WO2010048236A3 - Non-volatile memory having silicon nitride charge trap layer - Google Patents

Non-volatile memory having silicon nitride charge trap layer Download PDF

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Publication number
WO2010048236A3
WO2010048236A3 PCT/US2009/061390 US2009061390W WO2010048236A3 WO 2010048236 A3 WO2010048236 A3 WO 2010048236A3 US 2009061390 W US2009061390 W US 2009061390W WO 2010048236 A3 WO2010048236 A3 WO 2010048236A3
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WO
WIPO (PCT)
Prior art keywords
silicon nitride
memory device
volatile memory
charge trap
trap layer
Prior art date
Application number
PCT/US2009/061390
Other languages
French (fr)
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WO2010048236A2 (en
Inventor
Mihaela Balseanu
Vladimir Zubkov
Li-Qun Xia
Atif Noori
Reza Arghavani
Derek R. Witty
Amir Al-Bayati
Original Assignee
Applied Materials, Inc.
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN2009801424516A priority Critical patent/CN102197483A/en
Priority to JP2011533281A priority patent/JP2012506640A/en
Publication of WO2010048236A2 publication Critical patent/WO2010048236A2/en
Publication of WO2010048236A3 publication Critical patent/WO2010048236A3/en

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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)

Abstract

A flash memory device and methods of forming a flash memory device are provided. In one version, the flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
PCT/US2009/061390 2008-10-21 2009-10-21 Non-volatile memory having silicon nitride charge trap layer WO2010048236A2 (en)

Priority Applications (2)

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CN2009801424516A CN102197483A (en) 2008-10-21 2009-10-21 Non-volatile memory having silicon nitride charge trap layer
JP2011533281A JP2012506640A (en) 2008-10-21 2009-10-21 Nonvolatile memory with silicon nitride charge trapping layer

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US12/255,617 2008-10-21
US12/255,617 US8252653B2 (en) 2008-10-21 2008-10-21 Method of forming a non-volatile memory having a silicon nitride charge trap layer

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KR20110086090A (en) 2011-07-27
US20100096688A1 (en) 2010-04-22
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KR101553554B1 (en) 2015-09-17
TW201025513A (en) 2010-07-01
US8252653B2 (en) 2012-08-28
US20100099247A1 (en) 2010-04-22
US8501568B2 (en) 2013-08-06
US20100096687A1 (en) 2010-04-22

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