WO2009048703A1 - Showerhead electrode assemblies and plasma processing chambers incorporating the same - Google Patents
Showerhead electrode assemblies and plasma processing chambers incorporating the same Download PDFInfo
- Publication number
- WO2009048703A1 WO2009048703A1 PCT/US2008/075676 US2008075676W WO2009048703A1 WO 2009048703 A1 WO2009048703 A1 WO 2009048703A1 US 2008075676 W US2008075676 W US 2008075676W WO 2009048703 A1 WO2009048703 A1 WO 2009048703A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- backside
- electrode
- showerhead electrode
- control plate
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 24
- 238000000429 assembly Methods 0.000 title abstract description 3
- 230000000712 assembly Effects 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 119
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 119
- 239000010703 silicon Substances 0.000 claims abstract description 119
- 239000007772 electrode material Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 6
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229920004943 Delrin® Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32605—Removable or replaceable electrodes or electrode systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/03—Mounting, supporting, spacing or insulating electrodes
- H01J2237/032—Mounting or supporting
Definitions
- the present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein.
- Plasma processing apparatuses can be used to process substrates by a variety of techniques including, but not limited to, etching, physical vapor deposition, chemical vapor deposition, ion implantation, resist removal, etc.
- one type of plasma processing chamber contains an upper electrode, commonly referred to as a showerhead electrode, and a bottom electrode. An electric field is established between the electrodes to excite a process gas into the plasma state to process substrates in the reaction chamber.
- an electrode assembly comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware
- the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses.
- the thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts.
- the securing hardware and the backside inserts are configured to maintain engagement of the thermal control plate and the silicon-based showerhead electrode and to permit disengagement of the thermal control plate and the silicon-based showerhead electrode while isolating the silicon-based electrode material of the silicon-based showerhead electrode from frictional contact with the securing hardware during disengagement.
- a plasma processing chamber comprising a vacuum source, a process gas supply, a plasma power supply, a substrate support, and an upper electrode assembly fabricated to incorporate one or more of the aspects of the present invention.
- an electrode assembly comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of threaded partial recesses formed in the backside of the silicon-based showerhead electrode.
- the thermal control plate comprises securing hardware passages configured to permit securing hardware to access the threaded partial recesses and the securing hardware engages the threaded partial recesses along the backside of the silicon- based showerhead electrode.
- Fig. 1 is a schematic illustration of a plasma processing chamber incorporating particular aspects of some embodiments of the present invention
- Fig. 2 is a plan view of the backside of a showerhead electrode according to one embodiment of the present invention
- Fig. 3 is a cross-sectional illustration of a portion of a showerhead electrode according to one embodiment of the present invention
- Fig. 4 is an isometric illustration of the backside and thickness dimensions of a showerhead electrode according to one embodiment of the present invention.
- Fig. 5 is a cross sectional illustration of an electrode assembly including securing hardware according to one embodiment of the present invention
- Figs. 6, 7, 8A, and 9 are cross sectional illustrations of a portion of an electrode assembly including securing hardware according to some alternative embodiments of the present invention
- FIGs. 8B and 8C are schematic illustrations presented to clarify the structure and operation of the subject matter illustrated in Fig. 8A;
- Figs. 10 and 11 illustrate securing hardware and complementary machined portions of an electrode assembly according to a further alternative embodiment of the present invention.
- the various aspects of the present invention can be illustrated in the context of a plasma processing chamber 10, which is merely illustrated schematically in Fig. 1 to avoid limitation of the concepts of the present invention to particular plasma processing configurations, or components, that may not be integral to the subject matter of the present invention.
- the plasma processing chamber 10 comprises a vacuum source 20, a process gas supply 30, a plasma power supply 40, a substrate support 50 including a lower electrode assembly 55, and an upper electrode assembly 100.
- the electrode assembly 100 comprises securing hardware 60, alignment pins 66, a thermal control plate 70, a silicon- based showerhead electrode 80, and a thermally conductive gasket 75 positioned between the frontside 74 of the thermal control plate 70 and the backside 82 of the silicon-based showerhead electrode 80.
- the thermal control plate 70 comprises a backside 72, a frontside 74, and one or more process gas passages 76 configured to direct process gas to the frontside 74 of the thermal control plate 70.
- thermal control plate materials include aluminum, aluminum alloys, or similar thermal conductors.
- suitable thermal control plate materials include aluminum, aluminum alloys, or similar thermal conductors.
- a variety of teachings may be relied upon in the design of thermal control plates including, but not limited to, U.S. Pub. No. 2005/0133160.
- the silicon-based showerhead electrode 80 comprises a backside 82, a frontside 84, and a plurality of showerhead passages 86 extending from the backside 82 of the silicon- based showerhead electrode 80 to the frontside 84 of the silicon-based showerhead electrode 80.
- the silicon-based showerhead electrode 80 further comprises a plurality of partial recesses 88 formed in the backside 82 of the electrode 80. As is illustrated in Fig. 5, the partial recesses 88 leave a thickness x of silicon-based electrode material between the recess 88 and the frontside 84 of the electrode 80.
- Backside inserts 90 are positioned in the partial recesses along the backside 82 of the electrode 80.
- the silicon-based electrode material between the recess 88 and the frontside 84 of the showerhead electrode 80 helps minimize potential source of contamination in the plasma processing chamber 10 by isolating the backside inserts 90 and the securing hardware 60 from reactive species in the plasma chamber.
- the thickness x is preferably at least approximately 0.25 cm or, stated differently, at least approximately 25% of the total thickness of the silicon-based showerhead electrode 80.
- this isolation can be enhanced by configuring the thermal control plate 70 and the silicon-based showerhead electrode 80 to define a hermetically sealed plasma partition 65 such that gas and reactive species within the evacuated portion 15 of the plasma processing chamber 10 cannot reach the securing hardware 60 and the inserts.
- the particular manner in which the plasma partition 65 is defined will vary depending on the respective configurations of the thermal control plate 70 and the showerhead electrode 80. It -A- is contemplated that in most cases, the respective materials forming the thermal control plate 70 and the showerhead electrode 80 will define the majority of the partition.
- a variety of sealing members can be used to enhance the partition, particularly where the thermal control plate 70 and the showerhead electrode 80 interface with each other and with other components of the plasma processing chamber 10.
- the aforementioned isolation of the backside inserts 90 and the securing hardware 60 from reactive species in the plasma chamber 10 can be further enhanced by positioning the backside inserts 90 in the partial recesses 88 such that they are inset or, at least, flush relative to the backside 82 of the silicon-based showerhead electrode 80.
- the securing hardware 60 can be positioned in securing hardware passages 78 in the thermal control plate 70 such that it is inset or, at least, flush relative to a backside 72 of the thermal control plate 70.
- the thermal control plate 70 comprises securing hardware passages 78 that are configured to permit securing hardware 60 to access the backside inserts 90 positioned in the partial recesses 88 along the backside 82 of the silicon-based showerhead electrode 80.
- the thermal control plate 70 and the silicon-based showerhead electrode 80 can be engaged using the securing hardware 60 and the backside inserts 90.
- the frontside 74 of the thermal control plate 70 faces the backside 82 of the silicon-based showerhead electrode 80 and the showerhead passages 86 in the silicon-based showerhead electrode 80 are aligned with the process gas passages 76 in the thermal control plate 70.
- the securing hardware passages 78 are aligned with the backside inserts 90 positioned in the partial recesses 88 along the backside 82 of the electrode 80.
- the securing hardware 60 may extend through the securing hardware passages 78 in the thermal control plate 70 and engage the backside inserts 90, which are positioned in the partial recesses 88 along the backside 82 of the electrode 80.
- the securing hardware 60 and the backside inserts 90 are configured to maintain engagement of the thermal control plate 70 and the silicon-based showerhead electrode 80.
- the securing hardware 60 and the backside inserts 90 are configured to permit disengagement of the thermal control plate 80 and the showerhead electrode 80.
- the silicon-based electrode material of the silicon-based showerhead electrode 80 is isolated from frictional contact with the securing hardware 60 by the relatively resilient material of the backside inserts 90 during engagement and disengagement. This isolation, provided by the backside inserts 90, serves to eliminate abrasion of the silicon-based electrode material by the securing hardware 60 as a source of contamination in the plasma chamber 10.
- the resiliency of the backside inserts 90 also permit repeated, nondestructive engagement and disengagement of the thermal control plate 70 and the silicon-based showerhead electrode 80.
- the backside inserts 90 comprise significant amounts of polyetheretherketone (PEEK) formulated and manufactured such that the hardness of the backside inserts 90 does not exceed the hardness of the silicon-based electrode material.
- PEEK polyetheretherketone
- Additional candidate materials include, but are not limited to Delrin® or other acetal resin engineering plastics formulated as filled or unfilled homopolymers or copolymers, nylon, polytetrafluoroethylene (PTFE), or combinations thereof.
- the backside inserts 90 can be configured as anchors in the partial recesses 88 formed in the backside 82 of the silicon-based showerhead electrode 80. More specifically, in the embodiment of Fig. 5, the backside insert 90 is anchored in the partial recess by providing a threaded portion in the silicon-based electrode material. With the insert 90 in place, the securing hardware 60, which may for example comprise a threaded screw or bolt, engages the backside insert 90 to secure the showerhead electrode 80 to the thermal control plate 70. In the embodiment of Fig. 7, the backside insert is anchored in the partial recess via a bonding agent.
- the partial recess 88 is machined to comprise an undercut portion 89 and the backside insert 90 is anchored in the partial recess 88 by inserting the insert 90 into the recess 88 and rotating it into the undercut portion 89 of the partial recess 88.
- the backside insert 90 can be configured as a stud comprising a backside extension 92 that is configured to extend into one of the securing hardware passages 78 in the thermal control plate 70.
- the securing hardware 60 is configured to access the backside extension 92 of the backside insert 90 in the securing hardware passage 78 via, for example, a threaded engagement.
- the securing hardware 60, the backside inserts 90, and the partial recess 88 are configured such that, during thermal loading, with the securing hardware 60 and backside insert 90 in an engaged state, the backside insert is able to move with the securing hardware within the partial recess without dislodging from the recess.
- the backside insert 90 is provided with tabs 95 that are configured to complement the undercut portions 89 formed in the electrode material of the showerhead electrode 80.
- the insert 90 can be secured in the recess 88 by aligning the tabs 95 with the corresponding grooves 85 in the electrode 80, inserting the insert 90 in the recess 88, and rotating the insert 90, as defined by the grooves 85.
- the insert 90 can be secured in the recess 88 in a spring-loaded state by providing a spring about a reduced diameter portion 94 of the buried end 96 of the insert 90 and the outside diametrical dimensions of the insert 90 and the size and shape of the tabs 95 are chosen to allow for movement of the insert 90 in the partial recess 88 in the spring-loaded state.
- the backside insert 90 can move with the securing hardware 60 within the partial recess 88 without dislodging from the recess 88 and without degrading the engagement of the securing hardware 60 and the insert 90.
- a backside insert 90 according to the present invention is configured for installation or removal with a screwdriver or other potentially abrasive tool, as is the case in the embodiment of Figs. 10-11, it is contemplated that the slotted driving head of the backside insert 90 can be provided with lateral shielding portions 98 at the edges of the slot or other engaging portion with which the removal tool is to mate.
- the backside insert 90 may comprise one or more lateral shielding portions 98 configured to permit a tool to engage the backside insert at a tool engaging portion thereof without extending beyond the periphery of the insert where it could come into contact with the inside diameter of the recess in the electrode material.
- a variety of spring-loaded configurations can be utilized to reduce any tendency of the securing hardware 60 to become disengaged as a result of stress induced as a result of thermal loading induced during plasma processing.
- one configuration for providing a spring-loaded engagement of the thermal control plate 70 and the silicon-based showerhead electrode 80 is illustrated in Figs. 5-7. In Figs.
- the backside insert 90 is configured as an anchor in one of the partial recesses 88 formed in the backside 82 of the showerhead electrode 80 and the securing hardware 60 comprises a spring element in the form of a spring-loaded washer 62 configured to oppose a force of engagement provided when the securing hardware 60 accesses the backside insert 90.
- the backside insert is omitted in favor of direct threaded engagement with a tapped hole in the electrode material.
- the spring element can be provided as a helical spring 64 arranged about a longitudinal extension of the securing hardware 60 in the securing hardware passage 78.
- silicon-based electrode materials such as single crystal silicon, polysilicon, silicon nitride, and silicon carbide
- the present invention has utility in a variety of contexts, including those where the silicon-based electrode material comprises boron carbide, aluminum nitride, aluminum oxide, or combinations thereof.
- the silicon-based showerhead electrode 80 may be presented in a variety of configurations without departing from the scope of the present invention including, but not limited to, a single-piece, circular showerhead configurations or multi-component, circular showerhead configurations comprising a circular central electrode and one or more peripheral electrodes arranged about the circumference of the central electrode.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010528920A JP5450427B2 (en) | 2007-10-12 | 2008-09-09 | Shower head electrode assembly and plasma processing chamber incorporating the same |
CN200880121177.XA CN101896637B (en) | 2007-10-12 | 2008-09-09 | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/871,586 | 2007-10-12 | ||
US11/871,586 US8152954B2 (en) | 2007-10-12 | 2007-10-12 | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009048703A1 true WO2009048703A1 (en) | 2009-04-16 |
Family
ID=40533040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/075676 WO2009048703A1 (en) | 2007-10-12 | 2008-09-09 | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
Country Status (6)
Country | Link |
---|---|
US (2) | US8152954B2 (en) |
JP (1) | JP5450427B2 (en) |
KR (1) | KR101573947B1 (en) |
CN (2) | CN101896637B (en) |
TW (1) | TWI380392B (en) |
WO (1) | WO2009048703A1 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7721488B1 (en) * | 2005-10-05 | 2010-05-25 | Bennett Scott A | Flashing apparatus for external use on structures |
US8216418B2 (en) * | 2007-06-13 | 2012-07-10 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings |
US8187414B2 (en) | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
US8187413B2 (en) * | 2008-03-18 | 2012-05-29 | Lam Research Corporation | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket |
US8161906B2 (en) | 2008-07-07 | 2012-04-24 | Lam Research Corporation | Clamped showerhead electrode assembly |
US8221582B2 (en) * | 2008-07-07 | 2012-07-17 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US8206506B2 (en) * | 2008-07-07 | 2012-06-26 | Lam Research Corporation | Showerhead electrode |
US8402918B2 (en) * | 2009-04-07 | 2013-03-26 | Lam Research Corporation | Showerhead electrode with centering feature |
US8272346B2 (en) | 2009-04-10 | 2012-09-25 | Lam Research Corporation | Gasket with positioning feature for clamped monolithic showerhead electrode |
TWM412457U (en) * | 2009-09-18 | 2011-09-21 | Lam Res Corp | Showerhead electrode for use in a plasma reaction chamber and showerhead electrode assembly |
JP3160877U (en) | 2009-10-13 | 2010-07-15 | ラム リサーチ コーポレーションLam Research Corporation | End-clamping and machine-fixed inner electrode of showerhead electrode assembly |
US8573152B2 (en) | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
US8470127B2 (en) * | 2011-01-06 | 2013-06-25 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
KR101241049B1 (en) | 2011-08-01 | 2013-03-15 | 주식회사 플라즈마트 | Plasma generation apparatus and plasma generation method |
KR101246191B1 (en) * | 2011-10-13 | 2013-03-21 | 주식회사 윈텔 | Plasma generation apparatus and substrate processing apparatus |
CN102522306A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Spray head |
US11391315B2 (en) * | 2012-10-25 | 2022-07-19 | Elijah Tooling, Inc. | Precision threaded locator fastener bushing |
KR102127715B1 (en) * | 2013-08-09 | 2020-06-29 | 에스케이실트론 주식회사 | An epitaxial reactor |
TW201517112A (en) * | 2013-10-09 | 2015-05-01 | Applied Materials Inc | Multizone hollow cathode discharge system with coaxial and azimuthal symmetry and with consistent central trigger |
FR3020641A1 (en) * | 2014-04-30 | 2015-11-06 | Ion Beam Services | PASSIVE GAS DIFFUSION DEVICE |
US20150361582A1 (en) * | 2014-06-17 | 2015-12-17 | Veeco Instruments, Inc. | Gas Flow Flange For A Rotating Disk Reactor For Chemical Vapor Deposition |
US9528185B2 (en) * | 2014-08-22 | 2016-12-27 | Applied Materials, Inc. | Plasma uniformity control by arrays of unit cell plasmas |
JP2018528616A (en) * | 2015-09-22 | 2018-09-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Shower head support structure |
TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
US10403476B2 (en) | 2016-11-09 | 2019-09-03 | Lam Research Corporation | Active showerhead |
US10607817B2 (en) * | 2016-11-18 | 2020-03-31 | Applied Materials, Inc. | Thermal repeatability and in-situ showerhead temperature monitoring |
JP6747960B6 (en) * | 2016-12-16 | 2020-09-16 | Sppテクノロジーズ株式会社 | Plasma processing equipment |
CN110942969B (en) * | 2018-09-21 | 2022-08-23 | 中微半导体设备(上海)股份有限公司 | Gas shower head assembly and plasma processing equipment thereof |
KR102198929B1 (en) * | 2019-02-28 | 2021-01-06 | 세메스 주식회사 | Gas supplying unit of substrate treating apparatus |
DE102019117479A1 (en) * | 2019-06-28 | 2020-12-31 | Aixtron Se | Flat component that can be used in a CVD reactor |
WO2022051079A1 (en) * | 2020-09-02 | 2022-03-10 | Applied Materials, Inc. | Showerhead design to control stray deposition |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6786175B2 (en) * | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
US20050133160A1 (en) * | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
US20050241766A1 (en) * | 2004-04-30 | 2005-11-03 | Rajinder Dhindsa | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
US20070187038A1 (en) * | 2006-02-13 | 2007-08-16 | Daxing Ren | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
Family Cites Families (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3783173A (en) | 1972-05-19 | 1974-01-01 | Us Army | Gasket-electrically conductive |
US4654754A (en) | 1982-11-02 | 1987-03-31 | Fairchild Weston Systems, Inc. | Thermal link |
US4595484A (en) | 1985-12-02 | 1986-06-17 | International Business Machines Corporation | Reactive ion etching apparatus |
KR880000215A (en) * | 1986-06-10 | 1988-03-24 | 나까므라 히사오 | Plasma treatment apparatus for sheet-like objects |
US4782893A (en) | 1986-09-15 | 1988-11-08 | Trique Concepts, Inc. | Electrically insulating thermally conductive pad for mounting electronic components |
US4960488A (en) | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
US4792378A (en) | 1987-12-15 | 1988-12-20 | Texas Instruments Incorporated | Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor |
US4820371A (en) | 1987-12-15 | 1989-04-11 | Texas Instruments Incorporated | Apertured ring for exhausting plasma reactor gases |
US6063233A (en) | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
WO1995002313A1 (en) | 1993-07-06 | 1995-01-19 | Kabushiki Kaisha Toshiba | Heat dissipating sheet |
CA2129073C (en) | 1993-09-10 | 2007-06-05 | John P. Kalinoski | Form-in-place emi gaskets |
DE4339786C5 (en) | 1993-11-18 | 2004-02-05 | Emi-Tec Elektronische Materialien Gmbh | Process for producing a heat dissipation arrangement |
US5545473A (en) | 1994-02-14 | 1996-08-13 | W. L. Gore & Associates, Inc. | Thermally conductive interface |
US5679457A (en) | 1995-05-19 | 1997-10-21 | The Bergquist Company | Thermally conductive interface for electronic devices |
US5534751A (en) | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US5932007A (en) * | 1996-06-04 | 1999-08-03 | General Signal Technology Corporation | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system |
JP3310171B2 (en) * | 1996-07-17 | 2002-07-29 | 松下電器産業株式会社 | Plasma processing equipment |
JP3480271B2 (en) | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | Shower head structure of heat treatment equipment |
US6096414A (en) | 1997-11-25 | 2000-08-01 | Parker-Hannifin Corporation | High dielectric strength thermal interface material |
US6131646A (en) | 1998-01-19 | 2000-10-17 | Trw Inc. | Heat conductive interface material |
US6220607B1 (en) | 1998-04-17 | 2001-04-24 | Applied Materials, Inc. | Thermally conductive conformal media |
US6073577A (en) | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
US6050216A (en) | 1998-08-21 | 2000-04-18 | M.E.C. Technology, Inc. | Showerhead electrode for plasma processing |
US6379491B1 (en) | 1998-10-30 | 2002-04-30 | Promos Technologies, Inc. | Plasma chamber with erosion resistive securement screws |
US6165612A (en) | 1999-05-14 | 2000-12-26 | The Bergquist Company | Thermally conductive interface layers |
US6200415B1 (en) * | 1999-06-30 | 2001-03-13 | Lam Research Corporation | Load controlled rapid assembly clamp ring |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6451157B1 (en) * | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6496373B1 (en) | 1999-11-04 | 2002-12-17 | Amerasia International Technology, Inc. | Compressible thermally-conductive interface |
US6343647B2 (en) | 2000-01-11 | 2002-02-05 | Thermax International, Ll.C. | Thermal joint and method of use |
US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6170432B1 (en) * | 2000-01-24 | 2001-01-09 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
US6475933B1 (en) | 2000-01-27 | 2002-11-05 | Northrop Grumman Corporation | Highly conductive elastomeric sheet |
JP3990867B2 (en) | 2000-01-31 | 2007-10-17 | キヤノン株式会社 | Deposited film forming apparatus and deposited film forming method |
JP2001244242A (en) * | 2000-02-29 | 2001-09-07 | Kobe Steel Ltd | Plasma treatment equipment |
PT1264126E (en) | 2000-03-06 | 2008-01-10 | Interface Solutions Inc | Gaskets with controlled flange surface adhesion properties |
US7220937B2 (en) | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
JP2002093777A (en) | 2000-07-11 | 2002-03-29 | Nisshinbo Ind Inc | Dry etching system |
US6412437B1 (en) | 2000-08-18 | 2002-07-02 | Micron Technology, Inc. | Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process |
US6769913B2 (en) | 2000-08-30 | 2004-08-03 | Nobel Biocare Ab | Impression cap |
US6872281B1 (en) | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
US6391787B1 (en) | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
US6651736B2 (en) | 2001-06-28 | 2003-11-25 | Intel Corporation | Short carbon fiber enhanced thermal grease |
US20030106644A1 (en) * | 2001-07-19 | 2003-06-12 | Sirkis Murray D. | Electrode apparatus and method for plasma processing |
JP4102873B2 (en) * | 2002-03-29 | 2008-06-18 | 東京エレクトロン株式会社 | Electrode plate for plasma processing apparatus and plasma processing apparatus |
JP3868341B2 (en) | 2002-04-22 | 2007-01-17 | 日清紡績株式会社 | Plasma etching electrode with excellent heat resistance and dry etching apparatus equipped with the same |
US7208192B2 (en) | 2002-05-31 | 2007-04-24 | Parker-Hannifin Corporation | Thermally or electrically-conductive form-in-place gap filter |
JP3714924B2 (en) | 2002-07-11 | 2005-11-09 | 東京エレクトロン株式会社 | Plasma processing equipment |
US7730547B2 (en) | 2003-01-23 | 2010-06-01 | William Marsh Rice University | Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices |
US7153388B2 (en) | 2003-03-31 | 2006-12-26 | Lam Research Corporation | Chamber for high-pressure wafer processing and method for making the same |
US7205050B2 (en) | 2003-06-09 | 2007-04-17 | Permatex, Inc. | Low shear adhesion RTV silicone |
JP2005019606A (en) | 2003-06-25 | 2005-01-20 | Anelva Corp | Device for fixing gas shower head or target plate to electrode in plasma treatment apparatus |
US7137444B2 (en) | 2003-09-08 | 2006-11-21 | Pacific Rubber & Packing, Inc. | Heat-transfer interface device between a source of heat and a heat-receiving object |
IL160145A0 (en) | 2004-01-29 | 2004-06-20 | Univ Ben Gurion | Method for the preparation of dispersions of carbon nanotubes |
CN1669796B (en) * | 2004-02-23 | 2012-05-23 | 周星工程股份有限公司 | Device for manufacturing display basic board and blow head combination assemblaging therein |
US7712434B2 (en) | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
KR100628888B1 (en) * | 2004-12-27 | 2006-09-26 | 삼성전자주식회사 | Apparatus for controlling temperature of a showerhead and apparatus for forming a layer having the same |
US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
KR100745971B1 (en) * | 2005-04-08 | 2007-08-02 | 정경철 | 7Step pinhole lens set for recovering eye sight |
JP4506557B2 (en) | 2005-05-18 | 2010-07-21 | 株式会社島津製作所 | Shower head and surface wave excitation plasma processing apparatus |
KR100629358B1 (en) | 2005-05-24 | 2006-10-02 | 삼성전자주식회사 | Shower head |
JP4819411B2 (en) * | 2005-06-22 | 2011-11-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2007067150A (en) * | 2005-08-31 | 2007-03-15 | Shin Etsu Chem Co Ltd | Shower plate for plasma treatment apparatus and plasma treatment apparatus |
US8679252B2 (en) | 2005-09-23 | 2014-03-25 | Lam Research Corporation | Actively heated aluminum baffle component having improved particle performance and methods of use and manufacture thereof |
JP4777790B2 (en) | 2005-09-29 | 2011-09-21 | 東京エレクトロン株式会社 | Structure for plasma processing chamber, plasma processing chamber, and plasma processing apparatus |
US20080081114A1 (en) | 2006-10-03 | 2008-04-03 | Novellus Systems, Inc. | Apparatus and method for delivering uniform fluid flow in a chemical deposition system |
US7854820B2 (en) | 2006-10-16 | 2010-12-21 | Lam Research Corporation | Upper electrode backing member with particle reducing features |
JP2008103589A (en) | 2006-10-20 | 2008-05-01 | Tokyo Cathode Laboratory Co Ltd | Shower head for semiconductor processing apparatus and front-side electrode plate used in shower head of semiconductor processing apparatus |
US7806413B2 (en) | 2006-11-08 | 2010-10-05 | Federal-Mogul Corporation | Static gasket |
-
2007
- 2007-10-12 US US11/871,586 patent/US8152954B2/en active Active
-
2008
- 2008-09-09 WO PCT/US2008/075676 patent/WO2009048703A1/en active Application Filing
- 2008-09-09 CN CN200880121177.XA patent/CN101896637B/en active Active
- 2008-09-09 CN CN201210273737.1A patent/CN102766855B/en active Active
- 2008-09-09 KR KR1020107009956A patent/KR101573947B1/en active IP Right Review Request
- 2008-09-09 JP JP2010528920A patent/JP5450427B2/en active Active
- 2008-09-10 TW TW097134776A patent/TWI380392B/en active
-
2012
- 2012-03-01 US US13/409,527 patent/US8268117B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6786175B2 (en) * | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
US20050133160A1 (en) * | 2003-12-23 | 2005-06-23 | Kennedy William S. | Showerhead electrode assembly for plasma processing apparatuses |
US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
US20050241766A1 (en) * | 2004-04-30 | 2005-11-03 | Rajinder Dhindsa | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
US20070187038A1 (en) * | 2006-02-13 | 2007-08-16 | Daxing Ren | Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch |
Also Published As
Publication number | Publication date |
---|---|
US8268117B2 (en) | 2012-09-18 |
TWI380392B (en) | 2012-12-21 |
JP2011501412A (en) | 2011-01-06 |
KR101573947B1 (en) | 2015-12-02 |
CN101896637A (en) | 2010-11-24 |
US20090095424A1 (en) | 2009-04-16 |
TW200933784A (en) | 2009-08-01 |
CN101896637B (en) | 2012-10-03 |
JP5450427B2 (en) | 2014-03-26 |
US20120160941A1 (en) | 2012-06-28 |
US8152954B2 (en) | 2012-04-10 |
CN102766855B (en) | 2015-05-20 |
KR20100089067A (en) | 2010-08-11 |
CN102766855A (en) | 2012-11-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8152954B2 (en) | Showerhead electrode assemblies and plasma processing chambers incorporating the same | |
US8187414B2 (en) | Anchoring inserts, electrode assemblies, and plasma processing chambers | |
US8187413B2 (en) | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket | |
US8216418B2 (en) | Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings | |
US8161906B2 (en) | Clamped showerhead electrode assembly | |
US8221582B2 (en) | Clamped monolithic showerhead electrode | |
US8272346B2 (en) | Gasket with positioning feature for clamped monolithic showerhead electrode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880121177.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08799345 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010528920 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20107009956 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08799345 Country of ref document: EP Kind code of ref document: A1 |