WO2009057075A3 - Optoelectronic device with light directing arrangement and method of forming the arrangement - Google Patents

Optoelectronic device with light directing arrangement and method of forming the arrangement Download PDF

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Publication number
WO2009057075A3
WO2009057075A3 PCT/IB2008/054534 IB2008054534W WO2009057075A3 WO 2009057075 A3 WO2009057075 A3 WO 2009057075A3 IB 2008054534 W IB2008054534 W IB 2008054534W WO 2009057075 A3 WO2009057075 A3 WO 2009057075A3
Authority
WO
WIPO (PCT)
Prior art keywords
arrangement
optoelectronic device
forming
light directing
directing arrangement
Prior art date
Application number
PCT/IB2008/054534
Other languages
French (fr)
Other versions
WO2009057075A2 (en
Inventor
Monuko Du Plessis
Ray Frederick Greyvenstein
Alfons Willi Bogalecki
Original Assignee
Insiava (Pty) Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Insiava (Pty) Ltd filed Critical Insiava (Pty) Ltd
Priority to EP08846163.7A priority Critical patent/EP2218113B1/en
Priority to US12/740,597 priority patent/US8729582B2/en
Priority to CN2008801235261A priority patent/CN101911320B/en
Priority to JP2010531626A priority patent/JP5550558B2/en
Publication of WO2009057075A2 publication Critical patent/WO2009057075A2/en
Publication of WO2009057075A3 publication Critical patent/WO2009057075A3/en
Priority to ZA2010/02944A priority patent/ZA201002944B/en
Priority to US14/278,181 priority patent/US8969112B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of group IV of the periodic system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

An optoelectronic device (20) comprises a body ( 14) of an indirect bandgap semiconductor material having a surface (16) and a photon active region (12) on one side of the surface. A fight directing arrangement (22) is formed integrally with the body on an opposite side of the surface.
PCT/IB2008/054534 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement WO2009057075A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP08846163.7A EP2218113B1 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
US12/740,597 US8729582B2 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
CN2008801235261A CN101911320B (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
JP2010531626A JP5550558B2 (en) 2007-11-01 2008-10-31 Optoelectronic device having a light guiding mechanism and method for forming the mechanism
ZA2010/02944A ZA201002944B (en) 2007-11-01 2010-04-28 Optoelectronic device with light directing arrangement and method of forming the arrangement
US14/278,181 US8969112B2 (en) 2007-11-01 2014-05-15 Optoelectronic device with light directing arrangement and method of forming the arrangement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200709436 2007-11-01
ZA2007/09436 2007-11-01

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/740,597 A-371-Of-International US8729582B2 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement
US14/278,181 Division US8969112B2 (en) 2007-11-01 2014-05-15 Optoelectronic device with light directing arrangement and method of forming the arrangement

Publications (2)

Publication Number Publication Date
WO2009057075A2 WO2009057075A2 (en) 2009-05-07
WO2009057075A3 true WO2009057075A3 (en) 2010-03-18

Family

ID=40591580

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2008/054534 WO2009057075A2 (en) 2007-11-01 2008-10-31 Optoelectronic device with light directing arrangement and method of forming the arrangement

Country Status (7)

Country Link
US (2) US8729582B2 (en)
EP (1) EP2218113B1 (en)
JP (1) JP5550558B2 (en)
CN (1) CN101911320B (en)
TW (1) TWI467789B (en)
WO (1) WO2009057075A2 (en)
ZA (1) ZA201002944B (en)

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US8759845B2 (en) * 2008-01-21 2014-06-24 Insiava (Pty) Limited Semiconductor light emitting device utilising punch-through effects
WO2009095886A2 (en) * 2008-02-01 2009-08-06 Insiava (Pty) Limited Semiconductor light emitting device comprising heterojunction
US8237832B2 (en) * 2008-05-30 2012-08-07 Omnivision Technologies, Inc. Image sensor with focusing interconnections
CN102292834A (en) 2008-12-15 2011-12-21 因西亚瓦(控股)有限公司 Silicon light emitting device utilising reach-through effects
EP2526571B1 (en) 2010-01-22 2019-05-01 Insiava (Pty) Limited Silicon light emitting device and method of fabricating same
US9515227B2 (en) 2011-09-16 2016-12-06 Insiava (Pty) Limited Near infrared light source in bulk silicon
DE102012107794B4 (en) 2012-08-23 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic device
JP2016133510A (en) * 2015-01-16 2016-07-25 パーソナル ジェノミクス タイワン インコーポレイテッドＰｅｒｓｏｎａｌ Ｇｅｎｏｍｉｃｓ Ｔａｉｗａｎ，Ｉｎｃ． Optical sensor having light guiding function, and manufacturing method of the same
KR102385941B1 (en) * 2015-06-15 2022-04-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light Emitting Device Package
KR20210023459A (en) * 2019-08-23 2021-03-04 에스케이하이닉스 주식회사 Image sensing device

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Also Published As

Publication number Publication date
ZA201002944B (en) 2010-12-29
CN101911320B (en) 2012-11-21
US8969112B2 (en) 2015-03-03
EP2218113A2 (en) 2010-08-18
WO2009057075A2 (en) 2009-05-07
US20140248728A1 (en) 2014-09-04
CN101911320A (en) 2010-12-08
TWI467789B (en) 2015-01-01
TW200943569A (en) 2009-10-16
EP2218113B1 (en) 2016-04-27
JP2011503842A (en) 2011-01-27
JP5550558B2 (en) 2014-07-16
US8729582B2 (en) 2014-05-20
US20110042701A1 (en) 2011-02-24

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