WO2008128122A3 - Formation of photovoltaic absorber layers on foil substrates - Google Patents
Formation of photovoltaic absorber layers on foil substrates Download PDFInfo
- Publication number
- WO2008128122A3 WO2008128122A3 PCT/US2008/060141 US2008060141W WO2008128122A3 WO 2008128122 A3 WO2008128122 A3 WO 2008128122A3 US 2008060141 W US2008060141 W US 2008060141W WO 2008128122 A3 WO2008128122 A3 WO 2008128122A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- formation
- absorber layers
- photovoltaic absorber
- foil substrates
- absorber layer
- Prior art date
Links
- 239000006096 absorbing agent Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000011888 foil Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200°C and about 600°C and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08745698A EP2179449A2 (en) | 2007-04-11 | 2008-04-11 | Formation of photovoltaic absorber layers on foil substrates |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91125907P | 2007-04-11 | 2007-04-11 | |
US60/911,259 | 2007-04-11 | ||
US12/060,221 | 2008-03-31 | ||
US12/060,221 US20090032108A1 (en) | 2007-03-30 | 2008-03-31 | Formation of photovoltaic absorber layers on foil substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008128122A2 WO2008128122A2 (en) | 2008-10-23 |
WO2008128122A3 true WO2008128122A3 (en) | 2008-12-18 |
Family
ID=42046253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/060141 WO2008128122A2 (en) | 2007-04-11 | 2008-04-11 | Formation of photovoltaic absorber layers on foil substrates |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP2179449A2 (en) |
WO (1) | WO2008128122A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2399295B1 (en) * | 2009-02-20 | 2019-04-10 | Beijing Apollo Ding rong Solar Technology Co., Ltd. | Protective layer for large-scale production of thin-film solar cells |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6323417B1 (en) * | 1998-09-29 | 2001-11-27 | Lockheed Martin Corporation | Method of making I-III-VI semiconductor materials for use in photovoltaic cells |
US7026258B2 (en) * | 2002-04-29 | 2006-04-11 | Electricite De France Service National | Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002084708A2 (en) | 2001-04-16 | 2002-10-24 | Basol Bulent M | Method of forming semiconductor compound film for fabrication of electronic device and film produced by same |
US6946597B2 (en) | 2002-06-22 | 2005-09-20 | Nanosular, Inc. | Photovoltaic devices fabricated by growth from porous template |
-
2008
- 2008-04-11 EP EP08745698A patent/EP2179449A2/en not_active Withdrawn
- 2008-04-11 WO PCT/US2008/060141 patent/WO2008128122A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6368892B1 (en) * | 1997-07-28 | 2002-04-09 | Bp Corporation North America Inc. | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6323417B1 (en) * | 1998-09-29 | 2001-11-27 | Lockheed Martin Corporation | Method of making I-III-VI semiconductor materials for use in photovoltaic cells |
US7026258B2 (en) * | 2002-04-29 | 2006-04-11 | Electricite De France Service National | Method for making thin-film semiconductors based on I-III-VI2 compounds, for photovoltaic applications |
Also Published As
Publication number | Publication date |
---|---|
WO2008128122A2 (en) | 2008-10-23 |
EP2179449A2 (en) | 2010-04-28 |
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