WO2011017119A3 - Wet etching methods for copper removal and planarization in semiconductor processing - Google Patents
Wet etching methods for copper removal and planarization in semiconductor processing Download PDFInfo
- Publication number
- WO2011017119A3 WO2011017119A3 PCT/US2010/043425 US2010043425W WO2011017119A3 WO 2011017119 A3 WO2011017119 A3 WO 2011017119A3 US 2010043425 W US2010043425 W US 2010043425W WO 2011017119 A3 WO2011017119 A3 WO 2011017119A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- etching
- planarization
- complexing agents
- wet etching
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
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- C25D7/00—Electroplating characterised by the article coated
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- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080034653.1A CN102473628B (en) | 2009-08-04 | 2010-07-27 | Wet etching methods for copper removal and planarization in semiconductor processing |
KR1020107027667A KR101227830B1 (en) | 2009-08-04 | 2010-07-27 | Wet etching methods for copper removal and planarization in semiconductor processing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/535,594 US8372757B2 (en) | 2003-10-20 | 2009-08-04 | Wet etching methods for copper removal and planarization in semiconductor processing |
US12/535,594 | 2009-08-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011017119A2 WO2011017119A2 (en) | 2011-02-10 |
WO2011017119A3 true WO2011017119A3 (en) | 2011-06-03 |
Family
ID=43544866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2010/043425 WO2011017119A2 (en) | 2009-08-04 | 2010-07-27 | Wet etching methods for copper removal and planarization in semiconductor processing |
Country Status (5)
Country | Link |
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US (3) | US8372757B2 (en) |
KR (2) | KR101622562B1 (en) |
CN (2) | CN104658904B (en) |
TW (2) | TWI505404B (en) |
WO (1) | WO2011017119A2 (en) |
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US7972970B2 (en) * | 2003-10-20 | 2011-07-05 | Novellus Systems, Inc. | Fabrication of semiconductor interconnect structure |
US8372757B2 (en) | 2003-10-20 | 2013-02-12 | Novellus Systems, Inc. | Wet etching methods for copper removal and planarization in semiconductor processing |
US8158532B2 (en) * | 2003-10-20 | 2012-04-17 | Novellus Systems, Inc. | Topography reduction and control by selective accelerator removal |
US8530359B2 (en) * | 2003-10-20 | 2013-09-10 | Novellus Systems, Inc. | Modulated metal removal using localized wet etching |
US7605082B1 (en) | 2005-10-13 | 2009-10-20 | Novellus Systems, Inc. | Capping before barrier-removal IC fabrication method |
US7976723B2 (en) * | 2007-05-17 | 2011-07-12 | International Business Machines Corporation | Method for kinetically controlled etching of copper |
CN102484061B (en) | 2009-09-02 | 2015-08-19 | 诺发系统有限公司 | The isotropic etchant material consumption reduced and waste material produce |
WO2011074589A1 (en) * | 2009-12-15 | 2011-06-23 | 三菱瓦斯化学株式会社 | Etchant and method for manufacturing semiconductor device using same |
JP2012231096A (en) * | 2011-04-27 | 2012-11-22 | Elpida Memory Inc | Semiconductor device and manufacturing method of the same |
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KR102002131B1 (en) | 2012-08-03 | 2019-07-22 | 삼성디스플레이 주식회사 | Etchant composition and manufacturing method for thin film transistor using the same |
US9053255B2 (en) | 2012-10-12 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method of generating masks for making integrated circuit |
WO2014064050A1 (en) | 2012-10-25 | 2014-05-01 | Basf Se | Treatment of preforms containing copper with a mixture containing chlorine-free and carboxyl-free acids and oxidants |
US8962403B2 (en) * | 2012-11-19 | 2015-02-24 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Manufacturing method for switch and array substrate using etching solution comprising amine |
KR101980668B1 (en) | 2012-11-21 | 2019-05-22 | 삼성전자주식회사 | Etching composition and method of manufacturing semiconductor devices using the same |
US20140138353A1 (en) * | 2012-11-21 | 2014-05-22 | Dynaloy, Llc | Process for performing metal lift-off |
CN103025070B (en) * | 2012-11-28 | 2015-07-01 | 深圳崇达多层线路板有限公司 | Outer line etching method of PCB (Printed Circuit Board) board with PTH (Plated Through Hole) inter-hole clamping line |
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US20150267306A1 (en) | 2015-09-24 |
KR101227830B1 (en) | 2013-01-30 |
KR101622562B1 (en) | 2016-05-19 |
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TW201546329A (en) | 2015-12-16 |
US8372757B2 (en) | 2013-02-12 |
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TWI505404B (en) | 2015-10-21 |
CN102473628A (en) | 2012-05-23 |
US20100015805A1 (en) | 2010-01-21 |
WO2011017119A2 (en) | 2011-02-10 |
US20130207030A1 (en) | 2013-08-15 |
CN104658904A (en) | 2015-05-27 |
KR20120024844A (en) | 2012-03-14 |
KR20110028446A (en) | 2011-03-18 |
TW201117322A (en) | 2011-05-16 |
US9074286B2 (en) | 2015-07-07 |
CN104658904B (en) | 2018-04-03 |
CN102473628B (en) | 2015-03-25 |
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