WO2011037829A3 - Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch - Google Patents

Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch Download PDF

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Publication number
WO2011037829A3
WO2011037829A3 PCT/US2010/049239 US2010049239W WO2011037829A3 WO 2011037829 A3 WO2011037829 A3 WO 2011037829A3 US 2010049239 W US2010049239 W US 2010049239W WO 2011037829 A3 WO2011037829 A3 WO 2011037829A3
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WO
WIPO (PCT)
Prior art keywords
source
metal
tfts
active channel
methods
Prior art date
Application number
PCT/US2010/049239
Other languages
French (fr)
Other versions
WO2011037829A2 (en
Inventor
Yan Ye
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to CN201080053900.2A priority Critical patent/CN102640294B/en
Priority to KR1020127010585A priority patent/KR101733718B1/en
Priority to JP2012530945A priority patent/JP5889791B2/en
Publication of WO2011037829A2 publication Critical patent/WO2011037829A2/en
Publication of WO2011037829A3 publication Critical patent/WO2011037829A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device

Abstract

The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.
PCT/US2010/049239 2009-09-24 2010-09-17 Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch WO2011037829A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201080053900.2A CN102640294B (en) 2009-09-24 2010-09-17 Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
KR1020127010585A KR101733718B1 (en) 2009-09-24 2010-09-17 Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
JP2012530945A JP5889791B2 (en) 2009-09-24 2010-09-17 Method of manufacturing metal oxide or metal oxynitride TFT using wet process for source / drain metal etching

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24546309P 2009-09-24 2009-09-24
US61/245,463 2009-09-24

Publications (2)

Publication Number Publication Date
WO2011037829A2 WO2011037829A2 (en) 2011-03-31
WO2011037829A3 true WO2011037829A3 (en) 2011-06-23

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PCT/US2010/049239 WO2011037829A2 (en) 2009-09-24 2010-09-17 Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch

Country Status (6)

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US (2) US7988470B2 (en)
JP (1) JP5889791B2 (en)
KR (1) KR101733718B1 (en)
CN (1) CN102640294B (en)
TW (1) TWI529810B (en)
WO (1) WO2011037829A2 (en)

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