WO2009114362A1 - Thin film metal oxynitride semiconductors - Google Patents
Thin film metal oxynitride semiconductors Download PDFInfo
- Publication number
- WO2009114362A1 WO2009114362A1 PCT/US2009/036035 US2009036035W WO2009114362A1 WO 2009114362 A1 WO2009114362 A1 WO 2009114362A1 US 2009036035 W US2009036035 W US 2009036035W WO 2009114362 A1 WO2009114362 A1 WO 2009114362A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nitrogen
- oxygen
- tin
- semiconductor film
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 229910052751 metal Inorganic materials 0.000 title claims description 20
- 239000002184 metal Substances 0.000 title claims description 20
- 239000010409 thin film Substances 0.000 title description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 92
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000001301 oxygen Substances 0.000 claims abstract description 71
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 71
- 239000007789 gas Substances 0.000 claims abstract description 56
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 43
- 229910052718 tin Inorganic materials 0.000 claims abstract description 42
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000000151 deposition Methods 0.000 claims abstract description 29
- 238000005477 sputtering target Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 23
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052738 indium Inorganic materials 0.000 claims abstract description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 19
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 19
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 13
- 239000011701 zinc Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 22
- 239000002019 doping agent Substances 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 12
- -1 nitride compound Chemical class 0.000 claims description 11
- 150000002739 metals Chemical class 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 8
- 229920005591 polysilicon Polymers 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 81
- 239000011135 tin Substances 0.000 description 45
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 229910052786 argon Inorganic materials 0.000 description 15
- 230000008021 deposition Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910004605 CdOx Inorganic materials 0.000 description 3
- 229910005535 GaOx Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910007667 ZnOx Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910006857 SnOxNy Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- Embodiments of the present invention generally relate to a semiconductor material and a method for depositing the semiconductor material.
- Amorphous silicon and polysilicon have been the semiconductor materials of choice for field effect thin film transistors (TFTs), for backplane to drive liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, quantum dot displays, and building solar cell panels.
- TFTs field effect thin film transistors
- LCDs liquid crystal displays
- OLED organic light emitting diode
- quantum dot displays and building solar cell panels.
- Amorphous silicon may have an electron mobility as high as about 1 cm 2 /V- s.
- Low temperature polysilicon may have an electron mobility higher than 50 cm 2 /V- s, but requires a complicated process step such as laser annealing to achieve the electron mobility. Therefore, the cost of producing polysilicon with an electron mobility higher than 50 cm 2 /V-s is very high and not suitable for large area substrate applications.
- the semiconductor material creates the channel between the source and drain electrodes. Without a voltage supply to the gate electrode, no current may go through the source-drain electrode even with a voltage between the source-drain electrodes. As voltage is supplied to the gate electrode, mobile electrons inside the semiconductor layer will accumulate in the area very close to the interface between the gate dielectric layer and the semiconductor layer. The semiconductor layer becomes conductive, and electrodes may go through the source-drain electrode easily with a low voltage between the source-drain electrodes. High mobility of the semiconductor materials indicates the mobile electrons in the semiconductor are more sensitive to the electric field created by the gate electrode, and the semiconductor channel becomes more conductive. The semiconductor material determines the current which may go through the semiconductor channel influenced by voltage applied across the gate and source terminals. The greater the mobility of the semiconductor material, the less voltage is needed to achieve the current required across the FET.
- Amorphous silicon may rely upon hydrogen passivation to achieve a desired mobility in a TFT.
- the amorphous silicon may be deposited by chemical vapor deposition (CVD) at temperatures up to about 350 degrees Celsius.
- the hydrogen passivation, while helping the amorphous silicon achieve the desired mobility, may not be stable such that a TFT's threshold voltage may change with time under gate electrode voltage and under relatively high temperatures created by the device itself.
- the present invention generally relates to a semiconductor film and a method of depositing the semiconductor film.
- the semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped.
- the semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas.
- the sputtering target may optionally be doped.
- the semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.
- a sputtering method comprises flowing an oxygen containing gas and a nitrogen containing gas into a processing chamber, applying an electrical bias to a sputtering target comprising one or more metals selected from the group consisting of gallium, cadmium, indium, and tin, and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more metals, oxygen, and nitrogen.
- a semiconductor material comprises nitrogen, oxygen, and one or more elements selected from the group consisting of gallium, cadmium, indium, and tin.
- a semiconductor material comprises oxygen, nitrogen, and one or more elements having a filled s orbital and a filled d orbital.
- a semiconductor layer deposition method comprises introducing an oxygen containing precursor, a nitrogen containing precursor, and at least one precursor selected from the group consisting of a gallium precursor, a cadmium precursor, a tin precursor, and an indium precursor to a processing chamber and depositing a semiconductor layer on a substrate disposed in the processing chamber, the semiconductor layer comprising oxygen, nitrogen, and at least one element selected from the group consisting of gallium, cadmium, tin, and indium.
- a semiconductor layer deposition method comprises flowing an oxygen containing gas and a nitrogen containing gas into a processing chamber, applying an electrical bias to a sputtering target comprising one or more elements having a filled s orbital and a filled d orbital, and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more elements, oxygen, and nitrogen.
- Figure 1 is a schematic cross sectional view of a sputtering chamber that may be used to deposit the semiconductor film according to one embodiment of the invention.
- Figure 2A is a graph showing the effect of nitrogen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen.
- Figure 2B is a graph showing the effect of oxygen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen.
- Figures 3A and 3B and XRD graphs showing the film structure of a semiconductor film containing tin, nitrogen, and oxygen.
- the present invention generally relates to a semiconductor film and a method of depositing the semiconductor film.
- the semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped.
- the semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas.
- the sputtering target may optionally be doped.
- the semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.
- a reactive sputtering method is illustratively described and may be practiced in a PVD chamber for processing large area substrates, such as a 4300 PVD chamber, available from AKT, a subsidiary of Applied Materials, Inc., Santa Clara, California.
- the semiconductor film produced according to the method may be determined by the film structure and composition, it should be understood that the reactive sputtering method may have utility in other system configurations, including those systems configured to process large area round substrates and those systems produced by other manufacturers, including roll-to-roll process platforms.
- the invention is illustratively described below as deposited by PVD, other methods including chemical vapor deposition (CVD), atomic layer deposition (ALD), or spin-on processes may be utilized to deposit the inventive films.
- CVD chemical vapor deposition
- ALD atomic layer deposition
- spin-on processes may be utilized to deposit the inventive films.
- FIG. 1 is a cross-sectional schematic view of a PVD chamber 100 according to one embodiment of the invention.
- the chamber 100 may be evacuated by a vacuum pump 114.
- a substrate 102 may be disposed opposite a target 104.
- the substrate may be disposed on a susceptor 106 within the chamber 100.
- the susceptor 106 may be elevated and lowered as shown by arrows "A" by an actuator 112.
- the susceptor 106 may be elevated to raise the substrate 102 to a processing position and lowered so that the substrate 102 may be removed from the chamber 100.
- Lift pins 108 elevate the substrate 102 above the susceptor 106 when the susceptor 106 is in the lowered position.
- Grounding straps 110 may ground the susceptor 106 during processing.
- the susceptor 106 may be raised during processing to aid in uniform deposition.
- the temperature of the susceptor 106 may be maintained within a range of about room temperature to about 400 degrees Celsius. In one embodiment, the temperature of the susceptor 106 may be maintained between about 25 degrees Celsius and about 250 degrees Celsius.
- the target 104 may comprise one or more targets 104.
- the target 104 may comprise a large area sputtering target 104.
- the target 104 may comprise a plurality of tiles.
- the target 104 may comprise a plurality of target strips.
- the target 104 may comprise one or more cylindrical, rotary targets.
- the target 104 may be bonded to a backing plate 116 by a bonding layer (not shown).
- One or more magnetrons 118 may be disposed behind the backing plate 116. The magnetrons 118 may scan across the backing plate 116 in a linear movement or in a two dimensional path.
- the walls of the chamber may be shielded from deposition by a dark space shield 120 and a chamber shield 122.
- an anode 124 may be placed between the target 104 and the substrate 102.
- the anode 124 may be bead blasted stainless steel coated with arc sprayed aluminum.
- one end of the anode 124 may be mounted to the chamber wall by a bracket 130.
- the anode 124 provides a charge in opposition to the target 104 so that charged ions will be attracted thereto rather than to the chamber walls which are typically at ground potential.
- a cooling fluid may be provided through the one or more anodes 124.
- flaking of material from the anodes 124 may be reduced.
- the anodes 124 spanning the processing space may not be necessary as the chamber walls may be sufficient to provide a path to ground and a uniform plasma distribution.
- One or more gas introduction tubes 126 may also span the distance across the chamber 100 between the target 104 and the substrate 102. For smaller substrates and hence, smaller chambers, the gas introduction tubes 126 spanning the processing space may not be necessary as an even gas distribution may be possible through conventional gas introduction means.
- the gas introduction tubes 126 may introduce sputtering gases from a gas panel 132.
- the gas introduction tubes 126 may be coupled with the anodes 124 by one or more couplings 128.
- the coupling 128 may be made of thermally conductive material to permit the gas introduction tubes 126 to be conductively cooled.
- the reactive sputtering process may comprise disposing a metallic sputtering target opposite a substrate in a sputtering chamber.
- the metallic sputtering target may substantially comprise one or more elements selected from the group consisting of zinc, gallium, indium, tin, and cadmium.
- the sputtering target may comprise one or more elements having a filled s orbital and a filled d orbital.
- the sputtering target may comprise one or more elements having a filled f orbital.
- the sputtering target may comprise one or more divalent elements.
- the sputtering target may comprise one or more trivalent elements.
- the sputtering target may comprise one or more tetravalent elements.
- the sputtering target may also comprise a dopant. Suitable dopants that may be used include Al, Sn, Ga, Ca, Si, Ti, Cu, Ge, In, Ni, Mn, Cr, V, Mg, Si x N y , AI x Oy, and SiC. In one embodiment, the dopant comprises aluminum. In another embodiment, the dopant comprises tin.
- the substrate may comprise plastic, paper, polymer, glass, stainless steel, and combinations thereof. When the substrate is plastic, the reactive sputtering may occur at temperatures below about 180 degrees Celsius.
- Examples of semiconductor films that may be deposited include ZnO x N y :AI, ZnO x N y :Sn, SnO x N y :AI, lnO x N y :AI, lnO x N y :Sn, CdO x N y :AI, CdO x N y :Sn, GaO x N y :AI, GaO x N y :Sn, ZnSnO x N y :AI ZnlnO x N y :AI, ZnlnO x N y :Sn, ZnCdO x N y :AI, ZnCdO x N y :Sn, ZnGaO x N y :AI, ZnGaO x N y :Sn, SnlnO x N y :AI, SnCdO x N y :AI, SnGa
- argon, a nitrogen containing gas, and an oxygen containing gas may be provided to the chamber for reactive sputtering the metallic target. Additional additives such as B 2 H 6 , CO 2 , CO, CH 4 , and combinations thereof may also be provided to the chamber during the sputtering.
- the nitrogen containing gas comprises N 2 .
- the nitrogen containing gas comprises N 2 O, NH 3 , or combinations thereof.
- the oxygen containing gas comprises O 2 .
- the oxygen containing gas comprises N 2 O.
- the nitrogen of the nitrogen containing gas and the oxygen of the oxygen containing gas react with the metal from the sputtering target to form a semiconductor material comprising metal, oxygen, nitrogen, and optionally a dopant on the substrate.
- the nitrogen containing gas and the oxygen containing gas are separate gases.
- the nitrogen containing gas and the oxygen containing gas comprise the same gas.
- the film deposited is a semiconductor film.
- semiconductor films that may be deposited include ZnO x Ny, SnO x N y , InO x N y , CdO x Ny, GaO x Ny, ZnSnO x N y , ZnInO x N y , ZnCdO x N y , ZnGaO x N y , SnInO x N y , SnCdO x N y , SnGaO x N y , InCdO x N y , InGaO x N y , CdGaO x N y , ZnSnInO x N y , ZnSnCdO x N y , ZnSnGaO x N y , ZnInCdO x N y , ZnInGaO x Ny, ZnCdGaO x Ny, SnInG
- the semiconductor film may comprise an oxynitride compound.
- the semiconductor film comprises both a metal oxynitride compound as well as a metal nitride compound.
- the semiconductor film may comprise a metal oxynitride compound, a metal nitride compound, and a metal oxide compound.
- the semiconductor film may comprise a metal oxynitride compound and a metal oxide compound.
- the semiconductor film may comprise a metal nitride compound and a metal oxide compound.
- the ratio of the nitrogen containing gas to the oxygen containing gas may affect the mobility, carrier concentration, and resistivity of the semiconductor film.
- Table I shows the effect of the nitrogen flow rate on the mobility, resistivity, and carrier concentration for a tin target sputtered in an atmosphere of argon and nitrogen gas. Generally, Table I shows that when the nitrogen flow rate increases, the mobility also increases. The argon and oxygen flow rates may remain the same. In Table I, the argon flow rate is 60 seem and the oxygen flow rate is 5 seem. The higher substrate temperature also provides an increase in mobility. The carrier concentration is weakly correlated with the mobility.
- the deposited film is an n-type semiconductor material which may function as an electron carrier and hence, the carrier concentration is shown as a negative number.
- the oxygen containing gas also affects the mobility, carrier concentration, and resistivity of the semiconductor film.
- Table Il shows the effect of the oxygen flow rate on the mobility, resistivity, and carrier concentration for a tin target sputtered in an atmosphere of argon, nitrogen gas, and oxygen gas.
- the argon flow rate may remain the same.
- the argon flow rate is 60 seem.
- Table Il shows that for high nitrogen gas to oxygen gas ratios, the mobility may be higher than the mobility for amorphous silicon. Additionally, the higher the ratio of nitrogen to oxygen, the lower the carrier concentration. At a 200 seem nitrogen flow rate, the mobility increases as the oxygen flow rate increase, but then decreases at higher oxygen flow rates.
- the mobility may be between about 4 cm 2 /V-s and about 10 cm 2 /V-s at a temperature of 150 degrees Celsius.
- the increase in mobility is not correlated to the carrier concentration.
- the mobility improvement may be a result of less scattering of the carrier.
- the mobility may be very low if no nitrogen additives are used. In such a scenario, the carrier concentration drops significantly as the oxygen gas flow increases. The higher the substrate temperature for a tin target, the better the mobility.
- the pressure may be between about 5 mTorr to about 20 mTorr.
- the amount of dopant may also affect the mobility of the deposited film. However, the mobility will still generally increase with an increase of nitrogen gas flow whether the target is doped or not.
- Table III shows the effect of dopant upon the mobility, carrier concentration, and resistivity. The dopant is shown in weight percentage. The argon flow rate may be the same for each deposited film. In Table III, the argon flow rate is 120 seem. The carrier concentration when utilizing a dopant may be lower than in the scenario where no dopant is used. Thus, the dopant may be used to tune the carrier concentration. Table III
- Table IV discloses the effect of oxygen gas flow on the mobility, carrier concentration, and resistivity of the semiconductor film.
- the mobility of the film will increase as the oxygen flow increases, but drop with a further increase in oxygen flow rate.
- the argon flow rate may be the same for each deposited film. In Table III, the argon flow rate is 120 seem.
- the mobility of the film will decrease once the nitrogen containing gas to oxygen containing gas ratio is less than about 10:1.
- the increase in mobility does not relate to an increase in carrier concentration as the oxygen flow rate increases.
- the carrier concentration and mobility may be tuned with the amount of dopant present.
- Table V shows the affect of the power density applied on the mobility, carrier concentration, and resistivity of the semiconductor film.
- the power density does not greatly affect the mobility, but the higher the power density, the higher the carrier concentration and resistivity.
- the power density applied to the sputtering target may be between about 0.3 W/cm 2 and about 1.0 W/cm 2 .
- Table Vl shows the effects of utilizing N 2 O as the oxygen containing gas in depositing the semiconductor film.
- the N 2 O gas is effective as an oxygen containing gas in raising the mobility of the semiconductor film and producing a reasonably low carrier concentration.
- Table VII show the chemical analysis for a semiconductor film that comprises tin, oxygen, and nitrogen and shows the effect of oxygen containing gas upon the film using X-ray photoelectron spectroscopy (XPS).
- Film 1 was deposited by sputtering a tin target for 360 seconds while a DC bias of 400 W was applied to the sputtering target.
- Argon was introduced to the processing chamber at a flow rate of 60 seem, nitrogen was introduced at a flow rate of 200 seem, and oxygen was introduced at a flow rate of 5 seem. The deposition occurred at a temperature of 250 degrees Celsius.
- Film 1 had a carbon content of Film 1 was 22.5 atomic percent, a nitrogen content of 19.4 atomic percent, an oxygen content of 29.4 atomic percent, a fluorine content of 0.7 atomic percent, and a tin content of 28.1 atomic percent. Most, if not all, of the carbon could arise from adventitious carbon (Ae., carbon compounds adsorbed onto the surface of any sample exposed to the atmosphere). Film 2 was deposited by sputtering a tin target for 360 seconds while a DC bias of 400 W was applied to the sputtering target. Argon was introduced to the processing chamber at a flow rate of 60 seem, nitrogen was introduced at a flow rate of 200 seem, and oxygen was introduced at a flow rate of 20 seem.
- Film 2 had a carbon content of 17.3 atomic percent, a nitrogen content of 4.5 atomic percent, an oxygen content of 49.9 atomic percent, a fluorine content of 0.6 percent, and a tin content of 27.7 atomic percent. Most, if not all, of the carbon could arise from adventitious carbon (Ae., carbon compounds adsorbed onto the surface of any sample exposed to the atmosphere). As shown in Table VII, as the oxygen flow rate (and hence, the ratio of oxygen to nitrogen) increases, the oxynitride content increases as well as does the tin oxide content. However, the tin nitride content and silicon oxynitride content is reduced. In Table VII, R equals oxygen or nitrogen. Table VII
- Table VIII shows the results for several semiconductor films that were deposited by sputtering.
- the semiconductor films comprised zinc, tin, oxygen, and nitrogen.
- the semiconductor films were sputter deposited from a sputtering target having a zinc content of 70 atomic percent and a tin content of 30 atomic percent.
- the deposition occurred at a temperature of 250 degrees Celsius with a power of 400 W applied to the sputtering target.
- the deposition occurred for 360 seconds under an argon flow rate of 60 seem and an oxygen flow rate of 20 seem.
- the data shows that the mobility of the semiconductor film increases as the nitrogen flow rate (and hence, the ratio of nitrogen gas to oxygen gas) increases.
- Figure 2A is a graph showing the effect of nitrogen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen.
- the nitrogen gas moves the optical adsorption edge toward a short wavelength or a larger band gap.
- the increased nitrogen flow rate may cause the film to be more transparent in the visible range.
- Figure 2B is a graph showing the effect of oxygen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen. The greater the oxygen flow rate, the more the absorption edge moves to the shorter wavelength or a larger band gap. The absorption edge will move towards the shorter wavelength at higher temperatures.
- Figures 3A and 3B and XRD graphs showing the film structure of a semiconductor film containing tin, nitrogen, and oxygen.
- the film structure changes from the metal tin crystal structure to an amorphous structure as the ratio of nitrogen to oxygen increases.
- Figure 3A shows the results for a 250 degrees Celsius deposition.
- Figure 3B shows the results for a 150 degrees Celsius deposition.
- the semiconductor film is described as being deposited by sputtering a metal target that may contain a dopant, it is to be understood that other deposition methods may be utilized.
- the sputtering target may containing the metal, oxygen, and nitrogen and be biased with an RF current.
- precursor gases may be introduced to a processing chamber to deposit the semiconductor film by CVD or ALD.
- liquid precursors may be introduced to a processing chamber or a reactant may be introduced to deposit the semiconductor film by spin-on, sol-gel, or plating processes.
- the semiconductor film may be used in various devices such as TFTs, OLEDs, and solar panels to name a few.
- the semiconductor film may be deposited onto any number of substrates such as silicon wafers, glass substrates, soda lime glass substrates, plastic substrates, etc.
- the substrates may comprise any shape or size such as 200 mm wafers, 300 mm wafers, 400 mm wafers, flat panel substrates, polygonal substrates, roll-to-roll substrates, etc.
- the semiconductor film may be amorphous. In one embodiment, the semiconductor film may be crystalline.
- the semiconductor film may also be annealed after depositing.
- Nitrogen containing gas to oxygen containing gas flow ratios of about 10:1 to about 50:1 may produce semiconductor films having a mobility greater than 20 times the mobility of amorphous silicon and 2 times the mobility of polysilicon.
- the nitrogen containing gas to oxygen containing gas flow ratios may be between about 5:1 to about 10:1.
- Annealing the deposited semiconductor film may increase the mobility of the film to more than 90 cm 2 /V-s. The annealing may occur in a nitrogen atmosphere at a temperature of about 400 degrees Celsius. At high temperatures such as about 600 degrees Celsius, the semiconductor film may be converted to a p-type from an n-type semiconductor film. The semiconductor film is stable and may develop a natural passivation layer thereon over a period of time.
- the passivation layer may extend to a depth of less than about 25 Angstroms.
- the deposited semiconductor film may have a band gap of between about 3.1 eV to about 1.2 eV, which equates to about 400 nm to about 1 ,000 nm wavelength. Due to the lower band gap, the semiconductor film may be useful for photovoltaic devices.
- the band gap may be adjusted by altering the deposition parameters such as nitrogen to oxygen flow ratio, power density, pressure, annealing, and deposition temperature. By increasing the amount of oxygen supplied relative to the nitrogen, the band gap may be increased.
- the band gap energy within the semiconductor film may be graded to fine tune the band gap throughout the film.
- the band gap distribution may be controlled.
- a semiconductor film comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, gallium, cadmium, and tin may be more stable and have a higher mobility than amorphous silicon and poly silicon.
- the semiconductor film may replace silicon as the dominate semiconductor material in electronic devices.
Abstract
The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.
Description
THIN FILM METAL OXYNITRIDE SEMICONDUCTORS
BACKGROUND OF THE INVENTION Field of the Invention
[0001] Embodiments of the present invention generally relate to a semiconductor material and a method for depositing the semiconductor material.
Description of the Related Art
[0002] The electron mobility of a semiconductor layer has a very strong effect on the speed of the device and the current which may be driven through the device. The higher the electron mobility, the faster the speed of the device and the higher the source-drain current under the same voltage. In recent years, amorphous silicon and polysilicon have been the semiconductor materials of choice for field effect thin film transistors (TFTs), for backplane to drive liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, quantum dot displays, and building solar cell panels. Amorphous silicon may have an electron mobility as high as about 1 cm2/V- s. Low temperature polysilicon may have an electron mobility higher than 50 cm2/V- s, but requires a complicated process step such as laser annealing to achieve the electron mobility. Therefore, the cost of producing polysilicon with an electron mobility higher than 50 cm2/V-s is very high and not suitable for large area substrate applications.
[0003] In a field effect transistor (FET), the semiconductor material creates the channel between the source and drain electrodes. Without a voltage supply to the gate electrode, no current may go through the source-drain electrode even with a voltage between the source-drain electrodes. As voltage is supplied to the gate electrode, mobile electrons inside the semiconductor layer will accumulate in the area very close to the interface between the gate dielectric layer and the semiconductor layer. The semiconductor layer becomes conductive, and electrodes may go through the source-drain electrode easily with a low voltage between the source-drain electrodes. High mobility of the semiconductor materials indicates the mobile electrons in the semiconductor are more sensitive to the electric field created
by the gate electrode, and the semiconductor channel becomes more conductive. The semiconductor material determines the current which may go through the semiconductor channel influenced by voltage applied across the gate and source terminals. The greater the mobility of the semiconductor material, the less voltage is needed to achieve the current required across the FET.
[0004] Amorphous silicon may rely upon hydrogen passivation to achieve a desired mobility in a TFT. The amorphous silicon may be deposited by chemical vapor deposition (CVD) at temperatures up to about 350 degrees Celsius. The hydrogen passivation, while helping the amorphous silicon achieve the desired mobility, may not be stable such that a TFT's threshold voltage may change with time under gate electrode voltage and under relatively high temperatures created by the device itself.
[0005] Therefore, there is a need in the art for a stable semiconductor material having sufficiently high mobility not only on glass substrates with high process temperatures, but also on plastic substrates and other flexible substrates.
SUMMARY OF THE INVENTION
[0006] The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.
[0007] In one embodiment, a sputtering method comprises flowing an oxygen containing gas and a nitrogen containing gas into a processing chamber, applying
an electrical bias to a sputtering target comprising one or more metals selected from the group consisting of gallium, cadmium, indium, and tin, and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more metals, oxygen, and nitrogen.
[0008] In another embodiment, a semiconductor material comprises nitrogen, oxygen, and one or more elements selected from the group consisting of gallium, cadmium, indium, and tin. In another embodiment, a semiconductor material comprises oxygen, nitrogen, and one or more elements having a filled s orbital and a filled d orbital.
[0009] In another embodiment, a semiconductor layer deposition method comprises introducing an oxygen containing precursor, a nitrogen containing precursor, and at least one precursor selected from the group consisting of a gallium precursor, a cadmium precursor, a tin precursor, and an indium precursor to a processing chamber and depositing a semiconductor layer on a substrate disposed in the processing chamber, the semiconductor layer comprising oxygen, nitrogen, and at least one element selected from the group consisting of gallium, cadmium, tin, and indium.
[0010] In another embodiment, a semiconductor layer deposition method comprises flowing an oxygen containing gas and a nitrogen containing gas into a processing chamber, applying an electrical bias to a sputtering target comprising one or more elements having a filled s orbital and a filled d orbital, and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more elements, oxygen, and nitrogen.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are
therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
[0012] Figure 1 is a schematic cross sectional view of a sputtering chamber that may be used to deposit the semiconductor film according to one embodiment of the invention.
[0013] Figure 2A is a graph showing the effect of nitrogen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen.
[0014] Figure 2B is a graph showing the effect of oxygen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen.
[0015] Figures 3A and 3B and XRD graphs showing the film structure of a semiconductor film containing tin, nitrogen, and oxygen.
DETAILED DESCRIPTION
[0016] The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.
[0017] A reactive sputtering method is illustratively described and may be practiced in a PVD chamber for processing large area substrates, such as a 4300 PVD chamber, available from AKT, a subsidiary of Applied Materials, Inc., Santa Clara, California. However, because the semiconductor film produced according to the method may be determined by the film structure and composition, it should be
understood that the reactive sputtering method may have utility in other system configurations, including those systems configured to process large area round substrates and those systems produced by other manufacturers, including roll-to-roll process platforms. It is also to be understood that while the invention is illustratively described below as deposited by PVD, other methods including chemical vapor deposition (CVD), atomic layer deposition (ALD), or spin-on processes may be utilized to deposit the inventive films.
[0018] Figure 1 is a cross-sectional schematic view of a PVD chamber 100 according to one embodiment of the invention. The chamber 100 may be evacuated by a vacuum pump 114. Within the chamber 100, a substrate 102 may be disposed opposite a target 104. The substrate may be disposed on a susceptor 106 within the chamber 100. The susceptor 106 may be elevated and lowered as shown by arrows "A" by an actuator 112. The susceptor 106 may be elevated to raise the substrate 102 to a processing position and lowered so that the substrate 102 may be removed from the chamber 100. Lift pins 108 elevate the substrate 102 above the susceptor 106 when the susceptor 106 is in the lowered position. Grounding straps 110 may ground the susceptor 106 during processing. The susceptor 106 may be raised during processing to aid in uniform deposition. The temperature of the susceptor 106 may be maintained within a range of about room temperature to about 400 degrees Celsius. In one embodiment, the temperature of the susceptor 106 may be maintained between about 25 degrees Celsius and about 250 degrees Celsius.
[0019] The target 104 may comprise one or more targets 104. In one embodiment, the target 104 may comprise a large area sputtering target 104. In another embodiment, the target 104 may comprise a plurality of tiles. In yet another embodiment, the target 104 may comprise a plurality of target strips. In still another embodiment, the target 104 may comprise one or more cylindrical, rotary targets. The target 104 may be bonded to a backing plate 116 by a bonding layer (not shown). One or more magnetrons 118 may be disposed behind the backing plate 116. The magnetrons 118 may scan across the backing plate 116 in a linear
movement or in a two dimensional path. The walls of the chamber may be shielded from deposition by a dark space shield 120 and a chamber shield 122.
[0020] To help provide uniform sputtering deposition across a substrate 102, an anode 124 may be placed between the target 104 and the substrate 102. In one embodiment, the anode 124 may be bead blasted stainless steel coated with arc sprayed aluminum. In one embodiment, one end of the anode 124 may be mounted to the chamber wall by a bracket 130. The anode 124 provides a charge in opposition to the target 104 so that charged ions will be attracted thereto rather than to the chamber walls which are typically at ground potential. By providing the anode 124 between the target 104 and the substrate 102, the plasma may be more uniform, which may aid in the deposition. To reduce flaking, a cooling fluid may be provided through the one or more anodes 124. By reducing the amount of expansion and contraction of the anodes 124, flaking of material from the anodes 124 may be reduced. For smaller substrates and hence, smaller processing chambers, the anodes 124 spanning the processing space may not be necessary as the chamber walls may be sufficient to provide a path to ground and a uniform plasma distribution.
[0021] For reactive sputtering, it may be beneficial to provide a reactive gas into the chamber 100. One or more gas introduction tubes 126 may also span the distance across the chamber 100 between the target 104 and the substrate 102. For smaller substrates and hence, smaller chambers, the gas introduction tubes 126 spanning the processing space may not be necessary as an even gas distribution may be possible through conventional gas introduction means. The gas introduction tubes 126 may introduce sputtering gases from a gas panel 132. The gas introduction tubes 126 may be coupled with the anodes 124 by one or more couplings 128. The coupling 128 may be made of thermally conductive material to permit the gas introduction tubes 126 to be conductively cooled. Additionally, the coupling 128 may be electrically conductive as well so that the gas introduction tubes 126 are grounded and function as anodes.
[0022] The reactive sputtering process may comprise disposing a metallic sputtering target opposite a substrate in a sputtering chamber. The metallic sputtering target may substantially comprise one or more elements selected from the group consisting of zinc, gallium, indium, tin, and cadmium. In one embodiment, the sputtering target may comprise one or more elements having a filled s orbital and a filled d orbital. In another embodiment, the sputtering target may comprise one or more elements having a filled f orbital. In another embodiment, the sputtering target may comprise one or more divalent elements. In another embodiment, the sputtering target may comprise one or more trivalent elements. In still another embodiment, the sputtering target may comprise one or more tetravalent elements.
[0023] The sputtering target may also comprise a dopant. Suitable dopants that may be used include Al, Sn, Ga, Ca, Si, Ti, Cu, Ge, In, Ni, Mn, Cr, V, Mg, SixNy, AIxOy, and SiC. In one embodiment, the dopant comprises aluminum. In another embodiment, the dopant comprises tin. The substrate, on the other hand, may comprise plastic, paper, polymer, glass, stainless steel, and combinations thereof. When the substrate is plastic, the reactive sputtering may occur at temperatures below about 180 degrees Celsius. Examples of semiconductor films that may be deposited include ZnOxNy:AI, ZnOxNy:Sn, SnOxNy:AI, lnOxNy:AI, lnOxNy:Sn, CdOxNy:AI, CdOxNy:Sn, GaOxNy:AI, GaOxNy:Sn, ZnSnOxNy:AI ZnlnOxNy:AI, ZnlnOxNy:Sn, ZnCdOxNy:AI, ZnCdOxNy:Sn, ZnGaOxNy:AI, ZnGaOxNy:Sn, SnlnOxNy:AI, SnCdOxNy:AI, SnGaOxNy:AI, lnCdOxNy:AI, lnCdOxNy:Sn, lnGaOxNy:AI, lnGaOxNy:Sn, CdGaOxNy:AI, CdGaOxNy:Sn, ZnSnlnOxNy:AI, ZnSnCdOxNy:AI, ZnSnGaOxNy:AI, ZnlnCdOxNy:AI, ZnlnCdOxNy:Sn, ZnlnGaOxNy:AI, ZnlnGaOxNy:Sn, ZnCdGaOxNy:AI, ZnCdGaOxNy:Sn, SnlnCdOxNy:AI, SnlnGaOxNy:AI,
SnCdGaOxNy:AI, lnCdGaOxNy:AI, lnCdGaOxNy:Sn, ZnSnlnCdOxNy:AI, ZnSnlnGaOxNy:AI, ZnlnCdGaOxNy:AI, ZnlnCdGaOxNy:Sn, and SnlnCdGaOxNy:AI.
[0024] During the sputtering process, argon, a nitrogen containing gas, and an oxygen containing gas may be provided to the chamber for reactive sputtering the metallic target. Additional additives such as B2H6, CO2, CO, CH4, and combinations thereof may also be provided to the chamber during the sputtering. In one
embodiment, the nitrogen containing gas comprises N2. In another embodiment, the nitrogen containing gas comprises N2O, NH3, or combinations thereof. In one embodiment, the oxygen containing gas comprises O2. In another embodiment, the oxygen containing gas comprises N2O. The nitrogen of the nitrogen containing gas and the oxygen of the oxygen containing gas react with the metal from the sputtering target to form a semiconductor material comprising metal, oxygen, nitrogen, and optionally a dopant on the substrate. In one embodiment, the nitrogen containing gas and the oxygen containing gas are separate gases. In another embodiment, the nitrogen containing gas and the oxygen containing gas comprise the same gas.
[0025] The film deposited is a semiconductor film. Examples of semiconductor films that may be deposited include ZnOxNy, SnOxNy, InOxNy, CdOxNy, GaOxNy, ZnSnOxNy, ZnInOxNy, ZnCdOxNy, ZnGaOxNy, SnInOxNy, SnCdOxNy, SnGaOxNy, InCdOxNy, InGaOxNy, CdGaOxNy, ZnSnInOxNy, ZnSnCdOxNy, ZnSnGaOxNy, ZnInCdOxNy, ZnInGaOxNy, ZnCdGaOxNy, SnInCdOxNx, SnInGaOxNy, SnCdGaOxNy, InCdGaOxNy, ZnSnInCdOxNy, ZnSnInGaOxNx, ZnInCdGaOxNy, and SnInCdGaOxNy. Each of the aforementioned semiconductor films may be doped by a dopant.
[0026] The semiconductor film may comprise an oxynitride compound. In one embodiment, the semiconductor film comprises both a metal oxynitride compound as well as a metal nitride compound. In another embodiment, the semiconductor film may comprise a metal oxynitride compound, a metal nitride compound, and a metal oxide compound. In still another embodiment, the semiconductor film may comprise a metal oxynitride compound and a metal oxide compound. In another embodiment, the semiconductor film may comprise a metal nitride compound and a metal oxide compound.
[0027] The ratio of the nitrogen containing gas to the oxygen containing gas may affect the mobility, carrier concentration, and resistivity of the semiconductor film. Table I shows the effect of the nitrogen flow rate on the mobility, resistivity, and carrier concentration for a tin target sputtered in an atmosphere of argon and nitrogen gas. Generally, Table I shows that when the nitrogen flow rate increases, the mobility also increases. The argon and oxygen flow rates may remain the same.
In Table I, the argon flow rate is 60 seem and the oxygen flow rate is 5 seem. The higher substrate temperature also provides an increase in mobility. The carrier concentration is weakly correlated with the mobility. The deposited film is an n-type semiconductor material which may function as an electron carrier and hence, the carrier concentration is shown as a negative number.
Table I
[0028] The oxygen containing gas also affects the mobility, carrier concentration, and resistivity of the semiconductor film. Table Il shows the effect of the oxygen flow rate on the mobility, resistivity, and carrier concentration for a tin target sputtered in an atmosphere of argon, nitrogen gas, and oxygen gas. The argon flow rate may remain the same. In Table II, the argon flow rate is 60 seem. Generally, Table Il shows that for high nitrogen gas to oxygen gas ratios, the mobility may be higher than the mobility for amorphous silicon. Additionally, the higher the ratio of nitrogen to oxygen, the lower the carrier concentration. At a 200 seem nitrogen flow rate, the mobility increases as the oxygen flow rate increase, but then decreases at higher oxygen flow rates. In one embodiment, the mobility may be between about 4 cm2/V-s and about 10 cm2/V-s at a temperature of 150 degrees Celsius. The
increase in mobility is not correlated to the carrier concentration. Thus, the mobility improvement may be a result of less scattering of the carrier. The mobility may be very low if no nitrogen additives are used. In such a scenario, the carrier concentration drops significantly as the oxygen gas flow increases. The higher the substrate temperature for a tin target, the better the mobility. In one embodiment, the pressure may be between about 5 mTorr to about 20 mTorr.
Table Il
[0029] The amount of dopant may also affect the mobility of the deposited film. However, the mobility will still generally increase with an increase of nitrogen gas flow whether the target is doped or not. Table III shows the effect of dopant upon the mobility, carrier concentration, and resistivity. The dopant is shown in weight percentage. The argon flow rate may be the same for each deposited film. In Table III, the argon flow rate is 120 seem. The carrier concentration when utilizing a dopant may be lower than in the scenario where no dopant is used. Thus, the dopant may be used to tune the carrier concentration.
Table III
[0030] Table IV discloses the effect of oxygen gas flow on the mobility, carrier concentration, and resistivity of the semiconductor film. Generally, under a fixed nitrogen gas flow, the mobility of the film will increase as the oxygen flow increases, but drop with a further increase in oxygen flow rate. The argon flow rate may be the same for each deposited film. In Table III, the argon flow rate is 120 seem. In one embedment, the mobility of the film will decrease once the nitrogen containing gas to oxygen containing gas ratio is less than about 10:1. The increase in mobility does not relate to an increase in carrier concentration as the oxygen flow rate increases. When a dopant is used, the mobility and carrier concentration may be lowered. Thus, the carrier concentration and mobility may be tuned with the amount of dopant present.
Table IV
[0031] Table V shows the affect of the power density applied on the mobility, carrier concentration, and resistivity of the semiconductor film. Generally, the power density does not greatly affect the mobility, but the higher the power density, the higher the carrier concentration and resistivity. In one embodiment, the power density applied to the sputtering target may be between about 0.3 W/cm2 and about 1.0 W/cm2.
Table V
[0032] Table Vl shows the effects of utilizing N2O as the oxygen containing gas in depositing the semiconductor film. The N2O gas is effective as an oxygen containing gas in raising the mobility of the semiconductor film and producing a reasonably low carrier concentration.
Table Vl
[0033] Table VII show the chemical analysis for a semiconductor film that comprises tin, oxygen, and nitrogen and shows the effect of oxygen containing gas upon the film using X-ray photoelectron spectroscopy (XPS). Film 1 was deposited by sputtering a tin target for 360 seconds while a DC bias of 400 W was applied to the sputtering target. Argon was introduced to the processing chamber at a flow rate of 60 seem, nitrogen was introduced at a flow rate of 200 seem, and oxygen was introduced at a flow rate of 5 seem. The deposition occurred at a temperature of 250 degrees Celsius. Film 1 had a carbon content of Film 1 was 22.5 atomic percent, a nitrogen content of 19.4 atomic percent, an oxygen content of 29.4 atomic percent, a fluorine content of 0.7 atomic percent, and a tin content of 28.1 atomic percent. Most, if not all, of the carbon could arise from adventitious carbon (Ae., carbon compounds adsorbed onto the surface of any sample exposed to the atmosphere). Film 2 was deposited by sputtering a tin target for 360 seconds while a DC bias of 400 W was applied to the sputtering target. Argon was introduced to the processing chamber at a flow rate of 60 seem, nitrogen was introduced at a flow rate of 200 seem, and oxygen was introduced at a flow rate of 20 seem. The deposition occurred at a temperature of 250 degrees Celsius. Film 2 had a carbon content of 17.3 atomic percent, a nitrogen content of 4.5 atomic percent, an oxygen content of 49.9 atomic percent, a fluorine content of 0.6 percent, and a tin content of 27.7 atomic percent. Most, if not all, of the carbon could arise from adventitious carbon (Ae., carbon compounds adsorbed onto the surface of any sample exposed to the atmosphere). As shown in Table VII, as the oxygen flow rate (and hence, the ratio of oxygen to nitrogen) increases, the oxynitride content increases as well as does the tin oxide content. However, the tin nitride content and silicon oxynitride content is reduced. In Table VII, R equals oxygen or nitrogen.
Table VII
[0034] Table VIII shows the results for several semiconductor films that were deposited by sputtering. The semiconductor films comprised zinc, tin, oxygen, and nitrogen. The semiconductor films were sputter deposited from a sputtering target having a zinc content of 70 atomic percent and a tin content of 30 atomic percent. The deposition occurred at a temperature of 250 degrees Celsius with a power of 400 W applied to the sputtering target. The deposition occurred for 360 seconds under an argon flow rate of 60 seem and an oxygen flow rate of 20 seem. The data
shows that the mobility of the semiconductor film increases as the nitrogen flow rate (and hence, the ratio of nitrogen gas to oxygen gas) increases.
Table VIII
[0035] Figure 2A is a graph showing the effect of nitrogen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen. The nitrogen gas moves the optical adsorption edge toward a short wavelength or a larger band gap. The increased nitrogen flow rate may cause the film to be more transparent in the visible range.
[0036] Figure 2B is a graph showing the effect of oxygen flow rate on the transmittance of a semiconductor film having tin, oxygen, and nitrogen. The greater the oxygen flow rate, the more the absorption edge moves to the shorter wavelength or a larger band gap. The absorption edge will move towards the shorter wavelength at higher temperatures.
[0037] Figures 3A and 3B and XRD graphs showing the film structure of a semiconductor film containing tin, nitrogen, and oxygen. The film structure changes from the metal tin crystal structure to an amorphous structure as the ratio of nitrogen to oxygen increases. Figure 3A shows the results for a 250 degrees Celsius deposition. Figure 3B shows the results for a 150 degrees Celsius deposition.
[0038] While the semiconductor film is described as being deposited by sputtering a metal target that may contain a dopant, it is to be understood that other deposition methods may be utilized. In one embodiment, the sputtering target may containing the metal, oxygen, and nitrogen and be biased with an RF current. In another embodiment, precursor gases may be introduced to a processing chamber to deposit the semiconductor film by CVD or ALD. In another embodiment, liquid precursors may be introduced to a processing chamber or a reactant may be introduced to deposit the semiconductor film by spin-on, sol-gel, or plating processes.
[0039] The semiconductor film may be used in various devices such as TFTs, OLEDs, and solar panels to name a few. The semiconductor film may be deposited onto any number of substrates such as silicon wafers, glass substrates, soda lime glass substrates, plastic substrates, etc. The substrates may comprise any shape or size such as 200 mm wafers, 300 mm wafers, 400 mm wafers, flat panel substrates, polygonal substrates, roll-to-roll substrates, etc. The semiconductor film may be amorphous. In one embodiment, the semiconductor film may be crystalline. The semiconductor film may also be annealed after depositing.
[0040] Nitrogen containing gas to oxygen containing gas flow ratios of about 10:1 to about 50:1 may produce semiconductor films having a mobility greater than 20 times the mobility of amorphous silicon and 2 times the mobility of polysilicon. In one embodiment, the nitrogen containing gas to oxygen containing gas flow ratios may be between about 5:1 to about 10:1. Annealing the deposited semiconductor film may increase the mobility of the film to more than 90 cm2/V-s. The annealing may occur in a nitrogen atmosphere at a temperature of about 400 degrees Celsius. At high temperatures such as about 600 degrees Celsius, the semiconductor film may be converted to a p-type from an n-type semiconductor film. The semiconductor film is stable and may develop a natural passivation layer thereon over a period of time. The passivation layer may extend to a depth of less than about 25 Angstroms.
[0041] The deposited semiconductor film may have a band gap of between about 3.1 eV to about 1.2 eV, which equates to about 400 nm to about 1 ,000 nm wavelength. Due to the lower band gap, the semiconductor film may be useful for photovoltaic devices. The band gap may be adjusted by altering the deposition parameters such as nitrogen to oxygen flow ratio, power density, pressure, annealing, and deposition temperature. By increasing the amount of oxygen supplied relative to the nitrogen, the band gap may be increased. The band gap energy within the semiconductor film may be graded to fine tune the band gap throughout the film. For example, it may be desirable to have a higher band gap energy near the surface of the semiconductor layer and then adjust the band gap energy throughout the thickness of the layer. By controlling the proportionate amount of oxygen gas flow relative to the amount of nitrogen and argon, the band gap distribution may be controlled.
[0042] A semiconductor film comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, gallium, cadmium, and tin may be more stable and have a higher mobility than amorphous silicon and poly silicon. Thus, the semiconductor film may replace silicon as the dominate semiconductor material in electronic devices.
[0043] While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims
1. A sputtering method, comprising: flowing an oxygen containing gas, and inert gas, and a nitrogen containing gas into a processing chamber; applying an electrical bias to a sputtering target comprising one or more metals selected from the group consisting of gallium, cadmium, indium, and tin; and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more metals, oxygen, and nitrogen.
2. The method of claim 1 , wherein the semiconductor layer comprises two or more metals selected from the group consisting of zinc, gallium, cadmium, indium, and tin.
3. The method of claim 1 , further comprising a dopant selected from the group consisting of aluminum, tin, and combinations thereof.
4. The method of claim 1 , wherein the nitrogen containing gas and the oxygen containing gas are separate gases.
5. A semiconductor material, comprising nitrogen, oxygen, and one or more elements selected from the group consisting of gallium, cadmium, indium, and tin.
6. The semiconductor material of claim 5, wherein the semiconductor material comprises two or more metals selected from the group consisting of zinc, gallium, cadmium, indium, and tin.
7. The semiconductor material of claim 5, further comprising a dopant selected from the group consisting of aluminum, tin, and combinations thereof. .
8. The semiconductor material of claim 5, wherein at least a portion of the semiconductor layer comprises an oxynitride compound and a nitride compound.
9. The semiconductor material of claim 5, wherein the semiconductor material is amorphous or has a nanocrystalline structure.
10. A semiconductor layer deposition method, comprising: introducing an oxygen containing precursor, a nitrogen containing precursor, and at least one precursor selected from the group consisting of a gallium precursor, a cadmium precursor, a tin precursor, and an indium precursor to a processing chamber; and depositing a semiconductor layer on a substrate disposed in the processing chamber, the semiconductor layer comprising oxygen, nitrogen, and at least one element selected from the group consisting of gallium, cadmium, tin, and indium.
11. The method of claim 10, wherein the semiconductor layer comprises two or more metals selected from the group consisting of zinc, gallium, cadmium, indium, and tin.
12. The method of claim 10, further comprising a dopant selected from the group consisting of aluminum, tin, and combinations thereof.
13. The method of claim 10, wherein at least a portion of the semiconductor layer comprises an oxynitride compound and a nitride compound.
14. A semiconductor layer deposition method, comprising: flowing an oxygen containing gas and a nitrogen containing gas into a processing chamber; applying an electrical bias to a sputtering target comprising one or more elements having a filled s orbital and a filled d orbital; and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more elements, oxygen, and nitrogen.
15. The method of claim 14, wherein the semiconductor layer is amorphous or has a nanocrystalline structure.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/049,017 US8980066B2 (en) | 2008-03-14 | 2008-03-14 | Thin film metal oxynitride semiconductors |
US12/049,017 | 2008-03-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009114362A1 true WO2009114362A1 (en) | 2009-09-17 |
Family
ID=41063496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2009/036035 WO2009114362A1 (en) | 2008-03-14 | 2009-03-04 | Thin film metal oxynitride semiconductors |
Country Status (3)
Country | Link |
---|---|
US (1) | US8980066B2 (en) |
TW (2) | TWI435943B (en) |
WO (1) | WO2009114362A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011146109A3 (en) * | 2010-05-17 | 2012-04-05 | Mount Sinai School Of Medicine | Methods and assays for treating subjects with shank3 deletion, mutation or reduced expression |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5222281B2 (en) * | 2006-04-06 | 2013-06-26 | アプライド マテリアルズ インコーポレイテッド | Reactive sputtering of zinc oxide transparent conductive oxide on large area substrates |
US7927713B2 (en) | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
KR101536101B1 (en) | 2007-08-02 | 2015-07-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Thin film transistors using thin film semiconductor materials |
US8980066B2 (en) | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
JP5489859B2 (en) * | 2009-05-21 | 2014-05-14 | 株式会社半導体エネルギー研究所 | Conductive film and method for manufacturing conductive film |
JP2011014884A (en) * | 2009-06-05 | 2011-01-20 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion device |
US7988470B2 (en) * | 2009-09-24 | 2011-08-02 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch |
US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
US9850576B2 (en) * | 2010-02-15 | 2017-12-26 | Applied Materials, Inc. | Anti-arc zero field plate |
IN2012DN06575A (en) * | 2010-03-04 | 2015-10-23 | Panasonic Corp | |
WO2013106621A1 (en) * | 2012-01-12 | 2013-07-18 | First Solar, Inc | Method and system of providing dopant concentration control in different layers of a semiconductor device |
EP2738815B1 (en) * | 2012-11-30 | 2016-02-10 | Samsung Electronics Co., Ltd | Semiconductor materials, transistors including the same, and electronic devices including transistors |
CN103500710B (en) * | 2013-10-11 | 2015-11-25 | 京东方科技集团股份有限公司 | A kind of thin-film transistor manufacture method, thin-film transistor and display device |
US10991579B2 (en) * | 2018-05-02 | 2021-04-27 | Applied Materials, Inc. | Methods of making and using tin oxide film with smooth surface morphologies from sputtering target including tin and dopant |
JP7183917B2 (en) * | 2019-03-29 | 2022-12-06 | 株式会社デンソー | Sputtering device and semiconductor device manufacturing method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5429983A (en) * | 1993-12-27 | 1995-07-04 | Fujitsu Limited | Method of manufacturing semiconductor device |
US20020098616A1 (en) * | 1999-10-29 | 2002-07-25 | Kordesch Martin E. | Band gap engineering of amorphous A1-Ga-N alloys |
US20050136656A1 (en) * | 2003-12-19 | 2005-06-23 | Zeng Xian T. | Process for depositing composite coating on a surface |
Family Cites Families (95)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4331737A (en) * | 1978-04-01 | 1982-05-25 | Zaidan Hojin Handotai Kenkyu Shinkokai | Oxynitride film and its manufacturing method |
ZA849070B (en) | 1983-12-07 | 1985-07-31 | Energy Conversion Devices Inc | Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures |
FR2579754B1 (en) * | 1985-04-02 | 1987-07-31 | Centre Nat Rech Scient | NITRIDES AND OXYNITRIDES USEFUL AS SELECTIVE DETECTORS OF REDUCING GASES IN THE ATMOSPHERE, AND DETECTION DEVICE CONTAINING THEM |
US4769291A (en) * | 1987-02-02 | 1988-09-06 | The Boc Group, Inc. | Transparent coatings by reactive sputtering |
US4816082A (en) * | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
FR2638527B1 (en) * | 1988-11-02 | 1991-02-01 | Centre Nat Rech Scient | GALLIUM NITRIDE AND OXYNITRIDES USEFUL AS SELECTIVE DETECTORS OF REDUCING GASES IN THE ATMOSPHERE, PROCESS FOR THEIR PREPARATION, AND DETECTION DEVICE CONTAINING THEM |
JPH02240637A (en) | 1989-03-15 | 1990-09-25 | Matsushita Electric Ind Co Ltd | Liquid crystal image display device and production thereof |
CA2034118A1 (en) * | 1990-02-09 | 1991-08-10 | Nang Tri Tran | Solid state radiation detector |
JP2999280B2 (en) * | 1991-02-22 | 2000-01-17 | キヤノン株式会社 | Photovoltaic element |
JP3255942B2 (en) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | Method for manufacturing inverted staggered thin film transistor |
JP2994812B2 (en) * | 1991-09-26 | 1999-12-27 | キヤノン株式会社 | Solar cell |
US5346601A (en) * | 1993-05-11 | 1994-09-13 | Andrew Barada | Sputter coating collimator with integral reactive gas distribution |
TW273067B (en) * | 1993-10-04 | 1996-03-21 | Tokyo Electron Co Ltd | |
JPH07131030A (en) * | 1993-11-05 | 1995-05-19 | Sony Corp | Thin film semiconductor device for display and fabrication thereof |
JP3571785B2 (en) * | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | Method and apparatus for forming deposited film |
US5620523A (en) * | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
US5668663A (en) * | 1994-05-05 | 1997-09-16 | Donnelly Corporation | Electrochromic mirrors and devices |
US5700699A (en) * | 1995-03-16 | 1997-12-23 | Lg Electronics Inc. | Method for fabricating a polycrystal silicon thin film transistor |
JP3306258B2 (en) * | 1995-03-27 | 2002-07-24 | 三洋電機株式会社 | Method for manufacturing semiconductor device |
JP3169337B2 (en) * | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | Photovoltaic element and method for manufacturing the same |
US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
US5716480A (en) * | 1995-07-13 | 1998-02-10 | Canon Kabushiki Kaisha | Photovoltaic device and method of manufacturing the same |
JP3625598B2 (en) * | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | Manufacturing method of liquid crystal display device |
US6153013A (en) * | 1996-02-16 | 2000-11-28 | Canon Kabushiki Kaisha | Deposited-film-forming apparatus |
EP0827213A3 (en) * | 1996-08-28 | 1999-05-19 | Canon Kabushiki Kaisha | Photovoltaic device |
US6159763A (en) * | 1996-09-12 | 2000-12-12 | Canon Kabushiki Kaisha | Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element |
US5993594A (en) * | 1996-09-30 | 1999-11-30 | Lam Research Corporation | Particle controlling method and apparatus for a plasma processing chamber |
US6432203B1 (en) * | 1997-03-17 | 2002-08-13 | Applied Komatsu Technology, Inc. | Heated and cooled vacuum chamber shield |
US6238527B1 (en) * | 1997-10-08 | 2001-05-29 | Canon Kabushiki Kaisha | Thin film forming apparatus and method of forming thin film of compound by using the same |
JP4208281B2 (en) * | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | Multilayer photovoltaic device |
DE69936526T3 (en) * | 1998-06-01 | 2009-06-25 | Kaneka Corp. | SILICON THIN LAYER PHOTOELECTRIC DEVICE |
EP2264771A3 (en) * | 1998-12-03 | 2015-04-29 | Semiconductor Energy Laboratory Co., Ltd. | MOS thin film transistor and method of fabricating same |
US20020084455A1 (en) * | 1999-03-30 | 2002-07-04 | Jeffery T. Cheung | Transparent and conductive zinc oxide film with low growth temperature |
KR100590925B1 (en) | 1999-07-30 | 2006-06-19 | 비오이 하이디스 테크놀로지 주식회사 | method for manufacturing the TFT- LCD |
US6228236B1 (en) * | 1999-10-22 | 2001-05-08 | Applied Materials, Inc. | Sputter magnetron having two rotation diameters |
WO2002043466A2 (en) * | 2000-11-30 | 2002-06-06 | North Carolina State University | Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
KR100491141B1 (en) | 2001-03-02 | 2005-05-24 | 삼성에스디아이 주식회사 | TFT and Method for Fabricating the Same and Active Matrix display device and Method for fabricating the Same using the TFT |
WO2002073313A1 (en) * | 2001-03-13 | 2002-09-19 | University Of Utah | Structured organic materials and devices using low-energy particle beams |
US6740938B2 (en) * | 2001-04-16 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Transistor provided with first and second gate electrodes with channel region therebetween |
JP4560245B2 (en) * | 2001-06-29 | 2010-10-13 | キヤノン株式会社 | Photovoltaic element |
US20030049464A1 (en) * | 2001-09-04 | 2003-03-13 | Afg Industries, Inc. | Double silver low-emissivity and solar control coatings |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
US7189992B2 (en) | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
JP2004363560A (en) * | 2003-05-09 | 2004-12-24 | Seiko Epson Corp | Substrate, device, process for fabricating device, process for producing active matrix substrate,electrooptic device and electronic apparatus |
EP1624494A4 (en) * | 2003-05-13 | 2007-10-10 | Asahi Glass Co Ltd | Transparent conductive substrate for solar battery and method for producing same |
TWI222753B (en) * | 2003-05-20 | 2004-10-21 | Au Optronics Corp | Method for forming a thin film transistor of an organic light emitting display |
JP4344270B2 (en) * | 2003-05-30 | 2009-10-14 | セイコーエプソン株式会社 | Manufacturing method of liquid crystal display device |
US20050017244A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
TWI224868B (en) * | 2003-10-07 | 2004-12-01 | Ind Tech Res Inst | Method of forming poly-silicon thin film transistor |
US7026713B2 (en) * | 2003-12-17 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Transistor device having a delafossite material |
US7297977B2 (en) * | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7145174B2 (en) * | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7122398B1 (en) * | 2004-03-25 | 2006-10-17 | Nanosolar, Inc. | Manufacturing of optoelectronic devices |
CA2562556C (en) | 2004-04-27 | 2011-07-05 | Toyota Jidosha Kabushiki Kaisha | Process for producing metal oxide particle and exhaust gas purifying catalyst |
US7158208B2 (en) * | 2004-06-30 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR100721555B1 (en) * | 2004-08-13 | 2007-05-23 | 삼성에스디아이 주식회사 | Bottom gate thin film transistor and method fabricating thereof |
US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
US7622338B2 (en) * | 2004-08-31 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN1293606C (en) | 2004-09-30 | 2007-01-03 | 浙江大学 | Method or growing N-Al co-blended p type ZnO transistor film by two step method |
US7382421B2 (en) * | 2004-10-12 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Thin film transistor with a passivation layer |
US7601984B2 (en) * | 2004-11-10 | 2009-10-13 | Canon Kabushiki Kaisha | Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator |
JP2006144053A (en) * | 2004-11-17 | 2006-06-08 | Bridgestone Corp | METHOD FOR FORMING N-DOPED ZnO FILM |
US7309895B2 (en) * | 2005-01-25 | 2007-12-18 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7691666B2 (en) * | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7381586B2 (en) * | 2005-06-16 | 2008-06-03 | Industrial Technology Research Institute | Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution |
WO2006134777A1 (en) * | 2005-06-17 | 2006-12-21 | Olympus Corporation | Stirring container and analyzer |
US7628896B2 (en) * | 2005-07-05 | 2009-12-08 | Guardian Industries Corp. | Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same |
US7829471B2 (en) * | 2005-07-29 | 2010-11-09 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
US20070030569A1 (en) * | 2005-08-04 | 2007-02-08 | Guardian Industries Corp. | Broad band antireflection coating and method of making same |
JP4968660B2 (en) * | 2005-08-24 | 2012-07-04 | スタンレー電気株式会社 | Manufacturing method of ZnO-based compound semiconductor crystal and ZnO-based compound semiconductor substrate |
US20070068571A1 (en) * | 2005-09-29 | 2007-03-29 | Terra Solar Global | Shunt Passivation Method for Amorphous Silicon Thin Film Photovoltaic Modules |
EP1770788A3 (en) * | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
KR100785038B1 (en) * | 2006-04-17 | 2007-12-12 | 삼성전자주식회사 | Amorphous ZnO based Thin Film Transistor |
JP2007294709A (en) * | 2006-04-26 | 2007-11-08 | Epson Imaging Devices Corp | Electro-optical device, electronic equipment, and method for manufacturing electro-optical device |
JP4946156B2 (en) * | 2006-05-01 | 2012-06-06 | 富士ゼロックス株式会社 | SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, LIGHT RECEIVING DEVICE USING THE SEMICONDUCTOR FILM, ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY, PROCESS CARTRIDGE |
US20090023959A1 (en) * | 2006-06-16 | 2009-01-22 | D Amore Michael B | Process for making dibutyl ethers from dry 1-butanol |
KR101340514B1 (en) * | 2007-01-24 | 2013-12-12 | 삼성디스플레이 주식회사 | Thin film transistor substrate and method of fabricating the same |
KR100851215B1 (en) * | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | Thin film transistor and organic light-emitting dislplay device having the thin film transistor |
KR100982395B1 (en) * | 2007-04-25 | 2010-09-14 | 주식회사 엘지화학 | Thin film transistor and method for preparing the same |
CN101663762B (en) * | 2007-04-25 | 2011-09-21 | 佳能株式会社 | Oxynitride semiconductor |
US7927713B2 (en) * | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
JP5215589B2 (en) * | 2007-05-11 | 2013-06-19 | キヤノン株式会社 | Insulated gate transistor and display device |
US20080308411A1 (en) * | 2007-05-25 | 2008-12-18 | Energy Photovoltaics, Inc. | Method and process for deposition of textured zinc oxide thin films |
JP5241143B2 (en) * | 2007-05-30 | 2013-07-17 | キヤノン株式会社 | Field effect transistor |
US8372250B2 (en) * | 2007-07-23 | 2013-02-12 | National Science And Technology Development Agency | Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering |
KR101536101B1 (en) * | 2007-08-02 | 2015-07-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Thin film transistors using thin film semiconductor materials |
US20090212287A1 (en) * | 2007-10-30 | 2009-08-27 | Ignis Innovation Inc. | Thin film transistor and method for forming the same |
US8980066B2 (en) | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
WO2009117438A2 (en) * | 2008-03-20 | 2009-09-24 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
EP2184783B1 (en) * | 2008-11-07 | 2012-10-03 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and method for manufacturing the same |
US8436350B2 (en) * | 2009-01-30 | 2013-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device using an oxide semiconductor with a plurality of metal clusters |
TWI489628B (en) * | 2009-04-02 | 2015-06-21 | Semiconductor Energy Lab | Semiconductor device and method for manufacturing the same |
-
2008
- 2008-03-14 US US12/049,017 patent/US8980066B2/en not_active Expired - Fee Related
-
2009
- 2009-03-04 WO PCT/US2009/036035 patent/WO2009114362A1/en active Application Filing
- 2009-03-12 TW TW098108079A patent/TWI435943B/en not_active IP Right Cessation
- 2009-03-12 TW TW103112326A patent/TWI519659B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5429983A (en) * | 1993-12-27 | 1995-07-04 | Fujitsu Limited | Method of manufacturing semiconductor device |
US20020098616A1 (en) * | 1999-10-29 | 2002-07-25 | Kordesch Martin E. | Band gap engineering of amorphous A1-Ga-N alloys |
US20050136656A1 (en) * | 2003-12-19 | 2005-06-23 | Zeng Xian T. | Process for depositing composite coating on a surface |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011146109A3 (en) * | 2010-05-17 | 2012-04-05 | Mount Sinai School Of Medicine | Methods and assays for treating subjects with shank3 deletion, mutation or reduced expression |
Also Published As
Publication number | Publication date |
---|---|
TW201428115A (en) | 2014-07-16 |
US20090233424A1 (en) | 2009-09-17 |
US8980066B2 (en) | 2015-03-17 |
TW200951235A (en) | 2009-12-16 |
TWI435943B (en) | 2014-05-01 |
TWI519659B (en) | 2016-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8980066B2 (en) | Thin film metal oxynitride semiconductors | |
US10629581B2 (en) | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases | |
JP5718052B2 (en) | Thin film transistor using thin film semiconductor material | |
TW201431083A (en) | Thin film semiconductor device | |
US8840763B2 (en) | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09719981 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09719981 Country of ref document: EP Kind code of ref document: A1 |