WO2010002807A3 - Capping layers for metal oxynitride tfts - Google Patents

Capping layers for metal oxynitride tfts Download PDF

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Publication number
WO2010002807A3
WO2010002807A3 PCT/US2009/049092 US2009049092W WO2010002807A3 WO 2010002807 A3 WO2010002807 A3 WO 2010002807A3 US 2009049092 W US2009049092 W US 2009049092W WO 2010002807 A3 WO2010002807 A3 WO 2010002807A3
Authority
WO
WIPO (PCT)
Prior art keywords
tft
capping layer
performance
tfts
nitrogen
Prior art date
Application number
PCT/US2009/049092
Other languages
French (fr)
Other versions
WO2010002807A2 (en
Inventor
Yan Ye
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2009801258893A priority Critical patent/CN102084470B/en
Priority to KR1020117002862A priority patent/KR101670425B1/en
Priority to JP2011516778A priority patent/JP5677712B2/en
Publication of WO2010002807A2 publication Critical patent/WO2010002807A2/en
Publication of WO2010002807A3 publication Critical patent/WO2010002807A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A capping layer may be deposited over the active channel of a thin film transistor (TFT) in order to protect the active channel from contamination. The capping layer may affect the performance of the TFT. If the capping layer contains too much hydrogen, nitrogen, or oxygen, the threshold voltage, sub threshold slope, and mobility of the TFT may be negatively impacted. By controlling the ratio of the flow rates of the nitrogen, oxygen, and hydrogen containing gases, the performance of the TFT may be optimized. Additionally, the power density, capping layer deposition pressure, and the temperature may also be controlled to optimize the TFT performance.
PCT/US2009/049092 2008-07-02 2009-06-29 Capping layers for metal oxynitride tfts WO2010002807A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801258893A CN102084470B (en) 2008-07-02 2009-06-29 Capping layers for metal oxynitride TFTs
KR1020117002862A KR101670425B1 (en) 2008-07-02 2009-06-29 Capping layers for metal oxynitride tfts
JP2011516778A JP5677712B2 (en) 2008-07-02 2009-06-29 Capping layer for metal oxynitride TFT

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US7783108P 2008-07-02 2008-07-02
US61/077,831 2008-07-02
US11774708P 2008-11-25 2008-11-25
US11774408P 2008-11-25 2008-11-25
US61/117,747 2008-11-25
US61/117,744 2008-11-25

Publications (2)

Publication Number Publication Date
WO2010002807A2 WO2010002807A2 (en) 2010-01-07
WO2010002807A3 true WO2010002807A3 (en) 2011-02-24

Family

ID=41463667

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2009/047966 WO2010002608A2 (en) 2008-07-02 2009-06-19 Thin film transistors using multiple active channel layers
PCT/US2009/049092 WO2010002807A2 (en) 2008-07-02 2009-06-29 Capping layers for metal oxynitride tfts
PCT/US2009/049084 WO2010002803A2 (en) 2008-07-02 2009-06-29 Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2009/047966 WO2010002608A2 (en) 2008-07-02 2009-06-19 Thin film transistors using multiple active channel layers

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/US2009/049084 WO2010002803A2 (en) 2008-07-02 2009-06-29 Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors

Country Status (6)

Country Link
US (6) US8258511B2 (en)
JP (3) JP5744726B2 (en)
KR (3) KR101621840B1 (en)
CN (4) CN102124569B (en)
TW (3) TWI394282B (en)
WO (3) WO2010002608A2 (en)

Cited By (2)

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US9570626B2 (en) 2012-04-06 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device

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