WO2010097064A3 - Laser crystallisation by irradiation - Google Patents

Laser crystallisation by irradiation Download PDF

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Publication number
WO2010097064A3
WO2010097064A3 PCT/DE2009/050072 DE2009050072W WO2010097064A3 WO 2010097064 A3 WO2010097064 A3 WO 2010097064A3 DE 2009050072 W DE2009050072 W DE 2009050072W WO 2010097064 A3 WO2010097064 A3 WO 2010097064A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
regions
irradiation
another
arranged next
Prior art date
Application number
PCT/DE2009/050072
Other languages
German (de)
French (fr)
Other versions
WO2010097064A2 (en
Inventor
Hans-Ulrich Zühlke
Gabriele Eberhardt
Original Assignee
Jenoptik Automatisierungstechnik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Automatisierungstechnik Gmbh filed Critical Jenoptik Automatisierungstechnik Gmbh
Priority to EP09807437A priority Critical patent/EP2401773A2/en
Publication of WO2010097064A2 publication Critical patent/WO2010097064A2/en
Publication of WO2010097064A3 publication Critical patent/WO2010097064A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a method for restructuring a semiconductor layer (2) with a multiplicity of lasers (18, 20, 22) which are arranged next to one another and, by means of respectively assigned beam shaping optics (46, 48, 50), project on the semiconductor layer (2) laser lines (8, 10, 12) arranged next to one another, with marginal regions (15, 17) and inner overlapping regions (14, 16), wherein at least the overlapping regions (14, 16) are projected completely and on passive regions (14, 16) of the semiconductor layer (2) in which the semiconductor layer is removed in a following processing step, and relates to a laser system for carrying out the method.
PCT/DE2009/050072 2009-02-27 2009-12-10 Laser crystallisation by irradiation WO2010097064A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09807437A EP2401773A2 (en) 2009-02-27 2009-12-10 Laser crystallisation by irradiation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009010841A DE102009010841A1 (en) 2009-02-27 2009-02-27 Laser crystallization by irradiation
DE102009010841.6 2009-02-27

Publications (2)

Publication Number Publication Date
WO2010097064A2 WO2010097064A2 (en) 2010-09-02
WO2010097064A3 true WO2010097064A3 (en) 2010-10-21

Family

ID=42371765

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2009/050072 WO2010097064A2 (en) 2009-02-27 2009-12-10 Laser crystallisation by irradiation

Country Status (3)

Country Link
EP (1) EP2401773A2 (en)
DE (1) DE102009010841A1 (en)
WO (1) WO2010097064A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014013015B4 (en) * 2014-09-02 2020-08-20 Friedrich Birkle Cleaning system for surgery

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651824A (en) * 1979-10-04 1981-05-09 Toshiba Corp Preparation of semiconductor device
US5932118A (en) * 1994-05-16 1999-08-03 Sanyo Electric Co., Ltd. Photoprocessing method
JP2000315652A (en) * 1999-04-30 2000-11-14 Sony Corp Method for crystalizing semiconductor thin film and laser irradiation device
US20040040938A1 (en) * 2002-06-14 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
WO2008104346A2 (en) * 2007-02-27 2008-09-04 Carl Zeiss Laser Optics Gmbh Continuous coating installation and methods for producing crystalline thin films and solar cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10042733A1 (en) 2000-08-31 2002-03-28 Inst Physikalische Hochtech Ev Multicrystalline laser-crystallized silicon thin-film solar cell on a transparent substrate
JP2003059858A (en) 2001-08-09 2003-02-28 Sony Corp Laser annealing device and method of manufacturing thin film transistor
DE102004036220B4 (en) 2004-07-26 2009-04-02 Jürgen H. Werner Method for laser doping of solids with a line-focused laser beam
DE102007009924A1 (en) * 2007-02-27 2008-08-28 Carl Zeiss Laser Optics Gmbh Continuous coating apparatus comprises vacuum chamber containing PVD unit for coating surface of substrate and laser crystallization system which illuminates section being coated

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651824A (en) * 1979-10-04 1981-05-09 Toshiba Corp Preparation of semiconductor device
US5932118A (en) * 1994-05-16 1999-08-03 Sanyo Electric Co., Ltd. Photoprocessing method
JP2000315652A (en) * 1999-04-30 2000-11-14 Sony Corp Method for crystalizing semiconductor thin film and laser irradiation device
US20040040938A1 (en) * 2002-06-14 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
WO2008104346A2 (en) * 2007-02-27 2008-09-04 Carl Zeiss Laser Optics Gmbh Continuous coating installation and methods for producing crystalline thin films and solar cells

Also Published As

Publication number Publication date
DE102009010841A1 (en) 2010-09-02
WO2010097064A2 (en) 2010-09-02
EP2401773A2 (en) 2012-01-04

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