WO2009145581A3 - 산화물 반도체 및 이를 포함하는 박막 트랜지스터 - Google Patents
산화물 반도체 및 이를 포함하는 박막 트랜지스터 Download PDFInfo
- Publication number
- WO2009145581A3 WO2009145581A3 PCT/KR2009/002855 KR2009002855W WO2009145581A3 WO 2009145581 A3 WO2009145581 A3 WO 2009145581A3 KR 2009002855 W KR2009002855 W KR 2009002855W WO 2009145581 A3 WO2009145581 A3 WO 2009145581A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- oxide semiconductor
- thin film
- film transistor
- transistor including
- including same
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
Abstract
Zn, In 및 Hf을 포함하며, Zn, In 및 Hf 원자의 전체 함량 대비 Hf 원자 함량의 조성비가 2 내지 16 at%인 산화물 반도체 및 이를 포함하는 박막 트랜지스터를 제공한다.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011511515A JP2011525041A (ja) | 2008-05-29 | 2009-05-29 | 酸化物半導体及びこれを含む薄膜トランジスタ |
CN200980119801.7A CN102067319A (zh) | 2008-05-29 | 2009-05-29 | 氧化物半导体及包含该氧化物半导体的薄膜晶体管 |
EP09755046.1A EP2302685B1 (en) | 2008-05-29 | 2009-05-29 | Thin film transistor including oxide semiconductor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080050466A KR101468591B1 (ko) | 2008-05-29 | 2008-05-29 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
KR10-2008-0050466 | 2008-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009145581A2 WO2009145581A2 (ko) | 2009-12-03 |
WO2009145581A3 true WO2009145581A3 (ko) | 2010-03-04 |
Family
ID=41377803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/002855 WO2009145581A2 (ko) | 2008-05-29 | 2009-05-29 | 산화물 반도체 및 이를 포함하는 박막 트랜지스터 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7816680B2 (ko) |
EP (1) | EP2302685B1 (ko) |
JP (1) | JP2011525041A (ko) |
KR (1) | KR101468591B1 (ko) |
CN (1) | CN102067319A (ko) |
WO (1) | WO2009145581A2 (ko) |
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TWI626744B (zh) | 2008-07-31 | 2018-06-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
TWI495108B (zh) | 2008-07-31 | 2015-08-01 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
JP5627071B2 (ja) | 2008-09-01 | 2014-11-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2010065823A2 (en) * | 2008-12-05 | 2010-06-10 | E. I. Du Pont De Nemours And Company | Backplane structures for solution processed electronic devices |
WO2010065835A2 (en) * | 2008-12-05 | 2010-06-10 | E. I. Du Pont De Nemours And Company | Backplane structures for solution processed electronic devices |
US8378342B2 (en) * | 2009-03-23 | 2013-02-19 | Samsung Electronics Co., Ltd. | Oxide semiconductor and thin film transistor including the same |
KR20100135544A (ko) * | 2009-06-17 | 2010-12-27 | 삼성전자주식회사 | 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 전자소자 |
TW201103090A (en) * | 2009-07-01 | 2011-01-16 | Univ Nat Chiao Tung | Method for manufacturing a self-aligned thin film transistor and a structure of the same |
CN105739209B (zh) * | 2009-11-30 | 2022-05-27 | 株式会社半导体能源研究所 | 液晶显示设备、用于驱动该液晶显示设备的方法 |
KR101035357B1 (ko) * | 2009-12-15 | 2011-05-20 | 삼성모바일디스플레이주식회사 | 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자 |
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CN105957481B (zh) * | 2009-12-18 | 2019-12-31 | 株式会社半导体能源研究所 | 显示设备 |
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WO2011086846A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2011090087A1 (en) * | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Display method of display device |
KR101855060B1 (ko) * | 2010-01-22 | 2018-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치 및 그 구동 방법 |
KR101893904B1 (ko) * | 2010-01-29 | 2018-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
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JP5727832B2 (ja) * | 2010-03-31 | 2015-06-03 | 株式会社半導体エネルギー研究所 | トランジスタ |
US8912536B2 (en) | 2010-11-19 | 2014-12-16 | Samsung Electronics Co., Ltd. | Transistors, methods of manufacturing the same and electronic devices including transistors |
JP5723262B2 (ja) * | 2010-12-02 | 2015-05-27 | 株式会社神戸製鋼所 | 薄膜トランジスタおよびスパッタリングターゲット |
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CN102351528B (zh) * | 2011-09-28 | 2013-07-10 | 华南理工大学 | 硼化镧掺杂的氧化物半导体材料及其应用 |
KR102100425B1 (ko) * | 2011-12-27 | 2020-04-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US8841665B2 (en) * | 2012-04-06 | 2014-09-23 | Electronics And Telecommunications Research Institute | Method for manufacturing oxide thin film transistor |
JP6662432B2 (ja) * | 2013-06-28 | 2020-03-11 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
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US11545581B2 (en) * | 2019-08-02 | 2023-01-03 | South China University Of Technology | Metal oxide (MO) semiconductor and thin-film transistor and application thereof |
CN107146816B (zh) * | 2017-04-10 | 2020-05-15 | 华南理工大学 | 一种氧化物半导体薄膜及由其制备的薄膜晶体管 |
WO2019005090A1 (en) * | 2017-06-30 | 2019-01-03 | Intel Corporation | SOURCE AND DRAIN CONTACTS OF SEMICONDUCTOR OXIDE DEVICE COMPRISING GRADUATED INDIUM LAYERS |
US11545580B2 (en) * | 2017-11-15 | 2023-01-03 | South China University Of Technology | Metal oxide (MO semiconductor and thin-film transistor and application thereof |
WO2020044183A1 (ja) * | 2018-08-31 | 2020-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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2008
- 2008-05-29 KR KR1020080050466A patent/KR101468591B1/ko active IP Right Grant
- 2008-06-19 US US12/213,399 patent/US7816680B2/en active Active
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2009
- 2009-05-29 CN CN200980119801.7A patent/CN102067319A/zh active Pending
- 2009-05-29 WO PCT/KR2009/002855 patent/WO2009145581A2/ko active Application Filing
- 2009-05-29 EP EP09755046.1A patent/EP2302685B1/en not_active Not-in-force
- 2009-05-29 JP JP2011511515A patent/JP2011525041A/ja active Pending
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US20070184576A1 (en) * | 2005-11-29 | 2007-08-09 | Oregon State University | Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials |
Also Published As
Publication number | Publication date |
---|---|
KR20090124329A (ko) | 2009-12-03 |
KR101468591B1 (ko) | 2014-12-04 |
US20090294764A1 (en) | 2009-12-03 |
EP2302685A4 (en) | 2011-07-06 |
CN102067319A (zh) | 2011-05-18 |
WO2009145581A2 (ko) | 2009-12-03 |
EP2302685A2 (en) | 2011-03-30 |
EP2302685B1 (en) | 2014-04-09 |
JP2011525041A (ja) | 2011-09-08 |
US7816680B2 (en) | 2010-10-19 |
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