WO2009054883A4 - Silicon-based optical modulator for analog applications - Google Patents

Silicon-based optical modulator for analog applications Download PDF

Info

Publication number
WO2009054883A4
WO2009054883A4 PCT/US2008/011560 US2008011560W WO2009054883A4 WO 2009054883 A4 WO2009054883 A4 WO 2009054883A4 US 2008011560 W US2008011560 W US 2008011560W WO 2009054883 A4 WO2009054883 A4 WO 2009054883A4
Authority
WO
WIPO (PCT)
Prior art keywords
optical
waveguiding
silicon
input
siscap
Prior art date
Application number
PCT/US2008/011560
Other languages
French (fr)
Other versions
WO2009054883A1 (en
Inventor
Kapendu Shastri
Prakash Gothoskar
Vipulkumar Patel
David Piede
Mark Webster
Original Assignee
Lightwire Inc
Kapendu Shastri
Prakash Gothoskar
Vipulkumar Patel
David Piede
Mark Webster
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lightwire Inc, Kapendu Shastri, Prakash Gothoskar, Vipulkumar Patel, David Piede, Mark Webster filed Critical Lightwire Inc
Priority to CN2008801119078A priority Critical patent/CN101960345B/en
Publication of WO2009054883A1 publication Critical patent/WO2009054883A1/en
Publication of WO2009054883A4 publication Critical patent/WO2009054883A4/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2255—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure controlled by a high-frequency electromagnetic component in an electric waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index
    • G02F1/0152—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction modulating the refractive index using free carrier effects, e.g. plasma effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2257—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure the optical waveguides being made of semiconducting material

Abstract

A silicon-insulator-silicon capacitive (SISCAP) optical modulator is configured to provide analog operation for applications which previously required the use of relatively large, power-consuming and expensive lithium niobate devices. An MZI- based SISCAP modulator (preferably a balanced arrangement with a SISCAP device on each arm) is responsive to an incoming RF electrical signal and is biased in a region where the capacitance of the device is essentially constant and the transform function of the MZI is linear.

Claims

AMENDED CLAIMS received by the International Bureau on 1st June 2009 (01.06.09)
1. An analog optical modulator formed within an SOI structure including a silicon substrate, an overlying oxide layer and a relatively thin silicon surface waveguiding layer, the analog optical modulator comprising an optical interferometer formed within the relatively thin silicon surface waveguiding layer, the interferometer including an input optical waveguide, a pair of parallel waveguiding arms and an output optical waveguide, with an input Y-splitter disposed between the input optical waveguide and the input to the pair of parallel waveguiding arms and an output Y-combiner disposed between the output of the pair of parallel waveguiding arms and the output optical waveguide, a continuous wave (CW) optical input signal coupled into the input optical waveguide; and at least one silicon-insulator-silicon capacitance (SISCAP) optical waveguiding device disposed at least one of said pair of parallel waveguiding arms, the SISCAP optical waveguiding device comprising a first silicon region within the relatively thin silicon surface waveguiding layer doped to exhibit a first conductivity type; a second silicon region disposed to overlap, in part, the first silicon region, the second silicon region doped to exhibit a second, opposite conductivity type; a relatively thin dielectric layer disposed in the overlap area between said first and second doped silicon regions, the combination of said first and second doped silicon regions with the interposed relatively thin dielectric layer defining the active region of the electro-optic device; a voltage bias source applied across the at least one SISCAP optical waveguiding device to create a predetermined, constant capacitance value across said at least one SISCAP optical waveguiding device, forming a linear operating region for the analog optical modulator; and an input RF electrical signal coupled to the second silicon region of the at least one SISCAP device, wherein the application of said input RF electrical signal, in combination with the voltage bias, modifies the phase of an optical signal passing therethrough to create a modulated analog optical output signal along the optical output waveguide which replicates the input RF electrical signal,
2. The modulator as defined in claim 1 wherein the at least one SISCAP optical waveguiding device comprises a pair of SISCAP optical waveguiding devices, with a first device of said pair disposed along the first optical waveguiding arm of the interferometer and a second device of said pair disposed along the second optical waveguiding arm of said interferometer.
3. The modulator as defined in claim 2 wherein the pair of SISCAP optical waveguiding devices are cross-coupled into a common mode configuration, the input RP signal applied to a cross-coupled connection of the second silicon region of one SISCAP device with the first silicon of the remaining SISCAP device.
4. The modulator as defined in claim 3 wherein the voltage bias is maintained at an essentially zero voltage level.
5. The modulator as defined in claim 4 wherein the modulator further comprises a low pass electrical filter coupled across the first SISCAP optical waveguiding device to substantiate operation with a zero bias voltage.
6. The modulator as defined in claim 5 wherein the low pass electrical filter is integrated within the same SOI structure as the modulator.
7. The modulator as defined in claim 3 wherein the voltage bias is provided by a constant DC voltage source coupled to the remaining cross-coupled pair of regions to maintain an essentially constant DC bias voltage.
8. An integrated optical communication system formed within an SOI structure comprising a silicon substrate, an overlying insulating layer and a surface silicon waveguiding layer, the integrated optical communication system comprising an analog optical modulator including an optical interferometer formed within the relatively thin silicon surface waveguiding layer, the interferometer including an input optical waveguide, a pair of parallel waveguiding arms and an output optical waveguide, with an input Y-splitter disposed between the input optical waveguide and the input to the pair of parallel waveguiding arms and an output Y-combiner disposed between the output of the pair of parallel waveguiding arms and the output optical waveguide, a continuous wave (CW) optical input signal coupled into the input optical waveguide; and at least one silicon-insulator-silicon capacitance (SISCAP) optical waveguiding device disposed at least one of said pair of parallel waveguiding arms, the SISCAP optical waveguiding device comprising a first silicon region within the relatively thin silicon surface waveguiding layer doped to exhibit a first conductivity type;
19 a second silicon region disposed to overlap, in part, the first silicon region, the second silicon region doped to exhibit a second, opposite conductivity type; a relatively thin dielectric layer disposed in the overlap area between said first and second doped silicon regions, the combination of said first and second doped silicon regions with the interposed relatively thin dielectric layer defining the active region of the electro-optic device; a voltage bias source applied across the at least one SISCAP optical waveguiding device to create a predetermined, constant capacitance value across said at least one SISCAP optical waveguiding device, forming a linear operating region for the analog optical modulator; and an input RF electrical signal coupled to the second silicon region of the at least one SISCAP device, wherein the application of said input RF electrical signal, in combination with the voltage bias, modifies the phase of an optical signal passing therethrough to create a modulated analog optical output signal along the optical output waveguide which replicates the input RF electrical signal; and at least one optical component integrated within the SOI structure with the analog modulator; and at least one electrical component integrated within the SOI structure with the analog modulator.
9. The system as defined in claim 8 wherein the at least one optical component comprises a photodetecting device,
10. The system as defined in claim 9 wherein the at least one optical component further comprises an out-coupling waveguide disposed between a selected portion of the interferometer and the photodetecting device such that the photodetecting device provides an electrical signal representative of the performance of said interferometer.
11. The system as defined in claim 8 wherein the at least one electrical component comprises a transimpedance amplifier coupled to the input of the analog optical modulator.
12. A silicon-based arrangement integrated within a single SOI structure, comprising a silicon substrate, an overlying insulating layer and a surface silicon layer, the arrangement comprising
20 a plurality of N analog optical modulators interconnected in a predetermined array configuration, each analog modulator comprising: an optical interferometer formed within the relatively thin silicon surface waveguiding layer, the interferometer including an input optical waveguide, a pair of parallel waveguiding arms and an output optical waveguide, with an input Y-splitter disposed between the input optical waveguide and the input to the pair of parallel waveguiding arms and an output Y-combiner disposed between the output of the pair of parallel waveguiding arms and the output optical waveguide, a continuous wave (CW) optical input signal coupled into the input optical waveguide; and at least one silicon-insulator-silicon capacitance (SISCAP) optical waveguiding device disposed at least one of said pair of parallel waveguiding arms, the SISCAP optical waveguiding device comprising a First silicon region within the relatively thin silicon surface waveguiding layer doped to exhibit a first conductivity type; a second silicon region disposed to overlap, in part, the first silicon region, the second silicon region doped to exhibit a second, opposite conductivity type; a relatively thin dielectric layer disposed in the overlap area between said first and second doped silicon regions, the combination of said first and second doped silicon regions with the interposed relatively thin dielectric layer defining the active region of the electro-optic device; a voltage bias source applied across the at least one SISCAP optical waveguiding device to create a predetermined, constant capacitance value across said at least one SISCAP optical waveguiding device, forming a linear operating region for the analog optical modulator; and an input RF electrical signal coupled to the second silicon region of the at least one SISCAP device, wherein the application of said input RF electrical signal, in combination with the voltage bias, modifies the phase of an optical signal passing therethrough to create a modulated analog optical output signal along the optical output waveguide which replicates the input RF electrical signal; and
21 a plurality of optical waveguides, formed within the silicon surface layer and arranged to form connections between the separate analog optical modulators of the plurality of N analog optical modulators,
13. The arrangement as defined in claim 12 wherein a select group of optical waveguides within the plurality of optical waveguides are disposed to create optical signal splitters between certain ones of the plurality of N analog optical modulators.
14. The arrangement as defined in claim 12 wherein a select group of optical waveguides within the plurality of optical waveguides are disposed to create optical signal combiners between certain ones of the plurality of N analog optical modulators. v
22
PCT/US2008/011560 2007-10-19 2008-10-08 Silicon-based optical modulator for analog applications WO2009054883A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008801119078A CN101960345B (en) 2007-10-19 2008-10-08 Silicon-based optical modulator for analog applications

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US99978407P 2007-10-19 2007-10-19
US60/999,784 2007-10-19
US18897508P 2008-08-13 2008-08-13
US61/188,975 2008-08-13
US12/287,366 2008-10-08
US12/287,366 US7657130B2 (en) 2007-10-19 2008-10-08 Silicon-based optical modulator for analog applications

Publications (2)

Publication Number Publication Date
WO2009054883A1 WO2009054883A1 (en) 2009-04-30
WO2009054883A4 true WO2009054883A4 (en) 2009-07-16

Family

ID=40563567

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/011560 WO2009054883A1 (en) 2007-10-19 2008-10-08 Silicon-based optical modulator for analog applications

Country Status (3)

Country Link
US (1) US7657130B2 (en)
CN (1) CN101960345B (en)
WO (1) WO2009054883A1 (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7796842B2 (en) * 2006-10-07 2010-09-14 Lightwire, Inc. AC-coupled differential drive circuit for opto-electronic modulators
US8520984B2 (en) * 2009-06-12 2013-08-27 Cisco Technology, Inc. Silicon-based optical modulator with improved efficiency and chirp control
US8643929B2 (en) 2010-01-12 2014-02-04 Alcatel Lucent Nested Mach-Zehnder modulator
US8363986B2 (en) * 2010-03-10 2013-01-29 Mark Webster Dopant profile control for high speed silicon-based optical modulators
US8300990B2 (en) * 2010-04-14 2012-10-30 Oracle America, Inc. Slotted optical waveguide with electro-optic material
US8705972B2 (en) * 2010-05-11 2014-04-22 Hewlett-Packard Development Company, L.P. Energy-efficient and fault-tolerant resonator-based modulation and wavelength division multiplexing systems
JP5300807B2 (en) * 2010-09-03 2013-09-25 株式会社東芝 Light modulation element
US20120321240A1 (en) * 2011-04-29 2012-12-20 Luca Alloatti Electro-optical device and method for processing an optical signal
US20140169737A1 (en) * 2012-12-17 2014-06-19 Oracle International Corporation Transceiver with self-registered wavelengths
US9036953B2 (en) * 2013-03-04 2015-05-19 Rwth Aachen University Electro-optical modulator based on carrier depletion or carrier accumulation in semiconductors with advanced electrode configuration
US9893679B2 (en) * 2013-03-15 2018-02-13 Lawrence Livermore National Security, Llc High frequency modulation circuits based on photoconductive wide bandgap switches
CN103268001B (en) * 2013-05-31 2015-03-25 东南大学 Asymmetrical phase-adjustable Mach-Zehnder interferometer and preparation method thereof
FR3011121A1 (en) * 2013-09-26 2015-03-27 St Microelectronics Sa INTEGRATED CIRCUIT CHIP ASSEMBLY COMPRISING AN OVERVOLTAGE PROTECTION COMPONENT
WO2015116541A1 (en) 2014-01-29 2015-08-06 Huawei Technologies Co., Ltd. Interdigitated optical modulator
DE102014119195B4 (en) 2014-12-19 2016-10-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Electro-optical modulator
EP3333619B1 (en) * 2015-08-04 2020-04-15 Nippon Telegraph And Telephone Corporation Optical modulator
US9891450B2 (en) 2015-09-16 2018-02-13 Stmicroelectronics (Crolles 2) Sas Integrated electro-optic modulator
FR3047811B1 (en) 2016-02-12 2018-03-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives MODULATOR OF PROPAGATION LOSSES AND OF THE PROPAGATION INDEX OF A GUIDE OPTICAL SIGNAL
TW201734581A (en) * 2016-03-28 2017-10-01 源傑科技股份有限公司 Light modulator
GB2563278B (en) 2017-06-09 2022-10-26 Univ Southampton Optoelectronic device and method of manufacturing thereof
US10162200B1 (en) * 2017-06-19 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Electro-optic phase modulator and method of manufacturing the same
GB2580264B (en) * 2017-08-22 2022-11-30 Rockley Photonics Ltd Optical modulator and method of fabricating an optical modulator
US10295847B1 (en) 2017-11-21 2019-05-21 Nokia Solutions And Networks Oy Dual-drive push-pull optical modulator with electrical common-mode suppression
US10330962B1 (en) 2018-04-17 2019-06-25 Ciena Corporation Patterned accumulation mode capacitive phase shifter
CN108896838B (en) * 2018-06-12 2021-06-18 昆明理工大学 Integrated optical waveguide electric field sensor and electric field measuring system using same
US10642077B1 (en) 2018-11-20 2020-05-05 Elenion Technologies, Llc Lateral MOSCAP phase adjuster
WO2021007806A1 (en) * 2019-07-17 2021-01-21 中国科学院半导体研究所 Photonic chip and preparation method therefor
CN111176053B (en) * 2020-02-19 2021-07-27 上海交通大学 Monolithic integrated optical analog-digital conversion system based on lithium niobate-silicon wafer and preparation method
US11874582B2 (en) 2020-02-19 2024-01-16 Shanghai Jiao Tong University Monolithically integrated optical analog-to-digital conversion system based on lithium niobate-silicon wafer and method for manufacturing the same

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4709978A (en) * 1986-02-21 1987-12-01 Bell Communications Research, Inc. Mach-Zehnder integrated optical modulator
US5321543A (en) * 1992-10-20 1994-06-14 General Instrument Corporation Apparatus and method for linearizing an external optical modulator
US5337398A (en) * 1992-11-30 1994-08-09 At&T Bell Laboratories Single in-line optical package
US5347601A (en) * 1993-03-29 1994-09-13 United Technologies Corporation Integrated optical receiver/transmitter
US5838484A (en) * 1996-08-19 1998-11-17 Lucent Technologies Inc. Micromechanical optical modulator with linear operating characteristic
US6091864A (en) * 1997-04-10 2000-07-18 Ortel Corporation Linear optical modulator for providing chirp-free optical signals
US6310902B1 (en) * 1998-04-29 2001-10-30 Agere Systems Optoelectronics Guardian Corp. Modulator for analog applications
US6490068B1 (en) * 1999-04-01 2002-12-03 Trw Inc. Linear analog optical communication system with two transmitted beams and phase modulation
DE60132056T2 (en) * 2000-03-15 2008-12-18 Sumitomo Osaka Cement Co., Ltd. OPTICAL WAVE MODULATOR WITH OUTDOOR LIGHT MONITOR
JP2002182172A (en) * 2000-10-03 2002-06-26 Fujitsu Ltd Optical modulator
US6766070B2 (en) * 2001-04-27 2004-07-20 The United States Of America As Represented By The Secretary Of The Navy High power fiber optic modulator system and method
WO2003023473A1 (en) * 2001-09-10 2003-03-20 California Institute Of Technology Structure and method for coupling light between dissimilar waveguides
GB2384570B (en) * 2002-01-19 2005-06-29 Marconi Optical Components Ltd Modulators
JP3764686B2 (en) * 2002-02-07 2006-04-12 日本電信電話株式会社 Optical transmission circuit
US7006719B2 (en) * 2002-03-08 2006-02-28 Infinera Corporation In-wafer testing of integrated optical components in photonic integrated circuits (PICs)
US6970279B2 (en) * 2002-05-13 2005-11-29 Bae Systems Information And Electronic Systems Integration Inc. Optical beam modulating system implementing the use of continuous tunable QWIMs
US6753992B2 (en) * 2002-06-14 2004-06-22 Pacific Wave Industries, Inc. Method for suppressing distortion in mach-zehnder optical modulators with a chirped or variable operating wavelength
US6895157B2 (en) * 2002-07-29 2005-05-17 Intel Corporation Thermal optical switch apparatus and methods with enhanced thermal isolation
US6845198B2 (en) * 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
US6933583B2 (en) * 2003-04-10 2005-08-23 Northrop Grumman Corporation In-phase RF drive of Mach-Zehnder modulator push-pull electrodes by using coupled quantum well optical active region
CA2523298C (en) * 2003-05-08 2013-10-01 Sioptical, Inc. High speed, silicon-based electro-optic modulator
US6954558B2 (en) * 2003-06-24 2005-10-11 Intel Corporation Method and apparatus for phase shifting an optical beam in an optical device
KR100605372B1 (en) * 2003-09-29 2006-07-28 한국전자통신연구원 Electro-absorption optical modulator having multiple quantum well
KR101115735B1 (en) 2004-02-26 2012-03-06 시옵티컬 인코포레이티드 Active manipulation of light in a silicon-on-insulator SOI structure
US6943931B1 (en) * 2004-06-02 2005-09-13 Benjamin Dingel Ultra-high linearized optical modulator
US7394948B1 (en) * 2004-06-07 2008-07-01 Kotura, Inc. High speed optical phase modulator
US7218799B2 (en) * 2005-03-29 2007-05-15 Analog Devices, Inc. External optical modulator
US7400788B2 (en) * 2005-07-15 2008-07-15 The United States Of America As Represented By The Secretary Of Air Force Linearized optical modulator having a plurality of coupling functions
US7412144B2 (en) * 2005-07-22 2008-08-12 The United States Of America As Represented By The Secretary Of The Army Photonic crystal-based optical waveguide modulator
US7257283B1 (en) * 2006-06-30 2007-08-14 Intel Corporation Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array
US7421168B1 (en) * 2007-07-02 2008-09-02 Northrop Grumman Systems Corporation Integrated optical channelizer

Also Published As

Publication number Publication date
US20090103850A1 (en) 2009-04-23
CN101960345B (en) 2013-01-02
US7657130B2 (en) 2010-02-02
WO2009054883A1 (en) 2009-04-30
CN101960345A (en) 2011-01-26

Similar Documents

Publication Publication Date Title
WO2009054883A4 (en) Silicon-based optical modulator for analog applications
CA2764643C (en) Silicon-based optical modulator with improved efficiency and chirp control
EP2038702B1 (en) Optical modulator
US10197884B2 (en) Sub-volt drive 100 GHz bandwidth electro-optic modulator
US7039258B2 (en) Distributed amplifier optical modulators
US8923660B2 (en) System and method for an optical phase shifter
US7697793B2 (en) Silicon modulator offset tuning arrangement
US10018888B2 (en) Advanced techniques for improving high-efficiency optical modulators
CN1434929A (en) Optical modulator with pre-determined frequency chirp
EP2027497A2 (en) Silicon modulator offset tuning arrangement
US20220334419A1 (en) Coplanar waveguide wire electrode structure and modulator
US20210223657A1 (en) Active photonic networks on integrated lithium niobate platforms
WO2012035319A1 (en) Electro-optic Devices
Pal et al. Junction-less optical phase shifter loaded silicon Mach–Zehnder modulator
CN111290191A (en) Directional coupler and optical switch based on silicon nitride platform
Su et al. Scalability of large-scale photonic integrated circuits
Sun et al. Limitation factor analysis for silicon-on-insulator waveguide Mach–Zehnder interference-based electro-optic switch
CN114583420A (en) Phase shifter and manufacturing method thereof, semiconductor device and optical communication system
US20130188969A1 (en) Method and system for multiple resonance interferometer
JPH0667130A (en) Light control element
JP2002122834A (en) Optical waveguide element
JPH04328720A (en) Waveguide type optical device
US20050147351A1 (en) Optical modulator
CN108287417B (en) Wide-spectrum optical power beam splitter and power distribution method
JP2023034026A (en) Optical device and optical communication apparatus

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880111907.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08841339

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 3073/DELNP/2010

Country of ref document: IN

122 Ep: pct application non-entry in european phase

Ref document number: 08841339

Country of ref document: EP

Kind code of ref document: A1