WO2009091484A1 - Light guide array for an image sensor - Google Patents
Light guide array for an image sensor Download PDFInfo
- Publication number
- WO2009091484A1 WO2009091484A1 PCT/US2008/088077 US2008088077W WO2009091484A1 WO 2009091484 A1 WO2009091484 A1 WO 2009091484A1 US 2008088077 W US2008088077 W US 2008088077W WO 2009091484 A1 WO2009091484 A1 WO 2009091484A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light guide
- pixel
- film
- light
- forming
- Prior art date
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000012212 insulator Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 149
- 150000004767 nitrides Chemical class 0.000 description 38
- 230000005540 biological transmission Effects 0.000 description 25
- 239000010410 layer Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000010936 titanium Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 239000011295 pitch Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 229910001413 alkali metal ion Inorganic materials 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000001045 blue dye Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
Description
Claims
Priority Applications (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112008003468T DE112008003468T5 (en) | 2007-12-28 | 2008-12-22 | Optical fiber arrangement for an image sensor |
US12/810,998 US20100283112A1 (en) | 2007-12-28 | 2008-12-22 | Light Guide Array for An Image Sensor |
JP2010540848A JP6079978B2 (en) | 2007-12-28 | 2008-12-22 | Image sensor pixel manufacturing method and image sensor |
GB1012706.6A GB2469247B (en) | 2007-12-28 | 2008-12-22 | Light guide array for an image sensor |
ES201090046A ES2422869B1 (en) | 2007-12-28 | 2008-12-22 | Image sensor pixel and method of making an image sensor pixel. |
MX2010007203A MX2010007203A (en) | 2007-12-28 | 2008-12-22 | Light guide array for an image sensor. |
CN200880123359.0A CN101971339B (en) | 2007-12-28 | 2008-12-22 | Light guide array for an image sensor |
BRPI0822173A BRPI0822173A8 (en) | 2007-12-28 | 2008-12-22 | light guide arrangement for an image sensor |
US12/806,192 US20110031381A1 (en) | 2007-12-28 | 2009-07-02 | Light guide array for an image sensor |
US12/824,837 US8455811B2 (en) | 2007-12-28 | 2010-06-28 | Light guide array for an image sensor |
US12/829,513 US8502130B2 (en) | 2008-12-22 | 2010-07-02 | Light guide array for an image sensor |
US12/894,283 US8299511B2 (en) | 2007-12-28 | 2010-09-30 | Light guide array for an image sensor |
US13/649,137 US20130034927A1 (en) | 2007-12-28 | 2012-10-11 | Light guide array for an image sensor |
US14/132,027 US20140117208A1 (en) | 2007-12-28 | 2013-12-18 | Light guide array for an image sensor |
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US945407P | 2007-12-28 | 2007-12-28 | |
US61/009,454 | 2007-12-28 | ||
US6277308P | 2008-01-28 | 2008-01-28 | |
US61/062,773 | 2008-01-28 | ||
US6330108P | 2008-02-01 | 2008-02-01 | |
US61/063,301 | 2008-02-01 | ||
US6934408P | 2008-03-14 | 2008-03-14 | |
US61/069,344 | 2008-03-14 | ||
US12/218,749 | 2008-07-16 | ||
US12/218,749 US7816641B2 (en) | 2007-12-28 | 2008-07-16 | Light guide array for an image sensor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/218,749 Continuation-In-Part US7816641B2 (en) | 2007-12-28 | 2008-07-16 | Light guide array for an image sensor |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/810,998 A-371-Of-International US20100283112A1 (en) | 2007-12-28 | 2008-12-22 | Light Guide Array for An Image Sensor |
US12/824,837 Continuation-In-Part US8455811B2 (en) | 2007-12-28 | 2010-06-28 | Light guide array for an image sensor |
US12/894,283 Continuation US8299511B2 (en) | 2007-12-28 | 2010-09-30 | Light guide array for an image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009091484A1 true WO2009091484A1 (en) | 2009-07-23 |
Family
ID=40796956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/088077 WO2009091484A1 (en) | 2007-12-28 | 2008-12-22 | Light guide array for an image sensor |
Country Status (12)
Country | Link |
---|---|
US (6) | US7816641B2 (en) |
JP (1) | JP6079978B2 (en) |
CN (1) | CN101971339B (en) |
BR (1) | BRPI0822173A8 (en) |
DE (1) | DE112008003468T5 (en) |
ES (2) | ES2422869B1 (en) |
GB (9) | GB2487010B (en) |
HK (4) | HK1171566A1 (en) |
MX (1) | MX2010007203A (en) |
SG (1) | SG187382A1 (en) |
TW (3) | TWI497705B (en) |
WO (1) | WO2009091484A1 (en) |
Cited By (6)
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CN102064228A (en) * | 2009-09-22 | 2011-05-18 | 英特赛尔美国股份有限公司 | Photodiode and method for manufacturing the same |
CN102549750A (en) * | 2009-11-05 | 2012-07-04 | 郑苍隆 | Optimized light guide array for an image sensor |
JP2012182426A (en) * | 2011-02-09 | 2012-09-20 | Canon Inc | Solid state image pickup device, image pickup system using solid state image pickup device and solis state image pickup device manufacturing method |
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US9030587B2 (en) | 2012-05-25 | 2015-05-12 | Canon Kabushiki Kaisha | Solid-state image sensor with light-guiding portion |
US9941325B2 (en) | 2015-07-13 | 2018-04-10 | Canon Kabushiki Kaisha | Method of manufacturing solid-state image sensor |
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WO2008093830A1 (en) * | 2007-02-02 | 2008-08-07 | Panasonic Corporation | Imaging device, method of producing the imaging device, and portable terminal device |
US7816641B2 (en) * | 2007-12-28 | 2010-10-19 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
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US10170516B2 (en) * | 2014-07-23 | 2019-01-01 | Visera Technologies Company Limited | Image sensing device and method for fabricating the same |
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US10488639B2 (en) * | 2015-10-08 | 2019-11-26 | Visera Technologies Company Limited | Detection device for specimens |
US9778191B2 (en) * | 2016-02-05 | 2017-10-03 | Personal Genomics, Inc. | Optical sensing module |
JP6744748B2 (en) | 2016-04-06 | 2020-08-19 | キヤノン株式会社 | Solid-state imaging device and manufacturing method thereof |
JP6465839B2 (en) * | 2016-07-06 | 2019-02-06 | キヤノン株式会社 | Photoelectric conversion device, imaging system, moving body, and method of manufacturing photoelectric conversion device |
TWI598859B (en) * | 2016-10-26 | 2017-09-11 | 友達光電股份有限公司 | Electronic Device And method for fabricating the same |
KR102654485B1 (en) * | 2016-12-30 | 2024-04-03 | 삼성전자주식회사 | Image sensor and method for fabricating the same |
TWI622165B (en) * | 2017-03-06 | 2018-04-21 | Powerchip Technology Corporation | Image sensor and fabrication method thereof |
EP3460848A1 (en) | 2017-09-26 | 2019-03-27 | Thomson Licensing | Image sensor comprising pixels for preventing or reducing the crosstalk effect |
KR102506837B1 (en) * | 2017-11-20 | 2023-03-06 | 삼성전자주식회사 | Image sensor and method for fabricating the same |
CN108257999A (en) * | 2018-01-24 | 2018-07-06 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
CN108470748B (en) * | 2018-03-03 | 2021-10-22 | 昆山国显光电有限公司 | Display screen, display device and terminal equipment |
US10609361B2 (en) * | 2018-06-29 | 2020-03-31 | Semiconductor Components Industries, Llc | Imaging systems with depth detection |
US10950674B2 (en) * | 2018-12-25 | 2021-03-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel |
CN109920810B (en) * | 2019-03-22 | 2021-07-20 | 德淮半导体有限公司 | Image sensor and forming method thereof |
US11749762B2 (en) | 2019-10-31 | 2023-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device comprising a photodetector with reduced dark current |
CN111463226A (en) * | 2020-05-11 | 2020-07-28 | 矽力杰半导体技术(杭州)有限公司 | Optoelectronic integrated device and method for manufacturing same |
US20220013560A1 (en) * | 2020-07-07 | 2022-01-13 | Visera Technologies Company Limited | Image sensor |
JP2022028207A (en) * | 2020-08-03 | 2022-02-16 | キヤノン株式会社 | Photoelectric conversion device and method for manufacturing the same, and imaging system |
US11923393B2 (en) * | 2021-01-07 | 2024-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor image sensor having reflection component and method of making |
US20230012344A1 (en) * | 2021-07-08 | 2023-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor and method of making |
CN115690858A (en) * | 2021-07-30 | 2023-02-03 | 群创光电股份有限公司 | Sensing device, manufacturing method of sensing device and electronic device |
WO2023026913A1 (en) * | 2021-08-23 | 2023-03-02 | ソニーセミコンダクタソリューションズ株式会社 | Imaging device and electronic apparatus |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06224398A (en) * | 1993-01-27 | 1994-08-12 | Sharp Corp | Slid-state image sensor and manufacture thereof |
WO1999046618A1 (en) * | 1998-03-09 | 1999-09-16 | Corning Incorporated | Optical waveguide structure including cascaded arrays of tapered waveguides |
EP1439582A2 (en) * | 2003-01-16 | 2004-07-21 | Samsung Electronics Co., Ltd. | Image sensor device with copper interconnects and method for forming the same |
US20040227170A1 (en) * | 2003-02-27 | 2004-11-18 | Tongbi Jiang | Total internal reflection (TIR) CMOS imager |
US20050139750A1 (en) * | 2003-12-12 | 2005-06-30 | Canon Kabushiki Kaisha | Internal structure of image sensing element |
EP1758372A1 (en) * | 2005-08-23 | 2007-02-28 | OmniVision Technologies, Inc. | Method and apparatus for reducing optical crosstalk in cmos image sensors |
EP1793247A1 (en) * | 2005-11-30 | 2007-06-06 | Stmicroelectronics SA | Integrated circuit with at least one photocell comprising a multi-level lightguide and corresponding fabrication method |
US20070158772A1 (en) * | 2006-01-10 | 2007-07-12 | Micron Technology, Inc. | Method and apparatus providing a uniform color filter in a recessed region of an imager |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2863422B2 (en) * | 1992-10-06 | 1999-03-03 | 松下電子工業株式会社 | Solid-state imaging device and method of manufacturing the same |
JP3303377B2 (en) | 1992-11-27 | 2002-07-22 | ソニー株式会社 | Solid-state imaging device |
JPH0964325A (en) * | 1995-08-23 | 1997-03-07 | Sony Corp | Solid-state image sensing device and its manufacture |
US5952645A (en) * | 1996-08-27 | 1999-09-14 | California Institute Of Technology | Light-sensing array with wedge-like reflective optical concentrators |
JPH10125887A (en) * | 1996-10-21 | 1998-05-15 | Toshiba Corp | Solid-state image sensor |
JP3402429B2 (en) | 1996-11-22 | 2003-05-06 | ソニー株式会社 | Solid-state imaging device and method of manufacturing the same |
JP3620237B2 (en) * | 1997-09-29 | 2005-02-16 | ソニー株式会社 | Solid-state image sensor |
JP3103064B2 (en) * | 1998-04-23 | 2000-10-23 | 松下電子工業株式会社 | Solid-state imaging device and method of manufacturing the same |
US6577342B1 (en) * | 1998-09-25 | 2003-06-10 | Intel Corporation | Image sensor with microlens material structure |
US6995800B2 (en) * | 2000-01-27 | 2006-02-07 | Canon Kabushiki Kaisha | Image pickup apparatus utilizing a plurality of converging lenses |
JP2001237405A (en) | 2000-02-24 | 2001-08-31 | Victor Co Of Japan Ltd | Solid-state image pickup device and its manufacturing method |
KR20020064290A (en) * | 2000-07-31 | 2002-08-07 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Image-sensing display device |
JP2002083949A (en) * | 2000-09-07 | 2002-03-22 | Nec Corp | Cmos image sensor and method of manufacturing the same |
US6566160B2 (en) * | 2001-06-21 | 2003-05-20 | United Microelectronics Corp. | Method of forming a color filter |
US6566151B2 (en) * | 2001-06-21 | 2003-05-20 | United Microelectronics Corp. | Method of forming a color filter |
FR2829876B1 (en) * | 2001-09-18 | 2004-07-02 | St Microelectronics Sa | PHOTOSENSITIVE CELL INCORPORATING A LIGHT GUIDE AND MATRIX COMPOSED OF SUCH CELLS |
US6975580B2 (en) * | 2001-12-18 | 2005-12-13 | Interntional Business Machines Corporation | Optical aperture for data recording having transmission enhanced by waveguide mode resonance |
JP2003229562A (en) * | 2002-02-05 | 2003-08-15 | Sony Corp | Semiconductor device, its manufacturing method and semiconductor manufacturing apparatus |
JP2004095895A (en) * | 2002-08-30 | 2004-03-25 | Sony Corp | Method for manufacturing solid state imaging device |
JP3840214B2 (en) * | 2003-01-06 | 2006-11-01 | キヤノン株式会社 | Photoelectric conversion device, method for manufacturing photoelectric conversion device, and camera using the same |
US7502058B2 (en) * | 2003-06-09 | 2009-03-10 | Micron Technology, Inc. | Imager with tuned color filter |
JP4548702B2 (en) * | 2003-10-02 | 2010-09-22 | キヤノン株式会社 | Imaging apparatus and imaging system |
US6969899B2 (en) * | 2003-12-08 | 2005-11-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with light guides |
EP1557886A3 (en) * | 2004-01-26 | 2006-06-07 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and camera |
US7119319B2 (en) * | 2004-04-08 | 2006-10-10 | Canon Kabushiki Kaisha | Solid-state image sensing element and its design support method, and image sensing device |
KR100689885B1 (en) * | 2004-05-17 | 2007-03-09 | 삼성전자주식회사 | The CMOS image sensor for improving the photo sensitivity and and method thereof |
US20050274871A1 (en) * | 2004-06-10 | 2005-12-15 | Jin Li | Method and apparatus for collecting photons in a solid state imaging sensor |
KR100688497B1 (en) * | 2004-06-28 | 2007-03-02 | 삼성전자주식회사 | Image sensor and method of fabrication the same |
US7335963B2 (en) | 2004-08-25 | 2008-02-26 | Micron Technology, Inc. | Light block for pixel arrays |
US7453109B2 (en) * | 2004-09-03 | 2008-11-18 | Canon Kabushiki Kaisha | Solid-state image sensor and imaging system |
US7768088B2 (en) * | 2004-09-24 | 2010-08-03 | Fujifilm Corporation | Solid-state imaging device that efficiently guides light to a light-receiving part |
US7078779B2 (en) * | 2004-10-15 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd | Enhanced color image sensor device and method of making the same |
JP2006128433A (en) * | 2004-10-29 | 2006-05-18 | Sony Corp | Optical device equipped with optical filter, and its manufacturing method |
US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
JP2006191000A (en) * | 2004-12-08 | 2006-07-20 | Canon Inc | Photoelectric converter |
KR100672660B1 (en) * | 2004-12-24 | 2007-01-24 | 동부일렉트로닉스 주식회사 | CMOS Image sensor and Method for fabricating of the same |
US8139131B2 (en) * | 2005-01-18 | 2012-03-20 | Panasonic Corporation | Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device |
JP4598680B2 (en) * | 2005-01-18 | 2010-12-15 | パナソニック株式会社 | Solid-state imaging device and camera |
JP2006237362A (en) * | 2005-02-25 | 2006-09-07 | Fuji Photo Film Co Ltd | Manufacturing method of solid-state image sensing device |
JP2006261229A (en) * | 2005-03-15 | 2006-09-28 | Fuji Photo Film Co Ltd | Solid state imaging element and its manufacturing method |
JP2006310825A (en) * | 2005-03-30 | 2006-11-09 | Fuji Photo Film Co Ltd | Solid-state imaging device and method of fabricating same |
KR100672687B1 (en) * | 2005-06-03 | 2007-01-22 | 동부일렉트로닉스 주식회사 | CMOS Image sensor and Method for fabricating of the same |
JP2006351775A (en) * | 2005-06-15 | 2006-12-28 | Fujifilm Holdings Corp | Method of manufacturing color filter, method of manufacturing solid-state imaging device and the solid-state imaging device employing the filter |
KR100718877B1 (en) * | 2005-06-20 | 2007-05-17 | (주)실리콘화일 | Color filter formation method and Image sensor manufactured using thereof |
KR100698091B1 (en) * | 2005-06-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | CMOS Image sensor and method for manufacturing the same |
US7265328B2 (en) * | 2005-08-22 | 2007-09-04 | Micron Technology, Inc. | Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor |
WO2007040246A1 (en) * | 2005-10-06 | 2007-04-12 | Nippon Sheet Glass Company, Limited | Image forming optical system, image reader using image forming optical system, and image writer |
JP2007150087A (en) | 2005-11-29 | 2007-06-14 | Fujifilm Corp | Solid-state imaging element and its manufacturing method |
KR20070069833A (en) * | 2005-12-28 | 2007-07-03 | 동부일렉트로닉스 주식회사 | Cmos image sensor and method for manufacturing the same |
KR100731131B1 (en) * | 2005-12-29 | 2007-06-22 | 동부일렉트로닉스 주식회사 | Cmos image sensor and method for manufacturing the same |
JP4759410B2 (en) * | 2006-03-06 | 2011-08-31 | 富士フイルム株式会社 | Solid-state image sensor |
US8610806B2 (en) * | 2006-08-28 | 2013-12-17 | Micron Technology, Inc. | Color filter array, imagers and systems having same, and methods of fabrication and use thereof |
JP2008192771A (en) * | 2007-02-02 | 2008-08-21 | Matsushita Electric Ind Co Ltd | Solid-state imaging element and manufacturing method therefor |
JP5364989B2 (en) | 2007-10-02 | 2013-12-11 | ソニー株式会社 | Solid-state imaging device and camera |
JP5164509B2 (en) * | 2007-10-03 | 2013-03-21 | キヤノン株式会社 | Photoelectric conversion device, photoelectric conversion device for visible light, and imaging system using them |
JP2009111225A (en) * | 2007-10-31 | 2009-05-21 | Fujifilm Corp | Solid-state image sensor and method of manufacturing the same |
US7816641B2 (en) * | 2007-12-28 | 2010-10-19 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
-
2008
- 2008-07-16 US US12/218,749 patent/US7816641B2/en not_active Expired - Fee Related
- 2008-12-22 SG SG2012089348A patent/SG187382A1/en unknown
- 2008-12-22 GB GB1205195.9A patent/GB2487010B/en not_active Expired - Fee Related
- 2008-12-22 GB GB1209401.7A patent/GB2488470B/en not_active Expired - Fee Related
- 2008-12-22 BR BRPI0822173A patent/BRPI0822173A8/en not_active IP Right Cessation
- 2008-12-22 MX MX2010007203A patent/MX2010007203A/en active IP Right Grant
- 2008-12-22 GB GB1012706.6A patent/GB2469247B/en not_active Expired - Fee Related
- 2008-12-22 JP JP2010540848A patent/JP6079978B2/en not_active Expired - Fee Related
- 2008-12-22 CN CN200880123359.0A patent/CN101971339B/en not_active Expired - Fee Related
- 2008-12-22 US US12/810,998 patent/US20100283112A1/en not_active Abandoned
- 2008-12-22 GB GB1203373.4A patent/GB2485715B/en not_active Expired - Fee Related
- 2008-12-22 ES ES201090046A patent/ES2422869B1/en not_active Expired - Fee Related
- 2008-12-22 GB GB1205371.6A patent/GB2487013B/en not_active Expired - Fee Related
- 2008-12-22 WO PCT/US2008/088077 patent/WO2009091484A1/en active Application Filing
- 2008-12-22 GB GB1209391.0A patent/GB2488468B/en not_active Expired - Fee Related
- 2008-12-22 GB GB1205474.8A patent/GB2487014B/en not_active Expired - Fee Related
- 2008-12-22 ES ES201430928A patent/ES2545429B1/en active Active
- 2008-12-22 DE DE112008003468T patent/DE112008003468T5/en not_active Withdrawn
- 2008-12-26 TW TW102128405A patent/TWI497705B/en not_active IP Right Cessation
- 2008-12-26 TW TW097151100A patent/TWI414059B/en not_active IP Right Cessation
- 2008-12-26 TW TW104115985A patent/TWI580017B/en not_active IP Right Cessation
-
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- 2010-01-27 US US12/694,299 patent/US8049153B2/en not_active Expired - Fee Related
- 2010-09-30 US US12/894,283 patent/US8299511B2/en not_active Expired - Fee Related
-
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- 2012-02-27 GB GBGB1203358.5A patent/GB201203358D0/en not_active Ceased
- 2012-03-26 GB GBGB1205198.3A patent/GB201205198D0/en not_active Ceased
- 2012-10-11 US US13/649,137 patent/US20130034927A1/en not_active Abandoned
- 2012-11-22 HK HK12111997.6A patent/HK1171566A1/en not_active IP Right Cessation
- 2012-11-23 HK HK12112028.7A patent/HK1171568A1/en not_active IP Right Cessation
-
2013
- 2013-02-27 HK HK13102452.2A patent/HK1175303A1/en not_active IP Right Cessation
- 2013-02-27 HK HK13102453.1A patent/HK1175304A1/en not_active IP Right Cessation
- 2013-12-18 US US14/132,027 patent/US20140117208A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06224398A (en) * | 1993-01-27 | 1994-08-12 | Sharp Corp | Slid-state image sensor and manufacture thereof |
WO1999046618A1 (en) * | 1998-03-09 | 1999-09-16 | Corning Incorporated | Optical waveguide structure including cascaded arrays of tapered waveguides |
EP1439582A2 (en) * | 2003-01-16 | 2004-07-21 | Samsung Electronics Co., Ltd. | Image sensor device with copper interconnects and method for forming the same |
US20040227170A1 (en) * | 2003-02-27 | 2004-11-18 | Tongbi Jiang | Total internal reflection (TIR) CMOS imager |
US20050139750A1 (en) * | 2003-12-12 | 2005-06-30 | Canon Kabushiki Kaisha | Internal structure of image sensing element |
EP1758372A1 (en) * | 2005-08-23 | 2007-02-28 | OmniVision Technologies, Inc. | Method and apparatus for reducing optical crosstalk in cmos image sensors |
EP1793247A1 (en) * | 2005-11-30 | 2007-06-06 | Stmicroelectronics SA | Integrated circuit with at least one photocell comprising a multi-level lightguide and corresponding fabrication method |
US20070158772A1 (en) * | 2006-01-10 | 2007-07-12 | Micron Technology, Inc. | Method and apparatus providing a uniform color filter in a recessed region of an imager |
Non-Patent Citations (2)
Title |
---|
KATAOKA Y ET AL: "DRY ETCHING CHARACTERISTICS OF SI-BASED MATERIALS USING CF4/O2 ATMOSPHERIC-PRESSURE GLOW DISCHARGE PLASMA", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO,JP, vol. 39, no. 1, PART 01, 1 January 2000 (2000-01-01), pages 294 - 298, XP001017788, ISSN: 0021-4922 * |
KIM BYUNGWHAN ET AL: "Etching of oxynitride thin films using inductively coupled plasma", 21 April 2005, JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY.; US, PAGE(S) 520 - 524, ISSN: 0734-2101, XP012073993 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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CN102549750A (en) * | 2009-11-05 | 2012-07-04 | 郑苍隆 | Optimized light guide array for an image sensor |
JP2012182426A (en) * | 2011-02-09 | 2012-09-20 | Canon Inc | Solid state image pickup device, image pickup system using solid state image pickup device and solis state image pickup device manufacturing method |
US8987852B2 (en) | 2011-02-09 | 2015-03-24 | Canon Kabushiki Kaisha | Solid-state image pickup apparatus, image pickup system including solid-state image pickup apparatus, and method for manufacturing solid-state image pickup apparatus |
CN102709345A (en) * | 2012-05-19 | 2012-10-03 | 渤海大学 | Superfine crystal silicon battery structure |
US9030587B2 (en) | 2012-05-25 | 2015-05-12 | Canon Kabushiki Kaisha | Solid-state image sensor with light-guiding portion |
US9941325B2 (en) | 2015-07-13 | 2018-04-10 | Canon Kabushiki Kaisha | Method of manufacturing solid-state image sensor |
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