in which the other of the substrate tables is positioned under the optical assembly, the immersion liquid is maintained under the optical assembly using the insertion member.
11. A device manufacturing method comprising: providing an immersion liquid to a space between a projection system and a substrate supported on a substrate table; moving an insertion member into the space between the projection system and the substrate, the substrate table, or both, to divide the immersion liquid into a first portion disposed between the projection system and the insertion member and a second portion disposed between the insertion member and the substrate, the substrate table, or both; and maintaining the projection system in contact with the first portion of the immersion liquid while moving the substrate away from being disposed adjacent to the projection system.
12. The method of claim 11 , further comprising: removing the second portion of the immersion liquid from between the insertion member and the substrate, the substrate table, or both.
13. The method of claim 12, further comprising: replacing the substrate with a second substrate after the second portion of the immersion liquid is removed.
14. The method of claim 11, wherein the substrate is one of a semiconductor wafer and a glass panel.
15. The method of claim 11, wherein the insertion member is held adjacent to the projection system without contacting the projection system after the insertion member is moved into the space between the projection system and the substrate, the substrate table, or both.
16. A lithographic projection apparatus comprising: an optical assembly that projects an image onto a substrate; a stage assembly including a substrate table that supports the substrate adjacent to the optical assembly, a space between the optical assembly and the substrate being filled with an immersion liquid during exposure of the substrate; an insertion member removably insertable into the space between the optical assembly and the substrate, the substrate table, or both, to divide the immersion liquid in the space into a first portion and a second portion, the first portion disposed between the optical assembly and the insertion member, the second portion disposed between the insertion member and the substrate, the substrate table, or both, the insertion member keeping the optical assembly in contact with the first portion of the immersion liquid when the substrate is moved away from being disposed adjacent to the optical assembly; and a device releasably coupled to the insertion member, the device (i) inserts the insertion member into the space between the optical assembly and the substrate, the substrate table, or both, so that the insertion member can maintain the first portion of the immersion liquid in contact with the optical assembly, and (ii) removes the insertion member out of the space.
17. A lithographic projection apparatus comprising: an optical assembly that projects an image onto a substrate; a stage assembly including a substrate table that supports the substrate adjacent to the optical assembly, a space between the optical assembly and the substrate being filled with an immersion liquid; and an insertion member removably insertable into the space between the optical assembly and the substrate, the substrate table, or both, to divide the immersion liquid in the space into a first portion and a second portion, the first portion disposed between the optical assembly and the insertion member, the second portion disposed between the insertion member and the substrate, the substrate table, or both, the insertion member keeping the optical assembly in contact with the first portion of the immersion liquid when the substrate, the substrate table, or both, is moved away from being disposed adjacent to the optical assembly during a substrate exchange and during moves of the substrate, the substrate table, or both, away from the optical assembly.
18. The method of claim 11 , wherein the projection system maintains contact with the first portion of the immersion liquid during a substrate exchange and during moves of the substrate, the substrate table, or both, away from the optical assembly.
19. The apparatus of claim 7, wherein the confinement member includes a liquid recovery element through which the immersion liquid of the second portion is removed.
20. The apparatus of claim 19, wherein the immersion liquid of the second portion is removed while moving the substrate, the substrate table, or both.
21. The apparatus of claim 7, wherein the immersion liquid of the second portion is removed while moving the substrate, the substrate table, or both.
22. The method of claim 12, wherein the second portion of the immersion liquid is removed while moving the substrate, the substrate table, or both.
23. The apparatus of claim 16, further comprising a confinement member that confines the immersion liquid in the space, wherein the insertion member is removably insertable into a space between the confinement member and the substrate, the substrate table, or both.
24. The apparatus of claim 23, wherein the second portion of the immersion liquid is removed while moving the substrate, the substrate table, or both.
25. The apparatus of claim 24, wherein the confinement member includes a liquid recovery element through which the immersion liquid of the second portion is removed.
26. A device manufacturing method comprising: exposing a substrate by projecting an image onto the substrate by using the optical assembly of the lithographic projection apparatus of claim 16; and developing the exposed substrate.
27. The apparatus of claim 17, further comprising a confinement member that confines the immersion liquid in the space, wherein the insertion member is removably insertable into a space between the confinement member and the substrate, the substrate table, or both.
28. The apparatus of claim 27, wherein the second portion of the immersion liquid is removed while moving the substrate, the substrate table, or both.
29. The apparatus of claim 28, wherein the confinement member includes a liquid recovery element through which the immersion liquid of the second portion is removed.
30. A device manufacturing method comprising: exposing a substrate by projecting an image onto the substrate by using the optical assembly of the lithographic projection apparatus of claim 17; and developing the exposed substrate.
31. A device manufacturing method comprising: exposing a substrate by projecting an image onto the substrate by using the optical assembly of the lithographic projection apparatus of claim 1; and developing the exposed substrate.
PCT/US2008/003224 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine WO2008115372A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020187007817A KR20180031083A (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
KR1020157036015A KR20160003326A (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
JP2009553605A JP5282255B2 (en) 2007-03-15 2008-03-12 Apparatus and method for holding immersion fluid adjacent an optical assembly during substrate exchange in an immersion lithography machine
KR1020147027490A KR101580467B1 (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
KR1020097021477A KR101515649B1 (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US91805707P 2007-03-15 2007-03-15
US60/918,057 2007-03-15
US11/976,898 2007-10-29
US11/976,898 US8237911B2 (en) 2007-03-15 2007-10-29 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Publications (2)

Publication Number Publication Date
WO2008115372A1 true WO2008115372A1 (en) 2008-09-25
WO2008115372A8 WO2008115372A8 (en) 2010-05-06

Family

ID=39762312

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/003224 WO2008115372A1 (en) 2007-03-15 2008-03-12 Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine

Country Status (5)

Country Link
US (4) US8237911B2 (en)
JP (4) JP5282255B2 (en)
KR (4) KR20180031083A (en)
TW (2) TWI440985B (en)
WO (1) WO2008115372A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
JP2009076520A (en) * 2007-09-19 2009-04-09 Canon Inc Exposure apparatus
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
US8610873B2 (en) 2008-03-17 2013-12-17 Nikon Corporation Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate
US8289497B2 (en) * 2008-03-18 2012-10-16 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography
US9223225B2 (en) 2010-01-08 2015-12-29 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, and device manufacturing method
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
US9268231B2 (en) 2012-04-10 2016-02-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9823580B2 (en) 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
US9494870B2 (en) 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9568828B2 (en) 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9720331B2 (en) 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9651873B2 (en) 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
JP6369472B2 (en) * 2013-10-08 2018-08-08 株式会社ニコン Immersion member, exposure apparatus and exposure method, and device manufacturing method
CN104570613B (en) * 2013-10-25 2018-01-19 上海微电子装备(集团)股份有限公司 Submerge head, immersion flow field initialization and maintain method and lithographic equipment
TWI606529B (en) * 2016-11-02 2017-11-21 Lens housing assembly for wafer inspection equipment
JP6610726B2 (en) * 2018-07-11 2019-11-27 株式会社ニコン Immersion member, exposure apparatus and exposure method, and device manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040263809A1 (en) * 2003-06-27 2004-12-30 Canon Kabushiki Kaisha Immersion exposure technique
US20050036121A1 (en) * 2002-11-12 2005-02-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060023186A1 (en) * 2003-04-11 2006-02-02 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20060152697A1 (en) * 2003-09-03 2006-07-13 Nikon Corporation Apparatus and method for providing fluid for immersion lithography

Family Cites Families (143)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS62121417A (en) * 1985-11-22 1987-06-02 Hitachi Ltd Liquid-immersion objective lens device
US5469963A (en) 1992-04-08 1995-11-28 Asyst Technologies, Inc. Sealable transportable container having improved liner
JP2753930B2 (en) 1992-11-27 1998-05-20 キヤノン株式会社 Immersion type projection exposure equipment
JP3747958B2 (en) 1995-04-07 2006-02-22 株式会社ニコン Catadioptric optics
JP3212199B2 (en) 1993-10-04 2001-09-25 旭硝子株式会社 Flat cathode ray tube
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08171054A (en) 1994-12-16 1996-07-02 Nikon Corp Reflection refraction optical system
JPH08316124A (en) 1995-05-19 1996-11-29 Hitachi Ltd Method and apparatus for projection exposing
JPH1020195A (en) 1996-06-28 1998-01-23 Nikon Corp Cata-dioptric system
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
CN1244018C (en) 1996-11-28 2006-03-01 株式会社尼康 Expoure method and equipment producing method
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US6842221B1 (en) 1999-03-12 2005-01-11 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
JP4365934B2 (en) 1999-05-10 2009-11-18 キヤノン株式会社 Exposure apparatus, semiconductor manufacturing apparatus, and device manufacturing method
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
KR100866818B1 (en) 2000-12-11 2008-11-04 가부시키가이샤 니콘 Projection optical system and exposure apparatus comprising the same
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
DE10210899A1 (en) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refractive projection lens for immersion lithography
DE10229818A1 (en) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Focus detection method and imaging system with focus detection system
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
WO2003085708A1 (en) 2002-04-09 2003-10-16 Nikon Corporation Exposure method, exposure device, and device manufacturing method
EP1532489A2 (en) 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
EP1420298B1 (en) * 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
CN101382738B (en) 2002-11-12 2011-01-12 Asml荷兰有限公司 Lithographic projection apparatus
CN100568101C (en) 2002-11-12 2009-12-09 Asml荷兰有限公司 Lithographic equipment and device making method
DE60335595D1 (en) * 2002-11-12 2011-02-17 Asml Netherlands Bv Immersion lithographic apparatus and method of making a device
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (en) 2002-11-18 2004-06-03 Infineon Technologies Ag Optical arrangement used in the production of semiconductor components comprises a lens system arranged behind a mask, and a medium having a specified refractive index lying between the mask and the lens system
DE10258718A1 (en) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projection lens, in particular for microlithography, and method for tuning a projection lens
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
WO2004053955A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure system and device producing method
JP4232449B2 (en) * 2002-12-10 2009-03-04 株式会社ニコン Exposure method, exposure apparatus, and device manufacturing method
EP1573730B1 (en) 2002-12-13 2009-02-25 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
USRE48515E1 (en) 2002-12-19 2021-04-13 Asml Netherlands B.V. Method and device for irradiating spots on a layer
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US7090964B2 (en) 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR20110104084A (en) 2003-04-09 2011-09-21 가부시키가이샤 니콘 Immersion lithography fluid control system
EP1611482B1 (en) 2003-04-10 2015-06-03 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR101238142B1 (en) 2003-04-10 2013-02-28 가부시키가이샤 니콘 Environmental system including a transport region for an immersion lithography apparatus
KR101121655B1 (en) 2003-04-10 2012-03-09 가부시키가이샤 니콘 Environmental system including vaccum scavange for an immersion lithography apparatus
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG2014015135A (en) 2003-04-11 2015-06-29 Nippon Kogaku Kk Cleanup method for optics in immersion lithography
ATE542167T1 (en) 2003-04-17 2012-02-15 Nikon Corp LITHOGRAPHIC IMMERSION DEVICE
JP4025683B2 (en) 2003-05-09 2007-12-26 松下電器産業株式会社 Pattern forming method and exposure apparatus
JP4146755B2 (en) 2003-05-09 2008-09-10 松下電器産業株式会社 Pattern formation method
TWI503865B (en) 2003-05-23 2015-10-11 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
JP4084710B2 (en) 2003-06-12 2008-04-30 松下電器産業株式会社 Pattern formation method
JP4054285B2 (en) 2003-06-12 2008-02-27 松下電器産業株式会社 Pattern formation method
KR101265450B1 (en) 2003-06-19 2013-05-16 가부시키가이샤 니콘 Exposure device and device producing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (en) 2003-06-23 2008-01-09 松下電器産業株式会社 Pattern formation method
JP4084712B2 (en) 2003-06-23 2008-04-30 松下電器産業株式会社 Pattern formation method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
KR20060027832A (en) 2003-07-01 2006-03-28 가부시키가이샤 니콘 Using isotopically specified fluids as optical elements
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
JP4378136B2 (en) * 2003-09-04 2009-12-02 キヤノン株式会社 Exposure apparatus and device manufacturing method
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP4524601B2 (en) 2003-10-09 2010-08-18 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
EP1685446A2 (en) 2003-11-05 2006-08-02 DSM IP Assets B.V. A method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
EP1695148B1 (en) 2003-11-24 2015-10-28 Carl Zeiss SMT GmbH Immersion objective
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP2005175176A (en) 2003-12-11 2005-06-30 Nikon Corp Exposure method and method for manufacturing device
JP2007516613A (en) 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー Objective lens as a microlithographic projection objective comprising at least one liquid lens
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP5102492B2 (en) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー Objective lens for microlithography projection with crystal elements
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
JP4371822B2 (en) 2004-01-06 2009-11-25 キヤノン株式会社 Exposure equipment
JP4429023B2 (en) 2004-01-07 2010-03-10 キヤノン株式会社 Exposure apparatus and device manufacturing method
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
CN102830487A (en) 2004-01-14 2012-12-19 卡尔蔡司Smt有限责任公司 Catadioptric projection objective
CN101793993B (en) 2004-01-16 2013-04-03 卡尔蔡司Smt有限责任公司 Optical elements, optical arrangement and system
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
WO2005074606A2 (en) 2004-02-03 2005-08-18 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
EP1714192A1 (en) 2004-02-13 2006-10-25 Carl Zeiss SMT AG Projection objective for a microlithographic projection exposure apparatus
CN1922528A (en) 2004-02-18 2007-02-28 康宁股份有限公司 Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5130609B2 (en) * 2004-06-10 2013-01-30 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804576B2 (en) * 2004-12-06 2010-09-28 Nikon Corporation Maintenance method, maintenance device, exposure apparatus, and device manufacturing method
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006237291A (en) * 2005-02-25 2006-09-07 Canon Inc Exposure device
US7751026B2 (en) 2005-08-25 2010-07-06 Nikon Corporation Apparatus and method for recovering fluid for immersion lithography
JP4567651B2 (en) * 2005-11-16 2010-10-20 エーエスエムエル ネザーランズ ビー.ブイ. Exposure apparatus and device manufacturing method
US7804577B2 (en) * 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7760324B2 (en) * 2006-03-20 2010-07-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8237911B2 (en) * 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8068209B2 (en) 2007-03-23 2011-11-29 Nikon Corporation Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool
US8134685B2 (en) * 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
US8451425B2 (en) * 2007-12-28 2013-05-28 Nikon Corporation Exposure apparatus, exposure method, cleaning apparatus, and device manufacturing method
US8610873B2 (en) * 2008-03-17 2013-12-17 Nikon Corporation Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050036121A1 (en) * 2002-11-12 2005-02-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060023186A1 (en) * 2003-04-11 2006-02-02 Nikon Corporation Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
US20040263809A1 (en) * 2003-06-27 2004-12-30 Canon Kabushiki Kaisha Immersion exposure technique
US20060152697A1 (en) * 2003-09-03 2006-07-13 Nikon Corporation Apparatus and method for providing fluid for immersion lithography

Also Published As

Publication number Publication date
US8743343B2 (en) 2014-06-03
US20120262687A1 (en) 2012-10-18
JP2014168068A (en) 2014-09-11
TWI440985B (en) 2014-06-11
US8400610B2 (en) 2013-03-19
JP5327768B2 (en) 2013-10-30
TW200907586A (en) 2009-02-16
KR20140124867A (en) 2014-10-27
TWI545407B (en) 2016-08-11
JP5282255B2 (en) 2013-09-04
US20130141702A1 (en) 2013-06-06
US20140232999A1 (en) 2014-08-21
KR101580467B1 (en) 2015-12-28
US20080225246A1 (en) 2008-09-18
KR20180031083A (en) 2018-03-27
JP2013225693A (en) 2013-10-31
JP2010521814A (en) 2010-06-24
KR20100015585A (en) 2010-02-12
WO2008115372A8 (en) 2010-05-06
KR20160003326A (en) 2016-01-08
JP5510600B2 (en) 2014-06-04
KR101515649B1 (en) 2015-04-27
JP2013123079A (en) 2013-06-20
JP5725227B2 (en) 2015-05-27
US8237911B2 (en) 2012-08-07
US9217933B2 (en) 2015-12-22
TW201437769A (en) 2014-10-01

Similar Documents

Publication Publication Date Title
US9217933B2 (en) Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US8634057B2 (en) Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08726717

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009553605

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20097021477

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08726717

Country of ref document: EP

Kind code of ref document: A1