WO2010144142A3 - Optical system for a light emitting diode with collection, conduction, phosphor directing, and output means - Google Patents

Optical system for a light emitting diode with collection, conduction, phosphor directing, and output means Download PDF

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Publication number
WO2010144142A3
WO2010144142A3 PCT/US2010/001673 US2010001673W WO2010144142A3 WO 2010144142 A3 WO2010144142 A3 WO 2010144142A3 US 2010001673 W US2010001673 W US 2010001673W WO 2010144142 A3 WO2010144142 A3 WO 2010144142A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
phosphor
optical system
phosphor layer
directing
Prior art date
Application number
PCT/US2010/001673
Other languages
French (fr)
Other versions
WO2010144142A2 (en
Inventor
Brian E. Richardson
Original Assignee
Richardson Brian E
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Richardson Brian E filed Critical Richardson Brian E
Priority to CN2010800262521A priority Critical patent/CN102575830A/en
Priority to EP10778747A priority patent/EP2440842A2/en
Priority to JP2012514947A priority patent/JP2012529769A/en
Publication of WO2010144142A2 publication Critical patent/WO2010144142A2/en
Publication of WO2010144142A3 publication Critical patent/WO2010144142A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/0091Reflectors for light sources using total internal reflection
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/68Details of reflectors forming part of the light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02Combinations of only two kinds of elements
    • F21V13/08Combinations of only two kinds of elements the elements being filters or photoluminescent elements and reflectors
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/06Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for filtering out ultraviolet radiation
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/02Combinations of only two kinds of elements
    • F21V13/04Combinations of only two kinds of elements the elements being reflectors and refractors
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements

Abstract

An optical system (1) with an LED light source (3) utilizes a base (6) with an inverted conical shape to conduct light to a phosphor layer (7). The phosphor layer emits light from both upper and lower surfaces. The base (6) and a substantially mirror image cap element (8) facilitate efficient extraction of the phosphor-generated light from the optical system so that the output of the system is omni-directional light suitable for common lighting applications. The system is very efficient in that nearly all the light generated by the LED is transmitted to the phosphor layer, and nearly all the light emitted from the phosphor layer is output from the system.
PCT/US2010/001673 2009-06-11 2010-06-10 Optical system for a light emitting diode with collection, conduction, phosphor directing, and output means WO2010144142A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010800262521A CN102575830A (en) 2009-06-11 2010-06-10 Optical system for a light emitting diode with collection, conduction, phosphor directing, and output means
EP10778747A EP2440842A2 (en) 2009-06-11 2010-06-10 Optical system for a light emitting diode with collection, conduction, phosphor directing, and output means
JP2012514947A JP2012529769A (en) 2009-06-11 2010-06-10 Optical system for light emitting diodes with collection, conduction, phosphor orientation and output means

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/456,126 2009-06-11
US12/456,126 US8152318B2 (en) 2009-06-11 2009-06-11 Optical system for a light emitting diode with collection, conduction, phosphor directing, and output means

Publications (2)

Publication Number Publication Date
WO2010144142A2 WO2010144142A2 (en) 2010-12-16
WO2010144142A3 true WO2010144142A3 (en) 2011-04-07

Family

ID=43306269

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/001673 WO2010144142A2 (en) 2009-06-11 2010-06-10 Optical system for a light emitting diode with collection, conduction, phosphor directing, and output means

Country Status (6)

Country Link
US (2) US8152318B2 (en)
EP (1) EP2440842A2 (en)
JP (1) JP2012529769A (en)
KR (1) KR20120036960A (en)
CN (1) CN102575830A (en)
WO (1) WO2010144142A2 (en)

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Also Published As

Publication number Publication date
US20120127694A1 (en) 2012-05-24
US8292445B2 (en) 2012-10-23
CN102575830A (en) 2012-07-11
WO2010144142A2 (en) 2010-12-16
EP2440842A2 (en) 2012-04-18
KR20120036960A (en) 2012-04-18
JP2012529769A (en) 2012-11-22
US8152318B2 (en) 2012-04-10
US20100315802A1 (en) 2010-12-16

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