WO2009111669A3 - Maskless doping technique for solar cells - Google Patents

Maskless doping technique for solar cells Download PDF

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Publication number
WO2009111669A3
WO2009111669A3 PCT/US2009/036239 US2009036239W WO2009111669A3 WO 2009111669 A3 WO2009111669 A3 WO 2009111669A3 US 2009036239 W US2009036239 W US 2009036239W WO 2009111669 A3 WO2009111669 A3 WO 2009111669A3
Authority
WO
WIPO (PCT)
Prior art keywords
create
contact regions
solar cells
maskless
ion implantation
Prior art date
Application number
PCT/US2009/036239
Other languages
French (fr)
Other versions
WO2009111669A2 (en
Inventor
Atul Gupta
Nicholas P.T. Bateman
Paul J. Murphy
Anthony Renau
Charles Carlson
Original Assignee
Varian Semiconductor Equipment Associates
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/200,117 external-priority patent/US20090317937A1/en
Application filed by Varian Semiconductor Equipment Associates filed Critical Varian Semiconductor Equipment Associates
Publication of WO2009111669A2 publication Critical patent/WO2009111669A2/en
Publication of WO2009111669A3 publication Critical patent/WO2009111669A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A improved, lower cost method of producing solar cells utilizing selective emitter design is disclosed. The contact regions are created on the substrate without the use of lithography or masks. The method utilizes ion implantation technology, and the relatively low accuracy requirements of the contact regions to reduce the process steps needed to produce a solar cell. In some embodiments, the current of the ion beam is selectively modified to create the highly doped contact regions. In other embodiments, the ion beam is focused, either through the use of an aperture or via adjustments to the beam line components to create the necessary doping profile. In still other embodiments, the wafer scan rate is modified to create the desired ion implantation pattern.
PCT/US2009/036239 2008-03-05 2009-03-05 Maskless doping technique for solar cells WO2009111669A2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US3387308P 2008-03-05 2008-03-05
US61/033,873 2008-03-05
US7427808P 2008-06-20 2008-06-20
US61/074,278 2008-06-20
US12/200,117 US20090317937A1 (en) 2008-06-20 2008-08-28 Maskless Doping Technique for Solar Cells
US12/200,117 2008-08-28

Publications (2)

Publication Number Publication Date
WO2009111669A2 WO2009111669A2 (en) 2009-09-11
WO2009111669A3 true WO2009111669A3 (en) 2009-12-17

Family

ID=41056657

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/036239 WO2009111669A2 (en) 2008-03-05 2009-03-05 Maskless doping technique for solar cells

Country Status (1)

Country Link
WO (1) WO2009111669A2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US8697552B2 (en) 2009-06-23 2014-04-15 Intevac, Inc. Method for ion implant using grid assembly
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013219599A1 (en) * 2013-09-27 2015-04-16 International Solar Energy Research Center Konstanz E.V. Method for producing a contact structure of a photovoltaic cell and photovoltaic cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134978A (en) * 1985-12-09 1987-06-18 Fujitsu Ltd Manufacture of complementary high speed semiconductor device
JP2000106436A (en) * 1998-07-28 2000-04-11 Matsushita Electronics Industry Corp Manufacture of semiconductor device
WO2004012219A1 (en) * 2002-07-29 2004-02-05 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134978A (en) * 1985-12-09 1987-06-18 Fujitsu Ltd Manufacture of complementary high speed semiconductor device
JP2000106436A (en) * 1998-07-28 2000-04-11 Matsushita Electronics Industry Corp Manufacture of semiconductor device
WO2004012219A1 (en) * 2002-07-29 2004-02-05 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8697553B2 (en) 2008-06-11 2014-04-15 Intevac, Inc Solar cell fabrication with faceting and ion implantation
US8871619B2 (en) 2008-06-11 2014-10-28 Intevac, Inc. Application specific implant system and method for use in solar cell fabrications
US8697552B2 (en) 2009-06-23 2014-04-15 Intevac, Inc. Method for ion implant using grid assembly
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8997688B2 (en) 2009-06-23 2015-04-07 Intevac, Inc. Ion implant system having grid assembly
US9303314B2 (en) 2009-06-23 2016-04-05 Intevac, Inc. Ion implant system having grid assembly
US9324598B2 (en) 2011-11-08 2016-04-26 Intevac, Inc. Substrate processing system and method
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
US9583661B2 (en) 2012-12-19 2017-02-28 Intevac, Inc. Grid for plasma ion implant

Also Published As

Publication number Publication date
WO2009111669A2 (en) 2009-09-11

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