WO2009120552A3 - Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor - Google Patents

Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor Download PDF

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Publication number
WO2009120552A3
WO2009120552A3 PCT/US2009/037520 US2009037520W WO2009120552A3 WO 2009120552 A3 WO2009120552 A3 WO 2009120552A3 US 2009037520 W US2009037520 W US 2009037520W WO 2009120552 A3 WO2009120552 A3 WO 2009120552A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing chambers
thin film
film transistor
tft
doped
Prior art date
Application number
PCT/US2009/037520
Other languages
French (fr)
Other versions
WO2009120552A2 (en
Inventor
Yan Ye
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2009120552A2 publication Critical patent/WO2009120552A2/en
Publication of WO2009120552A3 publication Critical patent/WO2009120552A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention generally relates to an integrated processing system and process sequence that may be used for thin film transistor (TFT) fabrication. In fabricating TFTs, numerous processes may be performed on a substrate to ultimately produce the desired TFT. These processes may be performed in numerous processing chambers that may be coupled to a common transfer chamber. The arrangement of the processing chambers and the sequence in which the substrate may pass through the processing chambers may affect the device performance. By placing specific processing chambers around a common transfer chamber, multiple processes may be performed without undue exposure of the TFT to atmosphere. Alternatively, by passing the substrate sequentially through specific processing chambers, multiple processes may be performed without undue exposure of the TFT to atmosphere.
PCT/US2009/037520 2008-03-24 2009-03-18 Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor WO2009120552A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3899908P 2008-03-24 2008-03-24
US61/038,999 2008-03-24

Publications (2)

Publication Number Publication Date
WO2009120552A2 WO2009120552A2 (en) 2009-10-01
WO2009120552A3 true WO2009120552A3 (en) 2009-11-19

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PCT/US2009/037520 WO2009120552A2 (en) 2008-03-24 2009-03-18 Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor

Country Status (3)

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US (1) US7879698B2 (en)
TW (1) TWI442574B (en)
WO (1) WO2009120552A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5222281B2 (en) * 2006-04-06 2013-06-26 アプライド マテリアルズ インコーポレイテッド Reactive sputtering of zinc oxide transparent conductive oxide on large area substrates
KR101536101B1 (en) 2007-08-02 2015-07-13 어플라이드 머티어리얼스, 인코포레이티드 Thin film transistors using thin film semiconductor materials
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
JP4707749B2 (en) * 2009-04-01 2011-06-22 東京エレクトロン株式会社 Substrate replacement method and substrate processing apparatus
US7988470B2 (en) * 2009-09-24 2011-08-02 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US9129868B2 (en) * 2009-11-04 2015-09-08 Cbrite Inc. Mask level reduction for MOFET
US8187929B2 (en) * 2009-11-04 2012-05-29 Cbrite, Inc. Mask level reduction for MOSFET
KR20120045178A (en) * 2010-10-29 2012-05-09 삼성전자주식회사 Thin film transistor and method of manufacturing the same
US20130078804A1 (en) * 2011-09-22 2013-03-28 Nanya Technology Corporation Method for fabricating integrated devices with reducted plasma damage
CN103500710B (en) * 2013-10-11 2015-11-25 京东方科技集团股份有限公司 A kind of thin-film transistor manufacture method, thin-film transistor and display device
EP3110772A1 (en) * 2014-02-28 2017-01-04 Nokia Technologies Oy Method and apparatus for oxidation of two-dimensional materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129698A (en) * 1995-10-30 1997-05-16 Kyocera Corp Semiconductor manufacturing equipment
US20070017445A1 (en) * 2005-07-19 2007-01-25 Takako Takehara Hybrid PVD-CVD system
JP2007150156A (en) * 2005-11-30 2007-06-14 Toppan Printing Co Ltd Transistor and method of manufacturing same

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331737A (en) * 1978-04-01 1982-05-25 Zaidan Hojin Handotai Kenkyu Shinkokai Oxynitride film and its manufacturing method
ZA849070B (en) 1983-12-07 1985-07-31 Energy Conversion Devices Inc Semiconducting multilayered structures and systems and methods for synthesizing the structures and devices incorporating the structures
US4769291A (en) * 1987-02-02 1988-09-06 The Boc Group, Inc. Transparent coatings by reactive sputtering
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
FR2638527B1 (en) * 1988-11-02 1991-02-01 Centre Nat Rech Scient GALLIUM NITRIDE AND OXYNITRIDES USEFUL AS SELECTIVE DETECTORS OF REDUCING GASES IN THE ATMOSPHERE, PROCESS FOR THEIR PREPARATION, AND DETECTION DEVICE CONTAINING THEM
CA2034118A1 (en) * 1990-02-09 1991-08-10 Nang Tri Tran Solid state radiation detector
JP2999280B2 (en) * 1991-02-22 2000-01-17 キヤノン株式会社 Photovoltaic element
JP2994812B2 (en) * 1991-09-26 1999-12-27 キヤノン株式会社 Solar cell
US5346601A (en) * 1993-05-11 1994-09-13 Andrew Barada Sputter coating collimator with integral reactive gas distribution
TW273067B (en) * 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
JP3571785B2 (en) * 1993-12-28 2004-09-29 キヤノン株式会社 Method and apparatus for forming deposited film
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5668663A (en) * 1994-05-05 1997-09-16 Donnelly Corporation Electrochromic mirrors and devices
US5700699A (en) * 1995-03-16 1997-12-23 Lg Electronics Inc. Method for fabricating a polycrystal silicon thin film transistor
JP3306258B2 (en) * 1995-03-27 2002-07-24 三洋電機株式会社 Method for manufacturing semiconductor device
JP3169337B2 (en) * 1995-05-30 2001-05-21 キヤノン株式会社 Photovoltaic element and method for manufacturing the same
US6969635B2 (en) * 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US5716480A (en) * 1995-07-13 1998-02-10 Canon Kabushiki Kaisha Photovoltaic device and method of manufacturing the same
US6153013A (en) * 1996-02-16 2000-11-28 Canon Kabushiki Kaisha Deposited-film-forming apparatus
EP0827213A3 (en) * 1996-08-28 1999-05-19 Canon Kabushiki Kaisha Photovoltaic device
US6159763A (en) * 1996-09-12 2000-12-12 Canon Kabushiki Kaisha Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
US5993594A (en) * 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
US6432203B1 (en) * 1997-03-17 2002-08-13 Applied Komatsu Technology, Inc. Heated and cooled vacuum chamber shield
KR19990009046A (en) 1997-07-07 1999-02-05 윤종용 Luminescent Tools for Flat Panel Advertising Devices
US6238527B1 (en) * 1997-10-08 2001-05-29 Canon Kabushiki Kaisha Thin film forming apparatus and method of forming thin film of compound by using the same
JP4208281B2 (en) * 1998-02-26 2009-01-14 キヤノン株式会社 Multilayer photovoltaic device
TW410478B (en) * 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
DE69936526T3 (en) * 1998-06-01 2009-06-25 Kaneka Corp. SILICON THIN LAYER PHOTOELECTRIC DEVICE
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
EP2264771A3 (en) * 1998-12-03 2015-04-29 Semiconductor Energy Laboratory Co., Ltd. MOS thin film transistor and method of fabricating same
US20020084455A1 (en) * 1999-03-30 2002-07-04 Jeffery T. Cheung Transparent and conductive zinc oxide film with low growth temperature
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6953947B2 (en) * 1999-12-31 2005-10-11 Lg Chem, Ltd. Organic thin film transistor
US6620719B1 (en) * 2000-03-31 2003-09-16 International Business Machines Corporation Method of forming ohmic contacts using a self doping layer for thin-film transistors
KR100679917B1 (en) * 2000-09-09 2007-02-07 엘지.필립스 엘시디 주식회사 Thin film transistor and the method of fabricating the same
WO2002043466A2 (en) * 2000-11-30 2002-06-06 North Carolina State University Non-thermionic sputter material transport device, methods of use, and materials produced thereby
WO2002073313A1 (en) * 2001-03-13 2002-09-19 University Of Utah Structured organic materials and devices using low-energy particle beams
JP4560245B2 (en) * 2001-06-29 2010-10-13 キヤノン株式会社 Photovoltaic element
US20030049464A1 (en) * 2001-09-04 2003-03-13 Afg Industries, Inc. Double silver low-emissivity and solar control coatings
US20030207093A1 (en) * 2001-12-03 2003-11-06 Toshio Tsuji Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
US6825134B2 (en) * 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
CA2512010C (en) * 2002-12-31 2013-04-16 Cardinal Cg Company Coater having substrate cleaning device and coating deposition methods employing such coater
EP1624494A4 (en) * 2003-05-13 2007-10-10 Asahi Glass Co Ltd Transparent conductive substrate for solar battery and method for producing same
JP4108633B2 (en) * 2003-06-20 2008-06-25 シャープ株式会社 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
US20050017244A1 (en) * 2003-07-25 2005-01-27 Randy Hoffman Semiconductor device
US7816863B2 (en) * 2003-09-12 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
JP4823478B2 (en) * 2003-09-19 2011-11-24 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7122398B1 (en) * 2004-03-25 2006-10-17 Nanosolar, Inc. Manufacturing of optoelectronic devices
US7125758B2 (en) * 2004-04-20 2006-10-24 Applied Materials, Inc. Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors
US20050233092A1 (en) * 2004-04-20 2005-10-20 Applied Materials, Inc. Method of controlling the uniformity of PECVD-deposited thin films
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
CA2562556C (en) * 2004-04-27 2011-07-05 Toyota Jidosha Kabushiki Kaisha Process for producing metal oxide particle and exhaust gas purifying catalyst
EP2650907A3 (en) * 2004-06-04 2014-10-08 The Board of Trustees of the University of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US7158208B2 (en) * 2004-06-30 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060011139A1 (en) * 2004-07-16 2006-01-19 Applied Materials, Inc. Heated substrate support for chemical vapor deposition
US7622338B2 (en) * 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2006100760A (en) * 2004-09-02 2006-04-13 Casio Comput Co Ltd Thin-film transistor and its manufacturing method
US7382421B2 (en) * 2004-10-12 2008-06-03 Hewlett-Packard Development Company, L.P. Thin film transistor with a passivation layer
US7628896B2 (en) * 2005-07-05 2009-12-08 Guardian Industries Corp. Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same
US7432201B2 (en) * 2005-07-19 2008-10-07 Applied Materials, Inc. Hybrid PVD-CVD system
US20070030569A1 (en) * 2005-08-04 2007-02-08 Guardian Industries Corp. Broad band antireflection coating and method of making same
US20070068571A1 (en) * 2005-09-29 2007-03-29 Terra Solar Global Shunt Passivation Method for Amorphous Silicon Thin Film Photovoltaic Modules
US8435388B2 (en) * 2005-11-01 2013-05-07 Cardinal Cg Company Reactive sputter deposition processes and equipment
JP4714579B2 (en) * 2005-12-26 2011-06-29 セイコーインスツル株式会社 clock
US8372250B2 (en) * 2007-07-23 2013-02-12 National Science And Technology Development Agency Gas-timing method for depositing oxynitride films by reactive R.F. magnetron sputtering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129698A (en) * 1995-10-30 1997-05-16 Kyocera Corp Semiconductor manufacturing equipment
US20070017445A1 (en) * 2005-07-19 2007-01-25 Takako Takehara Hybrid PVD-CVD system
JP2007150156A (en) * 2005-11-30 2007-06-14 Toppan Printing Co Ltd Transistor and method of manufacturing same

Also Published As

Publication number Publication date
US20090239359A1 (en) 2009-09-24
TW200952182A (en) 2009-12-16
US7879698B2 (en) 2011-02-01
TWI442574B (en) 2014-06-21
WO2009120552A2 (en) 2009-10-01

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