WO2008123289A1 - Silicon nitride film and nonvolatile semiconductor memory device - Google Patents
Silicon nitride film and nonvolatile semiconductor memory device Download PDFInfo
- Publication number
- WO2008123289A1 WO2008123289A1 PCT/JP2008/055679 JP2008055679W WO2008123289A1 WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1 JP 2008055679 W JP2008055679 W JP 2008055679W WO 2008123289 A1 WO2008123289 A1 WO 2008123289A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon nitride
- nitride film
- memory device
- semiconductor memory
- plasma
- Prior art date
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- -1 nitrogen containing compound Chemical class 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
- 238000003949 trap density measurement Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/532,681 US20100140683A1 (en) | 2007-03-26 | 2008-03-26 | Silicon nitride film and nonvolatile semiconductor memory device |
CN200880009852XA CN101641783B (en) | 2007-03-26 | 2008-03-26 | silicon nitride film and nonvolatile semiconductor memory device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-079852 | 2007-03-26 | ||
JP2007079852 | 2007-03-26 | ||
JP2007-254273 | 2007-09-28 | ||
JP2007254273A JP2008270706A (en) | 2007-03-26 | 2007-09-28 | Silicon nitride film, and nonvolatile semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008123289A1 true WO2008123289A1 (en) | 2008-10-16 |
Family
ID=39830777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/055679 WO2008123289A1 (en) | 2007-03-26 | 2008-03-26 | Silicon nitride film and nonvolatile semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008123289A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010113928A1 (en) * | 2009-03-31 | 2010-10-07 | 東京エレクトロン株式会社 | Method for forming silicon nitride film, method for manufacturing semiconductor memory device, and plasma cvd apparatus |
US8198671B2 (en) * | 2009-04-22 | 2012-06-12 | Applied Materials, Inc. | Modification of charge trap silicon nitride with oxygen plasma |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140682A (en) * | 1997-07-18 | 1999-02-12 | Sony Corp | Non-volatile semiconductor memory and its manufacture |
WO2001069665A1 (en) * | 2000-03-13 | 2001-09-20 | Tadahiro Ohmi | Method for forming dielectric film |
JP2004214506A (en) * | 2003-01-07 | 2004-07-29 | Sony Corp | Method for operating nonvolatile semiconductor memory device |
JP2004235519A (en) * | 2003-01-31 | 2004-08-19 | Renesas Technology Corp | Nonvolatile semiconductor memory |
JP2004241781A (en) * | 2003-02-07 | 2004-08-26 | Samsung Electronics Co Ltd | Single electron transistor having memory function and its manufacturing method |
JP2005347679A (en) * | 2004-06-07 | 2005-12-15 | Renesas Technology Corp | Method of manufacturing nonvolatile semiconductor memory |
JP2006190990A (en) * | 2004-12-10 | 2006-07-20 | Toshiba Corp | Semiconductor device |
-
2008
- 2008-03-26 WO PCT/JP2008/055679 patent/WO2008123289A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140682A (en) * | 1997-07-18 | 1999-02-12 | Sony Corp | Non-volatile semiconductor memory and its manufacture |
WO2001069665A1 (en) * | 2000-03-13 | 2001-09-20 | Tadahiro Ohmi | Method for forming dielectric film |
JP2004214506A (en) * | 2003-01-07 | 2004-07-29 | Sony Corp | Method for operating nonvolatile semiconductor memory device |
JP2004235519A (en) * | 2003-01-31 | 2004-08-19 | Renesas Technology Corp | Nonvolatile semiconductor memory |
JP2004241781A (en) * | 2003-02-07 | 2004-08-26 | Samsung Electronics Co Ltd | Single electron transistor having memory function and its manufacturing method |
JP2005347679A (en) * | 2004-06-07 | 2005-12-15 | Renesas Technology Corp | Method of manufacturing nonvolatile semiconductor memory |
JP2006190990A (en) * | 2004-12-10 | 2006-07-20 | Toshiba Corp | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010113928A1 (en) * | 2009-03-31 | 2010-10-07 | 東京エレクトロン株式会社 | Method for forming silicon nitride film, method for manufacturing semiconductor memory device, and plasma cvd apparatus |
US8198671B2 (en) * | 2009-04-22 | 2012-06-12 | Applied Materials, Inc. | Modification of charge trap silicon nitride with oxygen plasma |
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