WO2009145581A3 - 산화물 반도체 및 이를 포함하는 박막 트랜지스터 - Google Patents

산화물 반도체 및 이를 포함하는 박막 트랜지스터 Download PDF

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Publication number
WO2009145581A3
WO2009145581A3 PCT/KR2009/002855 KR2009002855W WO2009145581A3 WO 2009145581 A3 WO2009145581 A3 WO 2009145581A3 KR 2009002855 W KR2009002855 W KR 2009002855W WO 2009145581 A3 WO2009145581 A3 WO 2009145581A3
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WO
WIPO (PCT)
Prior art keywords
oxide semiconductor
thin film
film transistor
transistor including
including same
Prior art date
Application number
PCT/KR2009/002855
Other languages
English (en)
French (fr)
Other versions
WO2009145581A2 (ko
Inventor
김창정
김상욱
김선일
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to JP2011511515A priority Critical patent/JP2011525041A/ja
Priority to CN200980119801.7A priority patent/CN102067319A/zh
Priority to EP09755046.1A priority patent/EP2302685B1/en
Publication of WO2009145581A2 publication Critical patent/WO2009145581A2/ko
Publication of WO2009145581A3 publication Critical patent/WO2009145581A3/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous

Abstract

Zn, In 및 Hf을 포함하며, Zn, In 및 Hf 원자의 전체 함량 대비 Hf 원자 함량의 조성비가 2 내지 16 at%인 산화물 반도체 및 이를 포함하는 박막 트랜지스터를 제공한다.
PCT/KR2009/002855 2008-05-29 2009-05-29 산화물 반도체 및 이를 포함하는 박막 트랜지스터 WO2009145581A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011511515A JP2011525041A (ja) 2008-05-29 2009-05-29 酸化物半導体及びこれを含む薄膜トランジスタ
CN200980119801.7A CN102067319A (zh) 2008-05-29 2009-05-29 氧化物半导体及包含该氧化物半导体的薄膜晶体管
EP09755046.1A EP2302685B1 (en) 2008-05-29 2009-05-29 Thin film transistor including oxide semiconductor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080050466A KR101468591B1 (ko) 2008-05-29 2008-05-29 산화물 반도체 및 이를 포함하는 박막 트랜지스터
KR10-2008-0050466 2008-05-29

Publications (2)

Publication Number Publication Date
WO2009145581A2 WO2009145581A2 (ko) 2009-12-03
WO2009145581A3 true WO2009145581A3 (ko) 2010-03-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002855 WO2009145581A2 (ko) 2008-05-29 2009-05-29 산화물 반도체 및 이를 포함하는 박막 트랜지스터

Country Status (6)

Country Link
US (1) US7816680B2 (ko)
EP (1) EP2302685B1 (ko)
JP (1) JP2011525041A (ko)
KR (1) KR101468591B1 (ko)
CN (1) CN102067319A (ko)
WO (1) WO2009145581A2 (ko)

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KR101603768B1 (ko) * 2009-12-22 2016-03-15 삼성전자주식회사 트랜지스터와 그 제조방법 및 트랜지스터를 포함하는 평판표시장치
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KR101893904B1 (ko) * 2010-01-29 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
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JP5727832B2 (ja) * 2010-03-31 2015-06-03 株式会社半導体エネルギー研究所 トランジスタ
US8912536B2 (en) 2010-11-19 2014-12-16 Samsung Electronics Co., Ltd. Transistors, methods of manufacturing the same and electronic devices including transistors
JP5723262B2 (ja) * 2010-12-02 2015-05-27 株式会社神戸製鋼所 薄膜トランジスタおよびスパッタリングターゲット
KR101891650B1 (ko) * 2011-09-22 2018-08-27 삼성디스플레이 주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터, 및 박막 트랜지스터 표시판
CN102351528B (zh) * 2011-09-28 2013-07-10 华南理工大学 硼化镧掺杂的氧化物半导体材料及其应用
KR102100425B1 (ko) * 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
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KR20160048538A (ko) 2014-10-24 2016-05-04 삼성전자주식회사 엑스레이를 검출하는 장치 및 방법, 엑스레이 이미징 시스템
US11545581B2 (en) * 2019-08-02 2023-01-03 South China University Of Technology Metal oxide (MO) semiconductor and thin-film transistor and application thereof
CN107146816B (zh) * 2017-04-10 2020-05-15 华南理工大学 一种氧化物半导体薄膜及由其制备的薄膜晶体管
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Also Published As

Publication number Publication date
KR20090124329A (ko) 2009-12-03
KR101468591B1 (ko) 2014-12-04
US20090294764A1 (en) 2009-12-03
EP2302685A4 (en) 2011-07-06
CN102067319A (zh) 2011-05-18
WO2009145581A2 (ko) 2009-12-03
EP2302685A2 (en) 2011-03-30
EP2302685B1 (en) 2014-04-09
JP2011525041A (ja) 2011-09-08
US7816680B2 (en) 2010-10-19

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