WO2010068625A3 - Shaped anode and anode-shield connection for vacuum physical vapor deposition - Google Patents

Shaped anode and anode-shield connection for vacuum physical vapor deposition Download PDF

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Publication number
WO2010068625A3
WO2010068625A3 PCT/US2009/067147 US2009067147W WO2010068625A3 WO 2010068625 A3 WO2010068625 A3 WO 2010068625A3 US 2009067147 W US2009067147 W US 2009067147W WO 2010068625 A3 WO2010068625 A3 WO 2010068625A3
Authority
WO
WIPO (PCT)
Prior art keywords
anode
vacuum chamber
cathode
vapor deposition
side walls
Prior art date
Application number
PCT/US2009/067147
Other languages
French (fr)
Other versions
WO2010068625A2 (en
Inventor
Youming Li
Jeffrey Birkmeyer
Original Assignee
Fujifilm Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corporation filed Critical Fujifilm Corporation
Priority to JP2011540827A priority Critical patent/JP5421388B2/en
Priority to KR1020117014639A priority patent/KR101256856B1/en
Priority to CN2009801491597A priority patent/CN102246271B/en
Publication of WO2010068625A2 publication Critical patent/WO2010068625A2/en
Publication of WO2010068625A3 publication Critical patent/WO2010068625A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Abstract

A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode is configured to include a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma.
PCT/US2009/067147 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition WO2010068625A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011540827A JP5421388B2 (en) 2008-12-12 2009-12-08 Molded anode and anode-shield connection for vacuum physical vapor deposition
KR1020117014639A KR101256856B1 (en) 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition
CN2009801491597A CN102246271B (en) 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/334,253 US8066857B2 (en) 2008-12-12 2008-12-12 Shaped anode and anode-shield connection for vacuum physical vapor deposition
US12/334,253 2008-12-12

Publications (2)

Publication Number Publication Date
WO2010068625A2 WO2010068625A2 (en) 2010-06-17
WO2010068625A3 true WO2010068625A3 (en) 2010-09-10

Family

ID=42239224

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/067147 WO2010068625A2 (en) 2008-12-12 2009-12-08 Shaped anode and anode-shield connection for vacuum physical vapor deposition

Country Status (5)

Country Link
US (1) US8066857B2 (en)
JP (1) JP5421388B2 (en)
KR (1) KR101256856B1 (en)
CN (1) CN102246271B (en)
WO (1) WO2010068625A2 (en)

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JP4142706B2 (en) * 2006-09-28 2008-09-03 富士フイルム株式会社 Film forming apparatus, film forming method, insulating film, dielectric film, piezoelectric film, ferroelectric film, piezoelectric element, and liquid discharge apparatus
EP2368258B1 (en) 2008-11-24 2017-12-20 Evatec AG Rf sputtering arrangement
US8043487B2 (en) * 2008-12-12 2011-10-25 Fujifilm Corporation Chamber shield for vacuum physical vapor deposition
US8540851B2 (en) * 2009-02-19 2013-09-24 Fujifilm Corporation Physical vapor deposition with impedance matching network
US8557088B2 (en) * 2009-02-19 2013-10-15 Fujifilm Corporation Physical vapor deposition with phase shift
US20100206713A1 (en) * 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition
US8133362B2 (en) * 2010-02-26 2012-03-13 Fujifilm Corporation Physical vapor deposition with multi-point clamp
US9181619B2 (en) * 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
JP5843602B2 (en) * 2011-12-22 2016-01-13 キヤノンアネルバ株式会社 Plasma processing equipment
US9340866B2 (en) 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9404176B2 (en) 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
MX2017010676A (en) * 2015-03-18 2017-11-16 Vision Ease Lp Anode shield.
JP6800009B2 (en) * 2015-12-28 2020-12-16 芝浦メカトロニクス株式会社 Plasma processing equipment
JP6869858B2 (en) * 2017-09-14 2021-05-12 株式会社アルバック Sputtering equipment
US20210020484A1 (en) * 2019-07-15 2021-01-21 Applied Materials, Inc. Aperture design for uniformity control in selective physical vapor deposition
JP7326106B2 (en) * 2019-10-16 2023-08-15 株式会社アルバック Sputtering equipment
JP2024504272A (en) * 2021-01-05 2024-01-31 アプライド マテリアルズ インコーポレイテッド Substrate processing method and apparatus using improved shield configuration
US11508563B1 (en) * 2021-05-24 2022-11-22 Applied Materials, Inc. Methods and apparatus for processing a substrate using improved shield configurations
CN115679271A (en) * 2021-07-22 2023-02-03 北京北方华创微电子装备有限公司 Semiconductor process chamber
CN116590681B (en) * 2023-06-16 2023-10-31 中科纳微真空科技(合肥)有限公司 Radio frequency plane cathode

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JP2007042818A (en) * 2005-08-02 2007-02-15 Fujitsu Ltd Depositing apparatus and method

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JPH05263237A (en) * 1992-03-19 1993-10-12 Dainippon Printing Co Ltd Production of transparent electrode film
KR100517474B1 (en) * 1996-07-10 2005-12-07 어플라이드 머티어리얼스, 인코포레이티드 Electrical Floating Shield in Plasma Reactor
JP2007042818A (en) * 2005-08-02 2007-02-15 Fujitsu Ltd Depositing apparatus and method

Also Published As

Publication number Publication date
JP2012512325A (en) 2012-05-31
CN102246271B (en) 2013-08-07
JP5421388B2 (en) 2014-02-19
CN102246271A (en) 2011-11-16
KR20110099118A (en) 2011-09-06
KR101256856B1 (en) 2013-04-22
US8066857B2 (en) 2011-11-29
US20100147680A1 (en) 2010-06-17
WO2010068625A2 (en) 2010-06-17

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