WO2008136882A3 - Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition - Google Patents

Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition Download PDF

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Publication number
WO2008136882A3
WO2008136882A3 PCT/US2008/002105 US2008002105W WO2008136882A3 WO 2008136882 A3 WO2008136882 A3 WO 2008136882A3 US 2008002105 W US2008002105 W US 2008002105W WO 2008136882 A3 WO2008136882 A3 WO 2008136882A3
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WO
WIPO (PCT)
Prior art keywords
attached
modified layer
nanoparticles
size
ald
Prior art date
Application number
PCT/US2008/002105
Other languages
French (fr)
Other versions
WO2008136882A9 (en
WO2008136882A2 (en
Inventor
Stacey F Bent
Rong Chen
Xirong Jiang
Yuji Saito
Original Assignee
Univ Leland Stanford Junior
Honda Motor Co Ltd
Stacey F Bent
Rong Chen
Xirong Jiang
Yuji Saito
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Leland Stanford Junior, Honda Motor Co Ltd, Stacey F Bent, Rong Chen, Xirong Jiang, Yuji Saito filed Critical Univ Leland Stanford Junior
Priority to JP2009549643A priority Critical patent/JP5412294B2/en
Publication of WO2008136882A2 publication Critical patent/WO2008136882A2/en
Publication of WO2008136882A9 publication Critical patent/WO2008136882A9/en
Publication of WO2008136882A3 publication Critical patent/WO2008136882A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method of growing spatially-separated and size-controlled particles on substrate surfaces is provided. The method utilizes chemical modification of the substrate surface, an atomic layer deposition (ALD) system, providing a modified layer to the substrate surface and providing an ALD material for nanoparticle deposition. The method induces a Volmer-Weber growth method, where islands of the nanoparticles are formed on the surface. The modified layer controls a number of nucleation sites on the surface, where controlling the number of ALD cycles limits an amount of deposited the material for discrete the nanoparticles. The modified layer can include self-assembled monolayers, modified hydrophobicity of the surface, H-terminated surfaces, and varying functional groups within the modified layer, where thermally attached alkenes, photochemically attached alkenes, thermally attached alkynes or photochemically attached alkynes are attached to the H-terminated surfaces, and the density of the nucleation sites of the nanoparticles are thereby managed.
PCT/US2008/002105 2007-02-14 2008-02-14 Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition WO2008136882A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009549643A JP5412294B2 (en) 2007-02-14 2008-02-14 Fabrication method of spatially dispersed nanostructures controlled in size by atomic layer deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90158407P 2007-02-14 2007-02-14
US60/901,584 2007-02-14

Publications (3)

Publication Number Publication Date
WO2008136882A2 WO2008136882A2 (en) 2008-11-13
WO2008136882A9 WO2008136882A9 (en) 2008-12-24
WO2008136882A3 true WO2008136882A3 (en) 2009-02-26

Family

ID=39939724

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/002105 WO2008136882A2 (en) 2007-02-14 2008-02-14 Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition

Country Status (3)

Country Link
US (1) US8084087B2 (en)
JP (1) JP5412294B2 (en)
WO (1) WO2008136882A2 (en)

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Also Published As

Publication number Publication date
WO2008136882A9 (en) 2008-12-24
WO2008136882A2 (en) 2008-11-13
US8084087B2 (en) 2011-12-27
US20080274282A1 (en) 2008-11-06
JP2010518644A (en) 2010-05-27
JP5412294B2 (en) 2014-02-12

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