WO2010017321A1 - Bonded metal and ceramic plates for thermal management of optical and electronic devices - Google Patents
Bonded metal and ceramic plates for thermal management of optical and electronic devices Download PDFInfo
- Publication number
- WO2010017321A1 WO2010017321A1 PCT/US2009/052890 US2009052890W WO2010017321A1 WO 2010017321 A1 WO2010017321 A1 WO 2010017321A1 US 2009052890 W US2009052890 W US 2009052890W WO 2010017321 A1 WO2010017321 A1 WO 2010017321A1
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- WIPO (PCT)
- Prior art keywords
- layer
- copper
- ceramic
- joining
- metallized
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F7/00—Elements not covered by group F28F1/00, F28F3/00 or F28F5/00
- F28F7/02—Blocks traversed by passages for heat-exchange media
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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Definitions
- the invention relates to a microheat exchanger and a method of fabrication of the same. More particularly, this invention relates to a microheat exchanger and a method of fabrication, where the microheat exchanger is used for laser diode cooling.
- Microheat exchangers are made of thermally conductive material and are used to transfer heat from a heat generating device, such as an integrated circuit or a laser diode, to a fluid flowing through fluid pathways within the microheat exchanger.
- Microheat exchangers are commonly made of metal, such as copper, and electrical isolation is often required between the heat generating device and the microheat exchanger.
- Some ceramic materials are thermally conductive yet electrically resistant. For this reason, such ceramic materials are often used as an intermediate material between a heat generating device and a microheat exchanger to provide electrical isolation while still maintaining thermal conductivity.
- the heat generating device is coupled to a conductive pad, typically made of a conductive metal such as copper. In such a configuration, the ceramic is middle layer between the conductive copper pad coupled to the heat generating device and the microheat exchanger.
- a direct bonded copper (DBC) method uses a high temperature joining process to bond a copper sheet to a ceramic plate in the presence of a protective gas atmosphere having small amounts of oxygen (50-200 ppm).
- Exemplary DBC methods are described in U.S. Patent Number 6,297,469 and U.S. Patent Number 7,036,711, which are hereby incorporated in their entirety by reference.
- Three commonly used ceramic materials are beryllium oxide (BeO), aluminum oxide (Al 2 O 3 ), and aluminum nitride (AlN). Oxygen and copper bond together under high temperature.
- the copper and ceramic are heated to a carefully controlled temperature, in an atmosphere of nitrogen and a small percentage of oxygen.
- the temperature used is in the range between 1950 and 1981 degrees Fahrenheit, which is close to the melting temperature of copper. Under these conditions, a copper-oxygen eutectic forms which bonds successfully both to copper and the ceramic, thereby bonding a copper layer to a ceramic layer.
- the copper layer is used as a conductive pad to be coupled to a heat generating device.
- the ceramic layer is typically soldered to the top of the microheat exchanger.
- microvoids are formed at the interface of the bonded copper and ceramic layers.
- the microvoids are due to the imperfections and irregularities in the contact surfaces of the copper and ceramic layers.
- the size of the ceramic plate is larger.
- the larger the ceramic plate the greater the impact of the microvoids.
- Presence of microvoids reduces thermal efficiency.
- presence of microvoids increases the chances that the copper layer and the ceramic layer will delaminate because there is not a perfect bond across the entire interface surface.
- the thermal coefficient of expansion for copper is much greater than that for ceramic.
- the copper layer expands more so than the ceramic, at which point the ceramic layer and the copper layer are bonded.
- the copper layer contracts more so than the ceramic, due to the differing thermal coefficients of expansion, which leads to warping and possible cracking of the bonded copper-ceramic assembly.
- a microheat exchanging assembly is configured to cool one or more heat generating devices, such as integrated circuits or laser diodes.
- the microheat exchanging assembly includes a first ceramic assembly thermally coupled to a first surface, and in some embodiments, a second ceramic assembly thermally coupled to a second surface.
- Each ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other.
- Each ceramic assembly includes a ceramic layer to provide this electrical isolation.
- the ceramic layer has high thermal conductivity and high electrical resistivity.
- a top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material.
- a brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer.
- the joining layer is a composite of the joining material, the ceramic layer, and the conductive layer.
- the top conductive layer and the joining layer are etched to form the electrically isolated conductive pads.
- the conductive layers are bonded to the ceramic layer using a bare ceramic approach or a metallized ceramic approach.
- a device in one aspect, includes a first copper layer, a ceramic layer, a second copper layer, a first active brazing alloy bonded between the first copper layer and the ceramic layer to form a first joining layer, and a second active brazing alloy bonded between the ceramic layer and the second copper layer to form a second joining layer.
- the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride.
- the first active brazing alloy layer and the second active brazing alloy layer are a copper-based active brazing alloy, a copper-silver-based active brazing alloy, or an indium- copper-silver-based active brazing alloy.
- the first active brazing alloy layer and the second active brazing alloy layer are an active joining material paste.
- the first active brazing alloy layer and the second active brazing alloy layer are an active joining material foil.
- a device in another aspect, includes a first copper layer, a ceramic layer, a second copper layer, a first active brazing alloy layer bonded between the first copper layer and the ceramic layer to form a first joining layer, wherein the first copper layer and the first joining layer are configured to form a plurality of electrically isolated conductive pads, and a second active brazing alloy layer bonded between the ceramic layer and the second copper layer to form a second joining layer.
- the first copper layer and the first joining layer are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer.
- each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the first joining layer to a first surface of the ceramic layer, the first surface of the first copper layer is distal from the first joining layer, and the first surface of the ceramic layer is proximate to the first joining layer, further wherein a slope of the etched wall is uniform through the first copper layer and the first joining layer.
- each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the first joining layer to a first surface of the ceramic layer, the first surface of the first copper layer is distal from the first joining layer, and the first surface of the ceramic layer is proximate to the first joining layer, further wherein a slope of the etched wall through the first joining layer is steeper than a slope of the etched wall through the first copper layer.
- the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride.
- the first active brazing alloy layer and the second active brazing alloy layer are a copper-based active brazing alloy, a copper-silver- based active brazing alloy, or an indium-copper-silver-based active brazing alloy.
- the first active brazing alloy layer and the second active brazing alloy layer are an active joining material paste.
- the first active brazing alloy layer and the second active brazing alloy layer are an active joining material foil.
- a device in yet another aspect, includes a first copper layer, a ceramic layer including a metallized first surface and a metallized second surface, a second copper layer, a first copper and ceramic joining layer bonded between the first copper layer and the metallized first surface of the ceramic layer to form a first joining layer, wherein the first copper layer, the first joining layer, and the metallized first surface are configured to form a plurality of electrically isolated conductive pads, and a second copper and ceramic joining layer bonded between the metallized second surface of the ceramic layer and the second copper layer to form a second joining layer.
- the first copper layer, the first joining layer, and the metallized first surface are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer.
- each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer, the first joining layer, and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall is uniform through the first copper layer, the first joining layer, and the metallized first surface.
- each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer, the first joining layer, and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall through the first joining layer is steeper than a slope of the etched wall through the first copper layer.
- the metallized first surface is molybdenum manganese and nickel.
- the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride.
- the first copper and ceramic joining layer and the second copper and ceramic joining layer are a copper-silver paste, a copper-silver foil, a copper-gold paste, or a copper-gold foil.
- the first copper and ceramic joining layer and the first copper layer are a first silver plated copper sheet
- the second copper and ceramic joining layer and the second copper layer are a second silver plated copper sheet.
- a device in another aspect, includes a ceramic layer including a metallized first surface and a metallized second surface, a first copper layer plated to the metallized first surface, wherein the first plated copper layer and the metallized first surface are configured to form a plurality of electrically isolated conductive pads, and a second copper layer plated to the metallized second surface.
- the first copper layer and the metallized first surface are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer.
- each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall is uniform through the first copper layer and the metallized first surface.
- each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall through the metallized first surface is steeper than a slope of the etched wall through the first copper layer.
- the metallized first surface is molybdenum manganese and nickel.
- the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride.
- Figure 1 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a bare ceramic approach according to a first embodiment, the view shown in Figure 1 is before a brazing process is performed.
- Figure 2 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a bare ceramic approach according to a second embodiment, the view shown in Figure 1 is before a brazing process is performed.
- Figure 3 illustrates an exemplary process for fabricating a ceramic assembly according to the bare ceramic approach.
- Figure 4 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a brazed copper option of a metallized ceramic approach according to a first embodiment, the view shown in Figure 4 is before a brazing process is performed.
- Figure 5 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a metallized ceramic approach according to a second embodiment, the view shown in Figure 5 is before a brazing process is performed.
- Figure 6 illustrates an exemplary process for fabricating a ceramic assembly according to the brazed copper option of the metallized ceramic approach.
- Figure 7 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a plated copper option of a metallized ceramic approach according to a third embodiment.
- Figure 8 illustrates an exemplary process for fabricating a ceramic assembly according to the plated copper option of the metallized ceramic approach.
- Figure 9 illustrates a cut out side view of an exemplary ceramic assembly.
- Figures 10-11 illustrate the two step etching process applied to the exemplary ceramic assembly of Figure 9.
- Figure 12 illustrates a magnified portion of the etched surfaces between two adjacent pads.
- Figure 13 illustrates the two step etching process applied to the exemplary ceramic assembly of Figure 9.
- Figures 14-17 illustrate the second approach for patterning both the copper layer and the joining layer while fabricating an exemplary ceramic assembly.
- Figure 18 illustrates an exemplary process for fabricating a microheat exchanging assembly according to an embodiment.
- Figure 19 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly with the ceramic assemblies fabricated using the bare ceramic approach.
- Figure 20 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly with the ceramic assemblies fabricated using the brazed copper option of the metallized ceramic approach.
- Figure 21 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly with the ceramic assemblies fabricated using the plated copper option of the metallized ceramic approach.
- Embodiments are directed to a microheat exchanging assembly and a ceramic assembly and methods of fabricating each.
- the microheat exchanging assembly is configured to cool one or more heat generating devices, such as electronic devices.
- the microheat exchanging assembly includes a plurality of electrically and thermally conductive pads, each conductive pad is electrically isolated from each other.
- the heat generating device is electrically and thermally coupled to the conductive pad using any conventional method, such as soldering.
- each pad is coupled to one of an array of laser diodes used in high power lasers for industrial cutting and marking applications.
- the microheat exchanging assembly is referred to a microheat exchanger for laser diodes (MELDTM).
- the microheat exchanging assembly is particularly applicable to those applications requiring the arrangement of multiple heat generating devices in a common plane, such as a laser diode array.
- a ceramic layer with high thermal conductivity and high electrical resistivity is used.
- the ceramic layer is made of beryllium oxide, aluminum oxide, or aluminum nitride. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer using an intermediate joining material.
- each conductive layer is copper.
- the top conductive layer and the intermediate joining material are etched to form the electrically isolated conductive pads.
- the bonded ceramic and conductive layers form a first ceramic assembly.
- the bottom conductive layer of the first ceramic assembly is bonded to a top surface of a microheat exchanger through which a cooling fluid circulates.
- the microheat exchanger is made of a thermally conductive material. In some embodiments, the microheat exchanger is made of copper. Heat is transferred from the heat generating devices coupled to the conductive pads to the fluid flowing through the microheat exchanger.
- a second ceramic assembly is formed and bonded to a bottom surface of the microheat exchanger.
- the second ceramic assembly can also include a plurality of electrically isolated conductive pads, which can be patterned the same or differently than those on the first ceramic assembly.
- Fabrication of the microheat exchanging assembly includes the general steps of fabricating the ceramic assembly, fabricating the microheat exchanger, and final assembly and brazing of the microheat exchanging assembly.
- a ceramic assembly is formed by bonding a conductive layer to both sides of a thin ceramic plate using an intermediate joining material.
- each conductive layer is a copper layer.
- the ceramic plate is made of beryllium oxide (BeO), aluminum oxide (Al 2 O 3 ), or aluminum nitride (AlN).
- BeO may find restrictions due to its toxicity.
- Optimum thickness of the ceramic plate is dictated by the ability to minimize heat transfer resistance while maintaining mechanical strength of the bonded layer. The heat transfer resistance is reduced as the thickness of the ceramic plate is reduced, but the mechanical strength is increased as the thickness of the ceramic plate is increased.
- the ceramic plate thickness varies from about 100 micrometers to several millimeters.
- the thickness of the ceramic plate is in the range of about 0.5 mm to about 0.75 mm.
- the thickness of each copper layer is dictated by the extent of warping of the assembled unit and the need for grinding the copper layer for its planarization.
- the copper layer thickness is in the range of about 0.05 mm to about 0.5 mm.
- the thickness of the copper layer is about 0.25 mm.
- the surface area of the ceramic assembly is in the range of about 1250 mm 2 to about 8000 mm 2 .
- a requirement of the fabrication of the ceramic assembly is to provide excellent bonding of the copper layers to the ceramic plate.
- the remaining layers of the ceramic assembly are able to be patterned by selective removal of the copper layer and joining materials for making electrically isolated patterned copper pads.
- Various techniques for bonding copper to both sides of a ceramic plate are disclosed.
- One approach is the bare ceramic approach which uses active brazing alloy (ABA) materials such as copper-based ABA (Cu-ABA); copper and silver-based ABA (CuSiI-ABA); and indium, copper, and silver-based ABA (InCuSiI-ABA).
- ABAs copper rich, and therefore provides good thermal conductivity.
- Each of these ABAs include a small amount of an active ingredient to bind with ceramic.
- each of these ABAs includes titanium (Ti) as an active ingredient. Titanium in the ABA reacts with the ceramic plate and the copper layer to provide a chemical bond, resulting in a joining layer interface formed between the copper layer and the ceramic plate. It is understood that alternative
- ABAs including one or more active ingredients other than titanium can be used to bind with ceramic.
- brazing is a joining process whereby a joining material, such as a metal or alloy, is heated to a melting temperature. At the melting temperature, the liquidus joining material interacts with a thin layer of the base metal, cooling to form a strong, sealed joint.
- the resulting joining layer is a blend of the ABA material, the copper layer, and the ceramic layer.
- the melting temperature of the braze material is lower than the melting temperature of the materials being joined.
- the brazing temperature is lower than a conventional temperature used to direct copper bond the two layers together. Reducing the temperature also reduces the warping effects on the cooled copper-ceramic assembly.
- Table 1 shows the composition and melting temperature of some selected active brazing alloys used in the copper and ceramic bonding process:
- each copper layer is a copper sheet and the ABA is used in a paste form.
- the ABA paste can be sprayed or screen printed on either both sides of the ceramic plate or on one side of each copper sheet that is to be attached to the ceramic plate.
- Figure 1 illustrates a cut-out side view of exemplary layers of a ceramic assembly 10 fabricated using a bare ceramic approach according to a first embodiment, the view shown in Figure 1 is before a brazing process is performed.
- the first embodiment of the bare ceramic approach uses an ABA paste.
- the ABA paste can be applied either to one side of each copper sheet, as shown in Figure 1 as ABA paste 14 applied to copper sheet 12 and ABA paste 18 applied to copper sheet 20, or to both sides of a ceramic plate 16.
- the thickness of the ABA paste varies between several microns to 100s of microns. In still other embodiments, the thickness of the ABA paste is about 25 microns.
- an ABA foil is placed between the ceramic plate and each copper sheet.
- Figure 2 illustrates a cut-out side view of exemplary layers of a ceramic assembly 30 fabricated using a bare ceramic approach according to a second embodiment, the view shown in Figure 1 is before a brazing process is performed.
- the second embodiment of the bare ceramic approach uses ABA foils.
- a first ABA foil 34 is positioned between one side of a ceramic plate 36 and a copper sheet 32, and a second ABA foil 38 is positioned between the other side of the ceramic plate 36 and a copper sheet 40.
- the thickness of each ABA foil 34 and 38 is in the range of about 10 microns to about 100 microns. In still other embodiments, the thickness of each ABA foil 34 and 38 is about 25 microns.
- Figure 3 illustrates an exemplary process for fabricating a ceramic assembly according to the bare ceramic approach.
- the copper layer and ABA material are assembled on both sides of the ceramic plate.
- the ABA material can be either paste of a foil.
- the copper, ABA material, ceramic plate, ABA material, and copper assembly are vacuum brazed, thereby forming the ceramic assembly. Since the ABAs described in this bonding process contain titanium, the use of forming gas (95% Nitrogen/5% Hydrogen) must be avoided since using such gas in the brazing process with these alloys forms titanium hydride, which prevents chemical bonding of ceramic to copper.
- the copper layer is made of any conventional copper alloy including, but not limited to, 110, 102, or 101 copper.
- the brazing temperature is in the range of about 1840 to about 1890 degrees Fahrenheit.
- the brazing temperature is in the range of about 1460 to about 1520 degrees Fahrenheit.
- the brazing temperature is in the range of about 1280 to about 1340 degrees Fahrenheit.
- a metallized ceramic approach which uses a high temperature refractory material including, but not limited to, molybdenum manganese (MoMn), titanium (Ti), or tungsten (W).
- MoMn paste molybdenum manganese
- Ti titanium
- W tungsten
- the refractory materials, such as MoMn paste are screen printed onto each side of a ceramic plate.
- the refractory materials, such as titanium or tungsten are deposited by physical vapor deposition (PVD) onto a first side and a second side of a ceramic plate.
- PVD physical vapor deposition
- the next step of metallization is to provide a thin layer coating of electrolytically or electrolessly deposited nickel, thereby forming a metallized ceramic plate.
- the nickel layer enables joining of the metallized ceramic plate to copper, or electroplating of copper directly onto the metallized ceramic plate.
- the metallized ceramic approach includes at least two options for bonding the metallized ceramic plate to copper.
- a first option is the brazed copper option where a copper sheet is brazed to both sides of the metallized ceramic plate.
- each copper sheet is plated with a thin layer of either silver or gold, which reacts with copper to form CuSiI or CuAu, respectively, during bonding.
- Figure 4 illustrates a cut-out side view of exemplary layers of a ceramic assembly 50 fabricated using a brazed copper option of a metallized ceramic approach according to a first embodiment, the view shown in Figure 4 is before a brazing process is performed.
- the first embodiment of the metallized ceramic approach uses a metallized ceramic plate and plated copper sheets.
- a ceramic plate 54 includes metallized layers 56 and 58. Copper sheet 51 is plated by a layer 52.
- Copper sheet 60 is plated by a layer 62.
- the plated layers 52 and 62 each have a thickness between about 1 micron and about 100 microns. In still other embodiments, the plated layers 52 and 62 each have a thickness of about 10 microns.
- a thin sheet of brazing alloy is placed between the metallized ceramic plate and each copper sheet.
- brazing alloy sheets include, but are not limited to, copper-silver-based sheets (CuSiI sheets) or copper-gold-based sheets (CuAu sheets).
- Figure 5 illustrates a cut-out side view of exemplary layers of a ceramic assembly 70 fabricated using a metallized ceramic approach according to a second embodiment, the view shown in Figure 5 is before a brazing process is performed.
- the second embodiment of the metallized ceramic approach uses brazing alloy sheets.
- a first brazing alloy sheet 74 is positioned between a metallized layer 78 of a ceramic plate 76 and a copper sheet 72.
- a second brazing alloy sheet 82 is positioned between a metallized layer 80 of the ceramic plate 76 and a copper sheet 84.
- the thickness of each brazing alloy sheet 74 and 82 is in the range of about 10 microns to about 100 microns. In still other embodiments, the thickness of each brazing alloy sheet 74 and 82 is about 25 microns.
- Figure 6 illustrates an exemplary process for fabricating a ceramic assembly according to the brazed copper option of the metallized ceramic approach.
- a metallized layer is applied to a top surface and a bottom surface of a ceramic plate.
- An exemplary process for applying the metallized layer includes applying a high temperature refractory material ink to the ceramic plate, and firing the ceramic plate and refractory material ink, electroplating a layer of Ni onto the refractory material layer, firing the ceramic plate, refractory material layer, and the Ni plating to form the metallized ceramic plate.
- the refractory material ink can be applied by screen printing or deposition.
- the refractory material layer has a thickness in the range of about 10 microns to about 20 microns
- the ceramic plate and refractory material ink are fired at a temperature of 2515 degrees Fahrenheit
- the Ni layer has a thickness of about 2 microns
- the ceramic plate, refractory material layer, and Ni plating are fired at a temperature of about 1380 degrees Fahrenheit.
- a brazing material is placed between the metallized ceramic layer and each of two copper sheets.
- the brazing material is either silver or gold which is plated onto each copper sheet.
- the brazing material is a brazing alloy sheet, such as a CuSiI sheet or a CuAu sheet, which is positioned between the metallized ceramic plate and each of the copper sheets.
- each copper sheet is made of any conventional copper alloy including, but not limited to, 110, 102, or 101 copper.
- the copper sheet and brazing material are assembled on both sides of the metallized ceramic plate.
- the assembly from step 144 is vacuum brazed, thereby forming the ceramic assembly.
- the brazing temperature of the step 146 is about 1510 degrees Fahrenheit.
- FIG. 7 illustrates a cut-out side view of exemplary layers of a ceramic assembly 90 fabricated using a plated copper option of a metallized ceramic approach according to a third embodiment.
- the third embodiment of the metallized ceramic approach uses a metallized ceramic plate which is then plated with copper.
- a ceramic plate 94 includes metallized layers 96 and 98. Copper is plated on top of the metallized layers 96 and 98 to form plated copper layers 92 and 100.
- Figure 8 illustrates an exemplary process for fabricating a ceramic assembly according to the plated copper option of the metallized ceramic approach.
- a metallized layer is applied to a top surface and a bottom surface of a ceramic plate, thereby forming a metallized ceramic plate.
- the step 150 is performed in a similar manner as the step 140 of Figure 6.
- the outer surface on the metallized ceramic plate undergoes a cleaning step to remove the oxide layers. This cleaning step enhances adhesion of plated copper.
- copper is plated onto each metallized layer of the metallized ceramic plate.
- Plating installation and fixtures are configured to take into consideration the current distribution aspects to provide uniform deposition of up to 300 micron thick copper layers on both sides of the metallized ceramic layer.
- the ceramic assemblies formed by the above methods include a joining layer formed by bonding an intermediate joining material between each copper layer and the ceramic layer.
- the intermediate joining material provides a strong bonding of copper to the ceramic plate.
- the intermediate joining material is shown Figures 1, 2, 4, 5, and 7 as a discrete layer distinct from the adjoining copper and ceramic layers, this is the condition prior to the brazing process that bonds the copper to the ceramic. Once the brazing process is completed, the intermediate joining material and the surfaces of the adjoining copper and ceramic layers diffuse together to form a mixed interface material, referred to as a joining layer.
- any reference to the bonded joining material after the brazing process is performed is intended to represent the joining layer.
- the ceramic assembly described above provides a single device interface surface to which a heat generating device can be coupled.
- multiple heat generating devices are to be coupled to the ceramic assembly.
- a larger sized ceramic plate is used. In some embodiments, the width of the ceramic plate is about 50 mm and the length of the ceramic plate is about 160 mm.
- electrically isolated copper pads are formed on one side of the ceramic assembly.
- both the copper layer and the joining layer are etched to the ceramic layer. It is necessary to completely etch down to the ceramic layer to provide electrical isolation for each pad. If any joining material remains to connect the pads, electrical isolation is not achieved as the joining layer is electrically conductive.
- Photopatterning includes selective removal of material through patterned photoresist and can be accomplished by wet etching or a combination of wet etching and physical methods of material removal, such as laser etching or bead blasting.
- the copper layer can be easily photopatterned using any conventional wet etch process.
- the joining layer is difficult to photopattern by wet etching.
- the joining layer can be wet etched but at the expense of over-etching the copper layer because copper is etched at a greater rate than the joining layer.
- a number of approaches are disclosed to pattern both the copper layer and the joining layer formed between the copper layer and the ceramic layer. The first approach uses a physical etch step.
- the physical etch step is any conventional physical method for removing material including, but not limited to, laser etching and bead blasting.
- the physical etch step is used either as part of a two step etching process or a single step etching process.
- a first wet etch step is performed to selectively etch the outer copper layer.
- a second physical etch step is then performed on the joining layer at the points exposed by the preceding wet etch performed on the copper layer.
- a physical etch step is performed to simultaneously etch both the copper layer and the joining layer.
- Figure 9 illustrates a cut out side view of an exemplary ceramic assembly 110.
- Figures 10-11 illustrate the two step etching process applied to the exemplary ceramic assembly 110.
- a joining layer 114 is formed between a ceramic layer 116 and a copper layer 112, and a joining layer 118 is formed between the ceramic layer 116 and a copper layer 120.
- Figure 10 shows a patterned copper layer 112' after an exemplary selective wet etch process is performed. The slopes 122 of the etched copper walls are exaggerated to indicate the effects of the wet etch process.
- Figure 11 shows a patterned joining layer 114' after a physical etch process is performed on the portions of the joining layer 114 exposed after the wet etch process.
- the patterned copper layer 112' and the patterned joining layer 114' form electrically isolated pads 130.
- the number and dimensions of the pads 130 shown in Figure 11 is for exemplary purposes only.
- the slopes 124 of the etched joining layer walls are steeper than the slopes 122 of the etched copper walls.
- the different slopes are an artifact of the two different etch processes.
- Figure 12 illustrates a magnified portion of the etched surfaces between two adjacent pads 130 to better illustrate the difference in the slope 122 of the etched copper wall and the slope 124 of the etched joining layer wall.
- the slopes 122 and 124 shown in Figures 9-12 are for exemplary purposes only.
- Figure 13 illustrates the two step etching process applied to the exemplary ceramic assembly 110 of Figure 9.
- Figure 13 shows a patterned copper layer 112" and a patterned joining layer 114" after an exemplary selective physical etch process is simultaneously performed on both layers.
- the patterned copper layer 112" and the patterned joining layer 114" form electrically isolated pads 130'.
- the number and dimensions of the pads 130' shown in Figure 13 is for exemplary purposes only.
- the slopes 122' of the etched copper walls and the slopes 124' of the etched joining layer walls are the same as both are formed using the single step physical etch process.
- a second approach for patterning both the copper layer and the joining layer uses patterned screen printings to selectively apply the intermediate joining material on each side of the ceramic layer.
- Figures 14-17 illustrate the second approach for patterning both the copper layer and the joining layer while fabricating an exemplary ceramic assembly 160.
- a screen printed pattern of intermediate joining material 164 is applied to a first surface of a ceramic plate 166
- a screen printed pattern of intermediate joining material 168 is applied to a second surface of the ceramic plate 166.
- the intermediate joining material 164 and 168 is either an ink or paste to enable the screen printing application.
- the thickness of the intermediate joining material is between several microns to 100s of microns. In still other embodiments, the thickness of the intermediate joining material is about 25 microns.
- the intermediate joining layer 168 is not patterned, similarly to the ceramic assembly 110 in Figures 9-13.
- a ceramic assembly can be patterned on one or both sides depending on the application.
- a copper sheet 162 is positioned against the patterned intermediate joining material 164, and a copper sheet 170 is positioned against the patterned intermediate joining material 168.
- the assembly is then brazed.
- the brazing temperature is determined by the type of intermediate joining material used, such as described in Table 1.
- a photoresist layer 172 is applied and patterned on the copper sheet 162, and a photoresist layer 174 is applied and patterned on the copper sheet 170.
- the photoresist layer 172 is patterned to match the patterned joining material 164, and the photoresist layer 174 is patterned to match the patterned joining material 168.
- the copper sheets 162 and 170 are selectively etched. In some embodiments, the copper sheets are etched using a wet etch process.
- the photoresist layers 172 and 174 are then removed.
- the result is a plurality of electrically isolated conductive pads 180.
- the number and dimensions of the pads 180 shown in Figure 17 is for exemplary purposes only. Using either the first approach, shown in Figures 9-13, or the second approach, shown in Figures 14- 17, electrical isolation of the conductive pads can be verified by measuring resistivity between the pads.
- the final step in fabricating the ceramic assembly is laser machining of the assembly to provide drilled alignment holes and final shaping of the assembly.
- the microheat exchanger is made of a thermally conductive material. In some embodiments, the microheat exchanger is made of copper.
- the microheat exchanger includes fluid pathways that enable fluid flow through the microheat exchanger. Heat is transferred from the thermally conductive material to fluid flowing through the microheat exchanger.
- the microheat exchanger includes one or more fluid input ports and one or more fluid output ports to enable fluid flow into and out of the microheat exchanger.
- fluid pathways within the microheat exchanger are formed from cross hatched patterned fin design to provide flow uniformity either across the entire microheat exchanger or to select portions of the microheat exchanger.
- the fluid pathways are designed to provide flow uniformity over the length of each heat generating device coupled to the conductive pads on the ceramic assembly.
- the patterned fins are brazed to the microheat exchanger body using a CuSiI sheet.
- the thickness of the CuSiI sheet is in the range of about 10 micrometer to about 100 micrometers. In still other embodiments, the thickness of the CuSiI sheet is about 25 microns. It is understood that any conventional microheat exchanger that includes fluid flow therethrough can be used.
- the Microheat Exchanging Assembly involves placing and aligning a first ceramic assembly, the microheat exchanger, and a second ceramic assembly in a fixture and brazing the fixed assembly in a vacuum or forming gas furnace. In some embodiments, only a single ceramic assembly is brazed to the microheat exchanger. A joining material is used to braze each ceramic assembly to the microheat exchanger. Where the microheat exchanger is made of copper and the bottom conducting layer of the ceramic assembly is also a copper layer, the joining material is a copper-to-copper joining material. In some embodiments, the joining material is a CuSiI paste or CuSiI foil. In an exemplary application, an eutectic CuSiI joining material is made of 72% silver and 28% copper, having a melting temperature of 1435 degrees
- the joining material is a solder paste or a solder foil. In general, any conventional metal-to-metal joining material can be used.
- the thickness of the joining material is in the range of about 10 micrometer to about 100 micrometers. In still other embodiments, the thickness of the joining material is about 25 microns.
- the microheat exchanger body is plated with silver which forms CuSiI during brazing. In some embodiments, the silver plating thickness is between about 1 micron and about 100 microns. In still other embodiments, the thickness of the silver plating is about 10 microns.
- Figure 18 illustrates an exemplary process for fabricating a microheat exchanging assembly according to an embodiment.
- a first ceramic assembly and a joining material are assembled on a first surface of a microheat exchanger.
- a second ceramic assembly and a joining material are assembled on a second surface of the microheat exchanger.
- the joining material can be either paste or a foil.
- one or more surfaces of the first ceramic assembly are patterned.
- one or more surfaces of both the first ceramic assembly and the second ceramic assembly are patterned.
- the step 192 is not performed and only a single ceramic assembly and joining material are assembled to the microheat exchanger.
- the first ceramic assembly, the joining material, the microheat exchanger, the joining material, and the second ceramic assembly are brazed, thereby forming the microheat exchanging assembly.
- FIG 19 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly 210 with the ceramic assemblies fabricated using the bare ceramic approach.
- the microheat exchanging assembly 210 includes a patterned ceramic assembly bonded to a first surface of a microheat exchanger 224, and a ceramic assembly bonded to a second surface of the microheat exchanger 224.
- the patterned ceramic assembly includes a patterned copper layer 212, a patterned ABA joining layer 214, a ceramic plate 216, an ABA j oining layer 218, and a copper layer 220.
- the copper layer 212 and the j oining layer 214 are patterned to form electrically isolated conductive pads 238.
- the copper layer 220 is bonded to the microheat exchanger 224 via joining layer 222.
- the ceramic assembly includes a copper layer 228, an ABA joining layer 230, a ceramic plate 232, an ABA joining layer 234, and a copper layer 236.
- the copper layer 228 is bonded to the microheat exchanger 224 via joining layer 226.
- the copper layer 212 and the joining layer 214 are shown to be patterned in Figure 19, it is understood that the copper layer 220 and the joining layer 218, the copper layer 228 and the joining layer 230, and/or the copper layer 236 and the joining layer 234 can be patterned according to the application.
- the ABA joining material can be applied as a foil or a paste.
- the ABA joining material is Cu-ABA, CuSiI-ABA, or InCuSiI-ABA.
- the joining material used for the joining layers 222 and 226 is a CuSiI paste or a CuSiI foil.
- the joining material is a solder paste or a solder foil.
- Figure 20 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly 310 with the ceramic assemblies fabricated using the brazed copper option of the metallized ceramic approach.
- the microheat exchanging assembly 310 includes a patterned ceramic assembly bonded to a first surface of a microheat exchanger 328, and a ceramic assembly bonded to a second surface of the microheat exchanger 328.
- the patterned ceramic assembly includes a patterned copper layer 312, a patterned joining layer 314, ametallized layer 316, a ceramic plate 318, a metallized layer 320, a joining layer 322, and a copper layer 324.
- the copper layer 312, the joining layer 314, and the metallized layer 316 are patterned to form electrically isolated conductive pads 346.
- the copper layer 324 is bonded to the microheat exchanger 328 via joining layer 326.
- the ceramic assembly includes a copper layer 332, a joining layer 334, a metallized layer 336, a ceramic plate 338, a metallized layer 340, ajoining layer 342, and a copper layer 344.
- the copper layer 332 is bonded to the microheat exchanger 328 via joining layer 330.
- the copper layer 312, the joining layer 314, and the metallized layer 316 are shown to be patterned in Figure 20, it is understood that the copper layer 324, the joining layer 322, and the metallized layer 320, the copper layer 332, the joining layer 334, and the metallized layer 336, and/or the copper layer 344, the joining layer 342, and the metallized layer 340 can be patterned according to the application.
- the metallized layer includes refractory materials, such as molybdenum manganese (MoMn), titanium (Ti), or tungsten (W), plated with nickel.
- the joining material used to form the joining layers 314, 322, 334, and 342 can be applied as a foil or a paste.
- the joining material is a CuSiI or CuAu paste or a CuSiI or CuAu foil.
- the joining material and copper layer are combined as a silver plated copper sheet.
- the joining material used for the joining layers 326 and 330 is a CuSiI paste or a CuSiI foil.
- the joining material is a solder paste or a solder foil. In general, any conventional metal-to-metal joining material can be used for the joining layers 326 and 330.
- FIG. 21 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly 410 with the ceramic assemblies fabricated using the plated copper option of the metallized ceramic approach.
- the microheat exchanging assembly 410 includes a patterned ceramic assembly bonded to a first surface of a microheat exchanger 424, and a ceramic assembly bonded to a second surface of the microheat exchanger 424.
- the patterned ceramic assembly includes a patterned copper layer 412, a patterned metallized layer 414, a ceramic plate 416, a metallized layer 418, and a copper layer 420.
- the copper layer 412 and the metallized layer 414 are patterned to form electrically isolated conductive pads 438.
- the copper layer 420 is bonded to the microheat exchanger 424 viajoining layer 422.
- the ceramic assembly includes a copper layer 428, a metallized layer 430, a ceramic plate 432, a metallized layer 434, and a copper layer 436.
- the copper layer 428 is bonded to the microheat exchanger 424 viajoining layer 426.
- the copper layer 412 and the metallized layer 414 are shown to be patterned in Figure 21, it is understood that the copper layer 420 and the metallized layer 418, the copper layer 428 and the metallized layer 430, and/or the copper layer 436 and the metallized layer 434 can be patterned according to the application.
- the metallized layer includes refractory materials, such as molybdenum manganese (MoMn), titanium (Ti), or tungsten (W), plated with nickel.
- the joining material can be applied as a foil or a paste.
- the joining material is a CuSiI or CuAu paste or a CuSiI or a CuAu foil.
- the joining material is a solder paste or a solder foil.
- any conventional metal-to-metal joining material can be used for the joining layers 422 and 426.
- microheat exchanging assemblies are described above as bonding an outer surface of the ceramic assembly to an outer surface of the microheat exchanger via a joining material.
- an intermediate layer, layers stack, block, or device such as an additional microheat exchanger, can be positioned between the ceramic assembly and the microheat exchanger, where the intermediate layer, layers stack, block, or device is thermally conductive and includes outer surfaces conducive for bonding with the outer surface of the ceramic assembly and the outer surface of the microheat exchanger as described above.
Abstract
A ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. The ceramic layer has high thermal conductivity and high electrical resistivity. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer. The top conductive layer and the joining layer are etched to form the electrically isolated conductive pads. The conductive layers are bonded to the ceramic layer using a bare ceramic approach or a metallized ceramic approach.
Description
BONDED METAL AND CERAMIC PLATES FOR THERMAL MANAGEMENT OF
OPTICAL AND ELECTRONIC DEVICES
Related Applications This application claims priority of U.S. provisional application, serial number
61/188,078, filed August 5, 2008, and entitled "Fabrication of Microheat Exchanger for Laser Diode Cooling", by these same inventors. This application incorporates U.S. provisional application, serial number 61/188,078 in its entirety by reference.
Field of the Invention
The invention relates to a microheat exchanger and a method of fabrication of the same. More particularly, this invention relates to a microheat exchanger and a method of fabrication, where the microheat exchanger is used for laser diode cooling.
Background of the Invention
Microheat exchangers are made of thermally conductive material and are used to transfer heat from a heat generating device, such as an integrated circuit or a laser diode, to a fluid flowing through fluid pathways within the microheat exchanger. Microheat exchangers are commonly made of metal, such as copper, and electrical isolation is often required between the heat generating device and the microheat exchanger. Some ceramic materials are thermally conductive yet electrically resistant. For this reason, such ceramic materials are often used as an intermediate material between a heat generating device and a microheat exchanger to provide electrical isolation while still maintaining thermal conductivity. However, it is not practical to connect a heat generating device directly to ceramic. Instead, the heat generating device is coupled to a conductive pad, typically made of a conductive metal such as copper. In such a configuration, the ceramic is middle layer between the conductive copper pad coupled to the heat generating device and the microheat exchanger.
In order to provide efficient heat transfer from the heat generating device to the microheat exchanger, a good thermal interface between ceramic and copper is necessary. A direct bonded copper (DBC) method uses a high temperature joining process to bond a copper sheet to a ceramic plate in the presence of a protective gas atmosphere having small amounts of oxygen (50-200 ppm). Exemplary DBC methods are described in U.S. Patent Number 6,297,469 and U.S. Patent Number 7,036,711, which are hereby incorporated in their entirety by reference. Three commonly used ceramic materials are beryllium oxide (BeO), aluminum oxide (Al2O3), and aluminum nitride (AlN). Oxygen and copper bond
together under high temperature. The copper and ceramic are heated to a carefully controlled temperature, in an atmosphere of nitrogen and a small percentage of oxygen. The temperature used is in the range between 1950 and 1981 degrees Fahrenheit, which is close to the melting temperature of copper. Under these conditions, a copper-oxygen eutectic forms which bonds successfully both to copper and the ceramic, thereby bonding a copper layer to a ceramic layer. The copper layer is used as a conductive pad to be coupled to a heat generating device. The ceramic layer is typically soldered to the top of the microheat exchanger.
Many problems exist with bonding in general and the DBC technique in particular. First, application of high temperature to rigid ceramic plates often results in cracking of the ceramic. Second, microvoids are formed at the interface of the bonded copper and ceramic layers. The microvoids are due to the imperfections and irregularities in the contact surfaces of the copper and ceramic layers. For applications where a large heat generating device, or multiple heat generating devices are coupled to a single ceramic plate, the size of the ceramic plate is larger. However, the larger the ceramic plate, the greater the impact of the microvoids. Presence of microvoids reduces thermal efficiency. Further, presence of microvoids increases the chances that the copper layer and the ceramic layer will delaminate because there is not a perfect bond across the entire interface surface.
Third, the thermal coefficient of expansion for copper is much greater than that for ceramic. During the high temperature DBC process, the copper layer expands more so than the ceramic, at which point the ceramic layer and the copper layer are bonded. However, upon cooling the copper layer contracts more so than the ceramic, due to the differing thermal coefficients of expansion, which leads to warping and possible cracking of the bonded copper-ceramic assembly.
Summary of the Invention
A microheat exchanging assembly is configured to cool one or more heat generating devices, such as integrated circuits or laser diodes. In some embodiments, the microheat exchanging assembly includes a first ceramic assembly thermally coupled to a first surface, and in some embodiments, a second ceramic assembly thermally coupled to a second surface. Each ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. Each ceramic assembly includes a ceramic layer to provide this electrical isolation. The ceramic layer has high thermal conductivity and high electrical resistivity. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer,
such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer. The top conductive layer and the joining layer are etched to form the electrically isolated conductive pads. The conductive layers are bonded to the ceramic layer using a bare ceramic approach or a metallized ceramic approach.
In one aspect, a device includes a first copper layer, a ceramic layer, a second copper layer, a first active brazing alloy bonded between the first copper layer and the ceramic layer to form a first joining layer, and a second active brazing alloy bonded between the ceramic layer and the second copper layer to form a second joining layer. In some embodiments, the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride. In some embodiments, the first active brazing alloy layer and the second active brazing alloy layer are a copper-based active brazing alloy, a copper-silver-based active brazing alloy, or an indium- copper-silver-based active brazing alloy. In some embodiments, the first active brazing alloy layer and the second active brazing alloy layer are an active joining material paste. In other embodiments, the first active brazing alloy layer and the second active brazing alloy layer are an active joining material foil.
In another aspect, a device includes a first copper layer, a ceramic layer, a second copper layer, a first active brazing alloy layer bonded between the first copper layer and the ceramic layer to form a first joining layer, wherein the first copper layer and the first joining layer are configured to form a plurality of electrically isolated conductive pads, and a second active brazing alloy layer bonded between the ceramic layer and the second copper layer to form a second joining layer. In some embodiments, the first copper layer and the first joining layer are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer. In some embodiments, each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the first joining layer to a first surface of the ceramic layer, the first surface of the first copper layer is distal from the first joining layer, and the first surface of the ceramic layer is proximate to the first joining layer, further wherein a slope of the etched wall is uniform through the first copper layer and the first joining layer. In other embodiments, each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the first joining layer to a first surface of the ceramic layer, the first surface of the first copper layer is distal from the first joining layer, and the first surface of
the ceramic layer is proximate to the first joining layer, further wherein a slope of the etched wall through the first joining layer is steeper than a slope of the etched wall through the first copper layer. In some embodiments, the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride. In some embodiments, the first active brazing alloy layer and the second active brazing alloy layer are a copper-based active brazing alloy, a copper-silver- based active brazing alloy, or an indium-copper-silver-based active brazing alloy. In some embodiments, the first active brazing alloy layer and the second active brazing alloy layer are an active joining material paste. In other embodiments, the first active brazing alloy layer and the second active brazing alloy layer are an active joining material foil. In yet another aspect, a device includes a first copper layer, a ceramic layer including a metallized first surface and a metallized second surface, a second copper layer, a first copper and ceramic joining layer bonded between the first copper layer and the metallized first surface of the ceramic layer to form a first joining layer, wherein the first copper layer, the first joining layer, and the metallized first surface are configured to form a plurality of electrically isolated conductive pads, and a second copper and ceramic joining layer bonded between the metallized second surface of the ceramic layer and the second copper layer to form a second joining layer. In some embodiments, the first copper layer, the first joining layer, and the metallized first surface are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer. In some embodiments, each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer, the first joining layer, and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall is uniform through the first copper layer, the first joining layer, and the metallized first surface. In other embodiments, each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer, the first joining layer, and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall through the first joining layer is steeper than a slope of the etched wall through the first copper layer. In some embodiments, the metallized first surface is molybdenum manganese and nickel. In some embodiments, the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride. In some embodiments, the first copper and ceramic joining layer and the second copper and ceramic joining layer are a copper-silver paste, a copper-silver foil, a copper-gold paste, or a copper-gold foil. In some embodiments, the first copper and ceramic joining layer and the first copper layer are a first silver plated copper sheet, and the second
copper and ceramic joining layer and the second copper layer are a second silver plated copper sheet.
In another aspect, a device includes a ceramic layer including a metallized first surface and a metallized second surface, a first copper layer plated to the metallized first surface, wherein the first plated copper layer and the metallized first surface are configured to form a plurality of electrically isolated conductive pads, and a second copper layer plated to the metallized second surface. In some embodiments, the first copper layer and the metallized first surface are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer. In some embodiments, each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall is uniform through the first copper layer and the metallized first surface. In some embodiments, each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the metallized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall through the metallized first surface is steeper than a slope of the etched wall through the first copper layer. In some embodiments, the metallized first surface is molybdenum manganese and nickel. In some embodiments, the ceramic layer is beryllium oxide, aluminum oxide, or aluminum nitride.
Other features and advantages of the ceramic assembly will become apparent after reviewing the detailed description of the embodiments set forth below.
Brief Description of the Drawings
Figure 1 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a bare ceramic approach according to a first embodiment, the view shown in Figure 1 is before a brazing process is performed. Figure 2 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a bare ceramic approach according to a second embodiment, the view shown in Figure 1 is before a brazing process is performed.
Figure 3 illustrates an exemplary process for fabricating a ceramic assembly according to the bare ceramic approach. Figure 4 illustrates a cut-out side view of exemplary layers of a ceramic assembly
fabricated using a brazed copper option of a metallized ceramic approach according to a first embodiment, the view shown in Figure 4 is before a brazing process is performed.
Figure 5 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a metallized ceramic approach according to a second embodiment, the view shown in Figure 5 is before a brazing process is performed.
Figure 6 illustrates an exemplary process for fabricating a ceramic assembly according to the brazed copper option of the metallized ceramic approach.
Figure 7 illustrates a cut-out side view of exemplary layers of a ceramic assembly fabricated using a plated copper option of a metallized ceramic approach according to a third embodiment.
Figure 8 illustrates an exemplary process for fabricating a ceramic assembly according to the plated copper option of the metallized ceramic approach.
Figure 9 illustrates a cut out side view of an exemplary ceramic assembly.
Figures 10-11 illustrate the two step etching process applied to the exemplary ceramic assembly of Figure 9.
Figure 12 illustrates a magnified portion of the etched surfaces between two adjacent pads.
Figure 13 illustrates the two step etching process applied to the exemplary ceramic assembly of Figure 9. Figures 14-17 illustrate the second approach for patterning both the copper layer and the joining layer while fabricating an exemplary ceramic assembly.
Figure 18 illustrates an exemplary process for fabricating a microheat exchanging assembly according to an embodiment.
Figure 19 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly with the ceramic assemblies fabricated using the bare ceramic approach.
Figure 20 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly with the ceramic assemblies fabricated using the brazed copper option of the metallized ceramic approach. Figure 21 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly with the ceramic assemblies fabricated using the plated copper option of the metallized ceramic approach.
The ceramic assembly is described relative to the several views of the drawings. Where appropriate and only where identical elements are disclosed and shown in more than
one drawing, the same reference numeral will be used to represent such identical elements.
Detailed Description of the Present Invention
Reference will now be made in detail to the embodiments of the ceramic assembly, examples of which are illustrated in the accompanying drawings. While the ceramic assembly will be described in conjunction with the embodiments below, it will be understood that they are not intended to limit the ceramic assembly to these embodiments and examples. On the contrary, the ceramic assembly is intended to cover alternatives, modifications and equivalents, which may be included within the spirit and scope of the ceramic assembly as defined by the appended claims. Furthermore, in the following detailed description of the ceramic assembly, numerous specific details are set forth in order to more fully illustrate the ceramic assembly. However, it will be apparent to one of ordinary skill in the prior art that the ceramic assembly may be practiced without these specific details. In other instances, well-known methods and procedures, components and processes have not been described in detail so as not to unnecessarily obscure aspects of the ceramic assembly.
Embodiments are directed to a microheat exchanging assembly and a ceramic assembly and methods of fabricating each. The microheat exchanging assembly is configured to cool one or more heat generating devices, such as electronic devices. In some embodiments, the microheat exchanging assembly includes a plurality of electrically and thermally conductive pads, each conductive pad is electrically isolated from each other. The heat generating device is electrically and thermally coupled to the conductive pad using any conventional method, such as soldering. In an exemplary application, each pad is coupled to one of an array of laser diodes used in high power lasers for industrial cutting and marking applications. In such an application, the microheat exchanging assembly is referred to a microheat exchanger for laser diodes (MELD™). The microheat exchanging assembly is particularly applicable to those applications requiring the arrangement of multiple heat generating devices in a common plane, such as a laser diode array. By electrically isolating each conductive pad, the heat generating devices coupled to the conductive pads are electrically isolated from each other while maintaining a uniform high rate of heat transfer from each heat generating device to a microheat exchanger. To provide this electrical isolation a ceramic layer with high thermal conductivity and high electrical resistivity is used. In some embodiments, the ceramic layer is made of beryllium oxide, aluminum oxide, or aluminum nitride. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer using an intermediate joining material. Brazing of the joining material
during the bonding process enables the liquidus joining material to melt, which provides a localized "flow" of material into the micro voids on the contact surfaces of the ceramic and conductive layers, thereby improving thermal efficiency. In some embodiments, each conductive layer is copper. The top conductive layer and the intermediate joining material are etched to form the electrically isolated conductive pads. The bonded ceramic and conductive layers form a first ceramic assembly.
The bottom conductive layer of the first ceramic assembly is bonded to a top surface of a microheat exchanger through which a cooling fluid circulates. The microheat exchanger is made of a thermally conductive material. In some embodiments, the microheat exchanger is made of copper. Heat is transferred from the heat generating devices coupled to the conductive pads to the fluid flowing through the microheat exchanger.
In some embodiments, a second ceramic assembly is formed and bonded to a bottom surface of the microheat exchanger. The second ceramic assembly can also include a plurality of electrically isolated conductive pads, which can be patterned the same or differently than those on the first ceramic assembly.
Fabrication of the microheat exchanging assembly includes the general steps of fabricating the ceramic assembly, fabricating the microheat exchanger, and final assembly and brazing of the microheat exchanging assembly.
A. Fabrication of the Ceramic Assembly
A ceramic assembly is formed by bonding a conductive layer to both sides of a thin ceramic plate using an intermediate joining material. In some embodiments, each conductive layer is a copper layer. In some embodiments, the ceramic plate is made of beryllium oxide (BeO), aluminum oxide (Al2O3), or aluminum nitride (AlN). The use of BeO may find restrictions due to its toxicity. Optimum thickness of the ceramic plate is dictated by the ability to minimize heat transfer resistance while maintaining mechanical strength of the bonded layer. The heat transfer resistance is reduced as the thickness of the ceramic plate is reduced, but the mechanical strength is increased as the thickness of the ceramic plate is increased. In some embodiments, the ceramic plate thickness varies from about 100 micrometers to several millimeters. In still other embodiments, the thickness of the ceramic plate is in the range of about 0.5 mm to about 0.75 mm. The thickness of each copper layer is dictated by the extent of warping of the assembled unit and the need for grinding the copper layer for its planarization. In some embodiments, the copper layer thickness is in the range of about 0.05 mm to about 0.5 mm. In still other embodiments, the thickness of the
copper layer is about 0.25 mm. In some embodiments, the surface area of the ceramic assembly is in the range of about 1250 mm2 to about 8000 mm2.
A requirement of the fabrication of the ceramic assembly is to provide excellent bonding of the copper layers to the ceramic plate. Other than the ceramic plate, the remaining layers of the ceramic assembly are able to be patterned by selective removal of the copper layer and joining materials for making electrically isolated patterned copper pads. Various techniques for bonding copper to both sides of a ceramic plate are disclosed. One approach is the bare ceramic approach which uses active brazing alloy (ABA) materials such as copper-based ABA (Cu-ABA); copper and silver-based ABA (CuSiI-ABA); and indium, copper, and silver-based ABA (InCuSiI-ABA). Each of these ABAs is copper rich, and therefore provides good thermal conductivity. Each of these ABAs include a small amount of an active ingredient to bind with ceramic. In some embodiments, each of these ABAs includes titanium (Ti) as an active ingredient. Titanium in the ABA reacts with the ceramic plate and the copper layer to provide a chemical bond, resulting in a joining layer interface formed between the copper layer and the ceramic plate. It is understood that alternative
ABAs including one or more active ingredients other than titanium can be used to bind with ceramic.
Further, the use of a brazing material as the intermediate joining material provides material "flow" into the micro voids of the contact surfaces. Brazing is a joining process whereby a joining material, such as a metal or alloy, is heated to a melting temperature. At the melting temperature, the liquidus joining material interacts with a thin layer of the base metal, cooling to form a strong, sealed joint. The resulting joining layer is a blend of the ABA material, the copper layer, and the ceramic layer. The melting temperature of the braze material is lower than the melting temperature of the materials being joined. Using the brazing process to bond the ceramic layer to the copper layer, the brazing temperature is lower than a conventional temperature used to direct copper bond the two layers together. Reducing the temperature also reduces the warping effects on the cooled copper-ceramic assembly.
Table 1 shows the composition and melting temperature of some selected active brazing alloys used in the copper and ceramic bonding process:
Table 1
In some embodiments, each copper layer is a copper sheet and the ABA is used in a paste form. The ABA paste can be sprayed or screen printed on either both sides of the ceramic plate or on one side of each copper sheet that is to be attached to the ceramic plate. Figure 1 illustrates a cut-out side view of exemplary layers of a ceramic assembly 10 fabricated using a bare ceramic approach according to a first embodiment, the view shown in Figure 1 is before a brazing process is performed. The first embodiment of the bare ceramic approach uses an ABA paste. The ABA paste can be applied either to one side of each copper sheet, as shown in Figure 1 as ABA paste 14 applied to copper sheet 12 and ABA paste 18 applied to copper sheet 20, or to both sides of a ceramic plate 16. In some embodiments, the thickness of the ABA paste varies between several microns to 100s of microns. In still other embodiments, the thickness of the ABA paste is about 25 microns.
In other embodiments, an ABA foil is placed between the ceramic plate and each copper sheet. Figure 2 illustrates a cut-out side view of exemplary layers of a ceramic assembly 30 fabricated using a bare ceramic approach according to a second embodiment, the view shown in Figure 1 is before a brazing process is performed. The second embodiment of the bare ceramic approach uses ABA foils. A first ABA foil 34 is positioned between one side of a ceramic plate 36 and a copper sheet 32, and a second ABA foil 38 is positioned between the other side of the ceramic plate 36 and a copper sheet 40. In some
embodiments, the thickness of each ABA foil 34 and 38 is in the range of about 10 microns to about 100 microns. In still other embodiments, the thickness of each ABA foil 34 and 38 is about 25 microns.
Figure 3 illustrates an exemplary process for fabricating a ceramic assembly according to the bare ceramic approach. At the step 22, the copper layer and ABA material are assembled on both sides of the ceramic plate. The ABA material can be either paste of a foil. At the step 24, the copper, ABA material, ceramic plate, ABA material, and copper assembly are vacuum brazed, thereby forming the ceramic assembly. Since the ABAs described in this bonding process contain titanium, the use of forming gas (95% Nitrogen/5% Hydrogen) must be avoided since using such gas in the brazing process with these alloys forms titanium hydride, which prevents chemical bonding of ceramic to copper. The copper layer is made of any conventional copper alloy including, but not limited to, 110, 102, or 101 copper. When the ABA material is Cu-ABA, the brazing temperature is in the range of about 1840 to about 1890 degrees Fahrenheit. When the ABA material is CuSiI-ABA, the brazing temperature is in the range of about 1460 to about 1520 degrees Fahrenheit. When the ABA material is InCuSiI-ABA, the brazing temperature is in the range of about 1280 to about 1340 degrees Fahrenheit.
Another approach for bonding copper to both sides of a ceramic plate is the metallized ceramic approach which uses a high temperature refractory material including, but not limited to, molybdenum manganese (MoMn), titanium (Ti), or tungsten (W). In some embodiments, the refractory materials, such as MoMn paste, are screen printed onto each side of a ceramic plate. In other embodiments, the refractory materials, such as titanium or tungsten, are deposited by physical vapor deposition (PVD) onto a first side and a second side of a ceramic plate. The next step of metallization is to provide a thin layer coating of electrolytically or electrolessly deposited nickel, thereby forming a metallized ceramic plate.
The nickel layer enables joining of the metallized ceramic plate to copper, or electroplating of copper directly onto the metallized ceramic plate. The metallized ceramic approach includes at least two options for bonding the metallized ceramic plate to copper.
A first option is the brazed copper option where a copper sheet is brazed to both sides of the metallized ceramic plate. In some embodiments, each copper sheet is plated with a thin layer of either silver or gold, which reacts with copper to form CuSiI or CuAu, respectively, during bonding. Figure 4 illustrates a cut-out side view of exemplary layers of a ceramic assembly 50 fabricated using a brazed copper option of a metallized ceramic approach according to a first embodiment, the view shown in Figure 4 is before a brazing process is performed. The first embodiment of the metallized ceramic approach uses a
metallized ceramic plate and plated copper sheets. As shown in Figure 4, a ceramic plate 54 includes metallized layers 56 and 58. Copper sheet 51 is plated by a layer 52. Copper sheet 60 is plated by a layer 62. In some embodiments, the plated layers 52 and 62 each have a thickness between about 1 micron and about 100 microns. In still other embodiments, the plated layers 52 and 62 each have a thickness of about 10 microns.
In other embodiments, a thin sheet of brazing alloy is placed between the metallized ceramic plate and each copper sheet. Examples of brazing alloy sheets include, but are not limited to, copper-silver-based sheets (CuSiI sheets) or copper-gold-based sheets (CuAu sheets). Figure 5 illustrates a cut-out side view of exemplary layers of a ceramic assembly 70 fabricated using a metallized ceramic approach according to a second embodiment, the view shown in Figure 5 is before a brazing process is performed. The second embodiment of the metallized ceramic approach uses brazing alloy sheets. A first brazing alloy sheet 74 is positioned between a metallized layer 78 of a ceramic plate 76 and a copper sheet 72. A second brazing alloy sheet 82 is positioned between a metallized layer 80 of the ceramic plate 76 and a copper sheet 84. In some embodiments, the thickness of each brazing alloy sheet 74 and 82 is in the range of about 10 microns to about 100 microns. In still other embodiments, the thickness of each brazing alloy sheet 74 and 82 is about 25 microns.
Figure 6 illustrates an exemplary process for fabricating a ceramic assembly according to the brazed copper option of the metallized ceramic approach. At the step 140, a metallized layer is applied to a top surface and a bottom surface of a ceramic plate. An exemplary process for applying the metallized layer includes applying a high temperature refractory material ink to the ceramic plate, and firing the ceramic plate and refractory material ink, electroplating a layer of Ni onto the refractory material layer, firing the ceramic plate, refractory material layer, and the Ni plating to form the metallized ceramic plate. The refractory material ink can be applied by screen printing or deposition. In some embodiments, the refractory material layer has a thickness in the range of about 10 microns to about 20 microns, the ceramic plate and refractory material ink are fired at a temperature of 2515 degrees Fahrenheit, the Ni layer has a thickness of about 2 microns, and the ceramic plate, refractory material layer, and Ni plating are fired at a temperature of about 1380 degrees Fahrenheit.
At the step 142, a brazing material is placed between the metallized ceramic layer and each of two copper sheets. In some embodiments, the brazing material is either silver or gold which is plated onto each copper sheet. In other embodiments, the brazing material is a brazing alloy sheet, such as a CuSiI sheet or a CuAu sheet, which is positioned between the metallized ceramic plate and each of the copper sheets. In either case, each copper sheet is
made of any conventional copper alloy including, but not limited to, 110, 102, or 101 copper. At a step 144, the copper sheet and brazing material are assembled on both sides of the metallized ceramic plate. At the step 146, the assembly from step 144 is vacuum brazed, thereby forming the ceramic assembly. In some embodiments, the brazing temperature of the step 146 is about 1510 degrees Fahrenheit.
A second option of the metallized ceramic approach for bonding the metallized ceramic plate to copper is the plated copper option which electroplates copper onto both sides of the metallized ceramic plate. Figure 7 illustrates a cut-out side view of exemplary layers of a ceramic assembly 90 fabricated using a plated copper option of a metallized ceramic approach according to a third embodiment. The third embodiment of the metallized ceramic approach uses a metallized ceramic plate which is then plated with copper. As shown in Figure 7, a ceramic plate 94 includes metallized layers 96 and 98. Copper is plated on top of the metallized layers 96 and 98 to form plated copper layers 92 and 100.
Figure 8 illustrates an exemplary process for fabricating a ceramic assembly according to the plated copper option of the metallized ceramic approach. At the step 150, a metallized layer is applied to a top surface and a bottom surface of a ceramic plate, thereby forming a metallized ceramic plate. The step 150 is performed in a similar manner as the step 140 of Figure 6. To enhance adhesion of plated copper, at the step 152, the outer surface on the metallized ceramic plate undergoes a cleaning step to remove the oxide layers. This cleaning step enhances adhesion of plated copper. At the step 154, copper is plated onto each metallized layer of the metallized ceramic plate. Plating installation and fixtures are configured to take into consideration the current distribution aspects to provide uniform deposition of up to 300 micron thick copper layers on both sides of the metallized ceramic layer. The ceramic assemblies formed by the above methods include a joining layer formed by bonding an intermediate joining material between each copper layer and the ceramic layer. The intermediate joining material provides a strong bonding of copper to the ceramic plate. The intermediate joining material is shown Figures 1, 2, 4, 5, and 7 as a discrete layer distinct from the adjoining copper and ceramic layers, this is the condition prior to the brazing process that bonds the copper to the ceramic. Once the brazing process is completed, the intermediate joining material and the surfaces of the adjoining copper and ceramic layers diffuse together to form a mixed interface material, referred to as a joining layer. It is understood that any reference to the bonded joining material after the brazing process is performed is intended to represent the joining layer. The ceramic assembly described above provides a single device interface surface to
which a heat generating device can be coupled. In some applications, multiple heat generating devices are to be coupled to the ceramic assembly. To accommodate multiple heat generating devices, a larger sized ceramic plate is used. In some embodiments, the width of the ceramic plate is about 50 mm and the length of the ceramic plate is about 160 mm. However, if the heat generating devices are coupled to the ceramic assembly with the single device interface surface, there is not electrical isolation between each of the coupled heat generating devices. Therefore, to provide electrical isolation between each of the multiple heat generating devices, electrically isolated copper pads are formed on one side of the ceramic assembly. To electrically isolate each pad, both the copper layer and the joining layer are etched to the ceramic layer. It is necessary to completely etch down to the ceramic layer to provide electrical isolation for each pad. If any joining material remains to connect the pads, electrical isolation is not achieved as the joining layer is electrically conductive.
Photopatterning includes selective removal of material through patterned photoresist and can be accomplished by wet etching or a combination of wet etching and physical methods of material removal, such as laser etching or bead blasting. The copper layer can be easily photopatterned using any conventional wet etch process. However, the joining layer is difficult to photopattern by wet etching. The joining layer can be wet etched but at the expense of over-etching the copper layer because copper is etched at a greater rate than the joining layer. A number of approaches are disclosed to pattern both the copper layer and the joining layer formed between the copper layer and the ceramic layer. The first approach uses a physical etch step. The physical etch step is any conventional physical method for removing material including, but not limited to, laser etching and bead blasting. The physical etch step is used either as part of a two step etching process or a single step etching process. In the two step etching process, a first wet etch step is performed to selectively etch the outer copper layer. A second physical etch step is then performed on the joining layer at the points exposed by the preceding wet etch performed on the copper layer. In the single etch step, a physical etch step is performed to simultaneously etch both the copper layer and the joining layer.
Figure 9 illustrates a cut out side view of an exemplary ceramic assembly 110. Figures 10-11 illustrate the two step etching process applied to the exemplary ceramic assembly 110. As shown in Figure 9, a joining layer 114 is formed between a ceramic layer 116 and a copper layer 112, and a joining layer 118 is formed between the ceramic layer 116 and a copper layer 120. Figure 10 shows a patterned copper layer 112' after an exemplary selective wet etch process is performed. The slopes 122 of the etched copper walls are exaggerated to indicate the effects of the wet etch process. Figure 11 shows a patterned
joining layer 114' after a physical etch process is performed on the portions of the joining layer 114 exposed after the wet etch process. The patterned copper layer 112' and the patterned joining layer 114' form electrically isolated pads 130. The number and dimensions of the pads 130 shown in Figure 11 is for exemplary purposes only. The slopes 124 of the etched joining layer walls are steeper than the slopes 122 of the etched copper walls. The different slopes are an artifact of the two different etch processes. Figure 12 illustrates a magnified portion of the etched surfaces between two adjacent pads 130 to better illustrate the difference in the slope 122 of the etched copper wall and the slope 124 of the etched joining layer wall. The slopes 122 and 124 shown in Figures 9-12 are for exemplary purposes only.
Figure 13 illustrates the two step etching process applied to the exemplary ceramic assembly 110 of Figure 9. Figure 13 shows a patterned copper layer 112" and a patterned joining layer 114" after an exemplary selective physical etch process is simultaneously performed on both layers. The patterned copper layer 112" and the patterned joining layer 114" form electrically isolated pads 130'. The number and dimensions of the pads 130' shown in Figure 13 is for exemplary purposes only. The slopes 122' of the etched copper walls and the slopes 124' of the etched joining layer walls are the same as both are formed using the single step physical etch process.
A second approach for patterning both the copper layer and the joining layer uses patterned screen printings to selectively apply the intermediate joining material on each side of the ceramic layer. Figures 14-17 illustrate the second approach for patterning both the copper layer and the joining layer while fabricating an exemplary ceramic assembly 160. In Figure 14, a screen printed pattern of intermediate joining material 164 is applied to a first surface of a ceramic plate 166, and a screen printed pattern of intermediate joining material 168 is applied to a second surface of the ceramic plate 166. The intermediate joining material 164 and 168 is either an ink or paste to enable the screen printing application. In some embodiments, the thickness of the intermediate joining material is between several microns to 100s of microns. In still other embodiments, the thickness of the intermediate joining material is about 25 microns. In alternative configurations, the intermediate joining layer 168 is not patterned, similarly to the ceramic assembly 110 in Figures 9-13. In general, a ceramic assembly can be patterned on one or both sides depending on the application. In Figure 15, a copper sheet 162 is positioned against the patterned intermediate joining material 164, and a copper sheet 170 is positioned against the patterned intermediate joining material 168. The assembly is then brazed. The brazing temperature is determined by the type of intermediate joining material used, such as described in Table 1.
In Figure 16, a photoresist layer 172 is applied and patterned on the copper sheet 162, and a photoresist layer 174 is applied and patterned on the copper sheet 170. The photoresist layer 172 is patterned to match the patterned joining material 164, and the photoresist layer 174 is patterned to match the patterned joining material 168. In Figure 17, the copper sheets 162 and 170 are selectively etched. In some embodiments, the copper sheets are etched using a wet etch process. The photoresist layers 172 and 174 are then removed. The result is a plurality of electrically isolated conductive pads 180. The number and dimensions of the pads 180 shown in Figure 17 is for exemplary purposes only. Using either the first approach, shown in Figures 9-13, or the second approach, shown in Figures 14- 17, electrical isolation of the conductive pads can be verified by measuring resistivity between the pads. The final step in fabricating the ceramic assembly is laser machining of the assembly to provide drilled alignment holes and final shaping of the assembly.
B. Fabrication of the Microheat Exchanger
The microheat exchanger is made of a thermally conductive material. In some embodiments, the microheat exchanger is made of copper. The microheat exchanger includes fluid pathways that enable fluid flow through the microheat exchanger. Heat is transferred from the thermally conductive material to fluid flowing through the microheat exchanger. The microheat exchanger includes one or more fluid input ports and one or more fluid output ports to enable fluid flow into and out of the microheat exchanger. In some embodiments, fluid pathways within the microheat exchanger are formed from cross hatched patterned fin design to provide flow uniformity either across the entire microheat exchanger or to select portions of the microheat exchanger. When the microheat exchanger is coupled to the ceramic assembly, the fluid pathways are designed to provide flow uniformity over the length of each heat generating device coupled to the conductive pads on the ceramic assembly. In some embodiments, the patterned fins are brazed to the microheat exchanger body using a CuSiI sheet. In some embodiments, the thickness of the CuSiI sheet is in the range of about 10 micrometer to about 100 micrometers. In still other embodiments, the thickness of the CuSiI sheet is about 25 microns. It is understood that any conventional microheat exchanger that includes fluid flow therethrough can be used.
C. Fabrication of the Microheat Exchanging Assembly
Final assembly involves placing and aligning a first ceramic assembly, the microheat exchanger, and a second ceramic assembly in a fixture and brazing the fixed assembly in a vacuum or forming gas furnace. In some embodiments, only a single ceramic assembly is brazed to the microheat exchanger. A joining material is used to braze each ceramic assembly to the microheat exchanger. Where the microheat exchanger is made of copper and the bottom conducting layer of the ceramic assembly is also a copper layer, the joining material is a copper-to-copper joining material. In some embodiments, the joining material is a CuSiI paste or CuSiI foil. In an exemplary application, an eutectic CuSiI joining material is made of 72% silver and 28% copper, having a melting temperature of 1435 degrees
Fahrenheit. Using this CuSiI joining material, a brazing temperature is about 1420 degrees Fahrenheit. Using a brazing process the joining material "flows" into the micro voids on the contact surfaces. Also, the brazing temperature and pressure for bonding the ceramic assembly to the microheat exchanger is lower than the brazing temperature and pressure used to fabricate the ceramic assembly. As such, using two separate fabrication steps, one to fabricate the ceramic assembly and another to fabricate the microheat exchanging assembly, does not put the microheat exchanger under as high a temperature or pressure, which reduces the chance of deformation. In other embodiments, the joining material is a solder paste or a solder foil. In general, any conventional metal-to-metal joining material can be used. In some embodiments, the thickness of the joining material is in the range of about 10 micrometer to about 100 micrometers. In still other embodiments, the thickness of the joining material is about 25 microns. In an alternative approach, instead of applying a separate joining material, the microheat exchanger body is plated with silver which forms CuSiI during brazing. In some embodiments, the silver plating thickness is between about 1 micron and about 100 microns. In still other embodiments, the thickness of the silver plating is about 10 microns.
Figure 18 illustrates an exemplary process for fabricating a microheat exchanging assembly according to an embodiment. At the step 190, a first ceramic assembly and a joining material are assembled on a first surface of a microheat exchanger. At the step 192, a second ceramic assembly and a joining material are assembled on a second surface of the microheat exchanger. The joining material can be either paste or a foil. In some embodiments, one or more surfaces of the first ceramic assembly are patterned. In other embodiments, one or more surfaces of both the first ceramic assembly and the second ceramic assembly are patterned. In still other embodiments, the step 192 is not performed and only a single ceramic assembly and joining material are assembled to the microheat
exchanger. At the step 194, the first ceramic assembly, the joining material, the microheat exchanger, the joining material, and the second ceramic assembly are brazed, thereby forming the microheat exchanging assembly.
Figure 19 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly 210 with the ceramic assemblies fabricated using the bare ceramic approach. The microheat exchanging assembly 210 includes a patterned ceramic assembly bonded to a first surface of a microheat exchanger 224, and a ceramic assembly bonded to a second surface of the microheat exchanger 224. The patterned ceramic assembly includes a patterned copper layer 212, a patterned ABA joining layer 214, a ceramic plate 216, an ABA j oining layer 218, and a copper layer 220. The copper layer 212 and the j oining layer 214 are patterned to form electrically isolated conductive pads 238. The copper layer 220 is bonded to the microheat exchanger 224 via joining layer 222. The ceramic assembly includes a copper layer 228, an ABA joining layer 230, a ceramic plate 232, an ABA joining layer 234, and a copper layer 236. The copper layer 228 is bonded to the microheat exchanger 224 via joining layer 226. Although only the copper layer 212 and the joining layer 214 are shown to be patterned in Figure 19, it is understood that the copper layer 220 and the joining layer 218, the copper layer 228 and the joining layer 230, and/or the copper layer 236 and the joining layer 234 can be patterned according to the application.
As describe above in the bare ceramic approach of fabricating the ceramic assembly, the ABA joining material can be applied as a foil or a paste. In some embodiments, the ABA joining material is Cu-ABA, CuSiI-ABA, or InCuSiI-ABA. In some embodiments, the joining material used for the joining layers 222 and 226 is a CuSiI paste or a CuSiI foil. In other embodiments, the joining material is a solder paste or a solder foil. In general, any conventional metal-to-metal joining material can be used. Figure 20 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly 310 with the ceramic assemblies fabricated using the brazed copper option of the metallized ceramic approach. The microheat exchanging assembly 310 includes a patterned ceramic assembly bonded to a first surface of a microheat exchanger 328, and a ceramic assembly bonded to a second surface of the microheat exchanger 328. The patterned ceramic assembly includes a patterned copper layer 312, a patterned joining layer 314, ametallized layer 316, a ceramic plate 318, a metallized layer 320, a joining layer 322, and a copper layer 324. The copper layer 312, the joining layer 314, and the metallized layer 316 are patterned to form electrically isolated conductive pads 346. The copper layer 324 is bonded to the microheat exchanger 328 via joining layer 326. The ceramic assembly includes a copper layer 332, a joining layer 334, a metallized layer 336, a ceramic plate 338,
a metallized layer 340, ajoining layer 342, and a copper layer 344. The copper layer 332 is bonded to the microheat exchanger 328 via joining layer 330. Although only the copper layer 312, the joining layer 314, and the metallized layer 316 are shown to be patterned in Figure 20, it is understood that the copper layer 324, the joining layer 322, and the metallized layer 320, the copper layer 332, the joining layer 334, and the metallized layer 336, and/or the copper layer 344, the joining layer 342, and the metallized layer 340 can be patterned according to the application.
As describe above in the brazed copper option of the metallized ceramic approach for fabricating the ceramic assembly, the metallized layer includes refractory materials, such as molybdenum manganese (MoMn), titanium (Ti), or tungsten (W), plated with nickel. The joining material used to form the joining layers 314, 322, 334, and 342 can be applied as a foil or a paste. In some embodiments, the joining material is a CuSiI or CuAu paste or a CuSiI or CuAu foil. In other embodiments, the joining material and copper layer are combined as a silver plated copper sheet. In some embodiments, the joining material used for the joining layers 326 and 330 is a CuSiI paste or a CuSiI foil. In other embodiments, the joining material is a solder paste or a solder foil. In general, any conventional metal-to-metal joining material can be used for the joining layers 326 and 330.
Figure 21 illustrates a cut-out side view of exemplary layers of a completed microheat exchanging assembly 410 with the ceramic assemblies fabricated using the plated copper option of the metallized ceramic approach. The microheat exchanging assembly 410 includes a patterned ceramic assembly bonded to a first surface of a microheat exchanger 424, and a ceramic assembly bonded to a second surface of the microheat exchanger 424. The patterned ceramic assembly includes a patterned copper layer 412, a patterned metallized layer 414, a ceramic plate 416, a metallized layer 418, and a copper layer 420. The copper layer 412 and the metallized layer 414 are patterned to form electrically isolated conductive pads 438. The copper layer 420 is bonded to the microheat exchanger 424 viajoining layer 422. The ceramic assembly includes a copper layer 428, a metallized layer 430, a ceramic plate 432, a metallized layer 434, and a copper layer 436. The copper layer 428 is bonded to the microheat exchanger 424 viajoining layer 426. Although only the copper layer 412 and the metallized layer 414 are shown to be patterned in Figure 21, it is understood that the copper layer 420 and the metallized layer 418, the copper layer 428 and the metallized layer 430, and/or the copper layer 436 and the metallized layer 434 can be patterned according to the application.
As describe above in the plated copper option of the metallized ceramic approach for fabricating the ceramic assembly, the metallized layer includes refractory materials, such as
molybdenum manganese (MoMn), titanium (Ti), or tungsten (W), plated with nickel. The joining material can be applied as a foil or a paste. In some embodiments, the joining material is a CuSiI or CuAu paste or a CuSiI or a CuAu foil. In other embodiments, the joining material is a solder paste or a solder foil. In general, any conventional metal-to-metal joining material can be used for the joining layers 422 and 426.
The microheat exchanging assemblies are described above as bonding an outer surface of the ceramic assembly to an outer surface of the microheat exchanger via a joining material. In alternative embodiments, an intermediate layer, layers stack, block, or device, such as an additional microheat exchanger, can be positioned between the ceramic assembly and the microheat exchanger, where the intermediate layer, layers stack, block, or device is thermally conductive and includes outer surfaces conducive for bonding with the outer surface of the ceramic assembly and the outer surface of the microheat exchanger as described above.
The ceramic assembly has been described in terms of specific embodiments incorporating details to facilitate the understanding of the principles of construction and operation of the bonded plate. Such reference herein to specific embodiments and details thereof is not intended to limit the scope of the claims appended hereto. It will be apparent to those skilled in the art that modifications may be made in the embodiment chosen for illustration without departing from the spirit and scope of the bonded plate.
Claims
1. A device comprising: a. a first copper layer; b. a ceramic layer; c. a second copper layer; d. a first active brazing alloy bonded between the first copper layer and the ceramic layer to form a first joining layer; and e. a second active brazing alloy bonded between the ceramic layer and the second copper layer to form a second joining layer.
2. The device of claim 1 wherein the ceramic layer comprises beryllium oxide, aluminum oxide, or aluminum nitride.
3. The device of claim 1 wherein the first active brazing alloy layer and the second active brazing alloy layer comprise a copper-based active brazing alloy, a copper- silver-based active brazing alloy, or an indium-copper-silver-based active brazing alloy.
4. The device of claim 1 wherein the first active brazing alloy layer is comprised of an active joining material paste and the second active brazing alloy layer is comprised of the active joining material paste bonded, or the first active brazing alloy layer is comprised of an active joining material foil and the second active brazing alloy layer is comprised of the active joining material foil.
5. A device comprising: a. a first copper layer; b. a ceramic layer; c. a second copper layer; d. a first active brazing alloy layer bonded between the first copper layer and the ceramic layer to form a first joining layer, wherein the first copper layer and the first joining layer are configured to form a plurality of electrically isolated conductive pads; and e. a second active brazing alloy layer bonded between the ceramic layer and the second copper layer to form a second joining layer.
6. The device of claim 5 wherein the first copper layer and the first joining layer are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer.
7. The device of claim 5 wherein each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the first joining layer to a first surface of the ceramic layer, the first surface of the first copper layer is distal from the first joining layer, and the first surface of the ceramic layer is proximate to the first joining layer, further wherein a slope of the etched wall is uniform through the first copper layer and the first joining layer.
8. The device of claim 5 wherein each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the first joining layer to a first surface of the ceramic layer, the first surface of the first copper layer is distal from the first joining layer, and the first surface of the ceramic layer is proximate to the first joining layer, further wherein a slope of the etched wall through the first joining layer is steeper than a slope of the etched wall through the first copper layer.
9. The device of claim 5 wherein the ceramic layer comprises beryllium oxide, aluminum oxide, or aluminum nitride.
10. The device of claim 5 wherein the first active brazing alloy layer and the second active brazing alloy layer comprise a copper-based active brazing alloy, a copper- silver-based active brazing alloy, or an indium-copper-silver-based active brazing alloy.
11. The device of claim 5 wherein the first active brazing alloy layer is comprised of an active joining material paste and the second active brazing alloy layer is comprised of the active joining material paste, or the first active brazing alloy layer is comprised of an active joining material foil and the second active brazing alloy layer is comprised of the active joining material foil.
12. A device comprising: a. a first copper layer; b. a ceramic layer including a metallized first surface and a metallized second surface; c. a second copper layer; d. a first copper and ceramic joining layer bonded between the first copper layer and the metallized first surface of the ceramic layer to form a first joining layer, wherein the first copper layer, the first joining layer, and the metallized first surface are configured to form a plurality of electrically isolated conductive pads; and e. a second copper and ceramic joining layer bonded between the metallized second surface of the ceramic layer and the second copper layer to form a second joining layer.
13. The device of claim 12 wherein the first copper layer, the first joining layer, and the metallized first surface are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer.
14. The device of claim 12 wherein each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer, the first joining layer, and the metalized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall is uniform through the first copper layer, the first joining layer, and the metalized first surface.
15. The device of claim 12 wherein each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer, the first joining layer, and the metalized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall through the first joining layer is steeper than a slope of the etched wall through the first copper layer.
16. The device of claim 12 wherein the metallized first surface comprises molybdenum manganese and nickel.
17. The device of claim 12 wherein the ceramic layer comprises beryllium oxide, aluminum oxide, or aluminum nitride.
18. The device of claim 12 wherein the first copper and ceramic joining layer and the second copper and ceramic joining layer comprise a copper-silver paste, a copper- silver foil, a copper-gold paste, or a copper-gold foil.
19. The device of claim 12 wherein the first copper and ceramic joining layer and the first copper layer comprise a first silver plated copper sheet, and the second copper and ceramic joining layer and the second copper layer comprise a second silver plated copper sheet.
20. A device comprising: a. a ceramic layer including a metallized first surface and a metallized second surface; b. a first copper layer plated to the metallized first surface, wherein the first plated copper layer and the metallized first surface are configured to form a plurality of electrically isolated conductive pads; and c. a second copper layer plated to the metallized second surface.
21. The device of claim 22 wherein the first copper layer and the metallized first surface are etched to form a plurality of electrically isolated conductive pads, further wherein each of the plurality of electrically isolated pads are electrically isolated from each other and from the second copper layer by the ceramic layer.
22. The device of claim 22 wherein each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the metalized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall is uniform through the first copper layer and the metalized first surface.
23. The device of claim 22 wherein each of the plurality of electrically isolated pads includes an etched wall extending from a first surface of the first copper layer through the first copper layer and the metalized first surface, to a first surface of the ceramic layer, further wherein a slope of the etched wall through the metallized first surface is steeper than a slope of the etched wall through the first copper layer.
24. The device of claim 22 wherein the metallized first surface comprises molybdenum manganese and nickel.
25. The device of claim 2 wherein the ceramic layer comprises beryllium oxide, aluminum oxide, or aluminum nitride.
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Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8464781B2 (en) | 2002-11-01 | 2013-06-18 | Cooligy Inc. | Cooling systems incorporating heat exchangers and thermoelectric layers |
US20040112571A1 (en) * | 2002-11-01 | 2004-06-17 | Cooligy, Inc. | Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device |
US7591302B1 (en) | 2003-07-23 | 2009-09-22 | Cooligy Inc. | Pump and fan control concepts in a cooling system |
CN101449374B (en) * | 2006-06-08 | 2011-11-09 | 国际商业机器公司 | Highly heat conductive, flexible sheet and its manufacture method |
US9297571B1 (en) | 2008-03-10 | 2016-03-29 | Liebert Corporation | Device and methodology for the removal of heat from an equipment rack by means of heat exchangers mounted to a door |
US8254422B2 (en) * | 2008-08-05 | 2012-08-28 | Cooligy Inc. | Microheat exchanger for laser diode cooling |
DE102009000514A1 (en) * | 2009-01-30 | 2010-08-26 | Robert Bosch Gmbh | Composite component and method for producing a composite component |
DE102010002252A1 (en) * | 2010-02-23 | 2011-08-25 | JENOPTIK Laser GmbH, 07745 | Method for applying soft solder to a mounting surface of a component |
EP2492444A1 (en) * | 2011-02-22 | 2012-08-29 | General Electric Company | Plating of ceramic matrix composite parts as metal-ceramic joining method in gas turbine hardware |
US8958448B2 (en) | 2013-02-04 | 2015-02-17 | Microsoft Corporation | Thermal management in laser diode device |
US9456201B2 (en) | 2014-02-10 | 2016-09-27 | Microsoft Technology Licensing, Llc | VCSEL array for a depth camera |
US9577406B2 (en) | 2014-06-27 | 2017-02-21 | Microsoft Technology Licensing, Llc | Edge-emitting laser diode package comprising heat spreader |
US10175005B2 (en) * | 2015-03-30 | 2019-01-08 | Infinera Corporation | Low-cost nano-heat pipe |
DE102015108668B4 (en) * | 2015-06-02 | 2018-07-26 | Rogers Germany Gmbh | Method for producing a composite material |
US9941658B2 (en) | 2016-05-24 | 2018-04-10 | Coherent, Inc. | Stackable electrically-isolated diode-laser bar assembly |
JP6964654B2 (en) * | 2016-08-05 | 2021-11-10 | テラダイオード, インコーポレーテッド | High power laser system with modular diode source |
WO2018130798A1 (en) | 2017-01-12 | 2018-07-19 | Dyson Technology Limited | A hand held appliance |
GB2562276B (en) * | 2017-05-10 | 2021-04-28 | Dyson Technology Ltd | A heater |
JP6939596B2 (en) * | 2018-01-24 | 2021-09-22 | 三菱マテリアル株式会社 | Manufacturing method of substrate for power module and ceramics-copper joint |
DE102018113412A1 (en) * | 2018-06-06 | 2019-12-12 | Netzsch - Gerätebau Gesellschaft mit beschränkter Haftung | Measuring arrangement and method for a thermal analysis of a sample |
DE102019135171A1 (en) * | 2019-12-19 | 2021-06-24 | Rogers Germany Gmbh | Solder material, method for producing such a solder material and use of such a solder material for connecting a metal layer to a ceramic layer |
DE102020111698A1 (en) * | 2020-04-29 | 2021-11-04 | Rogers Germany Gmbh | Method for producing a metal-ceramic substrate and a metal-ceramic substrate produced by such a method |
CN111933610B (en) * | 2020-07-17 | 2022-03-29 | 江苏富乐华半导体科技股份有限公司 | Metal ceramic substrate with buffer layer and preparation method thereof |
CN114497292B (en) * | 2021-12-24 | 2023-05-09 | 华灿光电(浙江)有限公司 | Tricolor light-emitting diode chip and preparation method thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4409079A (en) * | 1981-06-24 | 1983-10-11 | Hitachi, Ltd. | Method of metallizing sintered ceramics |
US4497875A (en) * | 1982-02-10 | 1985-02-05 | Hitachi, Ltd. | Ceramic substrate with metal plate |
US5757070A (en) * | 1995-10-24 | 1998-05-26 | Altera Corporation | Integrated circuit package |
US5896869A (en) * | 1997-01-13 | 1999-04-27 | International Business Machines Corporation | Semiconductor package having etched-back silver-copper braze |
US20070152352A1 (en) * | 2003-01-29 | 2007-07-05 | Mckinnell James C | Micro-fabricated device with thermoelectric device and method of making |
US20080110963A1 (en) * | 2006-04-26 | 2008-05-15 | Watlow Electric Manufacturing Company | Methods of securing a thermocouple to a ceramic substrate |
Family Cites Families (377)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2273505A (en) | 1942-02-17 | Container | ||
US596062A (en) | 1897-12-28 | Device for preventing bursting of freezing pipes | ||
US444171A (en) * | 1891-01-06 | Grift | ||
US2087521A (en) | 1934-10-29 | 1937-07-20 | Mazzola Antonino | Hair curling device |
US2039593A (en) | 1935-06-20 | 1936-05-05 | Theodore N Hubbuch | Heat transfer coil |
US2956642A (en) | 1958-12-23 | 1960-10-18 | Gen Motors Corp | Camshaft and bearing lubricating means |
US3220254A (en) | 1963-08-30 | 1965-11-30 | Marquardt Corp | Two-phase fluid flowmeter |
NL6514626A (en) | 1965-11-11 | 1967-05-12 | ||
US3361195A (en) | 1966-09-23 | 1968-01-02 | Westinghouse Electric Corp | Heat sink member for a semiconductor device |
US3514967A (en) | 1968-06-20 | 1970-06-02 | Whirlpool Co | Air conditioner control |
US3771219A (en) | 1970-02-05 | 1973-11-13 | Sharp Kk | Method for manufacturing semiconductor device |
US3654988A (en) * | 1970-02-24 | 1972-04-11 | American Standard Inc | Freeze protection for outdoor cooler |
DE2102254B2 (en) | 1971-01-19 | 1973-05-30 | Robert Bosch Gmbh, 7000 Stuttgart | COOLING DEVICE FOR POWER SEMICONDUCTOR COMPONENTS |
FR2216537B1 (en) * | 1973-02-06 | 1975-03-07 | Gaz De France | |
US3852806A (en) | 1973-05-02 | 1974-12-03 | Gen Electric | Nonwicked heat-pipe cooled power semiconductor device assembly having enhanced evaporated surface heat pipes |
US3823572A (en) | 1973-08-15 | 1974-07-16 | American Air Filter Co | Freeze protection device in heat pump system |
US3917375A (en) | 1974-06-17 | 1975-11-04 | Teradyne Inc | Electrical connection apparatus |
US3929154A (en) | 1974-07-29 | 1975-12-30 | Frank E Goodwin | Freeze protection apparatus |
US3946276A (en) | 1974-10-09 | 1976-03-23 | Burroughs Corporation | Island assembly employing cooling means for high density integrated circuit packaging |
US4072188A (en) | 1975-07-02 | 1978-02-07 | Honeywell Information Systems Inc. | Fluid cooling systems for electronic systems |
US4021867A (en) * | 1975-09-08 | 1977-05-10 | Maxwell Jr Oscar Benton | Convertible cradle |
US3993123A (en) | 1975-10-28 | 1976-11-23 | International Business Machines Corporation | Gas encapsulated cooling module |
US4037889A (en) | 1976-06-14 | 1977-07-26 | Piatt James A | Journal bearing |
DE2658720C3 (en) | 1976-12-24 | 1982-01-28 | Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn | Latent heat storage for holding a heat-storing medium |
US4138996A (en) * | 1977-07-28 | 1979-02-13 | Rheem Manufacturing Company | Solar heater freeze protection system |
US4312012A (en) | 1977-11-25 | 1982-01-19 | International Business Machines Corp. | Nucleate boiling surface for increasing the heat transfer from a silicon device to a liquid coolant |
US4203488A (en) | 1978-03-01 | 1980-05-20 | Aavid Engineering, Inc. | Self-fastened heat sinks |
US4194559A (en) * | 1978-11-01 | 1980-03-25 | Thermacore, Inc. | Freeze accommodating heat pipe |
US4262975A (en) | 1979-10-01 | 1981-04-21 | Mechanical Technology Incorporated | Compliant journal bearing with angular stiffness gradient |
US4235285A (en) | 1979-10-29 | 1980-11-25 | Aavid Engineering, Inc. | Self-fastened heat sinks |
US4332291A (en) | 1979-12-21 | 1982-06-01 | D. Mulock-Bentley And Associates (Proprietary) Limited | Heat exchanger with slotted fin strips |
US4248295A (en) * | 1980-01-17 | 1981-02-03 | Thermacore, Inc. | Freezable heat pipe |
US4345267A (en) | 1980-03-31 | 1982-08-17 | Amp Incorporated | Active device substrate connector having a heat sink |
JPS5948168B2 (en) | 1980-04-10 | 1984-11-24 | 株式会社ボッシュオートモーティブ システム | Control method for vehicle air conditioner |
US4573067A (en) * | 1981-03-02 | 1986-02-25 | The Board Of Trustees Of The Leland Stanford Junior University | Method and means for improved heat removal in compact semiconductor integrated circuits |
US4450472A (en) | 1981-03-02 | 1984-05-22 | The Board Of Trustees Of The Leland Stanford Junior University | Method and means for improved heat removal in compact semiconductor integrated circuits and similar devices utilizing coolant chambers and microscopic channels |
US4574876A (en) * | 1981-05-11 | 1986-03-11 | Extracorporeal Medical Specialties, Inc. | Container with tapered walls for heating or cooling fluids |
DE3123990C2 (en) | 1981-06-19 | 1986-04-10 | M.A.N.- Roland Druckmaschinen AG, 6050 Offenbach | Adjustment device for inking and dampening rollers on printing machines |
JPS57212508A (en) * | 1981-06-25 | 1982-12-27 | Mitsubishi Electric Corp | Programming device with cathode ray tube |
CH658511A5 (en) | 1982-04-21 | 1986-11-14 | Ernst H Furrer Fa | COOLING UNIT FOR A CLOSED DEVICE, IN PARTICULAR FOR A CONTROL CABINET. |
US4485429A (en) | 1982-06-09 | 1984-11-27 | Sperry Corporation | Apparatus for cooling integrated circuit chips |
US4494171A (en) | 1982-08-24 | 1985-01-15 | Sundstrand Corporation | Impingement cooling apparatus for heat liberating device |
US4516632A (en) | 1982-08-31 | 1985-05-14 | The United States Of America As Represented By The United States Deparment Of Energy | Microchannel crossflow fluid heat exchanger and method for its fabrication |
US4467861A (en) | 1982-10-04 | 1984-08-28 | Otdel Fiziko-Tekhnicheskikh Problem Energetiki Uralskogo Nauchnogo Tsentra Akademii Nauk Sssr | Heat-transporting device |
GB8323065D0 (en) | 1983-08-26 | 1983-09-28 | Rca Corp | Flux free photo-detector soldering |
JPS6057956A (en) | 1983-09-09 | 1985-04-03 | Furukawa Electric Co Ltd:The | Heat pipe type dissipator for semiconductor |
US4567505A (en) * | 1983-10-27 | 1986-01-28 | The Board Of Trustees Of The Leland Stanford Junior University | Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like |
JPH0673364B2 (en) | 1983-10-28 | 1994-09-14 | 株式会社日立製作所 | Integrated circuit chip cooler |
US4664181A (en) | 1984-03-05 | 1987-05-12 | Thermo Electron Corporation | Protection of heat pipes from freeze damage |
US4561040A (en) | 1984-07-12 | 1985-12-24 | Ibm Corporation | Cooling system for VLSI circuit chips |
US4893174A (en) | 1985-07-08 | 1990-01-09 | Hitachi, Ltd. | High density integration of semiconductor circuit |
US4693307A (en) | 1985-09-16 | 1987-09-15 | General Motors Corporation | Tube and fin heat exchanger with hybrid heat transfer fin arrangement |
US4687167A (en) | 1985-10-23 | 1987-08-18 | Skalka Gerald P | Multi-position computer support |
EP0231456B1 (en) | 1985-12-13 | 1991-06-26 | Ascom Hasler AG | Process and device for the transfer of waste heat by at least one element of an electrical assembly |
US4758926A (en) | 1986-03-31 | 1988-07-19 | Microelectronics And Computer Technology Corporation | Fluid-cooled integrated circuit package |
US4716494A (en) | 1986-11-07 | 1987-12-29 | Amp Incorporated | Retention system for removable heat sink |
US4868712A (en) | 1987-02-04 | 1989-09-19 | Woodman John K | Three dimensional integrated circuit package |
US5016138A (en) | 1987-10-27 | 1991-05-14 | Woodman John K | Three dimensional integrated circuit package |
US4894709A (en) * | 1988-03-09 | 1990-01-16 | Massachusetts Institute Of Technology | Forced-convection, liquid-cooled, microchannel heat sinks |
US4896719A (en) | 1988-05-11 | 1990-01-30 | Mcdonnell Douglas Corporation | Isothermal panel and plenum |
US4908112A (en) * | 1988-06-16 | 1990-03-13 | E. I. Du Pont De Nemours & Co. | Silicon semiconductor wafer for analyzing micronic biological samples |
US4866570A (en) | 1988-08-05 | 1989-09-12 | Ncr Corporation | Apparatus and method for cooling an electronic device |
US4938280A (en) | 1988-11-07 | 1990-07-03 | Clark William E | Liquid-cooled, flat plate heat exchanger |
CA2002213C (en) | 1988-11-10 | 1999-03-30 | Iwona Turlik | High performance integrated circuit chip package and method of making same |
US5058627A (en) | 1989-04-10 | 1991-10-22 | Brannen Wiley W | Freeze protection system for water pipes |
US5145001A (en) | 1989-07-24 | 1992-09-08 | Creare Inc. | High heat flux compact heat exchanger having a permeable heat transfer element |
US5009760A (en) | 1989-07-28 | 1991-04-23 | Board Of Trustees Of The Leland Stanford Junior University | System for measuring electrokinetic properties and for characterizing electrokinetic separations by monitoring current in electrophoresis |
DE3927755C2 (en) | 1989-08-23 | 1997-09-11 | Sel Alcatel Ag | Heat dissipation device for electrical components |
JP2704009B2 (en) | 1989-10-19 | 1998-01-26 | マツダ株式会社 | Automotive air conditioning controller |
US4978638A (en) | 1989-12-21 | 1990-12-18 | International Business Machines Corporation | Method for attaching heat sink to plastic packaged electronic component |
US5016707A (en) | 1989-12-28 | 1991-05-21 | Sundstrand Corporation | Multi-pass crossflow jet impingement heat exchanger |
US5083194A (en) * | 1990-01-16 | 1992-01-21 | Cray Research, Inc. | Air jet impingement on miniature pin-fin heat sinks for cooling electronic components |
US6054034A (en) * | 1990-02-28 | 2000-04-25 | Aclara Biosciences, Inc. | Acrylic microchannels and their use in electrophoretic applications |
US6176962B1 (en) * | 1990-02-28 | 2001-01-23 | Aclara Biosciences, Inc. | Methods for fabricating enclosed microchannel structures |
US5858188A (en) * | 1990-02-28 | 1999-01-12 | Aclara Biosciences, Inc. | Acrylic microchannels and their use in electrophoretic applications |
US5070040A (en) | 1990-03-09 | 1991-12-03 | University Of Colorado Foundation, Inc. | Method and apparatus for semiconductor circuit chip cooling |
US5016090A (en) | 1990-03-21 | 1991-05-14 | International Business Machines Corporation | Cross-hatch flow distribution and applications thereof |
US5043797A (en) | 1990-04-03 | 1991-08-27 | General Electric Company | Cooling header connection for a thyristor stack |
WO1991016805A1 (en) * | 1990-04-16 | 1991-10-31 | Denki Kagaku Kogyo Kabushiki Kaisha | Ceramic circuit board |
JPH07114250B2 (en) | 1990-04-27 | 1995-12-06 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Heat transfer system |
US5265670A (en) | 1990-04-27 | 1993-11-30 | International Business Machines Corporation | Convection transfer system |
US5088005A (en) * | 1990-05-08 | 1992-02-11 | Sundstrand Corporation | Cold plate for cooling electronics |
US5161089A (en) | 1990-06-04 | 1992-11-03 | International Business Machines Corporation | Enhanced multichip module cooling with thermally optimized pistons and closely coupled convective cooling channels, and methods of manufacturing the same |
US5203401A (en) * | 1990-06-29 | 1993-04-20 | Digital Equipment Corporation | Wet micro-channel wafer chuck and cooling method |
US5057908A (en) | 1990-07-10 | 1991-10-15 | Iowa State University Research Foundation, Inc. | High power semiconductor device with integral heat sink |
US5036676A (en) | 1990-09-21 | 1991-08-06 | Carrier Corporation | Method of compressor current control for variable speed heat pumps |
US5420067A (en) | 1990-09-28 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricatring sub-half-micron trenches and holes |
US5099910A (en) | 1991-01-15 | 1992-03-31 | Massachusetts Institute Of Technology | Microchannel heat sink with alternating flow directions |
US5099311A (en) | 1991-01-17 | 1992-03-24 | The United States Of America As Represented By The United States Department Of Energy | Microchannel heat sink assembly |
JPH06342990A (en) | 1991-02-04 | 1994-12-13 | Internatl Business Mach Corp <Ibm> | Integrated cooling system |
US5131233A (en) | 1991-03-08 | 1992-07-21 | Cray Computer Corporation | Gas-liquid forced turbulence cooling |
US5125451A (en) | 1991-04-02 | 1992-06-30 | Microunity Systems Engineering, Inc. | Heat exchanger for solid-state electronic devices |
US5263251A (en) | 1991-04-02 | 1993-11-23 | Microunity Systems Engineering | Method of fabricating a heat exchanger for solid-state electronic devices |
US5232047A (en) | 1991-04-02 | 1993-08-03 | Microunity Systems Engineering, Inc. | Heat exchanger for solid-state electronic devices |
US5105430A (en) | 1991-04-09 | 1992-04-14 | The United States Of America As Represented By The United States Department Of Energy | Thin planar package for cooling an array of edge-emitting laser diodes |
US5199487A (en) | 1991-05-31 | 1993-04-06 | Hughes Aircraft Company | Electroformed high efficiency heat exchanger and method for making |
EP0520173A2 (en) | 1991-06-21 | 1992-12-30 | Tandon Corporation | Computer housing |
US5239200A (en) | 1991-08-21 | 1993-08-24 | International Business Machines Corporation | Apparatus for cooling integrated circuit chips |
US5228502A (en) | 1991-09-04 | 1993-07-20 | International Business Machines Corporation | Cooling by use of multiple parallel convective surfaces |
US5386143A (en) | 1991-10-25 | 1995-01-31 | Digital Equipment Corporation | High performance substrate, electronic package and integrated circuit cooling process |
JPH05217121A (en) | 1991-11-22 | 1993-08-27 | Internatl Business Mach Corp <Ibm> | Method and apparatus for coupling of thermo- sensitive element such as chip provided with magnetic converter, etc. |
US5142970A (en) | 1992-02-24 | 1992-09-01 | Erkenbrack Kenneth B | Apparatus for storing matter out of contact with gas |
US5218515A (en) | 1992-03-13 | 1993-06-08 | The United States Of America As Represented By The United States Department Of Energy | Microchannel cooling of face down bonded chips |
US5239443A (en) | 1992-04-23 | 1993-08-24 | International Business Machines Corporation | Blind hole cold plate cooling system |
US5317805A (en) | 1992-04-28 | 1994-06-07 | Minnesota Mining And Manufacturing Company | Method of making microchanneled heat exchangers utilizing sacrificial cores |
US5294834A (en) | 1992-06-01 | 1994-03-15 | Sverdrup Technology, Inc. | Low resistance contacts for shallow junction semiconductors |
US5275237A (en) | 1992-06-12 | 1994-01-04 | Micron Technology, Inc. | Liquid filled hot plate for precise temperature control |
US5308429A (en) | 1992-09-29 | 1994-05-03 | Digital Equipment Corporation | System for bonding a heatsink to a semiconductor chip package |
DE4240082C1 (en) | 1992-11-28 | 1994-04-21 | Erno Raumfahrttechnik Gmbh | Heat pipe |
US5316077A (en) | 1992-12-09 | 1994-05-31 | Eaton Corporation | Heat sink for electrical circuit components |
US5520244A (en) | 1992-12-16 | 1996-05-28 | Sdl, Inc. | Micropost waste heat removal system |
US5269372A (en) | 1992-12-21 | 1993-12-14 | International Business Machines Corporation | Intersecting flow network for a cold plate cooling system |
US5397919A (en) * | 1993-03-04 | 1995-03-14 | Square Head, Inc. | Heat sink assembly for solid state devices |
US5299635A (en) | 1993-03-05 | 1994-04-05 | Wynn's Climate Systems, Inc. | Parallel flow condenser baffle |
WO1994021372A1 (en) | 1993-03-19 | 1994-09-29 | E.I. Du Pont De Nemours And Company | Integrated chemical processing apparatus and processes for the preparation thereof |
JP3477781B2 (en) | 1993-03-23 | 2003-12-10 | セイコーエプソン株式会社 | IC card |
US5459352A (en) | 1993-03-31 | 1995-10-17 | Unisys Corporation | Integrated circuit package having a liquid metal-aluminum/copper joint |
US5436793A (en) | 1993-03-31 | 1995-07-25 | Ncr Corporation | Apparatus for containing and cooling an integrated circuit device having a thermally insulative positioning member |
US5427174A (en) | 1993-04-30 | 1995-06-27 | Heat Transfer Devices, Inc. | Method and apparatus for a self contained heat exchanger |
US5672980A (en) | 1993-06-11 | 1997-09-30 | International Business Machines Corporation | Method and apparatus for testing integrated circuit chips |
US5380956A (en) * | 1993-07-06 | 1995-01-10 | Sun Microsystems, Inc. | Multi-chip cooling module and method |
US5488835A (en) | 1993-07-28 | 1996-02-06 | Howenstine; Mervin W. | Methods and devices for energy conservation in refrigerated chambers |
US5727618A (en) | 1993-08-23 | 1998-03-17 | Sdl Inc | Modular microchannel heat exchanger |
US5704416A (en) * | 1993-09-10 | 1998-01-06 | Aavid Laboratories, Inc. | Two phase component cooler |
WO1995009338A1 (en) | 1993-09-27 | 1995-04-06 | Eberhard Paul | Channel heat exchanger |
US5514906A (en) | 1993-11-10 | 1996-05-07 | Fujitsu Limited | Apparatus for cooling semiconductor chips in multichip modules |
KR100353020B1 (en) | 1993-12-28 | 2003-01-10 | 쇼와 덴코 가부시키가이샤 | Multilayer Heat Exchanger |
JP3020790B2 (en) | 1993-12-28 | 2000-03-15 | 株式会社日立製作所 | Heat pipe type cooling device and vehicle control device using the same |
US5383340A (en) * | 1994-03-24 | 1995-01-24 | Aavid Laboratories, Inc. | Two-phase cooling system for laptop computers |
US5647429A (en) | 1994-06-16 | 1997-07-15 | Oktay; Sevgin | Coupled, flux transformer heat pipes |
US5544696A (en) | 1994-07-01 | 1996-08-13 | The United States Of America As Represented By The Secretary Of The Air Force | Enhanced nucleate boiling heat transfer for electronic cooling and thermal energy transfer |
US6126723A (en) | 1994-07-29 | 2000-10-03 | Battelle Memorial Institute | Microcomponent assembly for efficient contacting of fluid |
US5811062A (en) | 1994-07-29 | 1998-09-22 | Battelle Memorial Institute | Microcomponent chemical process sheet architecture |
US6129973A (en) | 1994-07-29 | 2000-10-10 | Battelle Memorial Institute | Microchannel laminated mass exchanger and method of making |
US5611214A (en) | 1994-07-29 | 1997-03-18 | Battelle Memorial Institute | Microcomponent sheet architecture |
US5539153A (en) | 1994-08-08 | 1996-07-23 | Hewlett-Packard Company | Method of bumping substrates by contained paste deposition |
US5641400A (en) | 1994-10-19 | 1997-06-24 | Hewlett-Packard Company | Use of temperature control devices in miniaturized planar column devices and miniaturized total analysis systems |
US5508234A (en) * | 1994-10-31 | 1996-04-16 | International Business Machines Corporation | Microcavity structures, fabrication processes, and applications thereof |
JP3355824B2 (en) | 1994-11-04 | 2002-12-09 | 株式会社デンソー | Corrugated fin heat exchanger |
US5585069A (en) | 1994-11-10 | 1996-12-17 | David Sarnoff Research Center, Inc. | Partitioned microelectronic and fluidic device array for clinical diagnostics and chemical synthesis |
US5676198A (en) | 1994-11-15 | 1997-10-14 | Sundstrand Corporation | Cooling apparatus for an electronic component |
US5876655A (en) | 1995-02-21 | 1999-03-02 | E. I. Du Pont De Nemours And Company | Method for eliminating flow wrinkles in compression molded panels |
US6227809B1 (en) | 1995-03-09 | 2001-05-08 | University Of Washington | Method for making micropumps |
DE19514548C1 (en) | 1995-04-20 | 1996-10-02 | Daimler Benz Ag | Method of manufacturing a micro cooler |
JP3113793B2 (en) | 1995-05-02 | 2000-12-04 | 株式会社エヌ・ティ・ティ ファシリティーズ | Air conditioning system |
US5548605A (en) | 1995-05-15 | 1996-08-20 | The Regents Of The University Of California | Monolithic microchannel heatsink |
US5622221A (en) | 1995-05-17 | 1997-04-22 | Taco, Inc. | Integrated zoning circulator with priority controller |
US5575929A (en) | 1995-06-05 | 1996-11-19 | The Regents Of The University Of California | Method for making circular tubular channels with two silicon wafers |
US5696405A (en) | 1995-10-13 | 1997-12-09 | Lucent Technologies Inc. | Microelectronic package with device cooling |
JPH09129790A (en) * | 1995-11-07 | 1997-05-16 | Toshiba Corp | Heat sink device |
US5705018A (en) | 1995-12-13 | 1998-01-06 | Hartley; Frank T. | Micromachined peristaltic pump |
US5658190A (en) | 1995-12-15 | 1997-08-19 | Micron Technology, Inc. | Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers |
JP3029792B2 (en) * | 1995-12-28 | 2000-04-04 | 日本サーボ株式会社 | Multi-phase permanent magnet type rotating electric machine |
US6039114A (en) * | 1996-01-04 | 2000-03-21 | Daimler - Benz Aktiengesellschaft | Cooling body having lugs |
US5579828A (en) | 1996-01-16 | 1996-12-03 | Hudson Products Corporation | Flexible insert for heat pipe freeze protection |
US6010316A (en) | 1996-01-16 | 2000-01-04 | The Board Of Trustees Of The Leland Stanford Junior University | Acoustic micropump |
JP3763582B2 (en) | 1996-02-13 | 2006-04-05 | アセア ブラウン ボベリ アクチボラグ | Equipment for casting in molds |
US5768104A (en) | 1996-02-22 | 1998-06-16 | Cray Research, Inc. | Cooling approach for high power integrated circuits mounted on printed circuit boards |
US5675473A (en) | 1996-02-23 | 1997-10-07 | Motorola, Inc. | Apparatus and method for shielding an electronic module from electromagnetic radiation |
US5703536A (en) | 1996-04-08 | 1997-12-30 | Harris Corporation | Liquid cooling system for high power solid state AM transmitter |
US5885470A (en) | 1997-04-14 | 1999-03-23 | Caliper Technologies Corporation | Controlled fluid transport in microfabricated polymeric substrates |
US5957194A (en) | 1996-06-27 | 1999-09-28 | Advanced Thermal Solutions, Inc. | Plate fin heat exchanger having fluid control means |
US5800690A (en) | 1996-07-03 | 1998-09-01 | Caliper Technologies Corporation | Variable control of electroosmotic and/or electrophoretic forces within a fluid-containing structure via electrical forces |
DE19628548A1 (en) | 1996-07-16 | 1998-01-22 | Abb Patent Gmbh | Heat sink profile for air cooling device for semiconductor components |
US5801442A (en) | 1996-07-22 | 1998-09-01 | Northrop Grumman Corporation | Microchannel cooling of high power semiconductor devices |
US5692558A (en) | 1996-07-22 | 1997-12-02 | Northrop Grumman Corporation | Microchannel cooling using aviation fuels for airborne electronics |
US5763951A (en) | 1996-07-22 | 1998-06-09 | Northrop Grumman Corporation | Non-mechanical magnetic pump for liquid cooling |
US5731954A (en) * | 1996-08-22 | 1998-03-24 | Cheon; Kioan | Cooling system for computer |
JPH1070219A (en) | 1996-08-27 | 1998-03-10 | Fujitsu Ltd | Packaged module cooling device |
JPH1084139A (en) | 1996-09-09 | 1998-03-31 | Technova:Kk | Thermoelectric conversion device |
DE29717480U1 (en) | 1996-09-30 | 1998-02-05 | Siemens Ag | System for cooling speed-controlled drives |
US5835345A (en) | 1996-10-02 | 1998-11-10 | Sdl, Inc. | Cooler for removing heat from a heated region |
DE19643717A1 (en) | 1996-10-23 | 1998-04-30 | Asea Brown Boveri | Liquid cooling device for a high-performance semiconductor module |
US5774779A (en) | 1996-11-06 | 1998-06-30 | Materials And Electrochemical Research (Mer) Corporation | Multi-channel structures and processes for making such structures |
US5963887A (en) | 1996-11-12 | 1999-10-05 | The United States Of America As Represented By The Secretary Of The Navy | Apparatus for optimizing the rotational speed of cooling fans |
JP3268734B2 (en) | 1996-11-15 | 2002-03-25 | 古河電気工業株式会社 | Method of manufacturing electronic device heat radiation unit using heat pipe |
US6167948B1 (en) | 1996-11-18 | 2001-01-02 | Novel Concepts, Inc. | Thin, planar heat spreader |
JPH10176768A (en) | 1996-11-27 | 1998-06-30 | Xerox Corp | Microdevice supporting system and array of microdevice |
US5870823A (en) | 1996-11-27 | 1999-02-16 | International Business Machines Corporation | Method of forming a multilayer electronic packaging substrate with integral cooling channels |
US5927390A (en) | 1996-12-13 | 1999-07-27 | Caterpillar Inc. | Radiator arrangement with offset modular cores |
US5964092A (en) | 1996-12-13 | 1999-10-12 | Nippon Sigmax, Co., Ltd. | Electronic cooling apparatus |
JPH10190071A (en) | 1996-12-20 | 1998-07-21 | Aisin Seiki Co Ltd | Multistage electronic cooling device |
US5898572A (en) | 1996-12-24 | 1999-04-27 | Decibel Instruments, Inc. | Method and apparatus for the mitigation of noise generated by personal computers |
SE9700205D0 (en) | 1997-01-24 | 1997-01-24 | Peter Lindberg | Integrated microfluidic element |
DE19710783C2 (en) | 1997-03-17 | 2003-08-21 | Curamik Electronics Gmbh | Coolers for use as a heat sink for electrical components or circuits |
DE59808217D1 (en) * | 1997-03-21 | 2003-06-12 | Stefan Battlogg | camshaft |
WO1998049548A1 (en) | 1997-04-25 | 1998-11-05 | Caliper Technologies Corporation | Microfluidic devices incorporating improved channel geometries |
AU7170298A (en) | 1997-04-30 | 1998-11-24 | Orion Research Inc. | Capillary electrophoretic separation system |
US5880524A (en) | 1997-05-05 | 1999-03-09 | Intel Corporation | Heat pipe lid for electronic packages |
US5997713A (en) | 1997-05-08 | 1999-12-07 | Nanosciences Corporation | Silicon etching process for making microchannel plates |
US6090251A (en) | 1997-06-06 | 2000-07-18 | Caliper Technologies, Inc. | Microfabricated structures for facilitating fluid introduction into microfluidic devices |
US5869004A (en) * | 1997-06-09 | 1999-02-09 | Caliper Technologies Corp. | Methods and apparatus for in situ concentration and/or dilution of materials in microfluidic systems |
US5942093A (en) | 1997-06-18 | 1999-08-24 | Sandia Corporation | Electro-osmotically driven liquid delivery method and apparatus |
US5901037A (en) | 1997-06-18 | 1999-05-04 | Northrop Grumman Corporation | Closed loop liquid cooling for semiconductor RF amplifier modules |
US6013164A (en) | 1997-06-25 | 2000-01-11 | Sandia Corporation | Electokinetic high pressure hydraulic system |
US6019882A (en) * | 1997-06-25 | 2000-02-01 | Sandia Corporation | Electrokinetic high pressure hydraulic system |
US6277257B1 (en) | 1997-06-25 | 2001-08-21 | Sandia Corporation | Electrokinetic high pressure hydraulic system |
US5847452A (en) | 1997-06-30 | 1998-12-08 | Sun Microsystems, Inc. | Post mounted heat sink method and apparatus |
US6001231A (en) | 1997-07-15 | 1999-12-14 | Caliper Technologies Corp. | Methods and systems for monitoring and controlling fluid flow rates in microfluidic systems |
US6034872A (en) * | 1997-07-16 | 2000-03-07 | International Business Machines Corporation | Cooling computer systems |
US6907921B2 (en) | 1998-06-18 | 2005-06-21 | 3M Innovative Properties Company | Microchanneled active fluid heat exchanger |
US6069791A (en) | 1997-08-14 | 2000-05-30 | Fujikura Ltd. | Cooling device for notebook personal computer |
JP4048579B2 (en) | 1997-08-28 | 2008-02-20 | 住友電気工業株式会社 | Heat dissipating body including refrigerant flow path and manufacturing method thereof |
US6400012B1 (en) | 1997-09-17 | 2002-06-04 | Advanced Energy Voorhees, Inc. | Heat sink for use in cooling an integrated circuit |
US5909057A (en) | 1997-09-23 | 1999-06-01 | Lsi Logic Corporation | Integrated heat spreader/stiffener with apertures for semiconductor package |
GB2329909A (en) | 1997-10-03 | 1999-04-07 | Wright M & Sons Ltd | Woven protective barrier fabric |
US5842787A (en) | 1997-10-09 | 1998-12-01 | Caliper Technologies Corporation | Microfluidic systems incorporating varied channel dimensions |
US5836750A (en) | 1997-10-09 | 1998-11-17 | Honeywell Inc. | Electrostatically actuated mesopump having a plurality of elementary cells |
US5945217A (en) | 1997-10-14 | 1999-08-31 | Gore Enterprise Holdings, Inc. | Thermally conductive polytrafluoroethylene article |
US6174675B1 (en) | 1997-11-25 | 2001-01-16 | Caliper Technologies Corp. | Electrical current for controlling fluid parameters in microchannels |
US6140860A (en) | 1997-12-31 | 2000-10-31 | Intel Corporation | Thermal sensing circuit |
US6167910B1 (en) | 1998-01-20 | 2001-01-02 | Caliper Technologies Corp. | Multi-layer microfluidic devices |
US6031751A (en) | 1998-01-20 | 2000-02-29 | Reliance Electric Industrial Company | Small volume heat sink/electronic assembly |
US6100541A (en) | 1998-02-24 | 2000-08-08 | Caliper Technologies Corporation | Microfluidic devices and systems incorporating integrated optical elements |
US6084178A (en) | 1998-02-27 | 2000-07-04 | Hewlett-Packard Company | Perimeter clamp for mounting and aligning a semiconductor component as part of a field replaceable unit (FRU) |
US6355505B1 (en) | 1998-04-08 | 2002-03-12 | Fuji Photo Film Co., Ltd. | Heat sink and method of manufacturing heat sink |
US6125902A (en) | 1998-04-17 | 2000-10-03 | Guddal; Karl | Apparatus for applying an improved adhesive to sheet insulation having drainage channels |
US6493221B2 (en) | 1998-05-05 | 2002-12-10 | Intel Corporation | Computer peripheral bay cooling apparatus |
US6019165A (en) | 1998-05-18 | 2000-02-01 | Batchelder; John Samuel | Heat exchange apparatus |
US6227287B1 (en) | 1998-05-25 | 2001-05-08 | Denso Corporation | Cooling apparatus by boiling and cooling refrigerant |
US6196307B1 (en) * | 1998-06-17 | 2001-03-06 | Intersil Americas Inc. | High performance heat exchanger and method |
US5940270A (en) | 1998-07-08 | 1999-08-17 | Puckett; John Christopher | Two-phase constant-pressure closed-loop water cooling system for a heat producing device |
US5965813A (en) | 1998-07-23 | 1999-10-12 | Industry Technology Research Institute | Integrated flow sensor |
US6129260A (en) | 1998-08-19 | 2000-10-10 | Fravillig Technologies Company | Solderable structures |
US6119729A (en) | 1998-09-14 | 2000-09-19 | Arise Technologies Corporation | Freeze protection apparatus for fluid transport passages |
US6146103A (en) | 1998-10-09 | 2000-11-14 | The Regents Of The University Of California | Micromachined magnetohydrodynamic actuators and sensors |
US6058014A (en) | 1998-10-13 | 2000-05-02 | International Business Machines Corporation | Enhanced mounting hardware for a circuit board |
US6021045A (en) * | 1998-10-26 | 2000-02-01 | Chip Coolers, Inc. | Heat sink assembly with threaded collar and multiple pressure capability |
US6032689A (en) * | 1998-10-30 | 2000-03-07 | Industrial Technology Research Institute | Integrated flow controller module |
EP1003006A1 (en) | 1998-11-19 | 2000-05-24 | Franz Isella S.p.A. | Hybrid system of passive cooling using heat pipes |
US6086330A (en) | 1998-12-21 | 2000-07-11 | Motorola, Inc. | Low-noise, high-performance fan |
US6313992B1 (en) | 1998-12-22 | 2001-11-06 | James J. Hildebrandt | Method and apparatus for increasing the power density of integrated circuit boards and their components |
US6365962B1 (en) | 2000-03-29 | 2002-04-02 | Intel Corporation | Flip-chip on flex for high performance packaging applications |
US6253836B1 (en) | 1999-05-24 | 2001-07-03 | Compaq Computer Corporation | Flexible heat pipe structure and associated methods for dissipating heat in electronic apparatus |
US6406605B1 (en) | 1999-06-01 | 2002-06-18 | Ysi Incorporated | Electroosmotic flow controlled microfluidic devices |
US6096656A (en) | 1999-06-24 | 2000-08-01 | Sandia Corporation | Formation of microchannels from low-temperature plasma-deposited silicon oxynitride |
US6234240B1 (en) | 1999-07-01 | 2001-05-22 | Kioan Cheon | Fanless cooling system for computer |
US6131650A (en) | 1999-07-20 | 2000-10-17 | Thermal Corp. | Fluid cooled single phase heat sink |
US6396706B1 (en) | 1999-07-30 | 2002-05-28 | Credence Systems Corporation | Self-heating circuit board |
JP3518434B2 (en) | 1999-08-11 | 2004-04-12 | 株式会社日立製作所 | Multi-chip module cooling system |
US6488838B1 (en) * | 1999-08-17 | 2002-12-03 | Battelle Memorial Institute | Chemical reactor and method for gas phase reactant catalytic reactions |
US6360814B1 (en) * | 1999-08-31 | 2002-03-26 | Denso Corporation | Cooling device boiling and condensing refrigerant |
US6216343B1 (en) * | 1999-09-02 | 2001-04-17 | The United States Of America As Represented By The Secretary Of The Air Force | Method of making micro channel heat pipe having corrugated fin elements |
US6210986B1 (en) * | 1999-09-23 | 2001-04-03 | Sandia Corporation | Microfluidic channel fabrication method |
US6544662B2 (en) | 1999-10-25 | 2003-04-08 | Alliedsignal Inc. | Process for manufacturing of brazed multi-channeled structures |
US6166907A (en) | 1999-11-26 | 2000-12-26 | Chien; Chuan-Fu | CPU cooling system |
US7630198B2 (en) | 2006-03-08 | 2009-12-08 | Cray Inc. | Multi-stage air movers for cooling computer systems and for other uses |
US6729383B1 (en) | 1999-12-16 | 2004-05-04 | The United States Of America As Represented By The Secretary Of The Navy | Fluid-cooled heat sink with turbulence-enhancing support pins |
US6324075B1 (en) | 1999-12-20 | 2001-11-27 | Intel Corporation | Partially covered motherboard with EMI partition gateway |
US6154363A (en) | 1999-12-29 | 2000-11-28 | Chang; Neng Chao | Electronic device cooling arrangement |
US6415860B1 (en) | 2000-02-09 | 2002-07-09 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Crossflow micro heat exchanger |
US6337794B1 (en) | 2000-02-11 | 2002-01-08 | International Business Machines Corporation | Isothermal heat sink with tiered cooling channels |
US6301109B1 (en) | 2000-02-11 | 2001-10-09 | International Business Machines Corporation | Isothermal heat sink with cross-flow openings between channels |
US6253835B1 (en) | 2000-02-11 | 2001-07-03 | International Business Machines Corporation | Isothermal heat sink with converging, diverging channels |
DE10008383A1 (en) | 2000-02-23 | 2001-09-06 | Loh Kg Rittal Werk | Control cabinet or housing with an air conditioning device |
US6417060B2 (en) | 2000-02-25 | 2002-07-09 | Borealis Technical Limited | Method for making a diode device |
EP1266548B2 (en) | 2000-03-21 | 2015-07-29 | Liebert Corporation | Method and apparatus for cooling electronic enclosures |
US6257320B1 (en) | 2000-03-28 | 2001-07-10 | Alec Wargo | Heat sink device for power semiconductors |
US6366467B1 (en) * | 2000-03-31 | 2002-04-02 | Intel Corporation | Dual-socket interposer and method of fabrication therefor |
TW477515U (en) | 2000-05-19 | 2002-02-21 | Yau-Huei Lai | Improved heat sink holding device |
US6787052B1 (en) | 2000-06-19 | 2004-09-07 | Vladimir Vaganov | Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers |
US6366462B1 (en) * | 2000-07-18 | 2002-04-02 | International Business Machines Corporation | Electronic module with integral refrigerant evaporator assembly and control system therefore |
US6362958B1 (en) | 2000-08-11 | 2002-03-26 | Ming-Chuan Yu | Detachable cooling device for computer |
US6317326B1 (en) | 2000-09-14 | 2001-11-13 | Sun Microsystems, Inc. | Integrated circuit device package and heat dissipation device |
US6388317B1 (en) | 2000-09-25 | 2002-05-14 | Lockheed Martin Corporation | Solid-state chip cooling by use of microchannel coolant flow |
US6324058B1 (en) | 2000-10-25 | 2001-11-27 | Chieh-Jen Hsiao | Heat-dissipating apparatus for an integrated circuit device |
US6367544B1 (en) | 2000-11-21 | 2002-04-09 | Thermal Corp. | Thermal jacket for reducing condensation and method for making same |
US6367543B1 (en) | 2000-12-11 | 2002-04-09 | Thermal Corp. | Liquid-cooled heat sink with thermal jacket |
JP2002188876A (en) | 2000-12-20 | 2002-07-05 | Hitachi Ltd | Liquid cooling system and personal computer provided with the system |
US6639799B2 (en) | 2000-12-22 | 2003-10-28 | Intel Corporation | Integrated vapor chamber heat sink and spreader and an embedded direct heat pipe attachment |
US6563703B2 (en) | 2000-12-27 | 2003-05-13 | Intel Corporation | Portable and plugable thermal and power solution for a notebook or handheld device |
US7398821B2 (en) | 2001-03-12 | 2008-07-15 | Davis Energy Group | Integrated ventilation cooling system |
US6424531B1 (en) | 2001-03-13 | 2002-07-23 | Delphi Technologies, Inc. | High performance heat sink for electronics cooling |
US7462852B2 (en) | 2001-12-17 | 2008-12-09 | Tecomet, Inc. | Devices, methods, and systems involving cast collimators |
WO2002102124A2 (en) | 2001-06-12 | 2002-12-19 | Liebert Corporation | Single or dual buss thermal transfer system |
DE10132874A1 (en) | 2001-07-06 | 2003-01-23 | Zdenko Knezevic | Cooling system comprises a cooling circuit with a cooler, a fan, a pump and a temperature sensor/reducer, a cooling medium and means for fixing the cooling circuit |
JP3690658B2 (en) | 2001-07-13 | 2005-08-31 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Heat sink, cooling member, semiconductor substrate cooling apparatus, computer, and heat dissipation method |
DE10141525B4 (en) | 2001-08-24 | 2009-12-31 | ZAE Bayern Bayerisches Zentrum für angewandte Energieforschung eV | Mass and heat exchange reactor |
JP3636118B2 (en) | 2001-09-04 | 2005-04-06 | 株式会社日立製作所 | Water cooling device for electronic equipment |
US6808011B2 (en) | 2001-09-26 | 2004-10-26 | Thermal.Corp. | Heat pipe system for cooling flywheel energy storage systems |
US20030205363A1 (en) | 2001-11-09 | 2003-11-06 | International Business Machines Corporation | Enhanced air cooling of electronic devices using fluid phase change heat transfer |
FR2832336B1 (en) | 2001-11-22 | 2004-02-20 | Air Liquide | BRAZED COPPER HEAT EXCHANGERS AND MANUFACTURING METHOD THEREOF |
IL147394A0 (en) | 2001-12-30 | 2002-08-14 | Active Cool Ltd | Thermoelectric active cooling system for a computer processor with reduced audible noise and emi noise audio noise |
US6679315B2 (en) * | 2002-01-14 | 2004-01-20 | Marconi Communications, Inc. | Small scale chip cooler assembly |
US6606251B1 (en) * | 2002-02-07 | 2003-08-12 | Cooligy Inc. | Power conditioning module |
US6914779B2 (en) | 2002-02-15 | 2005-07-05 | Microsoft Corporation | Controlling thermal, acoustic, and/or electromagnetic properties of a computing device |
US6775996B2 (en) | 2002-02-22 | 2004-08-17 | Advanced Thermal Sciences Corp. | Systems and methods for temperature control |
US6863117B2 (en) | 2002-02-26 | 2005-03-08 | Mikros Manufacturing, Inc. | Capillary evaporator |
US6787899B2 (en) | 2002-03-12 | 2004-09-07 | Intel Corporation | Electronic assemblies with solidified thixotropic thermal interface material |
US6988534B2 (en) | 2002-11-01 | 2006-01-24 | Cooligy, Inc. | Method and apparatus for flexible fluid delivery for cooling desired hot spots in a heat producing device |
US20040008483A1 (en) | 2002-07-13 | 2004-01-15 | Kioan Cheon | Water cooling type cooling system for electronic device |
US6724632B2 (en) | 2002-07-18 | 2004-04-20 | Hon Hai Precision Ind. Co., Ltd. | Heat sink assembly with adjustable clip |
TW578992U (en) | 2002-09-09 | 2004-03-01 | Hon Hai Prec Ind Co Ltd | Heat sink assembly |
EP1575415B1 (en) | 2002-09-12 | 2019-02-20 | Zoll Circulation, Inc. | System for determining and controlling core body temperature |
US6834515B2 (en) | 2002-09-13 | 2004-12-28 | Air Products And Chemicals, Inc. | Plate-fin exchangers with textured surfaces |
AU2003270882A1 (en) | 2002-09-23 | 2004-05-04 | Cooligy, Inc. | Micro-fabricated electrokinetic pump with on-frit electrode |
US6881039B2 (en) | 2002-09-23 | 2005-04-19 | Cooligy, Inc. | Micro-fabricated electrokinetic pump |
US6807056B2 (en) | 2002-09-24 | 2004-10-19 | Hitachi, Ltd. | Electronic equipment |
US6940298B2 (en) | 2002-09-30 | 2005-09-06 | Teradyne, Inc. | High fidelity electrical probe |
US6994151B2 (en) * | 2002-10-22 | 2006-02-07 | Cooligy, Inc. | Vapor escape microchannel heat exchanger |
US6986382B2 (en) * | 2002-11-01 | 2006-01-17 | Cooligy Inc. | Interwoven manifolds for pressure drop reduction in microchannel heat exchangers |
US7806168B2 (en) | 2002-11-01 | 2010-10-05 | Cooligy Inc | Optimal spreader system, device and method for fluid cooled micro-scaled heat exchange |
US7000684B2 (en) | 2002-11-01 | 2006-02-21 | Cooligy, Inc. | Method and apparatus for efficient vertical fluid delivery for cooling a heat producing device |
US7156159B2 (en) | 2003-03-17 | 2007-01-02 | Cooligy, Inc. | Multi-level microchannel heat exchangers |
AU2003286855A1 (en) | 2002-11-01 | 2004-06-07 | Cooligy, Inc. | Method and apparatus for achieving temperature uniformity and hot spot cooling in a heat producing device |
CN100471668C (en) * | 2002-11-20 | 2009-03-25 | 同和控股(集团)有限公司 | Metal/ceramic adhered products |
US6775137B2 (en) | 2002-11-25 | 2004-08-10 | International Business Machines Corporation | Method and apparatus for combined air and liquid cooling of stacked electronics components |
US6778393B2 (en) | 2002-12-02 | 2004-08-17 | International Business Machines Corporation | Cooling device with multiple compliant elements |
US20040107718A1 (en) | 2002-12-06 | 2004-06-10 | Michael Bowman | Method, system and apparatus for cooling high power density devices |
US6945324B2 (en) | 2002-12-17 | 2005-09-20 | Cohand Technology Co., Ltd. | Controlling method for the discharge of coolant medium in the heat exchange wind box |
KR20040065626A (en) | 2003-01-15 | 2004-07-23 | 엘지전자 주식회사 | Heat exchanger |
US7090001B2 (en) | 2003-01-31 | 2006-08-15 | Cooligy, Inc. | Optimized multiple heat pipe blocks for electronics cooling |
US7293423B2 (en) | 2004-06-04 | 2007-11-13 | Cooligy Inc. | Method and apparatus for controlling freezing nucleation and propagation |
US7044196B2 (en) | 2003-01-31 | 2006-05-16 | Cooligy,Inc | Decoupled spring-loaded mounting apparatus and method of manufacturing thereof |
US7201012B2 (en) | 2003-01-31 | 2007-04-10 | Cooligy, Inc. | Remedies to prevent cracking in a liquid system |
JP4199018B2 (en) | 2003-02-14 | 2008-12-17 | 株式会社日立製作所 | Rack mount server system |
US7017654B2 (en) * | 2003-03-17 | 2006-03-28 | Cooligy, Inc. | Apparatus and method of forming channels in a heat-exchanging device |
JP2004302996A (en) | 2003-03-31 | 2004-10-28 | Toshiba Corp | Information processor and fan control method |
US7337832B2 (en) | 2003-04-30 | 2008-03-04 | Valeo, Inc. | Heat exchanger |
DE10319667A1 (en) | 2003-05-02 | 2004-11-18 | Voith Paper Patent Gmbh | Polyurethane or rubber press drum for manufacture of paper, carton or tissue paper has smaller diameter outer margins |
US7483261B2 (en) | 2003-06-27 | 2009-01-27 | Nec Corporation | Cooling device for an electronic equipment |
US6819563B1 (en) | 2003-07-02 | 2004-11-16 | International Business Machines Corporation | Method and system for cooling electronics racks using pre-cooled air |
US7591302B1 (en) | 2003-07-23 | 2009-09-22 | Cooligy Inc. | Pump and fan control concepts in a cooling system |
US7021369B2 (en) * | 2003-07-23 | 2006-04-04 | Cooligy, Inc. | Hermetic closed loop fluid system |
JP2005064186A (en) | 2003-08-11 | 2005-03-10 | Hitachi Ltd | Electronic apparatus equipped with cooling system |
US7310230B2 (en) | 2003-08-21 | 2007-12-18 | Delta Design, Inc. | Temperature control system which sprays liquid coolant droplets against an IC-module at a sub-atmospheric pressure |
US20050061013A1 (en) | 2003-09-10 | 2005-03-24 | Bond Richard C. | Method and apparatus for cooling devices that in use generate unwanted heat |
EP1682995A2 (en) | 2003-11-07 | 2006-07-26 | Asetek A/S | Cooling system for a computer system |
US7273088B2 (en) | 2003-12-17 | 2007-09-25 | Hewlett-Packard Development Company, L.P. | One or more heat exchanger components in major part operably locatable outside computer chassis |
US7295444B1 (en) | 2003-12-31 | 2007-11-13 | Ncr Corporation | Delivering chilled air to components in a hardware cabinet |
US6896612B1 (en) | 2004-01-26 | 2005-05-24 | Sun Microsystems, Inc. | Self-cooled electronic equipment enclosure with failure tolerant cooling system and method of operation |
WO2005080901A1 (en) * | 2004-02-24 | 2005-09-01 | Spec Co., Ltd | Micro heat exchanger for fuel cell and manufacturing method thereof |
US6955212B1 (en) | 2004-04-20 | 2005-10-18 | Adda Corporation | Water-cooler radiator module |
US7011143B2 (en) | 2004-05-04 | 2006-03-14 | International Business Machines Corporation | Method and apparatus for cooling electronic components |
US7248472B2 (en) | 2004-05-21 | 2007-07-24 | Hewlett-Packard Development Company, L.P. | Air distribution system |
US7188662B2 (en) * | 2004-06-04 | 2007-03-13 | Cooligy, Inc. | Apparatus and method of efficient fluid delivery for cooling a heat producing device |
US7301773B2 (en) | 2004-06-04 | 2007-11-27 | Cooligy Inc. | Semi-compliant joining mechanism for semiconductor cooling applications |
US7178512B1 (en) | 2004-06-23 | 2007-02-20 | Brunswick Corporation | Fuel system for a marine vessel with a gaseous purge fuel container |
JP4056504B2 (en) * | 2004-08-18 | 2008-03-05 | Necディスプレイソリューションズ株式会社 | COOLING DEVICE AND ELECTRONIC DEVICE HAVING THE SAME |
DE102004042154B4 (en) | 2004-08-31 | 2011-01-05 | Asia Vital Components Co., Ltd. | cooler |
US7397665B2 (en) | 2004-12-08 | 2008-07-08 | Optherm - Thermal Solutions Ltd. | Integral heat-dissipation system for electronic boards |
US6973801B1 (en) | 2004-12-09 | 2005-12-13 | International Business Machines Corporation | Cooling system and method employing a closed loop coolant path and micro-scaled cooling structure within an electronics subsystem of an electronics rack |
US7303003B2 (en) | 2004-12-24 | 2007-12-04 | Showa Denko K.K. | Heat exchanger |
US7116552B2 (en) | 2005-01-31 | 2006-10-03 | Chaun-Choung Technology Corp. | Heat-dissipation apparatus of portable computer |
DE102005005296B3 (en) | 2005-02-04 | 2006-05-18 | Knürr AG | Cooling unit for electronic modules used in server, comprises a supply of cool air, an air-liquid heat exchanger, and ventilators |
US20060187639A1 (en) | 2005-02-23 | 2006-08-24 | Lytron, Inc. | Electronic component cooling and interface system |
GB2424257A (en) | 2005-03-18 | 2006-09-20 | Mechadyne Plc | Single cam phaser camshaft with adjustable connections between the inner shaft and associated cam lobes |
US7385810B2 (en) | 2005-04-18 | 2008-06-10 | International Business Machines Corporation | Apparatus and method for facilitating cooling of an electronics rack employing a heat exchange assembly mounted to an outlet door cover of the electronics rack |
US7871578B2 (en) | 2005-05-02 | 2011-01-18 | United Technologies Corporation | Micro heat exchanger with thermally conductive porous network |
US7233494B2 (en) | 2005-05-06 | 2007-06-19 | International Business Machines Corporation | Cooling apparatus, cooled electronic module and methods of fabrication thereof employing an integrated manifold and a plurality of thermally conductive fins |
US7342789B2 (en) | 2005-06-30 | 2008-03-11 | International Business Machines Corporation | Method and apparatus for cooling an equipment enclosure through closed-loop, liquid-assisted air cooling in combination with direct liquid cooling |
KR100599338B1 (en) | 2005-07-05 | 2006-07-19 | 모딘코리아 유한회사 | Manufacturing process of header tank, head tank thereof and heat exchanger including the same |
DE102005033150A1 (en) * | 2005-07-13 | 2007-01-25 | Atotech Deutschland Gmbh | Microstructured cooler and its use |
CN2888141Y (en) | 2005-07-22 | 2007-04-11 | 富准精密工业(深圳)有限公司 | Fan employing pulse width modulation to control rotation speed |
US7719837B2 (en) | 2005-08-22 | 2010-05-18 | Shan Ping Wu | Method and apparatus for cooling a blade server |
US7190583B1 (en) | 2005-08-29 | 2007-03-13 | Verigy Pte Ltd | Self contained, liquid to air cooled, memory test engineering workstation |
US7327571B2 (en) * | 2005-09-06 | 2008-02-05 | Hewlett-Packard Development Company, L.P. | Thermal load balancing systems and methods |
US7143816B1 (en) | 2005-09-09 | 2006-12-05 | Delphi Technologies, Inc. | Heat sink for an electronic device |
US7434412B1 (en) | 2005-10-27 | 2008-10-14 | Sun Microsystems, Inc. | Computer equipment temperature control system and methods for operating the same |
US7382863B2 (en) | 2005-10-31 | 2008-06-03 | General Electric Company | Anode cooling system for an X-ray tube |
US7626815B2 (en) | 2005-11-14 | 2009-12-01 | Nvidia Corporation | Drive bay heat exchanger |
US20070164088A1 (en) | 2006-01-18 | 2007-07-19 | Kam Dianatkhah | Brazing process for stainless steel heat exchangers |
US20070175621A1 (en) * | 2006-01-31 | 2007-08-02 | Cooligy, Inc. | Re-workable metallic TIM for efficient heat exchange |
TW200809477A (en) | 2006-03-30 | 2008-02-16 | Cooligy Inc | Integrated fluid pump and radiator reservoir |
US7715194B2 (en) | 2006-04-11 | 2010-05-11 | Cooligy Inc. | Methodology of cooling multiple heat sources in a personal computer through the use of multiple fluid-based heat exchanging loops coupled via modular bus-type heat exchangers |
US7562696B2 (en) | 2006-05-16 | 2009-07-21 | Cpumate, Inc. | Juxtaposing structure for heated ends of heat pipes |
KR20090018970A (en) | 2006-05-19 | 2009-02-24 | 슈파컨덕터 테크놀로지스 인코포레이티드 | Heat exchanger assembly |
US20070297136A1 (en) | 2006-06-23 | 2007-12-27 | Sun Micosystems, Inc. | Modular liquid cooling of electronic components while preserving data center integrity |
JP4193910B2 (en) | 2006-06-29 | 2008-12-10 | ダイキン工業株式会社 | Expansion valve with integrated refrigerant flow divider |
US7403384B2 (en) * | 2006-07-26 | 2008-07-22 | Dell Products L.P. | Thermal docking station for electronics |
US7743821B2 (en) | 2006-07-26 | 2010-06-29 | General Electric Company | Air cooled heat exchanger with enhanced heat transfer coefficient fins |
US7430118B1 (en) | 2007-06-04 | 2008-09-30 | Yahoo! Inc. | Cold row encapsulation for server farm cooling system |
CN103298320A (en) | 2007-12-19 | 2013-09-11 | 集群系统公司 | Cooling system for contact cooled electronic modules |
US8250877B2 (en) | 2008-03-10 | 2012-08-28 | Cooligy Inc. | Device and methodology for the removal of heat from an equipment rack by means of heat exchangers mounted to a door |
US8164901B2 (en) | 2008-04-16 | 2012-04-24 | Julius Neudorfer | High efficiency heat removal system for rack mounted computer equipment |
US8254422B2 (en) * | 2008-08-05 | 2012-08-28 | Cooligy Inc. | Microheat exchanger for laser diode cooling |
US20110073292A1 (en) | 2009-09-30 | 2011-03-31 | Madhav Datta | Fabrication of high surface area, high aspect ratio mini-channels and their application in liquid cooling systems |
-
2009
- 2009-08-05 US US12/536,361 patent/US8254422B2/en active Active
- 2009-08-05 WO PCT/US2009/052890 patent/WO2010017321A1/en active Application Filing
- 2009-08-05 US US12/536,402 patent/US8299604B2/en active Active
- 2009-08-05 CN CN2009801375897A patent/CN102171897A/en active Pending
- 2009-08-05 WO PCT/US2009/052897 patent/WO2010017327A1/en active Application Filing
- 2009-08-05 CN CN2009801375882A patent/CN102171378A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4409079A (en) * | 1981-06-24 | 1983-10-11 | Hitachi, Ltd. | Method of metallizing sintered ceramics |
US4497875A (en) * | 1982-02-10 | 1985-02-05 | Hitachi, Ltd. | Ceramic substrate with metal plate |
US5757070A (en) * | 1995-10-24 | 1998-05-26 | Altera Corporation | Integrated circuit package |
US5896869A (en) * | 1997-01-13 | 1999-04-27 | International Business Machines Corporation | Semiconductor package having etched-back silver-copper braze |
US20070152352A1 (en) * | 2003-01-29 | 2007-07-05 | Mckinnell James C | Micro-fabricated device with thermoelectric device and method of making |
US20080110963A1 (en) * | 2006-04-26 | 2008-05-15 | Watlow Electric Manufacturing Company | Methods of securing a thermocouple to a ceramic substrate |
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CN102171897A (en) | 2011-08-31 |
WO2010017327A1 (en) | 2010-02-11 |
US8299604B2 (en) | 2012-10-30 |
US20100035024A1 (en) | 2010-02-11 |
CN102171378A (en) | 2011-08-31 |
US8254422B2 (en) | 2012-08-28 |
US20100032143A1 (en) | 2010-02-11 |
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