WO2009114108A3 - Integrated method and system for manufacturing monolithic panels of crystalline solar cells - Google Patents

Integrated method and system for manufacturing monolithic panels of crystalline solar cells Download PDF

Info

Publication number
WO2009114108A3
WO2009114108A3 PCT/US2009/001457 US2009001457W WO2009114108A3 WO 2009114108 A3 WO2009114108 A3 WO 2009114108A3 US 2009001457 W US2009001457 W US 2009001457W WO 2009114108 A3 WO2009114108 A3 WO 2009114108A3
Authority
WO
WIPO (PCT)
Prior art keywords
array
cell
mother wafers
solar cells
followed
Prior art date
Application number
PCT/US2009/001457
Other languages
French (fr)
Other versions
WO2009114108A2 (en
Inventor
Tirunelveli S. Ravi
Ananda H. Kumar
Ashish Asthana
Original Assignee
Crystal Solar, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Crystal Solar, Inc. filed Critical Crystal Solar, Inc.
Priority to EP09720456.4A priority Critical patent/EP2269230A4/en
Publication of WO2009114108A2 publication Critical patent/WO2009114108A2/en
Publication of WO2009114108A3 publication Critical patent/WO2009114108A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers (3002) affixed to a susceptor (3025). Porous silicon separation layers (3010) are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures (3016). Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer (3012) to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels.
PCT/US2009/001457 2008-03-08 2009-03-06 Integrated method and system for manufacturing monolithic panels of crystalline solar cells WO2009114108A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09720456.4A EP2269230A4 (en) 2008-03-08 2009-03-06 Integrated method and system for manufacturing monolithic panels of crystalline solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6862908P 2008-03-08 2008-03-08
US61/068,629 2008-03-08

Publications (2)

Publication Number Publication Date
WO2009114108A2 WO2009114108A2 (en) 2009-09-17
WO2009114108A3 true WO2009114108A3 (en) 2009-12-17

Family

ID=41054040

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/001457 WO2009114108A2 (en) 2008-03-08 2009-03-06 Integrated method and system for manufacturing monolithic panels of crystalline solar cells

Country Status (3)

Country Link
US (2) US8030119B2 (en)
EP (1) EP2269230A4 (en)
WO (1) WO2009114108A2 (en)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030119B2 (en) 2008-03-08 2011-10-04 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US20100108134A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin two sided single crystal solar cell and manufacturing process thereof
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US8298629B2 (en) 2009-02-25 2012-10-30 Crystal Solar Incorporated High throughput multi-wafer epitaxial reactor
US8673081B2 (en) 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
CN101958361A (en) * 2009-07-13 2011-01-26 无锡尚德太阳能电力有限公司 Method for etching transparent thin-film solar cell component
US20110056532A1 (en) * 2009-09-09 2011-03-10 Crystal Solar, Inc. Method for manufacturing thin crystalline solar cells pre-assembled on a panel
US20110253694A1 (en) * 2010-04-16 2011-10-20 Nunzio Consiglio Radiant Heating Tile System
TW201210058A (en) * 2010-05-12 2012-03-01 Applied Materials Inc Method of manufacturing crystalline silicon solar cells using epitaxial deposition
US20130000715A1 (en) * 2011-03-28 2013-01-03 Solexel, Inc. Active backplane for thin silicon solar cells
WO2012021750A1 (en) 2010-08-11 2012-02-16 Crystal Solar, Inc. Mwt architecture for thin si solar cells
WO2012024438A2 (en) * 2010-08-17 2012-02-23 EncoreSolar, Inc. Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing
US8809097B1 (en) 2010-09-22 2014-08-19 Crystal Solar Incorporated Passivated emitter rear locally patterned epitaxial solar cell
EP2619790B1 (en) 2010-09-24 2018-03-28 Solexel, Inc. High-throughput batch porous silicon manufacturing equipment design and processing methods
FR2969377B1 (en) * 2010-12-16 2013-09-27 St Microelectronics Crolles 2 PROCESS FOR PRODUCING INTEGRATED CIRCUIT CHIPS
FR2969376B1 (en) 2010-12-16 2013-09-27 St Microelectronics Crolles 2 PROCESS FOR PRODUCING INTEGRATED CIRCUIT CHIPS
WO2012129184A1 (en) * 2011-03-18 2012-09-27 Crystal Solar, Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
US9255346B2 (en) 2011-05-27 2016-02-09 Crystal Solar, Incorporated Silicon wafers by epitaxial deposition
TWI558860B (en) 2011-08-19 2016-11-21 威廉馬許萊斯大學 Anode battery materials and methods of making the same
TWI473289B (en) * 2011-09-22 2015-02-11 Pinecone En Inc Method of making a solar cell
CN102427101B (en) * 2011-11-30 2014-05-07 李园 Semiconductor structure and forming method thereof
WO2013106827A1 (en) 2012-01-13 2013-07-18 Crystal Solar, Inc. Silicon heterojunction solar cells
GB2502293A (en) * 2012-05-22 2013-11-27 Renewable Energy Corp Asa A method for manufacturing a back contacted back junction solar cell module
US9559236B2 (en) * 2014-09-24 2017-01-31 Sunpower Corporation Solar cell fabricated by simplified deposition process
US9620466B1 (en) * 2015-11-30 2017-04-11 Infineon Technologies Ag Method of manufacturing an electronic device having a contact pad with partially sealed pores
US10490682B2 (en) 2018-03-14 2019-11-26 National Mechanical Group Corp. Frame-less encapsulated photo-voltaic solar panel supporting solar cell modules encapsulated within multiple layers of optically-transparent epoxy-resin materials
CN109371383A (en) * 2018-12-25 2019-02-22 南京爱通智能科技有限公司 A kind of carrier suitable for ultra-large atomic layer deposition apparatus
US11465225B1 (en) 2021-08-31 2022-10-11 Yield Engineering Systems, Inc. Method of using processing oven
CN114714156A (en) * 2022-03-14 2022-07-08 银川隆基光伏科技有限公司 Processing method of silicon wafer, control system, silicon wafer, solar cell and assembly of solar cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62224089A (en) * 1986-03-26 1987-10-02 Hitachi Ltd Solar cell
JP2001158680A (en) * 1999-11-30 2001-06-12 Ibiden Co Ltd Silicon carbide-metal complex, method for producing the same, member for wafer-polishing device and table for wafer-polishing device
KR20020073816A (en) * 2001-03-16 2002-09-28 삼성전자 주식회사 Etching apparatus and method for manufacturing semiconductor device
JP2005038964A (en) * 2003-07-17 2005-02-10 Shin Etsu Handotai Co Ltd Semiconductor wafer and its manufacturing method

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653970A (en) * 1969-04-30 1972-04-04 Nasa Method of coating solar cell with borosilicate glass and resultant product
US4301324A (en) * 1978-02-06 1981-11-17 International Business Machines Corporation Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
US4445965A (en) 1980-12-01 1984-05-01 Carnegie-Mellon University Method for making thin film cadmium telluride and related semiconductors for solar cells
US4832755A (en) 1987-08-11 1989-05-23 The Boeing Company Glass encapsulation of solar cell arrays to minimize voltage/plasma interaction effects in a space environment
US5458755A (en) * 1992-11-09 1995-10-17 Canon Kabushiki Kaisha Anodization apparatus with supporting device for substrate to be treated
JP3257580B2 (en) 1994-03-10 2002-02-18 キヤノン株式会社 Manufacturing method of semiconductor substrate
US6107213A (en) * 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
JP3381443B2 (en) 1995-02-02 2003-02-24 ソニー株式会社 Method for separating semiconductor layer from substrate, method for manufacturing semiconductor device, and method for manufacturing SOI substrate
US7732243B2 (en) * 1995-05-15 2010-06-08 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US5834840A (en) 1995-05-25 1998-11-10 Massachusetts Institute Of Technology Net-shape ceramic processing for electronic devices and packages
EP0840381A3 (en) * 1996-10-31 1999-08-04 Sony Corporation Thin-film semiconductor device and its manufacturing method and apparatus and thin-film semiconductor solar cell module and its manufacturing method
JP3376258B2 (en) * 1996-11-28 2003-02-10 キヤノン株式会社 Anodizing apparatus and related apparatus and method
EP0851513B1 (en) * 1996-12-27 2007-11-21 Canon Kabushiki Kaisha Method of producing semiconductor member and method of producing solar cell
JP3647191B2 (en) * 1997-03-27 2005-05-11 キヤノン株式会社 Manufacturing method of semiconductor device
JP3501642B2 (en) * 1997-12-26 2004-03-02 キヤノン株式会社 Substrate processing method
US6331208B1 (en) * 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
JP3619058B2 (en) 1998-06-18 2005-02-09 キヤノン株式会社 Manufacturing method of semiconductor thin film
EP0996145A3 (en) * 1998-09-04 2000-11-08 Canon Kabushiki Kaisha Process for producing semiconductor substrate
JP2000277478A (en) * 1999-03-25 2000-10-06 Canon Inc Anodization device and system, substrate processing device and method, and manufcature thereof
US7022211B2 (en) * 2000-01-31 2006-04-04 Ebara Corporation Semiconductor wafer holder and electroplating system for plating a semiconductor wafer
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
JP2001007362A (en) * 1999-06-17 2001-01-12 Canon Inc Semiconductor substrate and manufacture of solar cell
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
US6551908B2 (en) * 2000-10-02 2003-04-22 Canon Kabushiki Kaisha Method for producing semiconductor thin films on moving substrates
US20040081746A1 (en) * 2000-12-12 2004-04-29 Kosuke Imafuku Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
DE10122324A1 (en) 2001-05-08 2002-11-14 Philips Corp Intellectual Pty Flexible integrated monolithic circuit
US7259321B2 (en) * 2002-01-07 2007-08-21 Bp Corporation North America Inc. Method of manufacturing thin film photovoltaic modules
US6946597B2 (en) * 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
JP2004235274A (en) 2003-01-28 2004-08-19 Kyocera Corp Polycrystalline silicon substrate and method of roughing its surface
US7160753B2 (en) 2004-03-16 2007-01-09 Voxtel, Inc. Silicon-on-insulator active pixel sensors
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060125577A1 (en) * 2004-12-13 2006-06-15 International Semiconductor Techonology Ltd. Acoustic resonator device and method for manufacturing the same
US10374120B2 (en) 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
TW200707799A (en) 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
GB2430671A (en) 2005-09-30 2007-04-04 Fujimi Inc Thermal spray powder including yttria
EP1949433B1 (en) 2005-11-11 2011-08-03 Koninklijke Philips Electronics N.V. Method of manufacturing a plurality of semiconductor devices and carrier substrate
JP2009532918A (en) * 2006-04-05 2009-09-10 シリコン ジェネシス コーポレーション Manufacturing method and structure of solar cell using layer transfer process
KR100880946B1 (en) 2006-07-03 2009-02-04 엘지전자 주식회사 Solar Cell and Manufacturing Method thereof
US20080057678A1 (en) * 2006-08-31 2008-03-06 Kishor Purushottam Gadkaree Semiconductor on glass insulator made using improved hydrogen reduction process
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US20080264477A1 (en) * 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
WO2008157807A2 (en) 2007-06-20 2008-12-24 Ascent Solar Technologies, Inc. Array of monolithically integrated thin film photovoltaic cells and associated methods
US20110304527A1 (en) * 2007-09-14 2011-12-15 Sean Wu Computer-implemented methods, carrier media, and systems for displaying an image of at least a portion of a wafer
US7882453B2 (en) * 2007-10-17 2011-02-01 Rapid Bridge Llc Semiconductor device metal programmable pooling and dies
US20090181553A1 (en) * 2008-01-11 2009-07-16 Blake Koelmel Apparatus and method of aligning and positioning a cold substrate on a hot surface
WO2009099656A1 (en) * 2008-02-06 2009-08-13 Green Volts, Inc. Solar cell with integrated thermally conductive and electrically insulating substrate
US8030119B2 (en) 2008-03-08 2011-10-04 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
KR101476120B1 (en) 2008-06-12 2014-12-26 주성엔지니어링(주) Thin film type Solar Cell and Method for manufacturing the same
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62224089A (en) * 1986-03-26 1987-10-02 Hitachi Ltd Solar cell
JP2001158680A (en) * 1999-11-30 2001-06-12 Ibiden Co Ltd Silicon carbide-metal complex, method for producing the same, member for wafer-polishing device and table for wafer-polishing device
KR20020073816A (en) * 2001-03-16 2002-09-28 삼성전자 주식회사 Etching apparatus and method for manufacturing semiconductor device
JP2005038964A (en) * 2003-07-17 2005-02-10 Shin Etsu Handotai Co Ltd Semiconductor wafer and its manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2269230A4 *

Also Published As

Publication number Publication date
US8030119B2 (en) 2011-10-04
WO2009114108A2 (en) 2009-09-17
US8900399B2 (en) 2014-12-02
EP2269230A4 (en) 2016-03-30
EP2269230A2 (en) 2011-01-05
US20110300715A1 (en) 2011-12-08
US20090227063A1 (en) 2009-09-10

Similar Documents

Publication Publication Date Title
WO2009114108A3 (en) Integrated method and system for manufacturing monolithic panels of crystalline solar cells
WO2011133975A3 (en) Thin film solar cell with ceramic handling layer
KR101339573B1 (en) Method for manufacturing substrate for photoelectric conversion element
Brendel Review of layer transfer processes for crystalline thin-film silicon solar cells
KR100880946B1 (en) Solar Cell and Manufacturing Method thereof
CN101789466B (en) method for manufacturing solar battery
WO2010062343A3 (en) Thin two sided single crystal solar cell and manufacturing process thereof
MY165969A (en) High-productivity porous semiconductor manufacturing equipment
US10008618B2 (en) Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
EP0993050A3 (en) Substrate for producing semiconductor device, method for producing the substrate, photoelectric conversion device and method for producing the photoelectric conversion device
WO2011012382A3 (en) Silicon wafer based structure for heterostructure solar cells
WO2011078521A3 (en) Back-surface-field type of heterojunction solar cell and a production method therefor
TW201444109A (en) Solar automobile skylight and manufacturing method thereof
JP2009536455A (en) Photovoltaic device using lateral crystallization process and manufacturing method thereof
TW201543698A (en) Method for producing thin-film solar cell, and thin-film solar cell
CN104157725B (en) Method for manufacturing GaInP/GaAs/InGaAsP/InGaAs four-junction cascading solar cell
WO2008141863A3 (en) Backside contacting on thin layer photovoltaic cells
KR101062319B1 (en) Window manufacturing method using a cell and a cassette used therein
CN105280745B (en) Tetra- knot cascade solar cells of GaInP/GaAs/InGaAs/Ge and preparation method thereof
CN104218108B (en) High-efficiency flexible thin film solar cell
Depauw et al. Innovative lift‐off solar cell made of monocrystalline‐silicon thin film by annealing of ordered macropores
TW200847451A (en) A mask device for thin-film solar cell coating and the method of using the mask
CN104362215B (en) A kind of high-efficiency flexible thin-film solar cells manufacture method
CN110911513A (en) BIPV assembly structure and preparation method
CN204144278U (en) A kind of high-efficiency flexible thin-film solar cells

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09720456

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009720456

Country of ref document: EP