WO2009045091A3 - A vertical thin polysilicon substrate isfet - Google Patents

A vertical thin polysilicon substrate isfet Download PDF

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Publication number
WO2009045091A3
WO2009045091A3 PCT/MY2008/000116 MY2008000116W WO2009045091A3 WO 2009045091 A3 WO2009045091 A3 WO 2009045091A3 MY 2008000116 W MY2008000116 W MY 2008000116W WO 2009045091 A3 WO2009045091 A3 WO 2009045091A3
Authority
WO
WIPO (PCT)
Prior art keywords
isfet
polysilicon
thin polysilicon
substrate
vertical
Prior art date
Application number
PCT/MY2008/000116
Other languages
French (fr)
Other versions
WO2009045091A2 (en
Inventor
Mohd Ismahadi Syono
Rani Rozina Abdul
Original Assignee
Mimos Berhad
Mohd Ismahadi Syono
Rani Rozina Abdul
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad, Mohd Ismahadi Syono, Rani Rozina Abdul filed Critical Mimos Berhad
Publication of WO2009045091A2 publication Critical patent/WO2009045091A2/en
Publication of WO2009045091A3 publication Critical patent/WO2009045091A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing

Abstract

The present invention generally relates to a vertical thin polysilicon substrate ISFET for the measurement of hydrogen ions (pH) and other ion activity in solution characterized in that wherein the present invention comprises of a method of making polysilicon vertical ISFET which is fully CMOS compatible and wherein the substrate is the polysilicon which is vertically sandwiched between a source and a drain and wherein a very high drive current is possible to achieve due to the thin polysilicon material and wherein the sandwiched structure is designed to ensure excellent noise isolation and wherein the gate lies on the same surface level as the drain and hence a very large area for better gate sensitivity is possible.
PCT/MY2008/000116 2007-10-05 2008-09-29 A vertical thin polysilicon substrate isfet WO2009045091A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI20071721 2007-10-05
MYPI20071721 2007-10-05

Publications (2)

Publication Number Publication Date
WO2009045091A2 WO2009045091A2 (en) 2009-04-09
WO2009045091A3 true WO2009045091A3 (en) 2009-06-04

Family

ID=40526855

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MY2008/000116 WO2009045091A2 (en) 2007-10-05 2008-09-29 A vertical thin polysilicon substrate isfet

Country Status (1)

Country Link
WO (1) WO2009045091A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014098566A1 (en) * 2012-12-21 2014-06-26 Mimos Berhad An ion sensitive field effect transistor
CN107064255B (en) * 2017-05-24 2019-04-30 江苏大学 A kind of combination electrode formula pH sensor and preparation method thereof based on CMOS technology

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534825A (en) * 1980-03-10 1985-08-13 Cordis Europa, N.V. Method of making an electrochemical sensing cell
JPS63235853A (en) * 1987-03-24 1988-09-30 Shindengen Electric Mfg Co Ltd Semiconductor ion sensor
US5393401A (en) * 1991-05-10 1995-02-28 Knoll; Meinhard Method of manufacturing miniaturized components of chemical and biological detection sensors that employ ion-selective membranes, and supports for such components
US5918110A (en) * 1996-05-31 1999-06-29 Siemens Aktiengesellschaft Method for manufacturing a combination of a pressure sensor and an electrochemical sensor
US7211459B2 (en) * 2003-05-09 2007-05-01 Au Optronics Corp. Fabrication method of an ion sensitive field effect transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534825A (en) * 1980-03-10 1985-08-13 Cordis Europa, N.V. Method of making an electrochemical sensing cell
JPS63235853A (en) * 1987-03-24 1988-09-30 Shindengen Electric Mfg Co Ltd Semiconductor ion sensor
US5393401A (en) * 1991-05-10 1995-02-28 Knoll; Meinhard Method of manufacturing miniaturized components of chemical and biological detection sensors that employ ion-selective membranes, and supports for such components
US5918110A (en) * 1996-05-31 1999-06-29 Siemens Aktiengesellschaft Method for manufacturing a combination of a pressure sensor and an electrochemical sensor
US7211459B2 (en) * 2003-05-09 2007-05-01 Au Optronics Corp. Fabrication method of an ion sensitive field effect transistor

Also Published As

Publication number Publication date
WO2009045091A2 (en) 2009-04-09

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