WO2008139654A1 - Ｉｎ－Ｇａ－Ｚｎ－Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット - Google Patents

Ｉｎ－Ｇａ－Ｚｎ－Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット Download PDF

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Publication number
WO2008139654A1
WO2008139654A1 PCT/JP2007/073135 JP2007073135W WO2008139654A1 WO 2008139654 A1 WO2008139654 A1 WO 2008139654A1 JP 2007073135 W JP2007073135 W JP 2007073135W WO 2008139654 A1 WO2008139654 A1 WO 2008139654A1
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Prior art keywords
target
film deposition
type oxide
physical film
oxide sinter
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PCT/JP2007/073135
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English (en)
French (fr)
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Koki Yano
Kazuyoshi Inoue
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Idemitsu Kosan Co., Ltd.
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Priority to KR1020097023459A priority Critical patent/KR101427438B1/ko
Priority to US12/599,548 priority patent/US8153031B2/en
Priority to CN2007800529225A priority patent/CN101663250B/zh
Publication of WO2008139654A1 publication Critical patent/WO2008139654A1/ja

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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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Abstract

　インジウム元素（Ｉｎ）、ガリウム元素（Ｇａ）、亜鉛元素（Ｚｎ）及び錫元素（Ｓｎ）を含み、Ｇａ２Ｉｎ６Ｓｎ２Ｏ１６又は（Ｇａ，Ｉｎ）２Ｏ３で表される化合物を含むこと特徴とする酸化物焼結体。
PCT/JP2007/073135 2007-05-11 2007-11-30 Ｉｎ－Ｇａ－Ｚｎ－Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット WO2008139654A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097023459A KR101427438B1 (ko) 2007-05-11 2007-11-30 Ｉｎ-Ｇａ-Ｚｎ-Ｓｎ계 산화물 소결체, 및 물리 성막용 타겟
US12/599,548 US8153031B2 (en) 2007-05-11 2007-11-30 In-Ga-Zn-Sn type oxide sinter and target for physical film deposition
CN2007800529225A CN101663250B (zh) 2007-05-11 2007-11-30 In-Ga-Zn-Sn系氧化物烧结体及物理成膜用靶

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-126525 2007-05-11
JP2007126525A JP5522889B2 (ja) 2007-05-11 2007-05-11 Ｉｎ−Ｇａ−Ｚｎ−Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット

Publications (1)

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WO2008139654A1 true WO2008139654A1 (ja) 2008-11-20

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PCT/JP2007/073135 WO2008139654A1 (ja) 2007-05-11 2007-11-30 Ｉｎ－Ｇａ－Ｚｎ－Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット

Country Status (6)

Country Link
US (1) US8153031B2 (ja)
JP (1) JP5522889B2 (ja)
KR (1) KR101427438B1 (ja)
CN (1) CN101663250B (ja)
TW (1) TWI415820B (ja)
WO (1) WO2008139654A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153802A (ja) * 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US20120118726A1 (en) * 2009-11-18 2012-05-17 Idemitsu Kosan Co., Ltc. In-ga-zn-o type sputtering target
EP2503019A1 (en) * 2009-11-19 2012-09-26 Idemitsu Kosan Co., Ltd. In-Ga-Zn-O-BASED OXIDE SINTERED BODY SPUTTERING TARGET WITH EXCELLENT STABILITY DURING LONG-TERM DEPOSITION
US8999208B2 (en) 2010-02-24 2015-04-07 Idemitsu Kosan Co., Ltd. In-Ga-Sn oxide sinter, target, oxide semiconductor film, and semiconductor element
US9177872B2 (en) * 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
JP2017206430A (ja) * 2011-08-22 2017-11-24 出光興産株式会社 Ｉｎ−Ｇａ−Ｓｎ系酸化物焼結体

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007026783A1 (ja) 2005-09-01 2007-03-08 Idemitsu Kosan Co., Ltd. スパッタリングターゲット、透明導電膜及び透明電極
KR101549295B1 (ko) 2008-12-12 2015-09-01 이데미쓰 고산 가부시키가이샤 복합 산화물 소결체 및 그것으로 이루어지는 스퍼터링 타겟
KR20110111369A (ko) * 2009-02-04 2011-10-11 헬리오볼트 코오퍼레이션 인듐 함유의 투명한 전도성 산화막을 형성하는 방법과 이 방법에 사용되는 금속 타겟 및 상기 투명한 전도성 산화막을 이용하는 광발전 장치
KR101763126B1 (ko) * 2009-11-06 2017-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP4843083B2 (ja) 2009-11-19 2011-12-21 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ系酸化物スパッタリングターゲット
KR101754704B1 (ko) 2009-11-20 2017-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
KR101824124B1 (ko) 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR101720072B1 (ko) 2009-12-11 2017-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
JP2012124446A (ja) 2010-04-07 2012-06-28 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
KR20110124530A (ko) * 2010-05-11 2011-11-17 삼성전자주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 박막 트랜지스터 표시판
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