WO2010088066A3 - Solid-state radiation detector with improved sensitivity - Google Patents

Solid-state radiation detector with improved sensitivity Download PDF

Info

Publication number
WO2010088066A3
WO2010088066A3 PCT/US2010/021142 US2010021142W WO2010088066A3 WO 2010088066 A3 WO2010088066 A3 WO 2010088066A3 US 2010021142 W US2010021142 W US 2010021142W WO 2010088066 A3 WO2010088066 A3 WO 2010088066A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
radiation detector
solid
improved sensitivity
state radiation
Prior art date
Application number
PCT/US2010/021142
Other languages
French (fr)
Other versions
WO2010088066A2 (en
Inventor
Henry Chen
Salah Awadalla
Pinghe Lu
Pramodha Marthandam
Original Assignee
Redlen Technologies Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Redlen Technologies Inc. filed Critical Redlen Technologies Inc.
Priority to EP10736204.8A priority Critical patent/EP2392033A4/en
Priority to JP2011548042A priority patent/JP2012516997A/en
Publication of WO2010088066A2 publication Critical patent/WO2010088066A2/en
Publication of WO2010088066A3 publication Critical patent/WO2010088066A3/en
Priority to IL214344A priority patent/IL214344A0/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.
PCT/US2010/021142 2009-02-02 2010-01-15 Solid-state radiation detector with improved sensitivity WO2010088066A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP10736204.8A EP2392033A4 (en) 2009-02-02 2010-01-15 Solid-state radiation detector with improved sensitivity
JP2011548042A JP2012516997A (en) 2009-02-02 2010-01-15 Semiconductor radiation detector with improved sensitivity
IL214344A IL214344A0 (en) 2009-02-02 2011-07-28 Solid-state radiation detector with improved sensitivity

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/364,042 US8614423B2 (en) 2009-02-02 2009-02-02 Solid-state radiation detector with improved sensitivity
US12/364,042 2009-02-02

Publications (2)

Publication Number Publication Date
WO2010088066A2 WO2010088066A2 (en) 2010-08-05
WO2010088066A3 true WO2010088066A3 (en) 2010-10-28

Family

ID=42396283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/021142 WO2010088066A2 (en) 2009-02-02 2010-01-15 Solid-state radiation detector with improved sensitivity

Country Status (5)

Country Link
US (1) US8614423B2 (en)
EP (1) EP2392033A4 (en)
JP (1) JP2012516997A (en)
IL (1) IL214344A0 (en)
WO (1) WO2010088066A2 (en)

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JP5485197B2 (en) * 2011-02-10 2014-05-07 株式会社日立製作所 Radiation measuring device and nuclear medicine diagnostic device
US9000389B2 (en) * 2011-11-22 2015-04-07 General Electric Company Radiation detectors and methods of fabricating radiation detectors
US9006010B2 (en) * 2011-11-22 2015-04-14 General Electric Company Radiation detectors and methods of fabricating radiation detectors
JP5753802B2 (en) * 2012-01-27 2015-07-22 株式会社日立製作所 Semiconductor radiation detector and nuclear medicine diagnostic equipment
CN102798882B (en) * 2012-05-03 2016-07-06 西北核技术研究所 A kind of current mode CZT detector of crimping structure
EP2952299A1 (en) * 2014-06-05 2015-12-09 Aldebaran Robotics Standby mode of a humanoid robot
EP3165947B1 (en) * 2014-07-03 2021-11-24 JX Nippon Mining & Metals Corporation Radiation detector ubm electrode structure body, radiation detector, and method of manufacturing same
US10153321B2 (en) 2014-11-20 2018-12-11 Koninklijke Philips N.V. Radiation detector core assembly and method for constructing the same
CN105977315B (en) * 2016-07-01 2017-05-17 京东方科技集团股份有限公司 Photosensitive device and manufacturing method thereof and photosensitive detector
US10203420B2 (en) 2017-05-11 2019-02-12 Redlen Technologies, Inc. Dual sided tape attachment to cathode electrode of radiation detector
CN108767052A (en) * 2018-05-31 2018-11-06 苏州西奇狄材料科技有限公司 The novel C ZT radiation detectors structure and preparation method of carrier-free injection
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
US11733408B2 (en) 2020-04-28 2023-08-22 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof

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JPS6477969A (en) * 1987-09-18 1989-03-23 Shimadzu Corp Semiconductor radiation detecting element
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Also Published As

Publication number Publication date
JP2012516997A (en) 2012-07-26
IL214344A0 (en) 2011-09-27
WO2010088066A2 (en) 2010-08-05
US8614423B2 (en) 2013-12-24
EP2392033A2 (en) 2011-12-07
US20100193694A1 (en) 2010-08-05
EP2392033A4 (en) 2017-04-19

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